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Product
STM4820
S a mHop Microelectronics C orp. Ver 1.0

N-Channel Enhancement Mode Field Effect Transistor

FEATURES
PRODUCT SUMMARY
Super high dense cell design for low R DS(ON).
V DSS ID R DS(ON) (m Ω) Max
Rugged and reliable.
21 @ VGS=10V
30V 8.9A Suface Mount Package.
30 @ VGS=4.5V ESD Protected.

D 5 4 G

D 6 3 S

D 7 2 S
S O-8
D 8 1 S
1

ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )

Symbol Parameter Limit Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
a
TA=25°C 8.9 A
ID Drain Current-Continuous
TA=70°C 7.1 A
b
IDM -Pulsed 45 A
EAS Sigle Pulse Avalanche Energy d 10 mJ
a TA=25°C 2.5 W
PD Maximum Power Dissipation
TA=70°C 1.6 W
Operating Junction and Storage
TJ, TSTG -55 to 150 °C
Temperature Range

THERMAL CHARACTERISTICS
a
R JA Thermal Resistance, Junction-to-Ambient 50 °C/W

Details are subject to change without notice. Aug,05,2008

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STM4820
Ver 1.0

ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 V
IDSS Zero Gate Voltage Drain Current VDS=24V , VGS=0V 1 uA
IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ±10 uA

ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage VDS=VGS , ID=250uA 1 1.7 3 V
VGS=10V , ID=8.9A 17 21 m ohm
RDS(ON) Drain-Source On-State Resistance
VGS=4.5V , ID=7.5A 23 30 m ohm
gFS Forward Transconductance VDS=10V , ID=8.9A 14 S
c
DYNAMIC CHARACTERISTICS
CISS Input Capacitance 460 pF
VDS=15V,VGS=0V
COSS Output Capacitance 135 pF
f=1.0MHz
CRSS Reverse Transfer Capacitance 75 pF
c
SWITCHING CHARACTERISTICS
tD(ON) Turn-On Delay Time VDD=15V 8 ns
tr Rise Time ID=1A 12 ns
tD(OFF) Turn-Off Delay Time VGS=10V 19 ns
tf Fall Time RGEN=6 ohm 26 ns
VDS=15V,ID=8.9A,VGS=10V 7.6 nC
Qg Total Gate Charge
VDS=15V,ID=8.9A,VGS=4.5V 3.8 nC
Qgs Gate-Source Charge VDS=15V,ID=8.9A, 1.2 nC
Qgd Gate-Drain Charge VGS=10V 3.6 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS Maximum Continuous Drain-Source Diode Forward Current 2.0 A
VSD Diode Forward Voltage VGS=0V,IS=2.0A 0.78 1.3 V
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width < _ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,RG=25Ω,VDD=20V,VGS=10V.(See Figure13)

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STM4820
Ver 1.0

35 20
VGS=10V
VGS=4V
28 VGS=4.5V 16
I D, Drain Current(A)

ID, Drain Current(A)

VGS=3.5V
21 12

14 8
-55 C
VGS=3V Tj=125 C
7 4 25 C

0 0
0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2

V DS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

60 1.6

50 1.5
R DS(on), On-Resistance

V G S =10V
40 1.4
R DS(on)(m Ω)

I D =8.9A
Normalized

30 VGS=4.5V 1.3

20 1.2

VGS=10V V G S =4.5V
10 1.1 I D =7.5A

1 0.0
1 7 14 21 28 35 0 25 50 75 100 125 150
T j ( °C )
ID, Drain Current(A) Tj, Junction Temperature(° C )

Figure 3. On-Resistance vs. Drain Current Figure 4. On-Resistance Variation with Drain
and Gate Voltage Current and Temperature

1.3 1.15
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage

VDS=VGS ID=250uA
1.2 1.10
ID=250uA
BVDSS, Normalized
Vth, Normalized

1.1
1.05
1.0
1.00
0.9
0.95
0.8
0.90
0.7

0.6 0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C )

Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation

with Temperature with Temperature
Aug,05,2008

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STM4820
Ver 1.0

60 20.0
ID=8.9A

Is, Source-drain current(A)

50
10.0
40
R DS(on)(m Ω)

75 C
125 C
30
25 C
20
25 C 125 C 75 C
10

0 1.0
0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4
V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V)

Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage

Gate-Source Voltage Variation with Source Current

600 10
V GS, Gate to Source Voltage(V)

500 VDS=15V
Ciss 8
ID=8.9A
C, Capacitance(pF)

400
6
300
4
200
Coss
2
100
Crss
0 0
0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9
V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC)
Figure 9. Capacitance Figure 10. Gate Charge

600 100

it
L im 10
0u
N) s
(O
I D, Drain Current(A)

DS
100 Tr 10 R 1m
Switching Time(ns)

s
60 TD(on)
10
ms
TD(off )
Tf
1s
1 DC
10

VDS=15V,ID=1A V G S =10V
VGS=10V 0.1 S ingle P uls e
T A =25 C
1 0.05
1 6 10 60 100 300 600 0.1 1 10 30 70

Rg, Gate Resistance(Ω) VDS, Drain-Source Voltage(V)

Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area

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STM4820
Ver 1.0

V ( BR )D S S
15V
tp

L D R IVE R
VDS

RG D .U .T +
- VD D
IA S A
20V
tp 0.0 1 IAS

Unclamped Inductive Test Circuit Unclamped Inductive Waveforms

F igure 13a. F igure 13b.

1
0.5
Normalized Transient

0.2
Thermal Resistance

0.1
0.1
0.05

0.02
0.01 P DM

0.01 t1
Single Pulse t2

1. R thJ A (t)=r (t) * R thJ A

2. R thJ A =S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
0.001
0.0000 1 0.000 1 0.001 0.01 0. 1 1 10 100 1000
Square Wave Pulse Duration(sec)

Figure 14. Normalized Thermal Transient Impedance Curve

Aug,05,2008

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STM4820
Ver 1.0

PACKAGE OUTLINE DIMENSIONS

SO-8

E
D

0.015X45±
C
A

0.008
TYP.
A1

e B
0.05 TYP. 0.016 TYP.
H

MILLIME T E R S INC HE S
S Y MB OLS
MIN MAX MIN MAX
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 4.98 0.189 0.196
E 3.81 3.99 0.150 0.157
H 5.79 6.20 0.228 0.244
L 0.41 1.27 0.016 0.050
0± 8± 0± 8±

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STM4820
Ver 1.0

SO-8 Tape and Reel Data

SO-8 Carrier Tape
P1

D1 P2
A

E1
E2

E
B0

A0 D0 P0 A

T TERMINAL NUMBER 1

SECTION A-A

K0 FEEDING DIRECTION

unit:р
PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T

SOP 8N ӿ1.5 12.0

6.50 5.25 2.10 ӿ1.55 1.75 5.5 8.0 4.0 2.0 0.30
²0.15 +0.3 ²0.10 ²0.10 ²0.013
150п ²0.10 ²0.10 (MIN) ²0.10 ²0.10 ²0.10 ²0.10
- 0.1

SO-8 Reel
W1

S
G
N

K
M
V

R
H

W
UNIT:р
TAPE SIZE REEL SIZE M N W W1 H K S G R V

12 р 330 62 12.4 16.8 ӿ12.75 2.0

ӿ330
² 1 ²1.5 + 0.2 - 0.4 + 0.15 ²0.15

Aug,05,2008

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