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2 SD 2438

This document provides product specifications for the 2SD2438 silicon NPN Darlington power transistor from JMnic. It includes: 1) Description of the TO-3PML package and complementary transistor type. 2) Maximum ratings for voltage, current, power and temperature. 3) Pinout diagram showing the base, collector, and emitter pins. 4) Typical characteristics including voltage and current ratings, gain, switching times and capacitance. 5) Package outline dimensions for the TO-3PML package.

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191 views3 pages

2 SD 2438

This document provides product specifications for the 2SD2438 silicon NPN Darlington power transistor from JMnic. It includes: 1) Description of the TO-3PML package and complementary transistor type. 2) Maximum ratings for voltage, current, power and temperature. 3) Pinout diagram showing the base, collector, and emitter pins. 4) Typical characteristics including voltage and current ratings, gain, switching times and capacitance. 5) Package outline dimensions for the TO-3PML package.

Uploaded by

victor zapata
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Product Specification www.jmnic.

com

Silicon NPN Darlington Power Transistors 2SD2438

DESCRIPTION ・
・With TO-3PML package
・Complement to type 2SB1587

APPLICATIONS
・Audio, Series Regulator and
General Purpose

PINNING

PIN DESCRIPTION

1 Base

2 Collector

3 Emitter

Fig.1 simplified outline (TO-3PML) and symbol

Maximum absolute ratings(Tc=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 160 V

VCEO Collector-emitter voltage Open base 150 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 8 A

IB Base current 1 A

PC Collectorl power dissipation TC=25℃ 75 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃

JMnic
Product Specification www.jmnic.com

Silicon NPN Darlington Power Transistors 2SD2438

CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO Collector-emitter breakdown voltage IC=30mA; IB=0 150 V

VCEsat Collector-emitter saturation voltage IC=6 A;IB=6m A 2.5 V

VBEsat Base-emitter saturation voltage IC=6 A;IB=6m A 3.0 V

ICBO Collector cut-off current VCB=160V IE=0 100 μA

IEBO Emitter cut-off current VEB=5V; IC=0 100 μA

hFE DC current gain IC=6A ; VCE=4V 5000

fT Transition frequency IC=1A ; VCE=12V 80 MHz

COB Output capacitance IE=0; VCB=10V;f=1MHz 85 pF

Switching times

ton Turn-on time 0.6 μs


IC=6A;RL=10Ω
ts Storage time IB1=-IB2=6mA 10.0 μs
VCC=60V
tf Fall time 0.9 μs

hFE classifications
O P Y

5000-12000 6500-20000 15000-30000

JMnic
Product Specification www.jmnic.com

Silicon NPN Darlington Power Transistors 2SD2438

PACKAGE OUTLINE

Fig.2 Outline dimensions

JMnic

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