IN5240
Passive Filters Part 2:
LC Ladder Filters
Sumit Bagga* and Dag T. Wisland**
*Staff IC Design Engineer, Novelda AS
**CTO, Novelda AS
Institutt for Informatikk
Review Series & Parallel RLC
• Series à voltage magnification
&
– Voltage across inductor, !" = $%" = %" = (!
'
) " +, - )
– w/ ( = = =
' * . +, ./
• Parallel à current magnification
& 2'
– Current through inductor, $" = = = ($
01 01
* '
– w/ ( = 3 = = 45 RC
" +, -
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Laplace Transform
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Direct-RF Receiver Front-End
LNA ADC
HPF
Receiver comprises high-pass filter (HPF) for
interference rejection, impedance and noise-
matched low-noise amplifier (LNA), and high-speed
analog-to-digital converter (ADC)
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Filter Design Steps
• Choose filter type and order
• Realize a normalized lowpass prototype (LPP) filter
• Frequency transformation from LPP (to highpass,
bandpass, bandstop)
• Impedance and frequency scaling
• Impedance transformation
– "# ≠ "%
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Specifications
• Insertion loss, bandwidth, passband-to-stopband transition
and attenuation, group delay, termination/matching,
overshoot and ringing in the impulse/step response
• Single-ended, single-ended to differential, DE to DE or
DE to pseudo-DE
• RF design à high-Q reactive components à low-
insertion loss, e.g., inductors, capacitors, varactors
– Metal conductivity of Cu (5.8x107 S/m), distance to
substrate and substrate resistivity (e.g., 10 Ω-cm)
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Comparison Table of the Classics
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
PLR
• Filter response is defined by the Power Loss Ratio
&',) +
(PLR) and is !"# $ = & = +,|.(0)|2, where Γ($)
*
is the input reflection coefficient and is 1/|6+7 |7 ,
assuming that the input and output are matched
• Let |Γ($)|7 be an even order 8(9), then !"# $ =
;(02 )
1 + <(02) , where = and A are real polynomials of the
order 2
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Butterworth or
Maximally Flat Magnitude Filter
• All pole filter (!/# semi-circle LHP ) w/ no ripple
(linear phase) in the passband w/ transfer function,
)
$% &' = *+, …(*+, ) and squared magnitude of
- 0
) 3
$% &' , |$% (&')| = )4(5/5 )7
6
• LPF =>? = 1 + B 3 ('/'C )3D , w/ ' = 'C , =>? =
3
1 + B , and if B = 1 à -3 dB point
• PLR vs '/'C à higher order à higher stopband
attenuation
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Chebyshev Type 1 and Type 2
• All pole filter w/ ripple in passband (Type1) or
stopband (Type 2); faster transition vs Butterworth
• Move poles of the normalized Butterworth à
ellipse of a unit circle ß product ℜ and ℑ pole
positions and constants, &' < 1 and &* < 1
• LPF +,- = 1 + 0 1 231 (5/57 )13 , where 231 is the
Nth-order Chebyshev polynomial, and oscillates
between ±1 in the passband
• Ripple is determined by 0 1
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Elliptic (or Cauer)
• Ripple in passband and stopband w/ rapid
transition (narrow transition band) vs Butterworth
and Chebyshev
• Pole-zero configuration comprises poles and zeros
• Large phase distortions at edge of the passband à
non-linear phase characteristic
• LPF !"# = 1 + ' ( )*( (,/,. )(0 , where )* is
the Nth-order Elliptic function
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Chebyshev, Elliptic and Bessel
[Roberts, 2012]
Filters and Elliptic
Butterworth, Chebyshev
* Design of CMOS RF-Integrated
IN5240: M. J. Roberts - All Rights Reserved 8
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
RC, RL & LC
• J LC: no noise, no power dissipation, double pole
(second-order) filters à higher stopband attenuation
• L LC: may resonate if not properly damped, more
expensive than RC due to higher inductor cost à
die area
• @ RF: LC
• @ BB: active filters as LC not feasible à large
inductor values
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
[Storey, 1992]
RC vs RL
A comparison of
RC and RL networks.
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Once that is done, we can now design a second order prototype filter for a sour
[EE133,
impedance of 1 ohm, a cut-off frequency of 1 rad/sec. As shown in the2002]
figure below,
of two equivalent ladder circuits. Note the way the element values are numbered, with
generator to gN+1 at the load.
LPP Ladder Normalized
How to read this chart:
g o = generator resistance
or a
generator conductanc
gk=
inductance for series i
or a
capacitance for shunt c
g N+1 =
load resistance if g N is
or a
load conductance if g N
A key point is that the com
alternate between shunt an
Note that during out proto
inductors are always serie
are always shunt. The onl
is whether or not the first
series or shunt.
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Impedance and Frequency Scaling
• Normalized capacitors and inductors (!" , !$ , … !& )
à denormalized by:
)* 2* 0
'= & 1=
($,-. )0 $,-.
• !" and !&4" denote source and load impedances
and are equal to 1
• ', 1 and ! (normalized values) are obtained from a
look-up table
IN5240: Design of CMOS RF-Integrated Circuits,
Dag T. Wisland and Sumit Bagga Institutt for Informatikk
LP à HP Transformation
• Inductors à capacitors and capacitors à
inductors
• Transform LPF normalized component values à
normalized HPF values
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
[Kim, EEE 194]
Transformation from LPP
IN5240: Design of CMOS RF-Integrated Circuits,
Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Frequency Transformation
LP normalized to un-normalized LP, high pass, band
pass or band stop
• LP to LP: ! → !/$%
• LP to HP: ! → $% /!
• LP to BP: ! → (! ' + $) $* )/(s($) − $* ))
• LP to BS: ! → s($) − $* ))/(! ' + $) $* )
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
T and π Filter Networks (rfcec.com)
IN5240: Design of CMOS RF-Integrated Circuits,
Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Transforming T to π and vice versa
• Pi: !" |!$ |!%
– !" = (!) !* + !) !, + !* !, )/!*
– !$ = (!) !* + !) !, + !* !, )/!)
– !% = (!) !* + !) !, + !* !, )/!,
• T: !) |!, |!*
– !) = (!" !% )/(!" + !$ + !% )
– !* = (!$ !% )/(!" + !$ + !% )
– !, = (!" !$ )/(!" + !$ + !% )
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
1st-Order Filters
85
EE 323 - Filters
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
1st-Order Filters contd.
IV. SECOND ORDER FUNCTIONS
The general second order (bi-quadratic) filter transfer function is give by:
IN5240: Design of CMOS RF-Integrated
a 2 s 2 + aInstitutt
1s + a 0 for Informatikk
Circuits, Dag T. Wisland and Sumit Bagga Ts ) =
ω
s 2 + 0 s + ω20
Q
[analog.com]
2nd-Order Filters
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
2nd-Order Filters contd.
87
Followings are the transfer functions and responses of various 2nd order filters.
EE 323 - Filters
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
2nd-Order Filters contd.
88
EE 323 - Filters
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
E.g. Q-Boosted 5th-Order SHT HPF V1
L1
C1 C2
A B
RFi,+ RFo,+
L2 L3
VDD
RFi,- RFo,-
C D
C1 C2
L1
V1
B A D C
A C A
M1 M2 M3 M4
I1 I2
Comprises capacitive elements C1, C2, V1 (varactor) and inductive
elements L1, L2 and L3
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Q-Boosted 5th-Order SHT HPF contd.
HPF S21 with and without Q-Boosting HPF S11 with and without Q-Boosting
0 0
M-S11 w/ Q-B
Input Reflection Coefficient, S11 [dB]
-5
M-S11 w/o Q-B
Forward Trans. Coeff., S21 [dB]
-5
-10
-15 -10
-20
-25 -15
-30 -20
-35
-40 -25
-45
M-S21 w/ Q-B -30
-50 M-S21 w/o Q-B
-55 -35
1 2 3 4 5 6 7 8 9 10 5 6 7 8 9 10
Frequency [GHz] Frequency [GHz]
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
E.g. Q-Boosted 5th-Order DHT HPF
L4
V1
L1
C1 C2
A B
RFi,+ RFo,+
SHT and DHT HPF Frequency Responses
2 parallel resonant tanks L2 L3 0
Forward Trans. Coeff., S21 [dB]
(L1-V1, L4-C1) VDD
-10
RFi,- RFo,-
C D
C1 C2 -20
L1
V1 -30
L4
B A D C
-40
A C A
M1 M2 M3 M4
-50 T-DHT
T-SHT
I1 I2
-60
1 2 3 4 5 6 7 8 9 10
A RFi,+ C RFi,- Frequency [GHz]
RFi,+ RFi,- RFi,+
M5 M6 M7 M8
I3 I4
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
[Pavan, 2006]
Transformers
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Transformer Leakage Model
$ % &' &% $ % &% $ % &%
!" = &' (
!) = (
!) = !) = *+!)
$ &' &%
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
Homework
• Design a 50 Ω doubly termination BPF w/ lower
and upper cut-off frequencies at 6 and 10 GHz,
respectively, and at least 20 dB stopband
attenuation at 500 MHz offset.
• Choose the order and type of the filter
appropriately.
• Hint: maximize Q of the passive components!
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
References
1. M. J. Roberts, Signals and Systems: Analysis
Using Transform Methods & MATLAB, 2012
2. N. Storey, Electronics a System Approach, 1992
3. Cookbook Winter Guide, EE133, 2002
4. S. Pavan, Integrated circuit implementation for
power and area efficient adaptive equalization,
US 7142596 B2, 2006
5. E. Kim, EEE 194
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga Institutt for Informatikk
