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Technical Data: NPN Power Silicon Transistor

This document provides technical specifications for two NPN power silicon transistor models: the 2N6306 and 2N6308. It lists maximum ratings, electrical characteristics, and switching characteristics for both models. The 2N6306 and 2N6308 are qualified per MIL-PRF-19500/498 and come in a TO-3 package. They have similar specifications but the 2N6308 has higher maximum voltage and current ratings.

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0% found this document useful (0 votes)
52 views2 pages

Technical Data: NPN Power Silicon Transistor

This document provides technical specifications for two NPN power silicon transistor models: the 2N6306 and 2N6308. It lists maximum ratings, electrical characteristics, and switching characteristics for both models. The 2N6306 and 2N6308 are qualified per MIL-PRF-19500/498 and come in a TO-3 package. They have similar specifications but the 2N6308 has higher maximum voltage and current ratings.

Uploaded by

HoThanhLoi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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TECHNICAL DATA

NPN POWER SILICON TRANSISTOR


Qualified per MIL-PRF-19500/498
Devices

Qualified Level

2N6306

JAN
JANTX
JANTXV

2N6308

MAXIMUM RATINGS
Ratings

Symbol

Units

VCEO
VCBO
VEBO
IC
IB

Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C

2N6306 2N6308
250
350
500
700
8.0
8.0
4.0
@ TC = +250C (1)
125
PT
@ TC = +1000C (1)
62.5
Operating & Storage Temperature Range
-65 to +200
Top, Tstg
1) Between TC = +250C and TC = +1750C, linear derating factor average = 0.833 W/0C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation

TO-3 (TO-204AA)*
*See Appendix A for Package
Outline

ELECTRICAL CHARACTERISTICS
Characteristics

Symbol

Min.

Max.

Unit

2N6306
2N6308

V(BR)CEO

250
350

2N6306
2N6308

ICEX

5.0
5.0

Adc

2N6306
2N6308

ICEO

50
50

Adc

IEBO

5.0

OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 mAdc
Collector-Emitter Cutoff Current
VCE = 500 Vdc; VBE = 1.5 Vdc
VCE = 700 Vdc; VBE = 1.5 Vdc
Collector-Emitter Cutoff Current
VCE = 250 Vdc
VCE = 350 Vdc
Emitter-Base Cutoff Current
VEB = 8 Vdc

6 Lake Street, Lawrence, MA 01841


1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

Vdc

Adc

120101
Page 1 of 2

2N6306, 2N6308 JAN SERIES

ELECTRICAL CHARACTERISTICS (cont)


Characteristics

Symbol

Min.

Max.

75
60

hFE

15
12
4
3
15
12

Unit

ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 3.0 Adc; VCE = 5.0 Vdc
IC = 8.0 Adc; VCE = 5.0 Vdc
IC = 0.5 Adc; VCE = 5.0 Vdc
Base-Emitter Voltage
VCE = 5.0 Vdc; IC = 3.0 Adc
Base-Emitter Saturated Voltage
IB = 2.0 Adc; IC = 8.0 Adc
IB = 2.67 Adc; IC = 8.0 Adc
Collector-Emitter Saturated Voltage
IB = 2.0 Adc; IC = 8.0 Adc
IB = 2.67 Adc; IC = 8.0 Adc
IB = 0.6 Adc; IC = 3.0 Adc

2N6306
2N6308
2N6306
2N6308
2N6306
2N6308
2N6306
2N6308

VBE(on)

1.3
1.5

Vdc

2N6306
2N6308

VBE(sat)

2.3
2.5

Vdc

2N6306
2N6308
2N6306
2N6308

5.0
5.0
0.8
1.5

VCE(sat)

Vdc

DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.3 Adc, VCE = 10 Vdc, f = 1 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 4.0 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz

hfe
5
hfe
Cobo

30

5
250

pF

SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 125 Vdc; IC = 3.0 Adc; IB = 0.6 Adc
Turn-Off Time
VCC = 125 Vdc; IC = 3.0 Adc; IB1 = 0.6 Adc; IB2 = 1.5 Adc

on

off

0.6

3.0

SAFE OPERATING AREA


DC Tests
TC = +250C; t = 1 s, 1 cycle (See Figure 2 and 3 of MIL-PRF-19500/498)
Test 1
VCE = 15.6 Vdc, IC = 8 Adc
Test 2
VCE = 37 Vdc, IC = 3.4 Adc
Test 3
VCE = 200 Vdc, IC = 65 mAdc
2N6306
VCE = 300 Vdc, IC = 25 mAdc
2N6308
2.) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%.

6 Lake Street, Lawrence, MA 01841


1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101
Page 2 of 2

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