GS66516B

Bottom-side cooled 650 V E-mode GaN transistor

Preliminary Datasheet

Features
• 650 V enhancement mode power switch
• Bottom-side cooled configuration
• RDS(on) = 25 mΩ
• IDS(max) = 60 A
• Ultra-low FOM Island Technology® die
• Low inductance GaNPX® package
• Easy gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 / +10 V)
Package Outline Circuit Symbol
• Very high switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse current capability
• Zero reverse recovery loss
• Small 11 x 9 mm2 PCB footprint
• Source Sense (SS) pads for optimized gate drive
• Dual gate and source sense pads for optimal board layout
• RoHS 6 compliant

Applications Description
• High efficiency power conversion The GS66516B is an enhancement mode gallium
• High density power conversion nitride (GaN) on silicon power transistor. The
• AC-DC Converters properties of GaN allow for high current, high
• Bridgeless Totem Pole PFC
voltage breakdown and high switching frequency.
• ZVS Phase Shifted Full Bridge
GaN Systems implements patented Island
• Half Bridge topologies
• Synchronous Buck or Boost Technology® cell layout for high-current die
• Uninterruptable Power Supplies performance & yield. GaNPX® packaging enables
• Industrial Motor Drives low inductance & low thermal resistance in a small
• Single and 3Φ inverter legs package. The GS66516B is a bottom-side cooled
• Solar and Wind Power
transistor that offers very low junction-to-case
• Fast Battery Charging
thermal resistance for demanding high power
• DC-DC converters
• On Board Battery Chargers applications. These features combine to provide
• Traction Drive very high efficiency power switching.

Rev 180213 © 2009-2018 GaN Systems Inc. 1

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 GS66516B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet

Absolute Maximum Ratings (Tcase = 25 °C except as noted)

Parameter Symbol Value Unit
Operating Junction Temperature TJ -55 to +150 °C
Storage Temperature Range TS -55 to +150 °C
Drain-to-Source Voltage VDS 650 V
Transient Drain-to-Source Voltage (note 1) VDS(transient) 750 V
Gate-to-Source Voltage VGS -10 to +7 V
Gate-to-Source Voltage - transient (note 1) VGS(transient) -20 to +10 V
Continuous Drain Current (Tcase=25 °C) (note 2) IDS 60 A
Continuous Drain Current (Tcase=100 °C) (note 2) IDS 47 A
(1) Pulse < 1 µs.
(2) Limited by saturation

Thermal Characteristics (Typical values unless otherwise noted)

Parameter Symbol Value Units
Thermal Resistance (junction-to-case) – bottom side RΘJC 0.27 °C /W
Thermal Resistance (junction-to-top) RΘJT 5.5 °C /W
Thermal Resistance (junction-to-ambient) (note 3) RΘJA 23 °C /W
Maximum Soldering Temperature (MSL3 rated) TSOLD 260 °C
(3) Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The
recommendation for thermal vias under the thermal pad are 0.3 mm diameter (12 mil) with 0.635
mm pitch (25 mil). The copper layers under the thermal pad and drain pad are 25 x 25 mm2 each. The
PCB is mounted in horizontal position without air stream cooling.

Ordering Information
Ordering Packing Reel Reel
Package type Qty
code method Diameter Width
GS66516B-TR GaNPX® Bottom-Side Cooled Tape-and-Reel 2000 13” (330mm) 24mm

GS66516B-MR GaNPX® Bottom-Side Cooled Mini-Reel 250 7” (180mm) 24mm

Rev 180213 © 2009-2018 GaN Systems Inc. 2

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 GS66516B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet

Electrical Characteristics (Typical values at TJ = 25 °C, VGS = 6 V unless otherwise noted)

Parameters Sym. Min. Typ. Max. Units Conditions
Drain-to-Source Blocking Voltage BVDS 650 V VGS = 0 V, IDSS = 100 µA
VGS = 6 V, TJ = 25 °C
Drain-to-Source On Resistance RDS(on) 25 32 mΩ
IDS = 18 A
VGS = 6 V, TJ = 150 °C
Drain-to-Source On Resistance RDS(on) 65 mΩ
IDS = 18 A
Gate-to-Source Threshold VGS(th) 1.1 1.3 V VDS = VGS, IDS = 14 mA

Gate-to-Source Current IGS 320 µA VGS = 6 V, VDS = 0 V

Gate Plateau Voltage Vplat 3.0 V VDS = 400 V, IDS = 60 A

VDS = 650 V, VGS = 0 V
Drain-to-Source Leakage Current IDSS 4 100 µA
TJ = 25 °C
VDS = 650 V, VGS = 0 V
Drain-to-Source Leakage Current IDSS 800 µA
TJ = 150 °C
Internal Gate Resistance RG 0.34 Ω f = 25MHz, open drain

Input Capacitance CISS 520 pF

VDS = 400 V, VGS = 0 V
Output Capacitance COSS 130 pF
f = 1 MHz
Reverse Transfer Capacitance CRSS 4 pF
Effective Output Capacitance
CO(ER) 177 pF
Energy Related (note 4)
VGS = 0 V, VDS = 0 to 400 V
Effective Output Capacitance
CO(TR) 284 pF
Time Related (note 5)
Total Gate Charge QG 12.1 nC

Gate-to-Source Charge QGS 4.4 nC VGS = 0 to 6 V, VDS = 400 V

Gate-to-Drain Charge QGD 3.4 nC

Output Charge QOSS 113 nC VGS = 0 V, VDS = 400 V

Reverse Recovery Charge QRR 0 nC

(4) CO(ER) is the fixed capacitance that would give the same stored energy as COSS while VDS is rising from 0 V to the stated VDS.
(5) CO(TR) is the fixed capacitance that would give the same charging time as COSS while VDS is rising from 0 V to the stated VDS

Rev 180213 © 2009-2018 GaN Systems Inc. 3

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 GS66516B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet

Electrical Characteristics cont’d (Typical values at TJ = 25 °C, VGS = 6 V unless otherwise noted)
Parameters Sym. Min. Typ. Max. Units Conditions
Turn-On Delay tD(on) 4.6 ns
VDD = 400 V
Rise Time tR 12.4 ns VGS = 0 - 6 V
Turn-Off Delay tD(off) 14.9 ns ID = 16 A, RG(ext) = 5 Ω
TJ = 25 °C (note 6)
Fall Time tF 22 ns
VDS = 400 V
Output Capacitance Stored Energy EOSS 14.1 µJ VGS = 0 V
f = 1 MHz
VDS = 400 V, IDS = 20 A
Switching Energy during turn-on Eon 134.1 µJ
VGS = 0-6 V, RG(on) = 10 Ω
RG(off) = 1 Ω
L = 120 µH
Switching Energy during turn-off Eoff 14.7 µJ
LP = 10 nH (notes 7, 8)

(6) See Figure 12 for timing test circuit diagram and definition waveforms.
(7) LP is the switching circuit parasitic inductance.
(8) See Figure 13 for switching test circuit.

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 GS66516B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet

Electrical Performance Graphs

GS66516B IDS vs. VDS Characteristic GS66516B IDS vs. VDS Characteristic

Figure 1: Typical IDS vs. VDS @ TJ = 25 ⁰C Figure 2: Typical IDS vs. VDS @ TJ = 150 ⁰C

RDS(on) vs. IDS Characteristic RDS(on) vs. IDS Characteristic

Figure 3: RDS(on) vs. IDS at TJ = 25 ⁰C Figure 4: RDS(on) vs. IDS at TJ = 150⁰C

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 GS66516B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet

Electrical Performance Graphs

GS66516B IDS vs. VDS, TJ dependence GS66516B Gate Charge, QG Characteristic

Figure 5: Typical IDS vs. VDS @ VGS = 6 V Figure 6: Typical VGS vs. QG @ VDS = 100, 400 V

GS66516B Capacitance Characteristics GS66516B Stored Energy Characteristic

Figure 7: Typical CISS, COSS, CRSS vs. VDS Figure 8: Typical COSS Stored Energy

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 GS66516B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet

Electrical Performance Graphs

GS66516B Reverse Conduction Characteristics GS66516B IDS vs. VGS Characteristic

Figure 9: Typical ISD vs. VSD Figure 10: Typical IDS vs. VGS

RDS(on) Temperature Dependence GS66516B IDS - VDS SOA

Figure 11: Normalized RDS(on) as a function of TJ Figure 12: Safe Operating Area @ Tcase = 25 °C

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 GS66516B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet

Electrical Performance Graphs

GS66516B Power Dissipation – Temperature GS66516B Transient RθJC
Derating

Figure 13: Derating vs. Case Temperature Figure 14: Transient Thermal Impedance

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 GS66516B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet

Test Circuits
VDS
VDD 90%
RL

VDS
D
VGS
RG DUT
G
10%
S VGS
tr tf
td(on) td(off)

Figure 15: GS66516B switching time test circuit and waveforms

1/2LP

VDD
D

L
G

VDS
RG(ON) D ID
VGS
RG(OFF) G DUT

S
1/2LP

Figure 16: GS66516B Switching Loss Test Circuit

Rev 180213 © 2009-2018 GaN Systems Inc. 9

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 GS66516B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet

Application Information
Gate Drive
The recommended gate drive voltage is 0 V to + 6 V for optimal RDS(on) performance and long life. The absolute
maximum gate to source voltage rating is specified to be +7.0 V maximum DC. The gate drive can survive
transients up to +10 V and – 20 V for pulses up to 1 µs. These specifications allow designers to easily use 6.0 V
or even 6.5 V gate drive settings. At 6 V gate drive voltage the enhancement mode high electron mobility
transistor (E-HEMT) is fully enhanced and reaches its optimal efficiency point. A 5 V gate drive can be used but
may result in lower operating efficiency. Inherently, GaN Systems E-HEMT do not require negative gate bias to
turn off. Negative gate bias ensures safe operation against the voltage spike on the gate, however it increases
the reverse conduction loss. For more details, please refer to the gate driver application note GN001, Application
Guide – Design with GaN Enhancement Mode HEMT” at www.gansystems.com

Similar to a silicon MOSFET, an external gate resistor can be used to control the switching speed and slew rate.
Adjusting the resistor to achieve the desired slew rate may be needed. Lower turn-off gate resistance, RG(OFF) is
recommended for better immunity to cross conduction. Please see the gate driver application note (GN001) for
more details.

A standard MOSFET driver can be used as long as it supports 6 V for gate drive and the UVLO is suitable for 6 V
operation. Gate drivers with low impedance and high peak current are recommended for fast switching speed.
GaN Systems E-HEMTs have significantly lower QG when compared to equally sized RDS(on) MOSFETs, so high
speed can be reached with smaller and lower cost gate drivers.

Some non-isolated half bridge MOSFET drivers are not compatible with 6 V gate drive due to their high under-
voltage lockout threshold. Also, a simple bootstrap method for high side gate drive may not be able to provide
tight enough tolerance on the gate voltage. Therefore, special care should be taken when you select and use
half bridge drivers. Please see the gate driver application note, (GN001), for more details.

Parallel Operation
Design wide tracks or polygons on the PCB to distribute the gate drive signals to multiple devices. Keep the
drive loop length to each device as short and equal length as possible.

GaN enhancement mode HEMTs have a positive temperature coefficient on-state resistance which helps to
balance the current. However, special care should be taken in the driver circuit and PCB layout since the device
switches at very high speed. It is recommended to have a symmetric PCB layout and equal gate drive loop
length (star connection if possible) on all parallel devices to ensure balanced dynamic current sharing. Adding a
small gate resistor (1-2 Ω) on each gate is strongly recommended to minimize the gate’s parasitic oscillation.

Rev 180213 © 2009-2018 GaN Systems Inc. 10

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 GS66516B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet

Source Sensing
The GS66516B has two dedicated source sense pads. The GaNPX® packaging utilizes no wire bonds so the source
connection is very low inductance. The dedicated source sense pin will further enhance performance by
eliminating the common source inductance if a dedicated gate drive signal kelvin connection is created. This
can be achieved by connecting the gate drive signal from the driver to the gate pad on the GS66516B and
returning from the source sense pad on the GS66516B to the driver ground reference.

Thermal
The substrate is internally connected to the source/thermal pad on the bottom-side of the GS66516B. The
transistor is designed to be cooled using the printed circuit board. The Drain pad is not as thermally conductive
as the thermal pad. However, adding more copper under the Drain pad will improve thermal performance by
reducing the package temperature.

Thermal Modeling
RC thermal models are available for customers that wish to perform detailed thermal simulation using SPICE.
The thermal models are created using the Cauer model, an RC network model that reflects the real physical
property and packaging structure of our devices. This approach allows our customers to extend the thermal
model to their system by adding extra Rθ and Cθ to simulate the Thermal Interface Material (TIM) or Heatsink.

GS66516B RC thermal model:

RC breakdown of RΘJC
Rθ (°C/W) Cθ (W∙s/°C)
Rθ1 = 0.008 Cθ1 = 1.48E-04
Rθ2 = 0.124 Cθ2 = 1.37E-03
Rθ3 = 0.130 Cθ3 = 12.0E-03
Rθ4 = 0.008 Cθ4 = 3.7E-03

For more detail, please refer to Application Note GN007 “Modeling Thermal Behavior of GaN Systems’ GaNPX™
Using RC Thermal SPICE Models” available at www.gansystems.com

Reverse Conduction
GaN Systems enhancement mode HEMTs do not have an intrinsic body diode and there is zero reverse recovery
charge. The devices are naturally capable of reverse conduction and exhibit different characteristics depending
on the gate voltage. Anti-parallel diodes are not required for GaN Systems transistors as is the case for IGBTs to
achieve reverse conduction performance.

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 GS66516B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet

On-state condition (VGS = +6 V): The reverse conduction characteristics of a GaN Systems enhancement mode
HEMT in the on-state is similar to that of a silicon MOSFET, with the I-V curve symmetrical about the origin and
exhibits a channel resistance, RDS(on), similar to forward conduction operation.
Off-state condition (VGS ≤ 0 V): The reverse characteristics in the off-state are different from silicon MOSFETs as
the GaN device has no body diode. In the reverse direction, the device starts to conduct when the gate voltage,
with respect to the drain, VGD, exceeds the gate threshold voltage. At this point the device exhibits a channel
resistance. This condition can be modeled as a “body diode” with slightly higher VF and no reverse recovery
charge.

If negative gate voltage is used in the off-state, the source-drain voltage must be higher than VGS(th)+VGS(off) in
order to turn the device on. Therefore, a negative gate voltage will add to the reverse voltage drop “VF” and
hence increase the reverse conduction loss.

Blocking Voltage
The blocking voltage rating, BVDS, is defined by the drain leakage current. The hard (unrecoverable) breakdown
voltage is approximately 30 % higher than the rated BVDS. As a general practice, the maximum drain voltage
should be de-rated in a similar manner as IGBTs or silicon MOSFETs. All GaN E-HEMTs do not avalanche and thus
do not have an avalanche breakdown rating. The maximum drain-to-source rating is 650 V and doesn’t change
with negative gate voltage. A transient drain-to-source voltage of 750 V for 1 µs is acceptable.

Packaging and Soldering

The package material is high temperature epoxy-based PCB material which is similar to FR4 but has a higher
temperature rating, thus allowing the GS66516B device to be specified to 150 °C. The device can handle at least
3 reflow cycles.
It is recommended to use the reflow profile in IPC/JEDEC J-STD-020 REV D.1 (March 2008)
The basic temperature profiles for Pb-free (Sn-Ag-Cu) assembly are:
• Preheat/Soak: 60 - 120 seconds. Tmin = 150 °C, Tmax = 200 °C.
• Reflow: Ramp up rate 3 °C/sec, max. Peak temperature is 260 °C and time within 5 °C of peak
temperature is 30 seconds.
• Cool down: Ramp down rate 6 °C/sec max.
Using “Non-Clean” soldering paste and operating at high temperatures may cause a reactivation of the “Non-
Clean” flux residues. In extreme conditions, unwanted conduction paths may be created. Therefore, when the
product operates at greater than 100 °C it is recommended to also clean the “Non-Clean” paste residues.

Rev 180213 © 2009-2018 GaN Systems Inc. 12

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 GS66516B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet

Recommended Minimum Footprint for Printed Circuit Board

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 GS66516B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet

Package Dimensions

Surface Finish: ENIG

Ni: 4.5 µm +/- 1.5 µm
Au: 0.09 µm +/- 0.03 µm

GaNPX® Part Marking

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 GS66516B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet

GS660516B GaNPX® Tape and Reel Information

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 GS66516B
Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet

Tape and Reel Box Dimensions

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Important Notice – Unless expressly approved in writing by an authorized representative of GaN Systems, GaN
Systems components are not designed, authorized or warranted for use in lifesaving, life sustaining, military, aircraft,
or space applications, nor in products or systems where failure or malfunction may result in personal injury, death, or
property or environmental damage. The information given in this document shall not in any event be regarded as a
guarantee of performance. GaN Systems hereby disclaims any or all warranties and liabilities of any kind, including
but not limited to warranties of non-infringement of intellectual property rights. All other brand and product names
are trademarks or registered trademarks of their respective owners. Information provided herein is intended as a
guide only and is subject to change without notice. The information contained herein or any use of such information
does not grant, explicitly, or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights. GaN Systems standard terms and conditions apply. All rights reserved.

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