Preliminary Technical Information

IXTY08N100D2
IXTA08N100D2
IXTP08N100D2

Depletion Mode
MOSFET

VDSX
ID(on)
RDS(on)

N-Channel

=
>

1000V
800mA
21

TO-252 (IXTY)

G
S

D (Tab)

Symbol

Test Conditions

VDSX

TJ = 25C to 150C

VGSX

Maximum Ratings
1000

Continuous

20

VGSM

Transient

30

PD

TC = 25C

60

- 55 ... +150
150
- 55 ... +150

C
C
C

300
260

C
C

1.13 / 10

Nm/lb.in.

0.35
2.50
3.00

g
g
g

TJ
TJM
Tstg
TL
TSOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

Md

Mounting Torque (TO-220)

Weight

TO-252
TO-263
TO-220

TO-263 AA (IXTA)

G
S
D (Tab)

TO-220AB (IXTP)

DS

G = Gate
S = Source

D (Tab)

D
= Drain
Tab = Drain

Features

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)

Characteristic Values
Min.
Typ.
Max.

BVDSX

VGS = - 5V, ID = 25A

1000

VGS(off)

VDS = 25V, ID = 25A

- 2.0

IGSX

VGS = 20V, VDS = 0V

IDSX(off)

VDS = VDSX, VGS= - 5V

RDS(on)

VGS = 0V, ID = 400mA, Note 1

ID(on)

VGS = 0V, VDS = 50V, Note 1

- 4.0

Advantages

Easy to Mount
Space Savings
High Power Density

50 nA
1 A
15 A

TJ = 125C

2009 IXYS CORPORATION, All Rights Reserved

21
800

Normally ON Mode
International Standard Packages
Molding Epoxies Meet UL 94 V-0
Flammability Classification

mA

Applications

Audio Amplifiers
Start-up Circuits
Protection Circuits
Ramp Generators
Current Regulators
Active Loads

DS100182A(12/09)

IXTY08N100D2
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)

Characteristic Values
Min.
Typ.
Max.

gfs

330

VDS = 30V, ID = 400mA, Note 1

Ciss
Crss
td(on)

mS

325

pF

24

pF

6.5

pF

28

ns

57

ns

34

ns

48

ns

14.6

nC

1.2

nC

8.3
0.50

Resistive Switching Times

tr

VGS = 5V, VDS = 500V, ID = 400mA

td(off)

RG = 10 (External)

tf
Qg(on)
Qgs

VGS = 5V, VDS = 500V, ID = 400mA

Qgd
RthJC
RthCS

TO-220

TO-252 AA (IXTY) Outline

560

VGS = -10V, VDS = 25V, f = 1MHz

Coss

Millimeter
Min. Max.

Inches
Min.
Max.

nC

A
A1

2.19
0.89

2.38
1.14

0.086
0.035

0.094
0.045

2.08 C/W
C/W

A2
b

0
0.64

0.13
0.89

0
0.025

0.005
0.035

b1
b2

0.76
5.21

1.14
5.46

0.030
0.205

0.045
0.215

c
c1

0.46
0.46

0.58
0.58

0.018
0.018

0.023
0.023

D
D1

5.97
4.32

6.22
5.21

0.235
0.170

0.245
0.205

E
E1

6.35
4.32

6.73
5.21

0.250
0.170

0.265
0.205

Characteristic Values
Min.
Typ.
Max.

Test Conditions

SOA

VDS = 800V, ID = 45mA, TC = 75C, Tp = 5s

Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)

36

Characteristic Values
Min.
Typ.
Max.

VSD

IF = 800mA, VGS = -10V, Note 1

trr
IRM
QRM

IF = 800mA, -di/dt = 100A/s

VR = 100V, VGS = -10V

0.8

1. Gate
2. Drain
3. Source

Dim.

Safe-Operating-Area Specification
Symbol

IXTA08N100D2
IXTP08N100D2

1.3

1.03
7.40
3.80

e
e1

2.28 BSC
4.57 BSC

H
L

9.40 10.42
0.51 1.02

0.370
0.020

0.410
0.040

L1
L2
L3

0.64
0.89
2.54

0.025
0.035
0.100

0.040
0.050
0.115

1.02
1.27
2.92

0.090 BSC
0.180 BSC

TO-220 (IXTP) Outline

s
A
C

Note 1. Pulse test, t 300s, duty cycle, d 2%.

TO-263 (IXTA) Outline

1.
2.
3.
4.

Gate
Drain
Source
Drain
Bottom Side

Dim.

Millimeter
Min.
Max.

Inches
Min. Max.

A
b
b2

4.06
0.51
1.14

4.83
0.99
1.40

.160
.020
.045

.190
.039
.055

c
c2

0.40
1.14

0.74
1.40

.016
.045

.029
.055

D
D1

8.64
8.00

9.65
8.89

.340
.280

.380
.320

9.65

10.41

.380

.405

E1
e
L
L1
L2
L3
L4

6.22
2.54
14.61
2.29
1.02
1.27
0

8.13
BSC
15.88
2.79
1.40
1.78
0.13

.270
.100
.575
.090
.040
.050
0

.320
BSC
.625
.110
.055
.070
.005

Pins:

1 - Gate
3 - Source

2 - Drain
4 - Drain

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106

4,931,844
5,017,508
5,034,796

5,049,961
5,063,307
5,187,117

5,237,481
5,381,025
5,486,715

6,162,665
6,259,123 B1
6,306,728 B1

6,404,065 B1
6,534,343
6,583,505

6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

7,157,338B2

IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
Fig. 1. Output Characteristics @ T J = 25C
0.8

Fig. 2. Extended Output Characteristics @ T J = 25C

2.2

VGS = 5V
2V
1V

0.7

1.8

0.6

1.6
0V

0.5

ID - Amperes

ID - Amperes

VGS = 5V
2V
1V

2.0

0.4
-1V
0.3

1.4
1.2

0V

1.0
0.8
-1V

0.6

0.2

0.4

-2V

0.1

-2V

0.2

0.0

0.0
0

10

12

14

10

20

30

Fig. 3. Output Characteristics @ T J = 125C

60

70

80

1E-01

VGS = 5V
1V

VGS = - 3.00V

1E-02

- 3.25V

0V

0.6
0.5

-1V

ID - Amperes

ID - Amperes

50

Fig. 4. Drain Current @ T J = 25C

0.8
0.7

40

VDS - Volts

VDS - Volts

0.4
0.3
0.2

1E-03

- 3.50V

1E-04

- 3.75V

1E-05

- 4.00V

1E-06

- 4.25V

1E-07

- 4.50V

-2V

0.1
-3V
0.0

1E-08

10

15

20

25

30

100

200

300

400

VDS - Volts

500

600

700

800

900

1000 1100 1200

VDS - Volts

Fig. 6. Dynamic Resistance vs. Gate Voltage

Fig. 5. Drain Current @ T J = 100C

1.E+11

1.E-01

VDS = 700V - 100V

1.E+10

VGS = -3.25V

1.E-02

-3.50V
-3.75V
-4.00V

1.E-04

R O - Ohms

ID - Amperes

1.E+09
1.E-03

1.E+08

TJ = 25C
1.E+07

-4.25V
1.E-05

-4.50V
1.E-06

TJ = 100C
1.E+06

1.E+05

100

200

300

400

500

600

700

800

VDS - Volts

2009 IXYS CORPORATION, All Rights Reserved

900

1000 1100 1200

-4.6

-4.4

-4.2

-4.0

-3.8

-3.6

VGS - Volts

-3.4

-3.2

-3.0

-2.8

IXTY08N100D2

Fig. 8. RDS(on) Normalized to ID = 0.4A Value

vs. Drain Current

Fig. 7. Normalized RDS(on) vs. Junction Temperature

2.6

2.6
VGS = 0V

2.2

VGS = 0V

2.4

5V - - - -

I D = 0.4A

2.2

R DS(on) - Normalized

R DS(on) - Normalized

IXTA08N100D2
IXTP08N100D2

1.8

1.4

1.0

2.0
TJ = 125C

1.8
1.6
1.4
1.2
1.0

0.6

0.8
0.2

TJ = 25C

0.6
-50

-25

25

50

75

100

125

150

0.0

0.2

0.4

0.6

TJ - Degrees Centigrade

0.8

1.0

1.2

1.4

1.6

ID - Amperes

Fig. 10. Transconductance

Fig. 9. Input Admittance

1.4

1.2
VDS = 30V

VDS = 30V
1.2

1.0

TJ = - 40C

0.8

25C

g f s - Siemens

ID - Amperes

1.0
0.8
TJ = 125C
25C
- 40C

0.6
0.4

0.4

0.2

0.2
0.0
-4.0

125C

0.6

0.0
-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

0.0

0.5

0.0

0.2

0.4

VGS - Volts

Fig. 11. Breakdown and Threshold Voltages

vs. Junction Temperature

0.8

1.0

1.2

1.4

Fig. 12. Forward Voltage Drop of Intrinsic Diode

2.8

1.3

VGS = -10V

2.4
1.2

VGS(off) @ VDS = 25V

2.0

IS - Amperes

BV / VGS(off) - Normalized

0.6

ID - Amperes

1.1
BVDSX @ VGS = - 5V
1.0

1.6
1.2
TJ = 125C

TJ = 25C

0.8
0.9
0.4
0.0

0.8
-50

-25

25

50

75

100

125

150

TJ - Degrees Centigrade

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

0.4

0.5

0.6

VSD - Volts

0.7

0.8

0.9

IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
Fig. 13. Capacitance

Fig. 14. Gate Charge

5

1,000

Capacitance - PicoFarads

Ciss

VDS = 500V

I G = 1mA

I D = 400mA

VGS - Volts

100

Coss

10

1
0
-1
-2
-3

Crss

-4

f = 1 MHz

-5

1
0

10

15

20

25

30

35

40

VDS - Volts

10

12

14

16

QG - NanoCoulombs

Fig. 15. Forward-Bias Safe Operating Area

Fig. 16. Forward-Bias Safe Operating Area

@ T C = 25C

@ T C = 75C
10.00

10.00

RDS(on) Limit

RDS(on) Limit
25s
100s

1ms
10ms
100ms

0.10

1.00

ID - Amperes

1.00

ID - Amperes

25s
100s

1ms
0.10
10ms

DC

TJ = 150C

100ms

TJ = 150C

TC = 25C
Single Pulse

DC

TC = 75C
Single Pulse

0.01

0.01
10

100

1,000

10

100

VDS - Volts

1,000

VDS - Volts

Fig. 17. Maximum Transient Thermal Impedance

Z (th)JC - C / W

10.0

1.0

0.1
0.0001

0.001

0.01

0.1

10

Pulse Width - Seconds

2009 IXYS CORPORATION, All Rights Reserved

IXYS REF: T_08N100D2(1C)8-25-09