JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-92 Plastic-Encapsulate Transistors
8050SS
TRANSISTORNPN TO 92
FEATURES Power dissipation PCM : Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J T stg: -55to +150 ELECTRICAL CHARACTERISTICS Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE 1 DC current gain hFE 2 Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE= 1 V , IC=800 mA IC= 800 mA, IB= 80 mA IC= 800mA, IB= 80 mA VCE= 10 V, I = 50mA C Transition frequency 40 0.5 1.2 V V
Tamb=25
1.EMITTER
2. COLLECTOR
3. BASE
1 2 3
unless
Test
otherwise
MIN 40 25 5
specified
TYP MAX UNIT V V V 0.1 0.1 0.1 A A A
conditions
Ic= 100 IE=0 A IC= 0.1 mA , IB=0
IE= 100 A IC=0 VCB= 40 VCE= 20 VEB= 5 V, V, V, IE=0 IB=0 IC=0
VCE= 1 V , IC= 100 mA
85
300
100 f =30 MHz
MHz
CLASSIFICATION OF h FE(1)
Rank Range B 85-160 C 120-200 D 160-300
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
A1
e e1
Symbol A A1 b c D D1 E e e1 L
Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min
Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169
