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The document is an exam paper for an electronics course containing two parts - Part A with short answer questions and Part B with longer multi-part questions. It covers topics like diodes, rectifiers, transistors, FETs and asks students to define terms, derive equations, explain concepts, and solve problems related to these electronic devices and circuits.

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64 views2 pages

WWW - Manaresults.co - In: (Common To EEE, ECE, CSE, EIE, IT, MCT)

The document is an exam paper for an electronics course containing two parts - Part A with short answer questions and Part B with longer multi-part questions. It covers topics like diodes, rectifiers, transistors, FETs and asks students to define terms, derive equations, explain concepts, and solve problems related to these electronic devices and circuits.

Uploaded by

pramod
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Code No: 113AU R13

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD


B. Tech II Year I Semester Examinations, April/May - 2018
ELECTRONIC DEVICES AND CIRCUITS
(Common to EEE, ECE, CSE, EIE, IT, MCT)
Time: 3 Hours Max. Marks: 75

Note: This question paper contains two parts A and B.


Part A is compulsory which carries 25 marks. Answer all questions in Part A.
Part B consists of 5 Units. Answer any one full question from each unit.
Each question carries 10 marks and may have a, b, c as sub questions.

PART- A
(25 Marks)
1.a) Define static resistance. [2]
b) Write the effect of temperature on diode characteristics. [3]
c) What is regulation? [2]
d) List the differences between different filters. [3]
e) Define current amplification factor. [2]
f) What is emitter follower? Draw the circuit diagram of CC configuration. [3]
g) What is the need of biasing? [2]
h) Explain, how to avoid thermal runway? [3]
i) Mention the applications of FET. [2]
j) Why the input impedance of FET is higher than BJT? [3]

PART-B
(50 Marks)
2.a) Draw and explain V-I characteristics of PN diode.
b) With suitable expressions explain transition capacitance. [5+5]
OR
3.a) Describe the principle of operation of tunnel diode.
b) Explain the working of semiconductor photo diode. [5+5]

4.a) Derive the equation for ripple factor of half wave rectifier with C-filter.
b) With suitable wave forms explain bridge rectifier. [5+5]
OR
5.a) Describe the operation of full wave rectifier with π-section filter.
b) A 50 Hz transformer having 60 V r. m. s. on each side of the centre tap supplies a full
wave rectifier circuit. The circuit load is 210 Ω with a shunt capacitor filter of 1000 µF.
Find the ripple factor. [5+5]

6.a) Explain the working of PNP transistor.


b) Write the differences between CB, CE, and CC Amplifier Configurations. [5+5]
OR
7.a) Derive the relation between α and β.
b) Discuss, how the h-parameters are determined from transistor Characteristics. [4+6]

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8.a) Derive the equation for stability factor for fixed bias.
b) Draw and explain the circuit for bias compensation using diode. [5+5]
OR
9.a) Write a short note on Stabilization against variations in VBE and β.
b) For the transistor amplifier circuit, when signal changes by 0.012 V, the base current
changes by 9 µA and collector current by 1.3 mA. If the collector load RC = 6 KΩ,
RL = 12 KΩ. Determine input resistance, current gain and voltage gain. [5+5]

10.a) Write short notes on Small Signal Model of JFET.


b) Draw and explain drain and transfer characteristics of depletion type MOSFET. [5+5]
OR
11.a) With neat sketch, discuss about common source FET amplifier.
b) Explain, how FET is working as Voltage Variable Resistor? [6+4]

---ooOoo---

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