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SN74HCT132

The document provides specifications for the M74HCT132 quad 2-input Schmitt NAND gate integrated circuit. Key details include: - It has high speed performance similar to LSTTL logic but with low power CMOS consumption. - Each gate has two Schmitt trigger inputs and one output, with propagation delays of around 20ns and input hysteresis of around 15% of the supply voltage. - The device can drive 10 standard TTL loads and has symmetrical 4mA drive capability on outputs. - It is fabricated using silicon gate CMOS technology and is pin compatible with 74-series logic for easy replacement.

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0% found this document useful (0 votes)
56 views

SN74HCT132

The document provides specifications for the M74HCT132 quad 2-input Schmitt NAND gate integrated circuit. Key details include: - It has high speed performance similar to LSTTL logic but with low power CMOS consumption. - Each gate has two Schmitt trigger inputs and one output, with propagation delays of around 20ns and input hysteresis of around 15% of the supply voltage. - The device can drive 10 standard TTL loads and has symmetrical 4mA drive capability on outputs. - It is fabricated using silicon gate CMOS technology and is pin compatible with 74-series logic for easy replacement.

Uploaded by

Forray Ferenc
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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 M74HCT132

QUAD 2-INPUT SCHMITT NAND GATE


PRELIMINARY DATA
■ HIGH SPEED: tPD = 20 ns (TYP.) at VCC = 4.5V
■ LOW POWER DISSIPATION:
ICC = 1 µA (MAX.) at TA = 25 oC
■ OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
■ HIGH NOISE IMMUNITY B1R M1R
VH (TYP.) = 0.71V AT VCC = 4.5V (Plastic Package) (Micro Package)
■ SYMMETRICAL OUTPUT IMPEDANCE: ORDER CODES :
|IOH| = IOL = 4 mA (MIN) M74HCT132B1R M74HCT132M1R
■ BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL configuration and function are identical to those
■ PIN AND FUNCTION COMPATIBLE WITH of the M74HCT00.
74 SERIES 132 The hysteresis characteristics (around 15% VCC)
of all inputs allow slowly charging input signals to
DESCRIPTION be transformed into sharply defined jitter-free
The M74HCT132 is a high speed CMOS QUAD output signals.
2-INPUT SCHMITT NAND GATE fabricated in All inputs are equipped with protection circuits
silicon gate C2MOS tecnology. It has the same
against static discharge and transient excess
high speed performance of LSTTL combined with
voltage.
true COMS low power consumption. Pin

PIN CONNECTION AND IEC LOGIC SYMBOLS

June 1998 1/7


74HCT132

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION


PIN No SYMBOL NAME AND F UNCTIO N
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14 VCC Positive Supply Voltage

TRUTH TABLE
A B Y
L L H
L H H
H L H
H H L

ABSOLUTE MAXIMUM RATINGS


Symbol Parameter Value Unit
VCC Supply Voltage -0.5 to +7.0 V
VI DC Input Voltage -0.5 to VCC + 0.5 V
VO DC Output Voltage -0.5 to VCC + 0.5 V
IIK DC Input Diode Current ± 20 mA
IOK DC Output Diode Current ± 20 mA
IO DC Output Current ± 25 mA
ICC or IGND DC VCC or Ground Current ± 50 mA
PD Power Dissipation 500 (*) mW
o
Tstg Storage Temperature -65 to +150 C
o
TL Lead Temperature (10 sec) 300 C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
(*) 500 mW: ≅ 65 oC derate 300 mW by 10 mW/oC: 65 oC to 80 oC

RECOMMENDED OPERATING CONDITIONS


Symbol Parameter Value Un it
VCC Supply Voltage 4.5 to 5.5 V
VI Input Voltage 0 to VCC V
VO Output Voltage 0 to VCC V
o
Top Operating Temperature -40 to +85 C

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74HCT132

DC SPECIFICATIONS
Symbol Parameter Test Co nditio ns Value Unit
V CC T A = 25 oC -40 to 85 o C
(V) Min. Typ . Max. Min. Max.
Vt+ High Level Threshold 4.5 1.2 1.55 1.9 1.2 1.9
V
Voltage 5.5 1.4 1.75 2.1 1.4 2.1
Vt- Low Level Threshold 4.5 0.5 0.85 1.2 0.5 1.2
V
Voltage 5.5 0.6 1.1 1.4 0.6 1.4
Vh Hysteresis Voltage 4.5 0.4 0.7 1.4 0.4 1.4
V
5.5 0.4 0.7 1.5 0.4 1.5
(*)
VOH High Level Output 4.5 VI = IO=-50 µA 4.4 4.5 4.4
Voltage 4.5 V I L or IO=-8 mA 4.18 4.31 4.13 V
VI H
VOL Low Level Output 4.5 V I (*) = IO=50 µA 0.0 0.1 0.1
V
Voltage 4.5 VI H IO=8 mA 0.17 0.26 0.33
II Input Leakage Current 5.5 VI = 5.5V or GND ±0.1 ±1.0 µA
ICC Quiescent Supply 5.5 VI = VCC or GND 1 10 µA
Current
(*) All outputs loaded.

AC ELECTRICAL CHARACTERISTICS (CL = 50pF, Input tr = tf =6 ns)


Symbol Parameter Test Con dition Value Unit
o o
V CC T A = 25 C -40 to 85 C
(V) Min. Typ . Max. Min. Max.
tTLH Output Transition Time 4.5 7.0 15.0 19.0 ns
tTHL
tPLH Propagation Delay 4.5 20.0 33.0 41.0 ns
tPHL Time
(*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5V ± 0.5V

CAPACITIVE CHARACTERISTICS
Symbol Parameter Test Co nditio ns Value Unit
o o
T A = 25 C -40 to 85 C
Min. Typ . Max. Min. Max.
CIN Input Capacitance 3.5 pF
C PD Power Dissipation 20 pF
Capacitance (note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to
Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/4 (per Gate)

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74HCT132

TEST CIRCUIT

CL = 15/50 pF or equivalent (includes jig and probe capacitance)


RT =ZOUT of pulse generator (typically 50Ω)

WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)

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74HCT132

Plastic DIP-14 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 1.39 1.65 0.055 0.065

b 0.5 0.020

b1 0.25 0.010

D 20 0.787

E 8.5 0.335

e 2.54 0.100

e3 15.24 0.600

F 7.1 0.280

I 5.1 0.201

L 3.3 0.130

Z 1.27 2.54 0.050 0.100

P001A

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74HCT132

SO-14 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45 (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S 8 (max.)

P013G

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74HCT132

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics

 1998 STMicroelectronics – Printed in Italy – All Rights Reserved


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