KONERU LAKSHMAIAH EDUCATION FOUNDATION

(Deemed to be University estd, u/s, 3 of the UGC Act, 1956)

(NAAC Accredited “A++” Grade University)

Green Fields, Guntur District, A.P., India – 522502

Department of Electronics and Communication Engineering

(DST - FIST Sponsored Department)

B.Tech. III ECE PROGRAM

A.Y.2023-24 ODD, Semester-I
21EC3061 Analog VLSI Design
CO1

Session 3: Second order effects of MOSFET

1. Course Description (Description about the subject)

Analog VLSI Design is a course offered to create students who are academically and
practically skilled in designing analog circuits which are required as building blocks for the
real time applications. During this course, the students will learn about the process of
analyzing the different parameters of a circuit by varying different loads and different
configurations. This course provides insights to amplifiers, Op-amps and mixer circuits.

2. Aim

To learn the effects of short channel MOSFETs through various secondary effects.

3. Instructional Objectives (Course Objectives)

 Apply the fundamentals of MOS transistors for the design of single stage amplifiers.
 Realize the active & passive current Mirrors and analyze the differential amplifiers
with qualitative and quantative approaches.
 Analyze the CMOS Op Amps, and various types of Op Amps with qualitative and
quantative approaches.
 Analyze the high frequency response of CS, CG and CD amplifiers and noise analysis
of various amplifiers and mixers.

4. Learning Outcomes (Course Outcome)

CO1: Apply the fundamentals of MOS transistors for the design of single stage amplifiers.

5. Module Description (CO-1 Description)

Remember the basics properties of MOS Devices. Understand the functionality and Electrical
Properties of MOS Devices. Understand and apply the concept of various amplifiers to find
the circuit parameters.

6. Session Introduction

“Secondary effects of MOSFET”

The session provides insights to learn the reason for the existence of secondary effects of
MOSFET and their consequences on the function of MOSFET.

7. Session description

We have studied until now that for a MOSFET operating in saturation, the drain current is
independent of the drain-to-source voltage 𝑉𝐷𝑆 i.e.

But this is only approximately true!

Fig.1 NMOS in saturation mode

The pinch-off point moves towards the source with the increase in VDS.

• Channel length reduces.

• Channel resistance decreases

This modulation of channel length (L) by VDS is known as channel-length modulation and
leads to slight dependence of 𝐼𝐷 on VDS.

The drain current in saturation mode is:

(1)

The decrease in channel length with increase in VDS essentially increases the drain current ID

7.1 Second Order Effect - Channel Length Modulation

 (2)

• Therefore, the drain current in saturation mode becomes:

(3)

7.2 Second Order Effect – Body Effect

• In discrete circuit usually there is no body effect as the body is connected to the
source terminal.

• In integrated circuit, there are thousands or millions of MOSFET source terminals.

and there is only one Body (B) – the silicon Substrate.

• Thus, if we were to tie (connect) all the MOSFET source terminals to the single body
terminal, we would be connecting all the MOSFET source terminals to each other.

• This would almost certainly result in a useless circuit!

• Therefore, for integrated circuits, the MOSFET source terminals are not connected to
the substrate body.

• Actually, the substrate is connected to the most negative power supply for NMOS
circuit for achieving the desired functionality from the device.

• In such a scenario, what happens if the bulk voltage drops below the source voltage?

• Now the voltage 𝑽𝑺𝑩(voltage source-to-body) is not necessarily equal to zero (i.e.,
𝑉𝑆𝐵 ≠ 0 ). Thus, we are back to a four-terminal MOSFET device.

• There are many ramifications of this body effect; perhaps the most significant is

about the threshold voltage 𝑉𝑇.

• To understand, let us assume VS = VD = VB = 0, and VG is somewhat less than VT. A

depletion region forms but no inversion layer exists.

• As VB becomes negative, more holes get attracted to the substrate which leaves a
larger negative charge behind and as a result the depletion region becomes wider.
 • The wider depletion region leads to increase in threshold voltage given by:

(4)

7.3 Second Order Effect – Voltage Limitations

• Various breakdown occurs if their terminal voltage differences exceed certain limits

• At high VGS, the gate oxide breaks down irreversibly.

• In short-channel devices, an excessively large VDS can widen the depletion region
around the drain so much that it touches that around the source, creating a very large
drain current results in punch through.

8. Activities/ Case studies/related to the session

1. Case study: Body effect (back-gate effect) in MOSFETs

Application: Low-power integrated circuits (ICs)

Description: In low-power IC designs, the body effect plays a crucial role in threshold
voltage modulation. A case study could involve analyzing the impact of body biasing
techniques on the threshold voltage of MOSFETs in order to optimize power consumption
and performance. By leveraging body biasing, designers can dynamically adjust the threshold
voltage and enhance circuit efficiency in portable devices with varying power requirements.

2. Case study: Channel length modulation in MOSFETs

Application: Power amplifiers

Description: Channel length modulation affects the output characteristics of MOSFETs,

particularly in saturation region. In power amplifier design, accurate modeling and analysis of
channel length modulation are essential for optimizing linearity and power efficiency. A case
study could involve evaluating the impact of channel length modulation on distortion and
power efficiency in a high-power RF power amplifier.

9. Examples & contemporary extracts of articles/ practices to convey the idea of the
session

1. Example: Avalanche breakdown in power diodes

Description: Avalanche breakdown is a secondary effect that occurs in power diodes when
the reverse voltage exceeds a critical value, leading to a sudden increase in current. This
effect is utilized in circuit protection devices like transient voltage suppressors (TVS) and
surge protectors. An example case study could involve analyzing the avalanche breakdown
characteristics of a power diode to design an effective overvoltage protection circuit for
sensitive electronic components.

2. Extract from an article titled "Impact of Secondary Effects on MOSFET Performance"

(Source: IEEE Xplore):
"Secondary effects in MOSFETs can significantly impact their performance and reliability.
Factors such as self-heating, hot carrier effects, and oxide breakdown can cause degradation
of device parameters, leading to reduced lifetime and performance. This article presents an
in-depth study on the impact of secondary effects in MOSFETs, including simulation
techniques and mitigation strategies. It explores the trade-offs between device scaling,
performance, and reliability, providing valuable insights for designers in achieving optimal
device performance while ensuring long-term reliability."

10. SAQ's-Self Assessment Questions

1. Which of the following secondary effects occurs when a MOSFET is operated at high
temperatures?

a) Negative temperature coefficient

b) Positive temperature coefficient

c) Thermal runaway

d) Avalanche breakdown

2. What is the primary cause of the body effect in a MOSFET?

a) Substrate biasing

b) Threshold voltage variation

c) Gate oxide breakdown

d) Channel length modulation

3. When a MOSFET operates in the subthreshold region, which effect is predominant?

a) Drain-induced barrier lowering

b) Body effect

c) Channel length modulation

d) Avalanche breakdown

4. Which secondary effect can lead to a decrease in the MOSFET's threshold voltage?
 a) Hot carrier injection

b) Gate oxide breakdown

c) Negative bias temperature instability

d) Positive bias temperature instability

5. The presence of a parasitic bipolar transistor in a MOSFET structure can cause:

a) Latch-up

b) Body effect

c) Threshold voltage variation

d) Avalanche breakdown

6. The kink effect in a MOSFET occurs due to:

a) Incomplete channel pinch-off

b) Punch-through breakdown

c) Body effect

d) Avalanche breakdown

7. Which secondary effect can result in increased off-state leakage current in a MOSFET?

a) Hot carrier injection

b) Positive bias temperature instability

c) Negative bias temperature instability

d) Body effect

8. The substrate current in a MOSFET is primarily caused by:

a) Incomplete channel pinch-off

b) Substrate biasing

c) Threshold voltage variation

d) Avalanche breakdown

9. Which secondary effect is responsible for the decrease in threshold voltage with decreasing
gate length?

a) Hot carrier injection

 b) Channel length modulation

c) DIBL (Drain-Induced Barrier Lowering)

d) Body effect

10. Which effect can lead to an increase in the MOSFET's output resistance?

a) Body effect

b) Channel length modulation

c) Gate oxide breakdown

d) Substrate biasing

11. What is the primary cause of the kink effect in a MOSFET?

a) Impact ionization

b) Gate oxide breakdown

c) Incomplete channel pinch-off

d) Hot carrier injection

12. Which secondary effect can cause a decrease in the MOSFET's transconductance?

a) Body effect

b) Positive bias temperature instability

c) Channel length modulation

d) Gate oxide breakdown

13. Which effect is responsible for the increase in drain current with increasing drain voltage
in a MOSFET?

a) Body effect

b) Drain-induced barrier lowering

c) Channel length modulation

d) Avalanche breakdown

14. The presence of a body diode in a MOSFET can cause:

a) Reverse recovery effect

b) Threshold voltage variation

 c) Latch-up

d) Hot carrier injection

15. Which secondary effect can lead to an increase in the MOSFET's on-resistance?

a) Body effect

b) Gate oxide breakdown

c) Channel length modulation

d) Substrate biasing

16. What is the primary cause of the on-resistance variation in a MOSFET?

a) Channel length modulation

b) Threshold voltage variation

c) Hot carrier injection

d) Substrate biasing

17. Which secondary effect can cause a shift in the MOSFET's threshold voltage over time?

a) Negative bias temperature instability

b) Positive bias temperature instability

c) Body effect

d) Gate oxide breakdown

18. The presence of a parasitic capacitance in a MOSFET structure can cause:

a) Miller effect

b) Body effect

c) Threshold voltage variation

d) Avalanche breakdown

19. Which secondary effect can lead to an increase in the MOSFET's gate leakage current?

a) Gate oxide breakdown

b) Body effect
 c) Hot carrier injection

d) Substrate biasing

20. Which effect can cause a reduction in the MOSFET's breakdown voltage?

a) Hot carrier injection

b) Gate oxide breakdown

c) Body effect

d) Channel length modulation

11. Summary

Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the
length of the inverted channel region with increase in drain bias for large drain biases. The
result of CLM is an increase in current with drain bias and a reduction of output resistance.
The body effect is the change in the threshold voltage by an amount approximately equal to
the change in the source-bulk voltage, , because the body influences the threshold voltage
(when it is not tied to the source)

12. Terminal Questions

1. What are the second-order effects of MOSFETs and how do they impact circuit
performance?
2. Explain the body effect (back-gate effect) in MOSFETs and its implications on threshold
voltage and transconductance.
3. Discuss the impact of channel length modulation on MOSFET characteristics and how it
affects device behavior in saturation region.
4. What is the impact of drain-induced barrier lowering (DIBL) on MOSFET performance
and how does it affect subthreshold characteristics?
5. Describe the effects of substrate biasing
6. How does the presence of short channel effect behavior of MOSFETs?
7. Discuss the impact of temperature variations on MOSFET parameters.

13. Case Studies (Co Wise)

1. Case study for MOSFET basics:

Application: Power amplification in audio systems
Description: MOSFETs are commonly used in audio amplifiers due to their high power-
handling capabilities and low distortion. A case study could involve designing a high-fidelity
audio amplifier using MOSFETs, considering parameters such as power output, distortion,
and efficiency.

2. Case study for operating regions of a MOSFET:

Application: Digital logic gates
Description: MOSFETs are widely used in digital circuits to implement logic gates. A case
study could involve designing a digital circuit that utilizes MOSFETs in various operating
regions (cutoff, triode, and saturation) to demonstrate their switching characteristics and
understand their impact on digital signal processing.

3. Case study for VI characteristics of a MOSFET:

Application: Solar power conversion
Description: MOSFETs are utilized in solar power inverters for converting DC power
generated from solar panels into AC power suitable for household consumption. A case study
could involve analyzing the VI characteristics of a MOSFET in a solar inverter circuit,
considering factors such as efficiency, maximum power point tracking, and grid
synchronization.

14. Answer Key

1. c) Thermal runaway

2. b) Threshold voltage variation

3. b) Body effect

4. d) Positive bias temperature instability

5. a) Latch-up

6. a) Incomplete channel pinch-off

7. c) Negative bias temperature instability

8. b) Substrate biasing

9. c) DIBL (Drain-Induced Barrier Lowering)

10. b) Channel length modulation

11. c) Incomplete channel pinch-off

12. a) Body effect

13. c) Channel length modulation

14. a) Reverse recovery effect

15. d) Substrate biasing

16. a) Channel length modulation

17. b) Positive bias temperature instability

18. a) Miller effect

19. a) Gate oxide breakdown

20. b) Gate oxide breakdown

15. Glossary

CLM: Channel Length Modulation.

Vth: Threshold voltage

16. References of books, sites, links

Text Books:

1) BehzadRazavi, “Design of Analog CMOS Integrated Circuits”, Tata Mc Graw Hill, (2005)

2) Jacob Baker, “CMOS Mixed Signal Circuit Design”, John Wiley, (2008)

Reference Books:

1) Neil H. E. Weste and David. Harris Ayan Banerjee, “CMOS VLSI Design” – Pearson
Education, 1999.

2) Gray& Mayer, “Analysis & Design of Analog Integrated Circuits”, 4th edition, Wiley,
(2001).17. Keywords

Web references:

1. https://www.coursera.org/learn/mosfet
2. https://nptel.ac.in/courses/108106068
3. https://www.coursera.org/learn/rf-mmwave-circuit-design#syllabus

17. Keywords

Secondary effects, short channel, channel length modulation