SEMICONDUCTOR KF13N60N

N CHANNEL MOS FIELD

TECHNICAL DATA EFFECT TRANSISTOR

General Description

A
This planar stripe MOSFET has better characteristics, such as fast N Q B
O K
switching time, low on resistance, low gate charge and excellent
DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for switching mode _ 0.20

F
A 15.60 +
B _ 0.20
4.80 +
power supplies. C _ 0.20
19.90 +

C
J
R
D _ 0.20
2.00 +

I
H
d _ 0.20
1.00 +
E _ 0.20
3.00 +
F 3.80 +_ 0.20
FEATURES

G
G 3.50 +_ 0.20
D H _ 0.20
13.90 +
VDSS(Min.)= 600V, ID= 13A E _ 0.20
I 12.76 +
Drain-Source ON Resistance : J _ 0.20
23.40 +

L
d M K 1.5+0.15-0.05
RDS(ON)=0.56(Max.) @VGS =10V L 16.50 +_ 0.30
M _ 0.20
1.40 +
Qg(typ.) =36nC N 13.60 +_ 0.20
P P T
O _ 0.20
9.60 +
P _ 0.30
5.45 +
Q 3.20 +_ 0.10
1 2 3 _ 0.20
R 18.70 +
MAXIMUM RATING (Tc=25 ) T 0.60+0.15-0.05
1. Gate
CHARACTERISTIC SYMBOL RATING UNIT 2. Drain
3. Source
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V TO-3P(N)-E
@TC=25 ID 13
Drain Current A
Pulsed (Note1) IDP 32
Single Pulsed Avalanche Energy (Note 2) EAS 870 mJ
Repetitive Avalanche Energy (Note 1) EAR 22.5 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns

Drain Power Tc=25 215 W

PD
Dissipation Derate above25 1.72 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 0.58 /W
Thermal Resistance, Junction-to-Ambient RthJA 40 /W

Marking

1 KF13N60
N 801 2

S
1 PRODUCT NAME
2 LOT NO

2008. 10. 2 Revision No : 1 1/6

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 KF13N60N

ELECTRICAL CHARACTERISTICS (Tc=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.63 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=6.5A - 0.47 0.56
Dynamic
Total Gate Charge Qg - 36 -
VDS=480V, ID=13A
Gate-Source Charge Qgs - 8.5 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 13.5 -
Turn-on Delay time td(on) - 30 -
VDD=300V,
Turn-on Rise time tr RG=25 , - 40 -
ns
Turn-off Delay time td(off) ID=13A - 115 -
tf (Note4,5)
Turn-off Fall time - 55 -
Input Capacitance Ciss - 1445 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 185 - pF
Reverse Transfer Capacitance Crss - 20 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 13
VGS<Vth A
Pulsed Source Current ISP - - 52
Diode Forward Voltage VSD IS=13A, VGS=0V - 0.9 1.4 V
Reverse Recovery Time trr IS=13A, VGS=0V, - 370 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 4.6 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 9.3mH, IAS=13A, VDD=50V, RG = 25 , Starting Tj = 25
Note 3) IS 13A, dI/dt 200A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.

2008. 10. 2 Revision No : 1 2/6

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 KF13N60N

Fig1. ID - VDS Fig2. ID - VGS

100
VDS=20V
VGS=10V 1
10
Drain Current ID (A)

Drain Current ID (A)

VGS=6V
10

VGS=5V
0 100 C 25 C
10
1

-1
0.1 10
0.1 1 10 100 2 4 6 8 10

Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)

Fig3. BVDSS - Tj Fig4. RDS(ON) - ID

Normalized Breakdown Voltage BVDSS

1.2 1.2
VGS = 0V
On - Resistance RDS(ON) (Ω)

IDS = 250

1.1
1.0

1.0
VGS=6V
0.6
0.9 VGS=10V

0.8 0.2
-100 -50 0 50 100 150 0 5 10 15 20

Junction Temperature Tj ( C ) Drain Current ID (A)

Fig5. IS - VSD Fig6. RDS(ON) - Tj

2
10 3.0
VGS =10V
Reverse Drain Current IS (A)

IDS = 6A
2.5
Normalized On Resistance

100 C 25 C
1 2.0
10

1.5

0 1.0
10

0.5

10
-1 0.0
0.4 0.6 0.8 1.0 1.2 1.4 1.8 -100 -50 0 50 100 150

Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)

2008. 10. 2 Revision No : 1 3/6

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 KF13N60N

Fig 7. C - VDS Fig8. Qg- VGS

104 12
ID=13A

Gate - Source Voltage VGS (V)

VDS = 480V
10
VDS = 300V
Ciss
Capacitance (pF)

8 VDS = 120V
103

6
Coss
102 4

2
Crss
101 0
0 10 20 30 40 0 5 10 15 20 25 30 35 40

Gate - Charge Qg (nC)

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area Fig10. ID - Tj

102 14
100µs
12
Drain Current ID (A)
Drain Current ID (A)

101 1ms 10

10ms 8
100ms
100
Operation in this 6
area is limited by RDS(ON) DC

4
10-1
Tc= 25 C
2
Tj = 150 C
Single pulse
102 0
100 101 102 103 25 50 75 100 125 150

Drain - Source Voltage VDS (V) Junction Temperature Tj ( C)

Fig11. Transient Thermal Response Curve

100
Transient Thermal Resistance

Duty=0.5

0.2
10-1 0.1

0.05 PDM
t1
0.02
0.01 t2
10-2
Single Pulse - Rth(j-c) = 0.58 C/W Max.
- Duty Factor, D= t1/t2

10-5 10-4 10-3 10-2 10-1 100 101

TIME (sec)

2008. 10. 2 Revision No : 1 4/6

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 KF13N60N

Fig12. Gate Charge

VGS

10 V
Fast
Recovery
ID Diode

0.8 VDSS
ID
1.0 mA
Q
VDS Qgs Qgd
Qg
VGS

Fig13. Single Pulsed Avalanche Energy

1 BVDSS
EAS= LIAS2
2 BVDSS - VDD

BVDSS
L
IAS
50V

25Ω
VDS ID(t)

VGS VDD VDS(t)

10 V

Time
tp
Fig14. Resistive Load Switching

VDS
90%

RL

0.5 VDSS
VGS 10%
td(off)
25 Ω td(on) tr
VDS tf

ton toff
VGS
10V

2008. 10. 2 Revision No : 1 5/6

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 KF13N60N

Fig15. Source - Drain Diode Reverse Recovery and dv /dt

DUT Body Diode Forword Current

VDS
ISD
IF (DUT) di/dt

IRM

IS
Body Diode Reverse Current

0.8 VDSS
VDS Body Diode Recovery dv/dt
(DUT)
driver VSD
VDD

10V VGS
Body Diode Forword Voltage drop

2008. 10. 2 Revision No : 1 6/6

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