WW .100Y.C M.TW WW .100Y.C M.

TW
W WW 00Y.CO .TW W WW 00Y.CO .TW
W
.CO M. T
.TW
W W .1 2SK1940-01
Y . C OM
W W W W.1 Y.COM W N-channel MOS-FET
.100 .T
00Y
W.1 Y.COM W
W
W .100 FAP-IIA O M.T Series W W .C OM 600V 0,75Ω 12A 125W
W W 0 Y .C T W W 0 0 Y .T W
0 0 M. T .1 0 M . . 1 M
W.1 Y.C > OFeatures
W WW 00Y.CO .TW W WW 00Y.CO> Outline .TW Drawing
00 .T W . 1 M . 1 M
. 1 M
O Speed Switching WW O W O
WW 00Y-.CHigh .T W W 0 0Y.C M.TW WW .100Y.C M.TW
. 1
. 1
WW 00-Y.C
- LowOM On-Resistance
W WW 00Y.CO .TW W WW 00Y.CO .TW
W .1
M.T Power
No Secondary Breakdown M
W.1 - YLow .C ODriving W W.1 Y.COM W WW 00Y.CO .TW
W W W 00 .T W
W 00
W.1 - High O M.T
Voltage W.1 Y.COM W W W.1 Y.COM W
.C W
W W
. 1-00VYGS = ± M 30V .TW Guarantee W
W . 100 O M .T W
W .100 O M.T
W O WW .100Y. C
WW -.10Avalanche 0Y.C MProof .TW WW .100Y.C M.TW M .TW
W O W O
W
WW >.1Applications .CO .TW WW .100Y.C M.TW WW .100Y.C M.TW
00Y
W W . C OM
W WW 00Y.CO .TW W WW 00Y.CO .TW
- SwitchingY Regulators W
W .100
-WUPS .CO
M.T W.1 Y.COM W W W.1 Y.COM W
W
W
W - DC-DC . 1 00Yconverters M .TW W
W . 100 O M .T W
W .100 O M.T
W .C O W .C WW .100Y .C W
WW - General
. 1 00YPurpose M .TW AmplifierW W.100Y OM.TW
Power W O M.T
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
WW > 0Equivalent O
>W W
Maximum . C O
Ratings and Characteristics WW 00Y.CO .TW W 0 Y.C Circuit
W
W- Absolute . 1
Y
00MaximumMRatings .T W
(T =25°C),
W
W . 1otherwise specified
O M W .1 O M.T
W O C unless
.C Rating WW .100Y. C
WW .100Y.C M.TW
Item WWSymbol 1 00Y M .TW Unit M .TW
. O W O
WW 00Y.CO .TW WW VW 0Y.C M.600 TW V WW 00Y
.C W
M.T
Drain-Source-Voltage DS
W . 1 M . 1 0 W . 1 O
V W O 600 V C
WW .100Y.
Drain-Gate-Voltage
W (R =20KΩ)
O .C
WW .TW
DGR
0Y.C M.TW
GS
WW Drain
Continous 1 0Current ID . 1 00Y M .TW
12 A W O M
. W O
PulsedW WWCurrent
Drain 0 Y.C
O
.T W WI WD(puls)
0 0Y.C M 48.TW A WW .100Y.C M.TW
0 .1
Gate-Source-Voltage
W W. 1
.C OM
W
V GSWW
Y.CO±30 .TW V W WW 00Y.CO .TW
Y W 0
Max. Power W Dissipation
W .100 OM
.T PD W.1 Y.CO
0 125M W
W W.1 Y.COM W
.C W W
OperatingW W
. 1 0 Y
and Storage 0Temperature
M .T W
Range W
T ch
W . 100 150 .T °C
O M
W
W .100 O M.T
W O T stg W C
~ .+150 WW .100Y .C W
WW .100Y.C M.TW
-55 Y °C
W . 100 M .TW W O M.T
W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
- Electrical CharacteristicsW W .C
(T O
C=25°C),W unless otherwise WW 00Y.CO .TW
specified W WW 00Y.CO .TW
Y W
Item
W 00 .T
W.1 Y.COM W Symbol WW. Test0Yconditions
1
.CO .TW
M Min. WTyp. W.1 Max. OM
Y.C Unit.TW
W W W 0 0
W
Drain-Source Breakdown-Voltage .100 M.T V (BR)DSS ID=1mA W.1
0
OM
VGS=0V 600 W.1 Y.COMV W
Gate Threshhold W WW 00Y.CO .TWV GS(th) WIDW
Voltage =1mA 00Y.VC
1 V
DS= GS .T W 2,5 W W 3,0 100 3,5
. V .T
M
. 1 M W . O M W C O
Zero Gate Voltage Drain W
W Current .CO
Y W
I DSS
W
VDSW =600V
0
Tch
Y .C=25°C .TW W W10 0500 0 Y. µA .TW
W 00 .T VGS=0VW.10 Tch=125°C OM 0,2W.1 1,0 CmA M
W W.1 Y.COM W W Y .C W W W 0 Y. O .TW
VW
.100VDS=0VOM.T 0
WCurrent .100 GS=±30V
W.10,75 Y.CΩOM
Gate Source Leakage I GSS 10 100 nA
W O M.TR DS(on) W W .C W
Drain Source On-State Resistance
WW 0Y. C W I =6A V Y=10V W 0,55
W 100 S OM.T
W .1V00DS=25V OM.T
D GS
Forward Transconductance W.10 O M.T g fs ID=6A W .C 6 12WW.
Y.C
Input Capacitance WW .100Y.C MC.TissW WW VDS.=25V 1 00Y M .TW W 3800
2500 . 100 pF OM.
O C oss W .CO .TW W Y.C
Output Capacitance W
WW .100Y.C M . TW WW VGS=0V 00Y WW 330.100pF
220
M
W . 1 O M 50 WW pFY.CO
Reverse Transfer Capacitance W
W .C O C rss W f=1MHz
Y .C W W
75
0
00Y W W VCC=300V 00 .T 0
Turn-On-Time ton (ton=td(on)+t Wr)
W.1 Y.COtM
t d(on) .T W.1 Y.COM W 30
W
45W.1 ns Y.COM
W W W 00
W . 1 00 r
M .TW W ID=6A .100
W O M .T 60 90 .1ns
W
Turn-Off-Time toff (ton=td(off)+tf) W O
t d(off) VGS W=10V 00Y.C 140 W210 W ns
WW .100Y.C t f M.TW W
RGS=10W Ω.1 M .TW 80 120 ns
W O O
Avalanche Capability WW .100Y.CI AV M.TW L = 100µH WTch=25°C
W 0 0 Y.C .
12T W A
Continous Reverse Drain Current WW I.C O W W.1 Y.COM 12 A
00YI DRM M.TW W 00
DR
W .1 .1
Pulsed Reverse Drain Current W .CO .TIW WW 48 A
Diode Forward On-Voltage WW .100VYSD M F DR GS =2xI V W
=0V T ch =25°C 1,05 1,58 V
Reverse Recovery Time W W t rrY.CO W IF=IDR VGS=0V 450 ns
Reverse Recovery Charge
W
W .10Q0rr O M.T-dIF/dt=100A/µs Tch=25°C 3 µC
WW .100Y.C
W
WW
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R th(ch-a) channel to air 35 °C/W
R th(ch-c) channel to case 1,25 °C/W
 WW .100Y.C M.TW WW .100Y.C M.TW
W WW 00Y.CO .TW W WW 00Y.CO .TW
W
.C
M.
N-channel
O
T
TW
MOS-FET W W .1
Y .C OM
W 2SK1940-01W W W.1 Y.COM W
.100 .T
00Y
W.1 Y600V O M.0,75Ω
W
12A 125W W .100 O M.T
FAP-IIA Series W W .C OM
.C WW .100Y. C Y W
1 00 > Characteristics
M .TW M .TW W
W .100 O M.T
. W O .C
W .CO .TW WW .100Y.CDrain-Source-On-State .TW WW 100
Y .TW
. 1 00Y M
Typical Output Characteristics
W O M Resistance vs. TW. O MTypical Transfer Characteristics
WW 00Y.CO .TW WW .100Y.C M.TW WW .100Y.C M.TW
ch

. 1 M W O W O
WW 00Y.CO .TW WW .100Y.C M.TW WW .100Y.C M.TW
W.1 OM W O W O
WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW
W W↑ .C O 1 W WW ↑ 00Y.CO .T2W W WW ↑ 00Y.CO .T3W
Y W
W .100 M.T W .1 OM W.1 Y.COM W

RDS(ON) [Ω]
ID [A]

ID [A]
W C W .C W W
WW .100Y. M.T
W W .100
Y
M.T
W
W .100 OM
.T
W O W C O W .C W
WW .100Y.C M.TW WW .100Y. M .TW W .100
Y
M.T
W O W C O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y. M .TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W .V O
C [V] →
DS
W WW 00Y.TC[°C] O→ ch
W W WW 00Y.CO V [V] → W
.T GS

W 0 Y T W .T 1
W .1 0
O M . W . 1
C O M W W .
.C OM
W Y.C W vs. I WW . TWvs. I
0YTransconductance
. W Y Voltage.Tvs.WT
00Threshold
W . 1 0 0 M .T
Typical Drain-Source-On-State-Resistance D 1 0
Typical Forward
. M D
W . 1
Gate
OM ch
W C O W W .C O W Y .C W
WW .100Y . .TW Y W W .10 0 M.T
M
W
W . 100 O M .T W C O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y. M .TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
↑ W4
4
WW .100Y.C M.TW
O ↑
WW .100Y.C M.TW
5 ↑ WW .100Y.6C M.TW
O
RDS(ON) [Ω]

gfs [S]

VGS(th) [V]
W O W
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W . C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
W W 00 .T W
W
W .100 O M.T W.1 Y.COM W W W.1 Y.COM W
. C W
WWI [A] →.100Y M.T
W W
I [A]W→.1
00
O M.T
W
T W
.100
[°C] → OM
.T
W O C W .C
WW .100Y.C M.TW WW .100Y . Y .TW
D D ch

M .TW W
W . 100 O M
W O W
WCharge .CO .TWForward Characteristics WW of Reverse .C
00YDiode M.TW
WW vs..1V 00Y.C M.TW
Typical Capacitance DS TypicalW
Input
. 1 00Y M W . 1 O
W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
↑ ↑ W ↑ O↑ 9 WW O
7 W O 8
WW .100Y.C M.TW Y.C W
WW .100Y.C M.TW W . 1 0 0 M.T
C [nF]

VDS [V]

VGS [V]

IF [A]

O W O W .C O
W
WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y .T
W O W C O W W .C OM
WW .100Y . Y
WW .100Y.C M.TW M .TW W
W .100 OM.
W O W O W .C
WW .100Y.C M.TW WW .100Y.C M.TW W .100
Y
M
W W .C O W W Y .C O
W W W W
0 Y .CO
V [V] → W 00Y W
.T Q [nC] → W 00 .T V [V] → .10 M
DS
W.1 Y.COM W g

W W.1 Y.COM W SD
WW 00Y.CO
W W
W
W .100 O M.T
W
W .100 O M.T W W.1
C
. operation.T W Y.C W W
Allowable Power Dissipation vs. T
C
WW .100YSafe M
W
area
W .100 M.T
W O ↑ W W C O
WW .100Y.C M.TW Y. .TW
W . 100 O M
Zth(ch-c) [K/W]

W O W
WW .100Y.C M.TW WW .100Y.C
W O W Transient Thermal impedance
WW .100Y.C M.TW WW
↑ 10 ↑ W 12 O 11
WW .100Y.C M.TW
ID [A]
PD [W]

W O
WW .100Y.C
W
WW

Tc [°C] → VDS [V] → t [s] →

This specification is subject to change without notice!