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V N. Bhoraskar

This document summarizes research on the effects of electron and heavy ion irradiation on silicon diodes and MOSFETs. Key findings include: 1) Irradiation of silicon diodes with 6 MeV electrons or swift heavy ions resulted in a continuous decrease in turn-off time and increase in forward voltage drop with increasing fluence. 2) The trade-off between turn-off time and forward voltage drop varied depending on the location of the radiation-induced defect zone relative to the diode junction. 3) By positioning diodes precisely in the electron beam using a slit system, turn-off time could be reduced from 1000 ns to around 200 ns without a large increase in forward voltage drop. Similar results were

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Gomatesh M. Ravanavar
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60 views1 page

V N. Bhoraskar

This document summarizes research on the effects of electron and heavy ion irradiation on silicon diodes and MOSFETs. Key findings include: 1) Irradiation of silicon diodes with 6 MeV electrons or swift heavy ions resulted in a continuous decrease in turn-off time and increase in forward voltage drop with increasing fluence. 2) The trade-off between turn-off time and forward voltage drop varied depending on the location of the radiation-induced defect zone relative to the diode junction. 3) By positioning diodes precisely in the electron beam using a slit system, turn-off time could be reduced from 1000 ns to around 200 ns without a large increase in forward voltage drop. Similar results were

Uploaded by

Gomatesh M. Ravanavar
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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NCEMEP-2010

Irradiation Effects of energetic electrons and heavy ions on silicon


diodes and MOSFETS
V. N. Bhoraskar
Emeritus Scientist-C.S.I.R.
Department of Physics, University of Pune, Pune-411007

Silicon diodes were exposed to (i) 6 MeV electrons obtained from the Race-Track Microtron of the University of
Pune, and (ii)swift-heavy ions at the pelletron facility of IUAC, NewDelhi. The significant effects observed
were continues (a) decrease in the turn-off time and (ii) increase in the forward voltage drop with electron or ion
fluence.The trade-off between the turn-of time and the forward voltage drop in the irradiated diodes was
found to vary with the location of the defect-zone produced by electrons or ions relative to the diode junction. By
using a slit system and proper positioning of the diode in the electron beam, the turn off time of the
diodes could be reduced from 1000 ns to around 200 ns ,without much increase in the forward voltage drop.
Similar results were also obtained with heavy ions. The results suggest that the location of the radiation
induced defect-zone relative to the junction position plays an important role in tailoring the switching
characteristics of irradiated silicon diodes. The irradiation effects of energetic electrons and ions on a few
n-type and p-type MOSFETS will be discussed, with emphasis on the contributions of the oxide charges and
interface states in changing the I-V characteristics of the irradiated MOSFETS.

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