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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides product specifications for the SavantIC Semiconductor 2SD5072 silicon NPN power transistor. It includes maximum ratings, applications, pinning, characteristics, and package outline dimensions. The transistor is in a TO-3PML package and is suitable for color TV horizontal output applications due to its high speed, high breakdown voltage, and built-in damper diode characteristics.

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55 views

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides product specifications for the SavantIC Semiconductor 2SD5072 silicon NPN power transistor. It includes maximum ratings, applications, pinning, characteristics, and package outline dimensions. The transistor is in a TO-3PML package and is suitable for color TV horizontal output applications due to its high speed, high breakdown voltage, and built-in damper diode characteristics.

Uploaded by

jose_gomez_30
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD5072

DESCRIPTION
·With TO-3PML package
www.datasheet4u.com
·High speed
·High breakdown voltage
·Built-in damper diode

APPLICATIONS
·Color TV horizontal output application

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3PML) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 5 A

ICM Collector current-peak 16 A

PC Collector power dissipation TC=25 60 W

Tj Junction temperature 150

Tstg Storage temperature -50~150

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD5072

CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.8A 5.0 V

VBEsat Base-emitter saturation voltage IC=4 A;IB=0.8A 1.5 V

ICBO Collector cut-off current VCB=800V; IE=0 10 µA

IEBO Emitter cut-off current VEB=4V; IC=0 40 200 mA

hFE DC current gain IC=1A ; VCE=5V 8

fT Transition frequency IC=1A ; VCE=10V 3 MHz

VF Diode forward voltage IF=5A 2.0 V

IC=4A;RL=50=;VCC=200V
tf Fall time 0.4 µs
IB1=0.8A;IB2=-1.6A

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD5072

PACKAGE OUTLINE

www.datasheet4u.com

Fig.2 Outline dimensions

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