600 V High Voltage 3-phase Motor Drivers

SCM1200MF Series Data Sheet

Description Package
The SCM1200MF series are high voltage 3-phase DIP33
motor drivers in which transistors, pre-drive circuits, and Pin Pitch: 1.27 mm
Mold Dimensions: 47 mm × 19 mm × 4.4 mm
bootstrap circuits (diodes and resistors) are highly
integrated.
These products can run on a 3-shunt current detection
system and optimally control the inverter systems of
medium-capacity motors that require universal input
standards.

Features
Not to scale
● Each Half-bridge Circuit Consists of a Pre-drive
Circuit
● In Case of Abnormal Operation, All Outputs Shut Selection Guide
Down via Three FO Pins Connected Together ● Power Device: IGBT + FRD (600 V)
● Built-in Bootstrap Diodes with Current Limiting
Resistors (22 Ω) IO Feature Part Number
● CMOS-compatible Input (3.3 V or 5 V)
● Pb-free (RoHS Compliant) 10 A Low noise SCM1261MF*
● Isolation Voltage: 2500 V (for 1 min), SCM1242MF
UL-recognized Component (File No.: E118037) 15 A Low noise
● Fault Signal Output at Protection Activation SCM1263MF*
● Protections Include: 20 A Low noise SCM1265MF*
Undervoltage Lockout for Power Supply
High-side (UVLO_VB): Auto-restart 30 A Low noise SCM1256MF
Low-side (UVLO_VCC): Auto-restart * Uses a shorter blanking time for OCP activation.
Overcurrent Protection (OCP): Auto-restart
Simultaneous On-state Prevention: Auto-restart
Thermal Shutdown (TSD): Auto-restart Applications
For motor drives such as:
Typical Application
● Refrigerator Compressor Motor
VCC VFO
U1 SCM1200MF Series ● Air Conditioner Compressor Motor
RFO
FO1
LS1 33
● Washing Machine Main Motor
1
●
INT
CFO 2 OCP1 Fan Motor
3 LIN1
●
LIN1
4 COM1
MIC1 U 32 Pump Motor
HIN1 5 HIN1
6 VCC1

31
7
VB1
8 HS1
CBOOT1 LS2
30
FO2
9
10 OCP2
LIN2 11 LIN2 V
MIC2
12 COM2 29 M
HIN2 13 HIN2
14 VCC2
Controller

28
15
VB2
16 HS2
CBOOT2 LS3
27
FO3
17
18 OCP3
LIN3 19 LIN3
MIC3 W
20 COM3 26
HIN3 21 HIN3
22 VCC3
VBB VDC
25
23
VB3
24 HS3
CBOOT3

A/D3
RO3
A/D2
RO3
A/D1
RO1
CO1 CO2 CO3
COM
RS3 RS2 RS1

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SCM1200MF Series

Contents
Description ------------------------------------------------------------------------------------------------------ 1
Contents --------------------------------------------------------------------------------------------------------- 2
1. Absolute Maximum Ratings----------------------------------------------------------------------------- 4
2. Recommended Operating Conditions ----------------------------------------------------------------- 5
3. Electrical Characteristics -------------------------------------------------------------------------------- 6
3.1. Characteristics of Control Parts------------------------------------------------------------------ 6
3.2. Bootstrap Diode Characteristics ----------------------------------------------------------------- 7
3.3. Thermal Resistance Characteristics ------------------------------------------------------------- 7
3.4. Transistor Characteristics ------------------------------------------------------------------------- 8
3.4.1. SCM1261MF ----------------------------------------------------------------------------------- 8
3.4.2. SCM1242MF ----------------------------------------------------------------------------------- 9
3.4.3. SCM1263MF ----------------------------------------------------------------------------------- 9
3.4.4. SCM1265MF --------------------------------------------------------------------------------- 10
3.4.5. SCM1256MF --------------------------------------------------------------------------------- 10
4. Mechanical Characteristics --------------------------------------------------------------------------- 11
5. Insulation Distance -------------------------------------------------------------------------------------- 11
6. Truth Table ----------------------------------------------------------------------------------------------- 12
7. Block Diagram ------------------------------------------------------------------------------------------- 13
8. Pin Configuration Definitions ------------------------------------------------------------------------- 14
9. Typical Applications ------------------------------------------------------------------------------------ 15
10. Physical Dimensions ------------------------------------------------------------------------------------ 17
10.1. Leadform 2552 ------------------------------------------------------------------------------------- 17
10.2. Leadform 2557 (Long Lead Type) ------------------------------------------------------------- 18
10.3. Reference PCB Hole Sizes ----------------------------------------------------------------------- 19
11. Marking Diagram --------------------------------------------------------------------------------------- 19
12. Functional Descriptions -------------------------------------------------------------------------------- 20
12.1. Turning On and Off the IC ---------------------------------------------------------------------- 20
12.2. Pin Descriptions ----------------------------------------------------------------------------------- 20
12.2.1. U, V, and W----------------------------------------------------------------------------------- 20
12.2.2. VBB -------------------------------------------------------------------------------------------- 20
12.2.3. VB1, VB2, and VB3 ------------------------------------------------------------------------- 20
12.2.4. HS1, HS2, and HS3 ------------------------------------------------------------------------- 21
12.2.5. VCC1, VCC2, and VCC3 ------------------------------------------------------------------ 21
12.2.6. COM1, COM2, and COM3---------------------------------------------------------------- 21
12.2.7. HIN1, HIN2, and HIN3; LIN1, LIN2, and LIN3 -------------------------------------- 22
12.2.8. LS1, LS2, and LS3 -------------------------------------------------------------------------- 22
12.2.9. OCP1, OCP2, and OCP3------------------------------------------------------------------- 23
12.2.10. FO1, FO2, and FO3 ------------------------------------------------------------------------- 23
12.3. Protection Functions ------------------------------------------------------------------------------ 24
12.3.1. Fault Signal Output ------------------------------------------------------------------------- 24
12.3.2. Shutdown Signal Input --------------------------------------------------------------------- 24
12.3.3. Undervoltage Lockout for Power Supply (UVLO) ----------------------------------- 24
12.3.4. Overcurrent Protection (OCP) ----------------------------------------------------------- 25
12.3.5. Simultaneous On-state Prevention ------------------------------------------------------- 27
12.3.6. Thermal Shutdown (TSD) ----------------------------------------------------------------- 27
13. Design Notes ---------------------------------------------------------------------------------------------- 28
13.1. PCB Pattern Layout ------------------------------------------------------------------------------ 28
13.2. Considerations in Heatsink Mounting -------------------------------------------------------- 28

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13.3. Considerations in IC Characteristics Measurement --------------------------------------- 28

14. Calculating Power Losses and Estimating Junction Temperature ---------------------------- 29
14.1. IGBT Steady-state Loss, PON -------------------------------------------------------------------- 29
14.2. IGBT Switching Loss, PSW ----------------------------------------------------------------------- 30
14.3. Estimating Junction Temperature of IGBT -------------------------------------------------- 30
15. Performance Curves ------------------------------------------------------------------------------------ 31
15.1. Transient Thermal Resistance Curves -------------------------------------------------------- 31
15.1.1. SCM1261MF --------------------------------------------------------------------------------- 31
15.1.2. SCM1242MF, SCM1263MF -------------------------------------------------------------- 31
15.1.3. SCM1265MF --------------------------------------------------------------------------------- 32
15.1.4. SCM1256MF --------------------------------------------------------------------------------- 32
15.2. Performance Curves of Control Parts--------------------------------------------------------- 33
15.3. Performance Curves of Output Parts --------------------------------------------------------- 39
15.3.1. Output Transistor Performance Curves ------------------------------------------------ 39
15.3.2. Switching Loss Curves --------------------------------------------------------------------- 41
15.4. Allowable Effective Current Curves ----------------------------------------------------------- 46
15.4.1. SCM1261MF --------------------------------------------------------------------------------- 46
15.4.2. SCM1242MF, SCM1263MF -------------------------------------------------------------- 47
15.4.3. SCM1265MF --------------------------------------------------------------------------------- 48
15.4.4. SCM1256MF --------------------------------------------------------------------------------- 49
15.5. Short Circuit SOAs (Safe Operating Areas) ------------------------------------------------- 50
15.5.1. SCM1261MF --------------------------------------------------------------------------------- 50
15.5.2. SCM1242MF, SCM1263MF -------------------------------------------------------------- 50
15.5.3. SCM1265MF --------------------------------------------------------------------------------- 51
15.5.4. SCM1256MF --------------------------------------------------------------------------------- 51
16. Pattern Layout Example ------------------------------------------------------------------------------- 52
17. Typical Motor Driver Application ------------------------------------------------------------------- 54
Important Notes ---------------------------------------------------------------------------------------------- 55

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SCM1200MF Series

1. Absolute Maximum Ratings

Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming
out of the IC (sourcing) is negative current (−).
Unless specifically noted, TA = 25°C.
Parameter Symbol Conditions Rating Unit Remarks
Main Supply Voltage
VDC VBB–LSx 450 V
(DC)
Main Supply Voltage
VDC(SURGE) VBB–LSx 500 V
(Surge)
IGBT Breakdown VCC = 15 V, IC = 1 mA,
VCES VIN = 0 V
600 V
Voltage
VCC VCCx–COMx 20
Logic Supply Voltage V
VBS VBx–HSx 20
10 SCM1261MF
15 SCM1242MF/63MF
Output Current(1) IO TC = 25 °C, TJ < 150 °C A
20 SCM1265MF
30 SCM1256MF
20 SCM1261MF
TC = 25 °C, PW ≤ 1 ms, SCM1242MF/63MF/
Output Current (Pulse) IOP single pulse
30 A 65MF
45 SCM1256MF
HINx–COMx,
Input Voltage VIN LINx–COMx
−0.5 to 7 V
FO Pin Voltage VFO FOx–COMx −0.5 to 7 V
OCP Pin Voltage VOCP OCPx–COMx −10 to 5 V
Operating Case
TC(OP) −30 to 100 °C
Temperature(2)
Junction Temperature(3) TJ 150 °C
Storage Temperature TSTG −40 to 150 °C
Between surface of
Isolation Voltage(4) VISO(RMS) heatsink side and each 2500 V
pin; AC, 60 Hz, 1 min

(1)
Should be derated depending on an actual case temperature. See Section 15.4.
(2)
Refers to a case temperature measured during IC operation.
(3)
Refers to the junction temperature of each chip built in the IC, including the control MICs, transistors, and
freewheeling diodes.
(4)
Refers to voltage conditions to be applied between all of the pins and the case. All the pins have to be shorted.

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SCM1200MF Series

2. Recommended Operating Conditions

Parameter Symbol Conditions Min. Typ. Max. Unit Remarks
COM1 = COM2 = COM3;
Main Supply Voltage VDC VBB–COM
— 300 400 V
VCC VCCx–COMx 13.5 — 16.5 V
Logic Supply Voltage
VBS VBx–HSx 13.5 — 16.5 V
Input Voltage
VIN 0 — 5.5 V
(HINx, LINx, FOx)
Minimum Input Pulse tIN(MIN)ON 0.5 — — μs
Width tIN(MIN)OFF 0.5 — — μs
Dead Time of Input
tDEAD 1.5 — — μs
Signal
FO Pin Pull-up Resistor RFO 1 — 22 kΩ
FO Pin Pull-up Voltage VFO 3.0 — 5.5 V
FO Pin Noise Filter
CFO 0.001 — 0.01 μF
Capacitor
Bootstrap Capacitor CBOOT 10 — 220 μF
IP ≤ 45 A 12 — — SCM1256MF
SCM1242MF/
Shunt Resistor RS IP ≤ 30 A 18 — — mΩ 63MF/65MF
IP ≤ 20 A 27 — — SCM1261MF
RC Filter Resistor RO — — 100 Ω
SCM1242MF
1000 — 2200 SCM1256MF
RC Filter Capacitor CO pF
1000 — 10000 SCM1260MF
PWM Carrier Frequency fC — — 20 kHz
Operating Case
TC(OP) — — 100 °C
Temperature

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3. Electrical Characteristics
Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming
out of the IC (sourcing) is negative current (−).
Unless specifically noted, TA = 25 °C, VCC = 15 V.

3.1. Characteristics of Control Parts

Parameter Symbol Conditions Min. Typ. Max. Unit Remarks
Power Supply Operation
VCC(ON) VCCx–COMx 10.5 11.5 12.5 V
Logic Operation Start Voltage
VBS(ON) VBx–HSx 10.5 11.5 12.5 V
VCC(OFF) VCCx–COMx 10.0 11.0 12.0 V
Logic Operation Stop Voltage
VBS(OFF) VBx–HSx 10.0 11.0 12.0 V
VCC1 = VCC2 = VCC3,
COM1 = COM2 = COM3;
ICC VCC pin current in 3-phase
— 3 — mA
Logic Supply Current operation
VBx–HSx = 15 V,
IBS HINx = 5 V; VBx pin — 140 — μA
current in 1-phase operation
Input Signal
High Level Input Threshold
VIH 1.5 2.0 2.5 V
Voltage (HINx, LINx, FOx)
Low Level Input Threshold
VIL 1.0 1.5 2.0 V
Voltage (HINx, LINx, FOx)
High Level Input Current
IIH VIN = 5 V — 230 500 μA
(HINx, LINx)
Low Level Input Current
IIL VIN = 0 V — — 2 μA
(HINx, LINx)
Fault Signal Output
FO Pin Voltage at Fault Signal
VFOL VFO = 5 V, RFO = 10 kΩ — — 0.5 V
Output
FO Pin Voltage in Normal
VFOH VFO = 5 V, RFO = 10 kΩ 4.8 — — V
Operation
Protection
OCP Threshold Voltage VTRIP 0.46 0.50 0.54 V
OCP Hold Time tP 20 26 — μs
SCM1242MF
— 1.65 — SCM1256MF
OCP Blanking Time tBK VTRIP = 1 V μs
— 0.54 — SCM1260MF
TSD Operating Temperature* TDH 135 150 — °C
TSD Releasing Temperature* TDL 105 120 — °C

* Refers to the junction temperature of the built-in control MICs.

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3.2. Bootstrap Diode Characteristics

Parameter Symbol Conditions Min. Typ. Max. Unit Remarks
Bootstrap Diode Leakage Current ILBD VR = 600 V — — 10 μA
Bootstrap Diode Forward
VFB IFB = 0.15 A — 1.1 1.3 V
Voltage
Bootstrap Diode Series Resistor RBOOT 17.6 22.0 26.4 Ω

3.3. Thermal Resistance Characteristics

Parameter Symbol Conditions Min. Typ. Max. Unit Remarks
— — 3.7 SCM1261MF
1 element operating
R(J-C)Q(2) (IGBT)
°C/W SCM12/42MF/
Junction-to-Case — — 3 63MF/65MF/56MF
Thermal Resistance(1) — — 4.5 SCM1261MF
1 element operating
R(J-C)F(3) (freewheeling diode)
°C/W SCM12/42MF/
— — 4 63MF/65MF/56MF

(1)
Refers to a case temperature at the measurement point described in Figure 3-1, below.
(2)
Refers to steady-state thermal resistance between the junction of the built-in transistors and the case. For transient
thermal characteristics, see Section 15.1.
(3)
Refers to steady-state thermal resistance between the junction of the built-in freewheeling diodes and the case.

24 1

25 33
Measurement point

Figure 3-1. Case Temperature Measurement Point

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SCM1200MF Series

3.4. Transistor Characteristics

Figure 3-2 provides the definitions of switching characteristics described in this and the following sections.

HINx/
LINx

0
trr
toff
ton
td(off) tf
td(on) tr
IC
90%

10%
0

VCE

Figure 3-2. Switching Characteristics Definitions

3.4.1. SCM1261MF
Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V — — 1 mA
Collector-to-Emitter Saturation
VCE(SAT) IC = 10 A, VIN = 5 V — 1.7 2.2 V
Voltage
Diode Forward Voltage VF IF = 10 A, VIN = 0 V — 1.7 2.2 V
High-side Switching
Diode Reverse Recovery Time trr — 85 — ns
Turn-on Delay Time td(on) VDC = 300 V, IC = 10 A, — 700 — ns
inductive load,
Rise Time tr — 100 — ns
VIN = 0→5 V or 5→0 V,
Turn-off Delay Time td(off) TJ = 25 °C — 1070 — ns
Fall Time tf — 90 — ns
Low-side Switching
Diode Reverse Recovery Time trr — 105 — ns
Turn-on Delay Time td(on) VDC = 300 V, IC = 10 A, — 710 — ns
inductive load,
Rise Time tr — 120 — ns
VIN = 0→5 V or 5→0 V,
Turn-off Delay Time td(off) TJ = 25 °C — 1010 — ns
Fall Time tf — 95 — ns

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3.4.2. SCM1242MF
Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V — — 1 mA
Collector-to-Emitter Saturation
VCE(SAT) IC = 15 A, VIN = 5 V — 1.7 2.2 V
Voltage
Diode Forward Voltage VF IF = 15 A, VIN = 0 V — 1.75 2.2 V
High-side Switching
Diode Reverse Recovery Time trr — 80 — ns
Turn-on Delay Time td(on) VDC = 300 V, IC = 15 A, — 700 — ns
inductive load,
Rise Time tr — 100 — ns
VIN = 0→5 V or 5→0 V,
Turn-off Delay Time td(off) TJ = 25 °C — 1300 — ns
Fall Time tf — 90 — ns
Low-side Switching
Diode Reverse Recovery Time trr — 90 — ns
Turn-on Delay Time td(on) VDC = 300 V, IC = 15 A, — 700 — ns
inductive load,
Rise Time tr — 130 — ns
VIN = 0→5 V or 5→0 V,
Turn-off Delay Time td(off) TJ = 25 °C — 1230 — ns
Fall Time tf — 90 — ns

3.4.3. SCM1263MF
Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V — — 1 mA
Collector-to-Emitter Saturation
VCE(SAT) IC = 15 A, VIN = 5 V — 1.7 2.2 V
Voltage
Diode Forward Voltage VF IF = 15 A, VIN = 0 V — 1.75 2.2 V
High-side Switching
Diode Reverse Recovery Time trr — 80 — ns
Turn-on Delay Time td(on) VDC = 300 V, IC = 15 A, — 700 — ns
inductive load,
Rise Time tr — 100 — ns
VIN = 0→5 V or 5→0 V,
Turn-off Delay Time td(off) TJ = 25 °C — 1300 — ns
Fall Time tf — 90 — ns
Low-side Switching
Diode Reverse Recovery Time trr — 90 — ns
Turn-on Delay Time td(on) VDC = 300 V, IC = 15 A, — 700 — ns
inductive load,
Rise Time tr — 130 — ns
VIN = 0→5 V or 5→0 V,
Turn-off Delay Time td(off) TJ = 25 °C — 1230 — ns
Fall Time tf — 90 — ns

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3.4.4. SCM1265MF
Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V — — 1 mA
Collector-to-Emitter Saturation
VCE(SAT) IC = 20 A, VIN = 5 V — 1.7 2.2 V
Voltage
Diode Forward Voltage VF IF = 20 A, VIN = 0 V — 1.9 2.4 V
High-side Switching
Diode Reverse Recovery Time trr — 80 — ns
Turn-on Delay Time td(on) VDC = 300 V, IC = 20 A, — 780 — ns
inductive load,
Rise Time tr — 120 — ns
VIN = 0→5 V or 5→0 V,
Turn-off Delay Time td(off) TJ = 25 °C — 1150 — ns
Fall Time tf — 90 — ns
Low-side Switching
Diode Reverse Recovery Time trr — 85 — ns
Turn-on Delay Time td(on) VDC = 300 V, IC = 20 A, — 810 — ns
inductive load,
Rise Time tr — 170 — ns
VIN = 0→5 V or 5→0 V,
Turn-off Delay Time td(off) TJ = 25 °C — 1100 — ns
Fall Time tf — 90 — ns

3.4.5. SCM1256MF
Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V — — 1 mA
Collector-to-Emitter Saturation
VCE(SAT) IC = 30 A, VIN = 5 V — 1.7 2.2 V
Voltage
Diode Forward Voltage VF IF = 30 A, VIN = 0 V — 1.9 2.4 V
High-side Switching
Diode Reverse Recovery Time trr — 70 — ns
Turn-on Delay Time td(on) VDC = 300 V, IC = 30 A, — 760 — ns
inductive load,
Rise Time tr — 130 — ns
VIN = 0→5 V or 5→0 V,
Turn-off Delay Time td(off) TJ = 25 °C — 1260 — ns
Fall Time tf — 90 — ns
Low-side Switching
Diode Reverse Recovery Time trr — 80 — ns
Turn-on Delay Time td(on) VDC = 300 V, IC = 30 A, — 770 — ns
inductive load,
Rise Time tr — 160 — ns
VIN = 0→5 V or 5→0 V,
Turn-off Delay Time td(off) TJ = 25 °C — 1200 — ns
Fall Time tf — 90 — ns

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SCM1200MF Series

4. Mechanical Characteristics
Parameter Conditions Min. Typ. Max. Unit Remarks
Heatsink Mounting
* 0.588 — 0.784 N∙m
Screw Torque
Flatness of Heatsink
See Figure 4-1. 0 — 200 μm
Attachment Area
Package Weight — 11.8 — g
* When mounting a heatsink, it is recommended to use a metric screw of M3 and a plain washer of 7 mm (φ) together at
each end of it. For more details about screw tightening, see Section 13.2.

Heatsink

Measurement position

-+

-
+

Heatsink

Figure 4-1. Flatness Measurement Position

5. Insulation Distance
Parameter Conditions Min. Typ. Max. Unit Remarks
Clearance Between heatsink* and 2.0 — 2.5 mm
Creepage leads. See Figure 5-1. 3.86 — 4.26 mm
* Refers to when a heatsink to be mounted is flat. If your application requires a clearance exceeding the maximum
distance given above, use an alternative (e.g., a convex heatsink) that will meet the target requirement.

Creepage
Clearance
Heatsink

Figure 5-1. Insulation Distance Definitions

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6. Truth Table
Table 6-1 is a truth table that provides the logic level definitions of operation modes.
In the case where HINx and LINx signals in each phase are high at the same time, the simultaneous on-state
prevention sets both the high- and low-side transistors off.
After the IC recovers from a UVLO_VCC condition, the high- and low-side transistors resume switching, according
to the input logic levels of the HINx and LINx signals (level-triggered).
After the IC recovers from a UVLO_VB condition, the high-side transistors resume switching at the next rising edge
of an HINx signal (edge-triggered).

Table 6-1. Truth Table for Operation Modes

Mode HINx LINx High-side Transistor Low-side Transistor

L L OFF OFF
H L ON OFF
Normal Operation
L H OFF ON
H H OFF OFF
L L OFF OFF

External Shutdown Signal Input H L OFF OFF

FO = L L H OFF OFF
H H OFF OFF
L L OFF OFF
Undervoltage Lockout for H L OFF OFF
High-side Power Supply
(UVLO_VB) L H OFF ON
H H OFF OFF
L L OFF OFF
Undervoltage Lockout for H L OFF OFF
Low-side Power Supply
(UVLO_VCC) L H OFF OFF
H H OFF OFF
L L OFF OFF
H L OFF OFF
Overcurrent Protection (OCP)
L H OFF OFF
H H OFF OFF
L L OFF OFF
H L OFF OFF
Thermal Shutdown (TSD)
L H OFF OFF
H H OFF OFF

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7. Block Diagram

MIC1
UVLO_VCC UVLO_VB
LS1 33
FO1
1
Drive HO1
2 OCP1 Level shift circuit
3 LIN1 Input logic
4 COM1 U 32
Simultaneous TSD
5 HIN1 on-state
prevention
6 VCC1 Drive LO1
circuit
OCP

31
7
VB1
8 HS1
MIC2
LS2
UVLO_VCC UVLO_VB 30
FO2
9
OCP2 Level shift Drive HO2
10 circuit
11 LIN2 Input logic
V
12 COM2 29
Simultaneous TSD
13 HIN2 on-state
prevention
14 VCC2 Drive LO2

OCP circuit

28
15
VB2
16 HS2
MIC3
LS3
UVLO_VCC UVLO_VB 27
FO3
17
Drive HO3
18 OCP3 Level shift circuit
19 LIN3 Input logic
20 COM3
W
26
Simultaneous TSD
21 HIN3 on-state
prevention
22 VCC3 Drive LO3

OCP circuit
VBB
25
23
VB3
24 HS3

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8. Pin Configuration Definitions

1 Top view
24 1

33
24

25
25 33

Pin Number Pin Name Description

1 FO1 U-phase fault signal output and shutdown signal input
2 OCP1 Input for U-phase overcurrent protection
3 LIN1 Logic input for U-phase low-side gate driver
4 COM1 U-phase logic ground
5 HIN1 Logic input for U-phase high-side gate driver
6 VCC1 U-phase logic supply voltage input
7 VB1 U-phase high-side floating supply voltage input
8 HS1 U-phase high-side floating supply ground
9 FO2 V-phase fault signal output and shutdown signal input
10 OCP2 Input for V-phase overcurrent protection
11 LIN2 Logic input for V-phase low-side gate driver
12 COM2 V-phase logic ground
13 HIN2 Logic input for V-phase high-side gate driver
14 VCC2 V-phase logic supply voltage input
15 VB2 V-phase high-side floating supply voltage input
16 HS2 V-phase high-side floating supply ground
17 FO3 W-phase fault signal output and shutdown signal input
18 OCP3 Input for W-phase overcurrent protection
19 LIN3 Logic input for W-phase low-side gate driver
20 COM3 W-phase logic ground
21 HIN3 Logic input for W-phase high-side gate driver
22 VCC3 W-phase logic supply voltage input
23 VB3 W-phase high-side floating supply voltage input
24 HS3 W-phase high-side floating supply ground
25 VBB Positive DC bus supply voltage
26 W W-phase output
27 LS3 W-phase IGBT emitter
28 VBB (Pin trimmed) positive DC bus supply voltage
29 V V-phase output
30 LS2 V-phase IGBT emitter
31 VBB (Pin trimmed) positive DC bus supply voltage
32 U U-phase output
33 LS1 U-phase IGBT emitter

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SCM1200MF Series

9. Typical Applications
CR filters and Zener diodes should be added to your application as needed. This is to protect each pin against surge
voltages causing malfunctions, and to avoid the IC being used under the conditions exceeding the absolute maximum
ratings where critical damage is inevitable. Then, check all the pins thoroughly under actual operating conditions to
ensure that your application works flawlessly.

VCC VFO SCM1200MF Series

U1
RFO LS1
33
FO1
INT 1
CFO
2 OCP1
LIN1 3 LIN1
MIC1
CLIN1 4 COM1 U 32
HIN1 5 HIN1
6 VCC1
CHIN1
DZ
CVCC1 31
VB1 DBOOT1 RBOOT1
7
CBOOT1
8 HS1
CP1 LS2
30
FO2
9
10 OCP2
LIN2 11 LIN2
MIC2 V
CLIN2 12 COM2 29 M
HIN2 13 HIN2
14 VCC2
CHIN2
Controller

CVCC2 28
VB2 DBOOT2 RBOOT2
15
CBOOT2
16 HS2
CP2 LS3
27
FO3
17
18 OCP3
LIN3 19 LIN3
MIC3 W
CLIN3 20 COM3 26
HIN3 21 HIN3
22 VCC3
CHIN3
VDC
VBB
CVCC3 25
23
VB3 DBOOT3 RBOOT3
CBOOT3
24 HS3
CP3
RO3
A/D3 CS CDC
RO2
A/D2
RO1
A/D1
CO1 CO2 CO3
COM
DRS3 DRS2 DRS1 RS3 RS2 RS1

Figure 9-1. Typical Application Using Three Shunt Resistors

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SCM1200MF Series

VCC VFO
U1 SCM1200MF Series
RFO LS1
33
FO1
INT 1
CFO
2 OCP1
LIN1 3 LIN1
MIC1
CLIN1 4 COM1 U 32
HIN1 5 HIN1
6 VCC1
CHIN1
DZ
CVCC1 31
VB1 DBOOT1 RBOOT1
7
CBOOT1
8 HS1
CP1 LS2
30
FO2
9
10 OCP2
LIN2 11 LIN2
MIC2 V
CLIN2 12 COM2 29 M
HIN2 13 HIN2
14 VCC2
Controller

CHIN2

CVCC2 28
VB2 DBOOT2 RBOOT2
15
CBOOT2
16 HS2
CP2 LS3
27
FO3
17
18 OCP3
LIN3 19 LIN3
MIC3 W
CLIN3 20 COM3 26
HIN3 21 HIN3
22 VCC3
CHIN3
VDC
VBB
CVCC3 25
23
VB3 DBOOT3 RBOOT3
CBOOT3
24 HS3
CP3

CS CDC
RO
A/D
CO
COM
DRS RS

Figure 9-2. Typical Application Using a Single Shunt Resistor

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SCM1200MF Series

10. Physical Dimensions

10.1. Leadform 2552

0.5 0.5

C C

8xP5.1=40.8
(2.6)

4.4± 0.3
1.2± 0.2
+0.5
47±0.3 A 2 0
（Root of pin）
(5ﾟ)
MAX1.2

17.25± 0.5

12.25± 0.5
19±0.3

11.45±0.5
15.95± 0.5
φ3.2± 0.15

(5ﾟ)
B

43.3± 0.3 B
2.08±0.2
11.2± 0.5
5xP1.27=6.35 5xP1.27=6.35 5xP1.27=6.35

2.57 1.27 3.24 1.27

1.27 3.7 3.7 3.7

+0.2
-0.1
+0.2

D 0.6 -0.1
(2.6)

0.5
0.5 -0.1
+0.2

+0.2
D 2
-0.1

C-C B-B
0.5 -0.1
+0.2
+0.2
0.5 -0.1

+0.2
0.7 -0.1 +0.2
1.2
-0.1

D-D
(11.6)

A-A
(38.6)

Unit: mm

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SCM1200MF Series

10.2. Leadform 2557 (Long Lead Type)

0.6 0.6
(0.65)

C C
(2.6)

8xP5.1=40.8
4.4±0.3
1.2± 0.2
+0.2
2 0
47±0.3 A
（ Root of pin）

)
( 11°

MAX1.2
A

17.25± 0.6

12.25±0.6
19± 0.3

11.45±0.6
15.95± 0.6

0 to 0.5
Φ 3.2±0.15

B
2.08±0.2
43.3± 0.3 (12°)

0 to 0.5
B

5xP1.27=6.35 5xP1.27=6.35 5xP1.27=6.35

14 to 14.8
2.57 1.27 3.24 1.27

1.27 3.7 3.7 3.7

D
+0.2
0.5 -0.1
+0.2

0.6 -0.1
(2.6)

0.5 -0.1
+0.2

+0.2
D 2
-0.1

C-C B-B
+0.2
0.5 -0.1
0.5 -0.1
+0.2

+0.2
0.7 -0.1 +0.2
1.2
-0.1
(11.5)

(38.5)
A-A D-D

Unit: mm

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SCM1200MF Series

10.3. Reference PCB Hole Sizes

φ1.1 φ1.4

Pins 1 to 24 Pins 25 to 33

11. Marking Diagram

25 33

Branding Area
24
1

25 33

SCM12xxMF YMDD Control Number

JAPAN

Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
24 M is the month of the year (1 to 9, O, N, or D)
1
DD is the day of the month (01 to 31)

Part Number

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SCM1200MF Series

12. Functional Descriptions Voltages across the VBx and HSx pins should be
maintained within the recommended range (i.e., the
All the characteristic values given in this section are Logic Supply Voltage, VBS) given in Section 2.
typical values, unless they are specified as minimum or In each phase, a bootstrap capacitor, CBOOTx, should
maximum. be connected between the VBx and HSx pins.
For pin descriptions, this section employs a notation For proper startup, turn on the low-side transistor first,
system that denotes a pin name with the arbitrary letter then fully charge the bootstrap capacitor, CBOOTx.
“x”, depending on context. The U-, V-, and W-phases For capacitance of the bootstrap capacitors, CBOOTx,
are represented as the pin numbers 1, 2, and 3, choose the values that satisfy Equations (1) and (2).
respectively. Thus, “the VBx pin” is used when referring Note that capacitance tolerance and DC bias
to any or all of the VB1, VB2, or VB3 pin. Also, when characteristics must be taken into account when you
different pin names are mentioned as a pair (e.g., “the choose appropriate values for CBOOTx.
VBx and HSx pins”), they are meant to be the pins in the
same phase. CBOOTx (μF) > 800 × t L(OFF) (s) (1)

12.1. Turning On and Off the IC 10 μF ≤ CBOOTx ≤ 220 μF (2)

The procedures listed below provide recommended
startup and shutdown sequences. In Equation (1), let tL(OFF) be the maximum off-time of
To turn on the IC properly, do not apply any voltage the low-side transistor (i.e., the non-charging time of
on the VBB, HINx, and LINx pins until the VCCx pin CBOOTx), measured in seconds.
voltage has reached a stable state (VCC(ON) ≥ 12.5 V). It Even while the high-side transistor is off, voltage
is required to fully charge bootstrap capacitors, CBOOTx, across the bootstrap capacitor keeps decreasing due to
at startup (see Section 12.2.2). power dissipation in the IC. When the VBx pin voltage
To turn off the IC, set the HINx and LINx pins to decreases to VBS(OFF) or less, the high-side undervoltage
logic low (or “L”), and then decrease the VCCx pin lockout (UVLO_VB) starts operating (see Section
voltage. 12.3.3.1). Therefore, actual board checking should be
done thoroughly to validate that voltage across the VBx
pin maintains over 12.0 V (VBS > VBS(OFF)) during a
low-frequency operation such as a startup period.
12.2. Pin Descriptions
As Figure 12-1 shows, a bootstrap diode, DBOOTx, and
a current-limiting resistor, RBOOTx, are internally placed
in series between the VCCx and VBx pins.
12.2.1. U, V, and W Time constant for the charging time of CBOOTx, τ, can
These pins are the outputs of the three phases, and be computed by Equation (3):
serve as the connection terminals to the 3-phase motor.
The U, V, and W pins are internally connected to the τ = CBOOTx × R BOOTx , (3)
HS1, HS2, and HS3 pins, respectively.
where CBOOTx is the optimized capacitance of the
bootstrap capacitor, and RBOOTx is the resistance of the
12.2.2. VBB current-limiting resistor (22 Ω ± 20%).

This is the input pin for the main supply voltage, i.e., U1 VB1
7
the positive DC bus. All of the IGBT collectors of the CP
CBOOT1
high-side are connected to this pin. DBOOT1 RBOOT1 HS1
8
Voltages between the VBB and COMx pins should be 31
set within the recommended range of the main supply VBB
VCC HO
6
voltage, VDC, given in Section 2. VCC1
To suppress surge voltages, put a 0.01 μF to 0.1 μF MIC1
32
bypass capacitor, CS, near the VBB pin and an 4 U Motor
COM1
electrolytic capacitor, CDC, with a minimal length of LO CDC VDC
PCB traces to the VBB pin.
LS1
33
RS1

12.2.3. VB1, VB2, and VB3 Figure 12-1. Bootstrap Circuit

These are the inputs of the high-side floating power
supplies for the individual phases. Figure 12-2 shows an internal level-shifting circuit. A

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high-side output signal, HOx, is generated accroding to 12.2.4. HS1, HS2, and HS3
an input signal, on the HINx pin. When an input signal
on the HINx pin transits from low to high (rising edge), These pins are the grounds of the high-side floating
a “Set” signal is generated. When the HINx input power supplies for each phase, and are connected to the
singnal transits from high to low (falling edge), a “Reset” negative nodes of bootstrap capacitors, CBOOTx.
signal is generated. These two signals are then The HS1, HS2, and HS3 pins are internally connected
transmitted to the high-side by the level-shifting circuit to the U, V, and W pins, respectively.
and are input to the SR flip-flop circuit. Finally, the SR
flip-flop circuit feeds an output signal, Q (i.e., HOx).
Figure 12-3 is a timing diagram describing how noise 12.2.5. VCC1, VCC2, and VCC3
or other detrimental effects will improperly influence the
These are the logic supply pins for the built-in control
level-shifting process. When a noise-induced rapid
MICs. The VCC1, VCC2, and VCC3 pins must be
voltage drop between the VBx and HSx pins
externally connected on a PCB because they are not
(“VBx–HSx”) occurs after the Set signal generation, the
internally connected. To prevent malfunction induced by
next Reset signal cannot be sent to the SR flip-flop
supply ripples or other factors, put a 0.01 µF to 0.1 μF
circuit. And the state of an HOx signal stays logic high
ceramic capacitor, CVCCx, near these pins. To prevent
(or “H”) because the SR flip-flop does not respond. With
damage caused by surge voltages, put an 18 V to 20 V
the HOx state being held high (i.e., the high-side
Zener diode, DZ, between the VCCx and COMx pins.
transistor is in an on-state), the next LINx signal turns
Voltages to be applied between the VCCx and COMx
on the low-side transistor and causes a
pins should be regulated within the recommended
simultaneously-on condition which may result in critical
operational range of VCC, given in Section 2.
damage to the IC. To protect the VBx pin against such a
noise effect, add a bootstrap capacitor, CBOOTx, in each
phase. CBOOTx must be placed near the IC and be
connected between the VBx and HSx pins with a 12.2.6. COM1, COM2, and COM3
minimal length of traces. To use an electrolytic capacitor, These are the logic ground pins for the built-in control
add a 0.01 µF to 0.1 µF bypass capacitor, CPx, in parallel MICs. For proper control, the control parts in each phase
near these pins used for the same phase. must be connected to the corresponding ground pin. The
COM1, COM2, and COM3 pins should be connected
U1 VBx externally on a PCB because they are not internally
connected. Varying electric potential of the logic ground
can be a cause of improper operations. Therefore,
S Q HOx
connect the logic ground as close and short as possible
R
Set to shunt resistors, RSx, at a single-point ground (or star
HINx
Input Pulse HSx ground) which is separated from the power ground (see
logic generator Reset
Figure 12-4).
COMx Moreover, extreme care should be taken when wiring
so that currents from the power ground do not affect the
Figure 12-2. Internal Level-shifting Circuit COMx pin.

U1
VDC
HINx VBB 25
CS
0
4 COM1
Set CDC

0 12 COM2 RS1
LS1 33
RS2
Reset LS2 30
20 COM3
0 RS3
LS3 27

VBx–HSx VBS(ON) VBS(OFF)

Create a single-point ground
0 (a star ground) near RSx, but
Stays logic high
Q Connect the COM1, OCP3 keep it separated from the
COM2, and COM3 OCP2 power ground.
0
pins on a PCB. OCP1

Figure 12-3. Waveforms at VBx–HSx Voltage Drop

Figure 12-4. Connections to Logic Ground

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SCM1200MF Series

12.2.7. HIN1, HIN2, and HIN3; U1 5V

LIN1, LIN2, and LIN3
These are the input pins of the internal motor drivers
2 kΩ
for each phase. The HINx pin acts as a high-side HINx
controller; the LINx pin acts as a low-side controller. (LINx)
Figure 12-5 shows an internal circuit diagram of the 22 kΩ
HINx or LINx pin. This is a CMOS Schmitt trigger
circuit with a built-in 22 kΩ pull-down resistor, and its COMx
input logic is active high. Input signals applied across
the HINx–COMx and the LINx–COMx pins in each
phase should be set within the ranges provided in Table
Figure 12-5. Internal Circuit Diagram of HINx or
12-1, below. Note that dead time setting must be done
LINx Pin
for HINx and LINx signals because the IC does not have
a dead time generator.
The higher PWM carrier frequency rises, the more U1
switching loss increases. Hence, the PWM carrier RIN1x
Input
frequency must be set so that operational case signal HINx
temperatures and junction temperatures have sufficient (LINx)
margins against the absolute maximum ranges, specified RIN2x CINx
in Section 1.
If the signals from the microcontroller become Controller SCM1200MF
unstable, the IC may result in malfunctions. To avoid
this event, the outputs from the microcontroller output Figure 12-6. Filter Circuit for HINx or LINx Pin
line should not be high impedance.
Also, if the traces from the microcontroller to the
HINx or LINx pin (or both) are too long, the traces may 12.2.8. LS1, LS2, and LS3
be interfered by noise. Therefore, it is recommended to
add an additional filter or a pull-down resistor near the These are the emitter pins of the low-side IGBTs. For
HINx or LINx pin as needed (see Figure 12-6). current detection, the LS1, LS2, and LS3 pins should be
Here are filter circuit constants for reference: connected externally on a PCB via shunt resistors, RSx,
- RIN1x: 33 Ω to 100 Ω to the COMx pins.
- RIN2x: 1 kΩ to 10 kΩ When connecting a shunt resistor, place it as near as
- CINx: 100 pF to 1000 pF possible to the IC with a minimum length of traces to the
LSx and COMx pins. Otherwise, malfunction may occur
Care should be taken in adding RIN1x and RIN2x to the because a longer circuit trace increases its inductance
traces. When they are connected to each other, the input and thus increases its susceptibility to improper
voltage of the HINx and LINx pins becomes slightly operations. In applications where long PCB traces are
lower than the output voltage of the microcontroller. required, add a fast recovery diode, DRSx, between the
LSx and COMx pins in order to prevent the IC from
malfunctioning.
Table 12-1. Input Signals for HINx and LINx Pins
U1
Parameter High Level Signal Low Level Signal VBB 25 VDC
Input Voltage 3 V < VIN < 5.5 V 0 V < VIN < 0.5 V CS

Input Pulse DRS1

≥0.5 μs ≥0.5 μs
Width 4 COM1 RS1 CDC
LS1 33
PWM Carrier DRS2
≤20 kHz
Frequency 12 COM2 RS2
LS2 30
Dead Time ≥1.5 μs DRS3
20 COM3
RS3
LS3 27

Put a shunt resistor near

Add a fast recovery diode to the IC with a minimum
a long trace. length to the LSx pin.

Figure 12-7. Connections to LSx Pin

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SCM1200MF Series

12.2.9. OCP1, OCP2, and OCP3 VFO

U1 5V
RFO
These pins serve as the inputs of the overcurrent 1 MΩ 3.0 µs (typ.)
FOx 2 kΩ
protection (OCP) for monitoring the currents going Blanking
INT filter
through the output transistors.
Section 12.3.4 provides further information about the 50 Ω
CFO Output SW turn-off
OCP circuit configuration and its mechanism. QFO

COMx

12.2.10. FO1, FO2, and FO3

These pins operate as the fault signal outputs and Figure 12-8. Internal Circuit Diagram of FOx Pin and
shutdown signal inputs for each phase. Sections 12.3.1 Its Peripheral Circuit
and 12.3.2 explain the two functions in detail,
respectively. QFO
Figure 12-8 illustrates an internal circuit diagram of ON

the FOx pin and its peripheral circuit. Because of its

open-drain nature, each of the FOx pins should be tied
by a pull-up resistor, RFO, to the external power supply. FOx Pin
Voltage tD(FO)
The external power supply voltage (i.e., the FO Pin
Pull-up Voltage, VFO) should range from 3.0 V to 5.5 V. VIL
Figure 12-10 shows a relation between the FOx pin 0

voltage and the pull-up resistor, RFO. When the pull-up

resistor, RFO, has a too small resistance, the FOx pin Figure 12-9. FOx Pin Delay Time, tD(FO)
voltage at fault signal output becomes high due to the
on-resistance of a built-in MOSFET, QFO (Figure 12-8). TJ = 25 °C
Therefore, it is recommended to use a 1 kΩ to 22 kΩ 0.5
Max.
Fault Signal Voltage (V)

pull-up resistor when the Low Level Input Threshold

Voltage of the microcontroller, VIL, is set to 1.0 V. 0.4 Typ.
To suppress noise, add a filter capacitor, CFO, near the Min.
0.3
IC with minimizing a trace length between the FOx and
COMx pins. Note that, however, this additional filtering 0.2
allows a delay time, tD(FO), to occur, as seen in Figure
12-9. The delay time, tD(FO), is a period of time which 0.1
starts when the IC receives a fault flag turning on the
internal MOSFET, QFO, and continues until when the 0
0 2 4 6 8 10
FOx pin reaches its threshold voltage (VIL) of 1.0 V or
below (put simply, until the time when the IC detects a RFO (kΩ)
logic low state, “L”).
Figure 12-11 shows how the delay time, tD(FO), and the Figure 12-10. Fault Signal Voltage vs.
noise filter capacitor, CFO, are related. Pull-up Resistor, RFO
For avoiding repeated OCP activations, the external
microcontroller must shut off any input signals to the IC TJ = 25 °C
within an OCP hold time, tP, after the internal MOSFET 15
(QFO) turn-on. tP is 15 μs where minimum values of Max.
Delay Time, tD(FO) (µs)

thermal characteristics are taken into account. (For more

details, see Section 12.3.4.) 10
When VIL is set to 1.0 V, it is recommended to use a
0.001 μF to 0.01 μF noise filter capacitor, CFO, allowing Typ.
a sufficient margin to deal with variations in 5 Min.
characteristics.
0
0.000 0.005 0.010 0.015 0.020 0.025
CFO (µF)

Figure 12-11. Delay Time, tD(FO) vs. Filter Capacitor,

CFO

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SCM1200MF Series

12.3. Protection Functions Table 12-2. Shutdown Signals

This section describes the various protection circuits Parameter High Level Signal Low Level Signal
provided in the SCM1200MF series. The protection Input
circuits include the undervoltage lockout for power 3 V < VIN < 5.5 V 0 V < VIN < 0.5 V
Voltage
supplies (UVLO), the simultaneous on-state prevention, Input Pulse
the overcurrent protection (OCP), and the thermal ≥3.0 μs ≥3.0 μs
Width
shutdown (TSD). In case one or more of these protection
circuits are activated, the FOx pin outputs a fault signal;
In Figure 12-12, FO1, FO2 and FO3 are all connected.
as a result, the external microcontroller can stop the
If an abnormal condition is detected by any one of the
operations of the three phases by receiving the fault
MICs, the high- and low-side transistors of all phases
signal. The external microcontroller can also shut down
turn off at once.
IC operations by inputting a fault signal to the FOx pin.
In the following functional descriptions, “HOx” denotes
a gate input signal on the high-side transistor, whereas U1
INT FO1
“LOx” denotes a gate input signal on the low-side 1
transistor (see also the diagrams in Section 7).
RFO
“VBx–HSx” refers to the voltages between the VBx and 9 FO2
HSx pins.
CFO 17
FO3
VFO
12.3.1. Fault Signal Output
In case one or more of the following protections are 4, 12, 20 COM
actuated, an internal MOSFET, QFO, turns on, then the
FOx pin becomes logic low (≤0.5 V). Figure 12-12. All-phase Shutdown Circuit
1) Low-side undervoltage lockout (UVLO_VCC)
2) Overcurrent protection (OCP)
3) Simultaneous on-state prevention 12.3.3. Undervoltage Lockout for Power
4) Thermal shutdown (TSD) Supply (UVLO)
While the FOx pin is in the low state, the high- and In case the gate-driving voltages of the output
low-side transistors of each phase turn off. In normal transistors decrease, their steady-state power dissipations
operation, the FOx pin outputs a high signal of 5 V. increase. This overheating condition may cause
The fault signal output time of the FOx pin at OCP permanent damage to the IC in the worst case. To
activation is the OCP hold time (tP) of 26 μs (typ.), fixed prevent this event, the SCM1200MF series has the
by a built-in feature of the IC itself (see Section 12.3.4). undervoltage lockout (UVLO) circuits for both of the
The external microcontroller receives the fault signals high- and low-side power supplies.
with its interrupt pin (INT), and must be programmed to
put the HINx and LINx pins to logic low within the
predetermined OCP hold time, tP.
12.3.3.1. Undervoltage Lockout for
High-side Power Supply
12.3.2. Shutdown Signal Input (UVLO_VB)
The FOx pin also acts as the input pin of shutdown Figure 12-13 shows operational waveforms of the
signals. When the FOx pin becomes logic low, the high- undervoltage lockout for high-side power supply (i.e.,
and low-side transistors of each phase turn off. The UVLO_VB).
voltages and pulse widths of the shutdown signals to be When the voltage between the VBx and HSx pins
applied between the FOx and COMx pins are listed in (VBx–HSx) decreases to the Logic Operation Stop
Table 12-2. Voltage (VBS(OFF) = 11.0 V) or less, the UVLO_VB
circuit in the corresponding phase gets activated and sets
only an HOx signal to logic low. When the voltage
between the VBx and HSx pins increases to the Logic
Operation Start Voltage (VBS(ON) = 11.5 V) or more, the
IC releases the UVLO_VB operation. Then, the HOx
signal becomes logic high at the rising edge of the first
input command after the UVLO_VB release.
Any fault signals are not output from the FOx pin

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SCM1200MF Series

during the UVLO_VB operation. In addition, the VBx

pin has an internal UVLO_VB filter of about 3 μs, in HINx

order to prevent noise-induced malfunctions. 0

LINx
HINx
0
0 UVLO_VCC
operation
LINx VCCx
VCC(ON)
VCC(OFF)
0
UVLO_VB
VBx-HSx operation 0

VBS(OFF) VBS(ON) HOx

UVLO release
0 0
HOx restarts at
positive edge after About 3 µs LOx responds to input signal.
About 3 µs UVLO_VB release. LOx
HOx

0
0

LOx FOx

0
0

FOx No FOx output at UVLO_VB

Figure 12-14. UVLO_VCC Operational Waveforms
0

Figure 12-13. UVLO_VB Operational Waveforms

12.3.4. Overcurrent Protection (OCP)
Figure 12-15 is an internal circuit diagram describing
the OCPx pin and its peripheral circuit.
12.3.3.2. Undervoltage Lockout for The OCPx pin detects overcurrents with voltage
Low-side Power Supply across external shunt resistors, RSx. Becuase the OCPx
pin is internally pulled down, the OCPx pin voltage
(UVLO_VCC) increases proportionally to a rise in the currents running
Figure 12-14 shows operational waveforms of the through the shunt resistors, RSx.
undervoltage lockout for low-side power supply (i.e., Figure 12-16 is a timing chart that represents
UVLO_VCC). operation waveforms during OCP operation. When the
When the VCCx pin voltage decreases to the Logic OCPx pin voltage increases to the OCP Threshold
Operation Stop Voltage (VCC(OFF) = 11.0 V) or less, the Voltage (VTRIP = 0.50 V) or more, and remains in this
UVLO_VCC circuit in the corresponding phase gets condition for a period of the OCP Blanking Time
activated and sets both of HOx and LOx signals to logic (tBK = 1.65 μs or tBK = 0.54 μs) or longer, the OCPx
low. When the VCCx pin voltage increases to the Logic circuit is activated. The enabled OCPx circuit shuts off
Operation Start Voltage (VCC(ON) = 11.5 V) or more, the the output transistors and puts the FOx pin into a low
IC releases the UVLO_VCC operation. Then it resumes state. Then, output current decreases as a result of the
transmitting the HOx and LOx signals according to input output transistors turn-off. Even if the OCPx pin voltage
commands on the HINx and LINx pins. falls below VTRIP, the IC holds the FOx pin in the low
During the UVLO_VCC operation, the FOx pin state for a fixed OCP hold time (tP) of 26 μs (typ.). Then,
becomes logic low and sends fault signals. In addition, the output transistors operate according to input signals.
the VCCx pin has an internal UVLO_VCC filter of The OCP is used for detecting abnormal conditions,
about 3 μs, in order to prevent noise-induced such as an output transistor shorted. In case short-circuit
malfunctions. conditions occur repeatedly, the output transistors can be
destroyed. To prevent such event, motor operation must
be controlled by the external microcontroller so that it
can immediately stop the motor when fault signals are
detected.
Care should also be taken in using a 3-shunt resistor
system in your application. The IC running on the
3-shunt resistor system only shuts off the output
transistor in the phase where an overcurrent condition

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SCM1200MF Series

exists. And a fault signal is transmitted from the FOx pin HINx

of the phase being under the overcurrent condition.

0
As already shown in Figure 12-12, if all of the FOx
LINx
pins being used makes a short circuit, a fault signal sent
from the corresponding phase can turn off the output 0
transistors of all phases (see Section 12.3.2). tDELAY 0.3 µs (typ.)
tBK tBK tBK
OCPx
For proper shunt resistor setting, your application
must meet the following: VTRIP

● Use the shunt resistor that has a recommended

0
resistance, RSx (see Section 2).
● Set the OCPx pin input voltage to vary within the HOx
HOx responds to input signal.

rated OCP pin voltages, VOCP (see Section 1).

● Keep the current through the output transistors below 0
LOx
the rated output current (pulse), IOP (see Section 1).
0
It is required to use a resistor with low internal FOx restarts
inductance because high-frequency switching current FOx automatically after t P.
will flow through the shunt resistors, RSx. In addition, tP

choose a resistor with allowable power dissipation 0

according to your application.

When you connect a CR filter (i.e., a pair of a filter Figure 12-16. OCP Operational Waveforms
resistor, RO, and a filter capacitor, CO) to the OCPx pin,
care should be taken in setting the time constants of RO
and CO. The larger the time constant, the longer the time Table 12-3. Reference Time Constants for CR Filter
that the OCPx pin voltage rises to VTRIP. And this may Time Constant
cause permanent damage to the transistors. Part Number
(µs)
Consequently, a propagation delay of the IC must be SCM1242MF
taken into account when you determine the time SCM1256MF
≤0.22
constants. For RO and CO, their time constants must be SCM1260MF ≤1
set to the values listed in Table 12-3.
The filter capacitor, CO, should also be placed near the
IC, between the OCPx and COMx pins with a minimal
length of traces.
Note that overcurrents are undetectable when one or
more of the U, V, and W pins or their traces are shorted
to ground (ground fault). In case any of these pins falls
into a state of ground fault, the output transistors may be
destroyed.

U1 VTRIP VBB
-
OCPx
+

200 kΩ Blanking
filter
1.65 µs (typ.)
COx
Output SW turn-off
and QFO turn-on
COMx

LSx
A/D

ROx DRSx RSx

COM

Figure 12-15. Internal Circuit Diagram of OCPx Pin

and Its Peripheral Circuit

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SCM1200MF Series

12.3.5. Simultaneous On-state Prevention (see Section 7).

When the temperature of any one of the MICs
In case both of the HINx and LINx pins receive logic exceeds the TSD Operating Temperature (TDH = 150 °C),
high signals at once, the high- and low-side transistors the corresponding TSD circuit is activated. When the
turn on at the same time, causing overcurrents to pass temperature of any one of the MICs decreases to the
through. As a result, the switching transistors will be TSD Releasing Temperature (TDL = 120 °C) or less, the
destroyed. To prevent this event, the simultaneous shutdown condition is released. The transistors then
on-state prevention circuit is built into each of the MICs. resume operating according to input signals.
Note that incorrect command input and noise During the TSD operation, the FOx pin becomes logic
interference are also largely responsible for such a low and transmits fault signals.
simultaneous-on condition. Note that junction temperatures of the output
When logic high signals are asserted on the HINx and transistors themselves are not monitored; Therefore, do
LINx pins at once, as in Figure 12-17, this function gets not use the TSD function as an overtemperature
activated and turns the high- and low-side transistors off. prevention for the output transistors.
Then, while the function is being enabled, the FOx pin
becomes logic low and sends fault signals. After the IC
comes out of the simultaneous on-state condition, HINx
"HOx" and "LOx" start responding in accordance with
HINx and LINx input commands again. 0

To prevent noise-induced malfunctions, the LINx

simultaneous on-state prevention circuit has a filter of
about 0.8 μs. 0
TSD operation
Note that the function does not have any of dead-time
TJ(MIC) TDH
programming circuits. Therefore, input signals to the
HINx and LIN pins must have proper dead times as TDL
defined in Section 12.2.7. 0 HOx responds to input
signal.
Simultaneous on-state HOx
prevention enabled
HINx 0
LOx
0

0
LINx
FOx
0
About 0.8 µs 0
HOx

0 Figure 12-18. TSD Operational Waveforms

About 0.8 µs
LOx

0
FOx

Figure 12-17. Operational Waveforms of

Simultaneous On-state Prevention

12.3.6. Thermal Shutdown (TSD)

The SCM1200MF series incorporates a thermal
shutdown (TSD) circuit in each phase. Figure 12-18
shows TSD operational waveforms.
In case of overheating (e.g., increased power
dissipation due to overload, or elevated ambient
temperature at the device), the IC shuts down the high-
and low-side output transistors.
The TSD circuit in each MICs monitors temperatures

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SCM1200MF Series

13. Design Notes ● When mounting a heatsink, it is recommended to use

silicone greases. If a thermally conductive sheet or an
This section also employs the notation system electrically insulating sheet is used, package cracks
described in the beginning of the previous section. may be occurred due to creases at screw tightening.
Therefore, you should conduct thorough evaluations
before using these materials.
13.1. PCB Pattern Layout ● When applying a silicone grease, make sure that there
are no foreign substances between the IC and a
Figure 13-1 shows a schematic diagram of a motor
heatsink. Extreme care should be taken not to apply a
drive circuit. The circuit consists of current paths having
silicone grease onto any device pins as much as
high frequencies and high voltages, which also bring
possible. The following requirements must be met for
about negative influences on IC operation, noise
proper grease application:
interference, and power dissipation.
− Grease thickness: 100 µm
Therefore, PCB trace layouts and component
placements play an important role in circuit designing. − Heatsink flatness: ±100 µm
Current loops, which have high frequencies and high − Apply a silicone grease within the area indicated in
voltages, should be as small and wide as possible, in Figure 13-2, below.
order to maintain a low-impedance state.
Screw hole Screw hole
In addition, ground traces should be as wide and short
as possible so that radiated EMI levels can be reduced.

U1 5.8 Thermal silicone

VDC
VBB
25 5.8 M3 grease application area M3

Heatsink
MIC3 26 37.1
W
3.1 3.1
Unit: mm
Ground traces
27
LS3 should be wide
and short. Figure 13-2. Reference Application Area for Thermal
Silicone Grease
MIC2 29 M
V

30 13.3. Considerations in IC Characteristics

LS2
Measurement
When measuring the breakdown voltage or leakage
32
MIC1 U current of the transistors incorporated in the IC, note that
the gate and emitter of each transistor should have the
same potential.
33
LS1 High-frequency, high-voltage Moreover, care should be taken during the
current loops should be as measurement because the collectors of the high-side
small and wide as possible. transistors are all internally connected to the VBB pin..
The output (U, V, and W) pins are connected to the
Figure 13-1. High-frequency, High-voltage Current emitters of the corresponding high-side transistors,
Paths whereas the LSx pins are connected to the emitters of
the low-side transistors. The gates of the high-side
transistors are pulled down to the corresponding output
13.2. Considerations in Heatsink Mounting (U, V, and W) pins; similarly, the gates of the low-side
transistors are pulled down to the COMx pins.
The following are the key considerations and
Note that the output, LSx, and COMx pins must be
guidelines for mounting a heatsink:
connected appropriately before measuring breakdown
● It is recommended to use a pair of a metric screw of voltage or leak current. Otherwise, the switching
M3 and a plain washer of 7 mm (φ). transistors may result in permanent damage.
To tighten the screws, use a torque screwdriver. The following are circuit diagrams representing
Tighten the two screws firstly up to about 30% of the typical measurement circuits for breakdown voltage:
maximum screw torque, then finally up to 100% of Figure 13-3 shows the high-side transistor (Q1H) in the
the prescribed maximum screw torque. Perform U-phase; Figure 13-4 shows the low-side transistor (Q1L)
appropriate tightening within the range of screw in the U-phase. And all the pins that are not represented
torque defined in Section 4. in these figures are open.

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Before conducting a measurement, be sure to isolate 14. Calculating Power Losses and
the ground of the to-be-measured phase from those of Estimating Junction Temperature
other two phases not to be measured. Then, in each of
the two phases, which are separated not to be measured, This section describes the procedures to calculate
connect the LSx and COMx pins each other at the same power losses in a switching transistor, and to estimate a
potential, and leave them unused and floated. junction temperature. Note that the descriptions listed
here are applicable to the SCM1200MF series, which is
U1
controlled by a 3-phase sine-wave PWM driving
VBB
strategy. Total power loss in an IGBT can be obtained
25
by taking the sum of steady-state loss, PON, and
Q1H switching loss, PSW. The following subsections contain
V the mathematical procedures to calculate the power
MIC1
4 COM1 U 32
losses in an IGBT and its junction temperature.
Q1L For quick and easy references, we offer calculation
LS1 support tools online. Please visit our website to find out
33
31
more.
Q2H ● DT0051: SCM1200MF Series Calculation Tool
V http://www.semicon.sanken-ele.co.jp/en/calc-tool/igbt1_caltool_en.html
MIC2 29
12 COM2

Q2L
LS2
30 14.1. IGBT Steady-state Loss, PON
Q3H Steady-state loss in an IGBT can be computed by
MIC3
using the VCE(SAT) vs. IC curves, listed in Section 15.3.1.
20 COM3
W
26
As expressed by the curves in Figure 14-1, linear
Q3L
approximations at a range the IC is actually used are
LS3
27
obtained by: VCE(SAT) = α × IC + β.
The values gained by the above calculation are then
applied as parameters in Equation (4), below. Hence, the
equation to obtain the IGBT steady-state loss, PON, is:
Figure 13-3. Typical Measurement Circuit for
High-side Transistor (Q1H) in U-phase 1 π
PON = ∫ V (φ) × IC (φ) × DT × dφ
2π 0 CE(SAT)
U1
VBB
25 1 1 4
= α( + M × cos θ) IM 2
Q1H 2 2 3π
√2 1 π (4)
4 COM1 MIC1 U 32
+ β ( + M × cos θ) IM .
π 2 8
Q1L V
LS1
33
31
Where:
Q2H VCE(SAT) is the collector-to-emitter saturation voltage of
V
12 COM2 MIC2 29 the IGBT (V),
IC is the collector current of the IGBT (A),
Q2L
DT is the duty cycle, which is given by
LS2
30

Q3H 1 + M × sin(φ + θ)
DT = ,
MIC3 W 2
20 COM3 26

Q3L M is the modulation index (0 to 1),

LS3
27
cosθ is the motor power factor (0 to 1),
IM is the effective motor current (A),
α is the slope of the linear approximation in the
VCE(SAT) vs. IC curve, and
Figure 13-4. Typical Measurement Circuit for β is the intercept of the linear approximation in the
Low-side Transistor (Q1L) in U-phase VCE(SAT) vs. IC curve.

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SCM1200MF Series

2.5 VCC=15V
25°C
2.0 y = 0.036x + 1.359
VCE(SAT) (V)

1.5

1.0
75°C
0.5 125°C
y = 0.108x + 0.831
0.0
0 1 2 3 4 5 6 7 8 9 10
IC (A)

Figure 14-1. Linear Approximate Equation of

VCE(SAT) vs. IC Curve

14.2. IGBT Switching Loss, PSW

Switching loss in an IGBT can be calculated by
Equation (5), letting IM be the effective current value of
the motor:

√2 VDC
PSW = × fC × αE × IM × . (5)
π 300

Where:
fC is the PWM carrier frequency (Hz),
VDC is the main power supply voltage (V), i.e., the
VBB pin input voltage, and
αE is the slope of the switching loss curve (see Section
0).

14.3. Estimating Junction Temperature of

IGBT
The junction temperature of an IGBT, TJ, can be
estimated with Equation (6):

TJ = R (J−C)Q × (PON + PSW ) + TC . (6)

Where:
R(J-C)Q is the junction-to-case thermal resistance
per IGBT (°C/W), and
TC is the case temperature (°C), measured at the point
defined in Figure 3-1.

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SCM1200MF Series

15. Performance Curves

15.1. Transient Thermal Resistance Curves

The following graphs represent transient thermal resistance (the ratios of transient thermal resistance), with
steady-state thermal resistance = 1.

15.1.1. SCM1261MF

1.00
Ratio of Transient Thermal Resistance

0.10

0.01
1 10 100 1000 10000
Time (ms)

15.1.2. SCM1242MF, SCM1263MF

1.00
Ratio of Transient Thermal Resistance

0.10

0.01
1 10 100 1000 10000

Time (ms)

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SCM1200MF Series

15.1.3. SCM1265MF

1.00
Ratio of Transient Thermal Resistance

0.10

0.01
1 10 100 1000 10000

Time (ms)

15.1.4. SCM1256MF

1.00
Ratio of Transient Thermal Resistance

0.10

0.01
1 10 100 1000 10000
Time (ms)

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SCM1200MF Series

15.2. Performance Curves of Control Parts

Figure 15-1 to Figure 15-27 provide performance curves of the control parts integrated in the SCM1200MF series,
including variety-dependent characteristics and thermal characteristics. TJ represents the junction temperature of the
control parts.

Table 15-1. Typical Characteristics of Control Parts

Figure Number Figure Caption
Figure 15-1 Logic Supply Current in 3-phase Operation, ICC vs. TC
Figure 15-2 Logic Supply Current in 3-phase Operation, ICC vs. VCCx Pin Voltage, VCC
Figure 15-3 Logic Supply Current in 1-phase Operation (HINx = 0 V), IBS vs. TC
Figure 15-4 Logic Supply Current in 1-phase Operation (HINx = 5 V), IBS vs. TC
Figure 15-5 Logic Supply Current in 1-phase Operation (HINx = 0 V), IBS vs. VBx Pin Voltage, VB
Figure 15-6 Logic Operation Start Voltage, VBS(ON) vs. TC
Figure 15-7 Logic Operation Stop Voltage, VBS(OFF) vs. TC
Figure 15-8 Logic Operation Start Voltage, VCC(ON) vs. TC
Figure 15-9 Logic Operation Stop Voltage, VCC(OFF) vs. TC
Figure 15-10 UVLO_VB Filtering Time vs. TC
Figure 15-11 UVLO_VCC Filtering Time vs. TC
Figure 15-12 Input Current at High Level (HINx or LINx), IIN vs. TC
Figure 15-13 High Level Input Signal Threshold Voltage, VIH vs. TC
Figure 15-14 Low Level Input Signal Threshold Voltage, VIL vs. TC
Figure 15-15 High-side Turn-on Propagation Delay vs. TC (from HINx to HOx)
Figure 15-16 High-side Turn-off Propagation Delay vs. TC (from HINx to HOx)
Figure 15-17 Low-side Turn-on Propagation Delay vs. TC (from LINx to LOx)
Figure 15-18 Low-side Turn-off Propagation Delay vs. TC (from LINx to LOx)
Figure 15-19 Minimum Transmittable Pulse Width for High-side Switching, tHIN(MIN) vs. TC
Figure 15-20 Minimum Transmittable Pulse Width for Low-side Switching, tLIN(MIN) vs. TC
Figure 15-21 Typical Output Pulse Widths, tHO, tLO vs. Input Pulse Widths, tHIN, tLIN
Figure 15-22 FOx Pin Voltage in Normal Operation, VFOL vs. TC
Figure 15-23 OCP Threshold Voltage, VTRIP vs. TC
Figure 15-24 Blanking Time, tBK + Propagation Delay, tD vs. TC (SCM124xMF)
Figure 15-25 Blanking Time, tBK + Propagation Delay, tD vs. TC (SCM126xMF)
Figure 15-26 OCP Hold Time, tP vs. TC
Figure 15-27 Filtering Time of Simultaneous On-state Prevention vs. TC

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SCM1200MF Series

VCC x= 15 V, HINx = 0 V, LINx = 0 V HIN x= 0 V, LINx = 0 V

5.0 4.0
4.5 Max. 3.5
4.0
3.0
3.5
Typ. 2.5
ICC (mA)

3.0

ICC (mA)
2.5 2.0 125°C
2.0 Min. 25°C
1.5
1.5 −30°C
1.0
1.0
0.5 0.5
0.0 0.0
-30 0 30 60 90 120 150 12 13 14 15 16 17 18 19 20
TC (°C) VCC (V)

Figure 15-1. Logic Supply Current in 3-phase Operation, Figure 15-2. Logic Supply Current in 3-phase Operation,
ICC vs. TC ICC vs. VCCx Pin Voltage, VCC

VBx = 15 V, HINx = 0 V VBx = 15 V, HINx = 5 V

250 250
Max.
200 Max. 200
Typ.
150 Typ. 150
IBS (µA)

IBS (µA)

Min. Min.
100 100

50 50

0 0
-30 0 30 60 90 120 150 -30 0 30 60 90 120 150
TC (°C) TC (°C)

Figure 15-3. Logic Supply Current in 1-phase Operation Figure 15-4. Logic Supply Current in 1-phase Operation
(HINx = 0 V), IBS vs. TC (HINx = 5 V), IBS vs. TC

12.50
VBx = 15 V
180 12.25
160
12.00
140
120 11.75
VBS(ON) (V)

Max.
IBS (µA)

100 11.50
80 125°C Typ.
11.25
60 25°C
11.00 Min.
40 −30°C
20 10.75
0 10.50
12 13 14 15 16 17 18 19 20 -30 0 30 60 90 120 150
VB (V) TC (°C)

Figure 15-5. Logic Supply Current in 1-phase Figure 15-6. Logic Operation Start Voltage, VBS(ON) vs.
Operation (HINx = 0 V), IBS vs. VBx Pin Voltage, VB TC

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12.0 12.50
11.8 12.25
11.6
12.00
11.4
11.75

VCC(ON) (V)
11.2 Max.
VBS(OFF) (V)

Max.
11.0 11.50
10.8 Typ. Typ.
11.25
10.6 Min. Min.
11.00
10.4
10.2 10.75
10.0 10.50
-30 0 30 60 90 120 150 -30 0 30 60 90 120 150
TC (°C) TC (°C)

Figure 15-7. Logic Operation Stop Voltage, VBS(OFF) vs. Figure 15-8. Logic Operation Start Voltage, VCC(ON) vs.
TC TC

12.0
5.0
11.8
4.5
UVLO_VB Filtering Time (µs)

11.6
4.0
11.4
VCC(OFF) (V)

3.5
11.2 Max.
Max. 3.0
11.0 2.5 Typ.
10.8 Typ. 2.0
10.6 1.5 Min.
Min.
10.4 1.0
10.2 0.5
10.0 0.0
-30 0 30 60 90 120 150 -30 0 30 60 90 120 150
TC (°C) TC (°C)

Figure 15-9. Logic Operation Stop Voltage, VCC(OFF) vs. Figure 15-10. UVLO_VB Filtering Time vs. TC
TC

INHx or INLx = 5 V
4.5 400
UVLO_VCC Filtering Time (µs)

4.0 350 Max.

3.5 Max. 300 Typ.
3.0
250
IIN (µA)

2.5 Typ. Min.

200
2.0
Min. 150
1.5
100
1.0
0.5 50
0.0 0
-30 0 30 60 90 120 150 -30 0 30 60 90 120 150
TC (°C) TC (°C)

Figure 15-11. UVLO_VCC Filtering Time vs. TC Figure 15-12. Input Current at High Level (HINx or
LINx), IIN vs. TC

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SCM1200MF Series

2.6 2.0
2.4
1.8
2.2
2.0 1.6
Max.
VIH (V)

VIL (V)
1.8 1.4 Max.
Typ.
1.6 Typ.
1.2
1.4 Min.
Min.
1.2 1.0

1.0 0.8
-30 0 30 60 90 120 150 -30 0 30 60 90 120 150
TC (°C) TC (°C)

Figure 15-13. High Level Input Signal Threshold Figure 15-14. Low Level Input Signal Threshold
Voltage, VIH vs. TC Voltage, VIL vs. TC

600 800
High-side Turn-on Propagation

High-side Turn-off Propagation

500 700
600 Max.
Max.
400
500
Delay (ns)

Delay (ns)

Typ. Typ.
300 400
Min. Min.
300
200
200
100 100
0 0
-30 0 30 60 90 120 150 -30 0 30 60 90 120 150
TC (°C) TC (°C)

Figure 15-15. High-side Turn-on Propagation Delay vs. Figure 15-16. High-side Turn-off Propagation Delay vs.
TC (from HINx to HOx) TC (from HINx to HOx)

600
Low-side Turn-on Propagation

800
Low-side Turn-off Propagation

500 700
600 Max.
Delay (ns)

400 Max.
Delay (ns)

500
Typ.
300 Typ. 400
Min. 300 Min.
200
200
100 100
0 0
-30 0 30 60 90 120 150 -30 0 30 60 90 120 150
TC (°C) TC (°C)

Figure 15-17. Low-side Turn-on Propagation Delay vs. Figure 15-18. Low-side Turn-off Propagation Delay vs.
TC (from LINx to LOx) TC (from LINx to LOx)

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500 500
450 450
400 400
350 350

tLIN(MIN) (ns)
tHIN(MIN) (ns)

300 300
Max. Max.
250 250
200 Typ. 200 Typ.
150 Min. 150 Min.
100 100
50 50
0 0
-30 0 30 60 90 120 150 -30 0 30 60 90 120 150
TC (°C) TC (°C)

Figure 15-19. Minimum Transmittable Pulse Width for Figure 15-20. Minimum Transmittable Pulse Width for
High-side Switching, tHIN(MIN) vs. TC Low-side Switching, tLIN(MIN) vs. TC

TC = 25 °C, VCCx = 15 V FOx pull-up voltage = 5 V, RFO = 3.3 kΩ, FOx in logic low
1400 300

1200 High side

250
Low side
1000 200
tHO, tLO(typ.) (ns)

Max.
VFOL (mV)

800
150 Typ.
600 Min.
100
400
200 50

0 0
0 200 400 600 800 1000 1200 -30 0 30 60 90 120 150
tHIN, tLIN (ns) TC (°C)

Figure 15-21. Typical Output Pulse Widths, tHO, tLO vs. Figure 15-22. FOx Pin Voltage in Normal Operation,
Input Pulse Widths, tHIN, tLIN VFOL vs. TC

540 4.0
530 3.5
3.0
tBK + tD (µs)

520 Max.
VTRIP (mV)

510 2.5
2.0 Max.
500 Typ.
1.5 Typ.
490
Min. 1.0 Min.
480
0.5
470
0.0
460 -30 0 30 60 90 120 150
-30 0 30 60 90 120 150 TC (°C)
TC (°C)

Figure 15-23. OCP Threshold Voltage, VTRIP vs. TC Figure 15-24. Blanking Time, tBK + Propagation Delay,
tD vs. TC (SCM124xMF)

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SCM1200MF Series

1.4 50
1.2 45
40
tBK + tD (µs)

1.0 35
Max. Max.
0.8 30

tP (µs)
Typ. 25
0.6 Typ.
Min. 20
0.4 15 Min.

0.2 10
5
0.0 0
-30 0 30 60 90 120 150 -30 0 30 60 90 120 150
TC (°C)
TC (°C)

Figure 15-25. Blanking Time, tBK + Propagation Delay, Figure 15-26. OCP Hold Time, tP vs. TC
tD vs. TC (SCM126xMF)

1.4
Filtering Time of Simultaneous

1.2
On-state Prevention (µs)

1.0 Max.

0.8
Typ.
0.6
Min.
0.4

0.2

0.0
-30 0 30 60 90 120 150
TC (°C)

Figure 15-27. Filtering Time of Simultaneous On-state

Prevention vs. TC

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SCM1200MF Series

15.3. Performance Curves of Output Parts

15.3.1. Output Transistor Performance Curves

15.3.1.1. SCM1261M

VCCx = 15 V 2.5
2.5

2.0 2.0

25°C
VCE(SAT) (V)

1.5 1.5

VF (V)
1.0 1.0
25°C
75°C
0.5 0.5
125°C 75°C
125°C
0.0 0.0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
IC (A) IF (A)

Figure 15-28. IGBT VCE(SAT) vs. IC Figure 15-29. Freewheeling Diode VF vs. IF

15.3.1.2. SCM1242MF, SCM1263MF

VCCx = 15 V
2.5 2.5

2.0 2.0
25°C
25°C
VCE(SAT) (V)

VF (V)

1.5 1.5

1.0 1.0
75°C
0.5 0.5 75°C
125°C 125°C
0.0 0.0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
IC (A) IF (A)

Figure 15-30. IGBT VCE(SAT) vs. IC Figure 15-31. Freewheeling Diode VF vs. IF

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SCM1200MF Series

15.3.1.3. SCM1265MF

VCCx = 15 V 2.5
2.5

2.0 2.0
25°C
VCE(SAT) (V)

1.5 25°C 1.5

VF (V)
1.0
1.0

0.5 75°C
0.5 75°C
125°C
125°C
0.0
0.0 0 2 4 6 8 10 12 14 16 18 20
0 2 4 6 8 10 12 14 16 18 20
IF (A)
IC (A)

Figure 15-32. IGBT VCE(SAT) vs. IC Figure 15-33. Freewheeling Diode VF vs. IF

15.3.1.4. SCM1256MF

VCCx = 15 V
2.5
2.5

2.0 2.0
25°C 25°C
1.5
VCE(SAT) (V)

1.5
VF (V)

1.0 1.0

75°C 0.5 75°C

0.5
125°C
125°C
0.0
0.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
IF (A)
IC (A)

Figure 15-34. IGBT VCE(SAT) vs. IC Figure 15-35. Freewheeling Diode VF vs. IF

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SCM1200MF Series

15.3.2. Switching Loss Curves

Conditions: VBB pin voltage = 300 V, half-bridge circuit with inductive load.

15.3.2.1. SCM1261MF

VBx = 15 V VCCx = 15 V
500 500

SCM1261MF

SCM1261MF
400 400
Turn-on
300 300
E (µJ)

E (µJ)
Turn-on
200 200

100 100 Turn-off

Turn-off
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
IC (A) IC (A)

Figure 15-36. High-side Switching Loss (TJ = 25 °C) Figure 15-37. Low-side Switching Loss (TJ = 25 °C)

VBx = 15 V VCCx = 15 V
500 500
SCM12161MF

SCM1261MF
400 400 Turn-on

300 300
E (µJ)

E (µJ)

200 200
Turn-on
Turn-off
100 100
Turn-off
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
IC (A) IC (A)

Figure 15-38. High-side Switching Loss (TJ = 125 °C) Figure 15-39. Low-side Switching Loss (TJ = 125 °C)

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SCM1200MF Series

15.3.2.2. SCM1242MF

VBx = 15 V VCCx = 15 V
800

SCM1242MF
800

SCM1242MF
700 700
600 600
Turn-off Turn-on
500 500

E (µJ)
E (µJ)

400 400
300 300
200 200 Turn-off
Turn-on
100 100
0 0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
IC (A) IC (A)

Figure 15-40 High-side Switching Loss (TJ = 25 °C) Figure 15-41. Low-side Switching Loss (TJ = 25 °C)

VBx = 15 V VCCx = 15 V
800 800
SCM1242MF

SCM1242MF
700 Turn-off 700 Turn-on
600 600
500 500
E (µJ)

E (µJ)

400 400
Turn-off
300 Turn-on 300
200 200
100 100
0 0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
IC (A) IC (A)

Figure 15-42. High-side Switching Loss (TJ = 125 °C) Figure 15-43. Low-side Switching Loss (TJ = 125 °C)

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SCM1200MF Series

15.3.2.3. SCM1263MF

VBx = 15 V VCCx = 15 V
700 700

SCM1263MF

SCM1263MF
600 600
Turn-on
500 Turn-off 500
400 400
E (µJ)

E (µJ)
300 300
200 Turn-on 200
Turn-off
100 100
0 0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
IC (A) IC (A)

Figure 15-44 High-side Switching Loss (TJ = 25 °C) Figure 15-45. Low-side Switching Loss (TJ = 25 °C)

VBx = 15 V VCCx = 15 V
700 700
SCM12163MF

SCM1263MF
600 600 Turn-on
Turn-off
500 500
400 400
E (µJ)

E (µJ)

300 300 Turn-off

Turn-on
200 200
100 100

0 0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
IC (A) IC (A)

Figure 15-46. High-side Switching Loss (TJ = 125 °C) Figure 15-47. Low-side Switching Loss (TJ = 125 °C)

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SCM1200MF Series

15.3.2.4. SCM1265MF

VBx = 15 V VCCx = 15 V
1200 1200

SCM1265MF

SCM1265MF
1000 1000
Turn-on
800 Turn-on 800
E (µJ)

600 600

E (µJ)
400 400

200 Turn-off 200 Turn-off

0 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
IC (A) IC (A)

Figure 15-48 High-side Switching Loss (TJ = 25 °C) Figure 15-49. Low-side Switching Loss (TJ = 25 °C)

VBx = 15 V VCCx = 15 V
1200 1200
SCM12165MF

SCM1265MF
1000 1000
Turn-on
800 800
E (µJ)

E (µJ)

600 600
Turn-on
400 400
Turn-off
200 200
Turn-off
0 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
IC (A) IC (A)

Figure 15-50. High-side Switching Loss (TJ = 125 °C) Figure 15-51. Low-side Switching Loss (TJ = 125 °C)

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SCM1200MF Series

15.3.2.5. SCM1256MF

VBx = 15 V VCCx = 15 V
1400 1400

SCM1256MF

SCM1256MF
1200 1200 Turn-off

1000 Turn-off 1000

800 800
E (µJ)

E (µJ)
600 600
Turn-on
400 400
Turn-on
200 200
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IC (A) IC (A)

Figure 15-52. High-side Switching Loss (TJ = 25 °C) Figure 15-53. Low-side Switching Loss (TJ = 25 °C)

VBx = 15 V VCCx = 15 V
1400 1800
SCM1256MF

SCM1256MF
1200 1600
Turn-off Turn-off
1400
1000
1200
800 1000
E (µJ)

E (µJ)

600 800
Turn-on
Turn-on 600
400
400
200 200
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IC (A) IC (A)

Figure 15-54. High-side Switching Loss (TJ = 125 °C) Figure 15-55. Low-side Switching Loss (TJ = 125 °C)

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SCM1200MF Series

15.4. Allowable Effective Current Curves

The following curves represent allowable effective currents in 3-phase sine-wave PWM driving with parameters such
as typical VCE(SAT) and typical switching losses.
Operating conditions: VBB pin input voltage, VDC = 300 V; VCCx pin input voltage, VCC = 15 V; modulation index,
M = 0.9; motor power factor, cosθ = 0.8; junction temperature, TJ = 150 °C.

15.4.1. SCM1261MF

fC = 2 kHz
10
Allowable Effective Current (Arms)

0
25 50 75 100 125 150
TC (°C)

Figure 15-56. Allowable Effective Current (fC = 2 kHz): 10 A Device

fC = 16 kHz
10
Allowable Effective Current (Arms)

0
25 50 75 100 125 150
TC (°C)

Figure 15-57. Allowable Effective Current (fC = 16 kHz): 10 A Device

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SCM1200MF Series

15.4.2. SCM1242MF, SCM1263MF

fC = 2 kHz
15
Allowable Effective Current (Arms)

10

0
25 50 75 100 125 150
TC (°C)

Figure 15-58. Allowable Effective Current (fC = 2 kHz): 15 A Devices

fC = 16 kHz
15
Allowable Effective Current (Arms)

10

0
25 50 75 100 125 150
TC (°C)

Figure 15-59. Allowable Effective Current (fC = 16 kHz): 15 A Devices

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SCM1200MF Series

15.4.3. SCM1265MF

fC = 2 kHz
20
Allowable Effective Current (Arms)

15

10

0
25 50 75 100 125 150
TC (°C)

Figure 15-60. Allowable Effective Current (fC = 2 kHz): 20 A Devices

fC = 16 kHz
20
Allowable Effective Current (Arms)

15

10

0
25 50 75 100 125 150
TC (°C)

Figure 15-61. Allowable Effective Current (fC = 16 kHz): 20 A Devices

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SCM1200MF Series

15.4.4. SCM1256MF

fC = 2 kHz
30
Allowable Effective Current (Arms)

25

20

15

10

0
25 50 75 100 125 150
TC (°C)

Figure 15-62. Allowable Effective Current (fC = 2 kHz): 30 A Devices

fC = 16 kHz
30
Allowable Effective Current (Arms)

25

20

15

10

0
25 50 75 100 125 150
TC (°C)

Figure 15-63. Allowable Effective Current (fC = 16 kHz): 30 A Devices

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SCM1200MF Series

15.5. Short Circuit SOAs (Safe Operating Areas)

Conditions: VDC ≤ 400 V, 13.5 V ≤ VCC ≤ 16.5 V, TJ = 125 °C, 1 pulse.

15.5.1. SCM1261MF

200

150
Collector Current, IC(PEAK) (A)

100

50 Short Circuit SOA

0
0 1 2 3 4 5

Pulse Width (µs)

15.5.2. SCM1242MF, SCM1263MF

250

200
Collector Current, IC(PEAK) (A)

150

100
Short Circuit SOA

50

0
0 1 2 3 4 5

Pulse Width (µs)

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SCM1200MF Series

15.5.3. SCM1265MF

300

250
Collector Current, IC(PEAK) (A)

200

150

100 Short Circuit SOA

50

0
0 1 2 3 4 5
Pulse Width (µs)

15.5.4. SCM1256MF

400

350

300
Collector Current, IC(PEAK) (A)

250

200

150
Short Circuit SOA
100

50

0
0 1 2 3 4 5
Pulse Width (µs)

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SCM1200MF Series

16. Pattern Layout Example

This section contains the schematic diagrams of a PCB pattern layout example using an SCM1200MF series
device. For reference terminal hole sizes, see Section 10.3.

Figure 16-1. Top View

Figure 16-2. Bottom View

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SCM1200MF Series

LS1
33
FO1
1
R4 2 OCP1
C20
3 LIN1
4 COM1 U 32
5 HIN1
6 VCC1
C17
31
C14 VB1
7
8 HS1
C1 LS230
FO2
9
10 OCP2
11 LIN2 1 U
V
12 COM2 29 2 V
13 HIN2 3 W
14 VCC2
C18 SV4

28
C15 VB2
FO 1 15
5V 2 16 HS2
R5 C2 LS3
LIN1 3 27
R6 FO3
HIN1 4 17
R7
LIN2 5 18 OCP3
R8
HIN2 6 19 LIN3
R9 W26
LIN3 7 20 COM3
R10
HIN3 8 21 HIN3
VCC 9 22 VCC3
C19
COM 10
VBB
C5
C6
C7
C8
C9
C10

25 1 VBB
SV2 C16 VB3
23
D5 24 HS3 2 PGND
C3
SV3
NC 1
R13
OCP1 2
R12
OCP2 3
R11
C21

OCP3 4

SV1
C12/RT

C25
R16

C24
R15

C23
R14
D3

D2

D1
R3

R2

R1
C11

C13
D4
C4

Figure 16-3. Circuit Diagram of PCB Pattern Layout Example

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SCM1200MF Series

17. Typical Motor Driver Application

This section contains the information on the typical motor driver application listed in the previous section, including
a circuit diagram, specifications, and the bill of the materials used.
● Motor Driver Specifications
IC SCM1242MF
Main Supply Voltage, VDC 300 VDC (typ.)
Output Power Rating 1.35 kW
● Circuit Diagram
See Figure 16-3.
● Bill of Materials
Symbol Part Type Ratings Symbol Part Type Ratings
C1 Electrolytic 47 μF, 50 V R1* Metal plate 27 mΩ, 2 W
C2 Electrolytic 47 μF, 50 V R2* Metal plate 27 mΩ, 2 W
C3 Electrolytic 47 μF, 50 V R3* Metal plate 27 mΩ, 2 W
C4 Electrolytic 100 μF, 50 V R4 General 4.7 kΩ, 1/8 W
C5 Ceramic 100 pF, 50 V R5 General 100 Ω, 1/8 W
C6 Ceramic 100 pF, 50 V R6 General 100 Ω, 1/8 W
C7 Ceramic 100 pF, 50 V R7 General 100 Ω, 1/8 W
C8 Ceramic 100 pF, 50 V R8 General 100 Ω, 1/8 W
C9 Ceramic 100 pF, 50 V R9 General 100 Ω, 1/8 W
C10 Ceramic 100 pF, 50 V R10 General 100 Ω, 1/8 W
C11 Ceramic 2200 pF, 50 V R11 General 100 Ω, 1/8 W
C12/RT Ceramic 2200 pF, 50 V R12 General 100 Ω, 1/8 W
C13 Ceramic 2200 pF, 50 V R13 General 100 Ω, 1/8 W
C14 Ceramic 0.1 μF, 50 V R14* General Open
C15 Ceramic 0.1 μF, 50 V R15* General Open
C16 Ceramic 0.1 μF, 50 V R16* General Open
C17 Ceramic 0.1 μF, 50 V D1 General 1 A, 50 V
C18 Ceramic 0.1 μF, 50 V D2 General 1 A, 50 V
C19 Ceramic 0.1 μF, 50 V D3 General 1 A, 50 V
C20 Ceramic 0.01 μF, 50 V D4 Zener VZ = 20 V, 0.5 W
C21 Film 0.1 μF, 630 V D5 General Open
C22* Ceramic 0.1 μF, 50 V SV1 Pin header Equiv. to MA04-1
C23* Ceramic 0.1 μF, 50 V SV2 Pin header Equiv. to MA10-1
C24* Ceramic 0.1 μF, 50 V SV3 Connector Equiv. to B2P3-VH
C25 Ceramic Open SV4 Connector Equiv. to B3P5-VH
IPM1 IC SCM1242MF
* Refers to a part that requires adjustment based on operation performance in an actual application.

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SCM1200MF Series

Important Notes
● All data, illustrations, graphs, tables and any other information included in this document (the “Information”) as to Sanken’s
products listed herein (the “Sanken Products”) are current as of the date this document is issued. The Information is subject to any
change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales
representative that the contents set forth in this document reflect the latest revisions before use.
● The Sanken Products are intended for use as components of general purpose electronic equipment or apparatus (such as home
appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products,
please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to
Sanken. When considering use of the Sanken Products for any applications that require higher reliability (such as transportation
equipment and its control systems, traffic signal control systems or equipment, disaster/crime alarm systems, various safety
devices, etc.), you must contact a Sanken sales representative to discuss the suitability of such use and put your signature, or affix
your name and seal, on the specification documents of the Sanken Products and return them to Sanken, prior to the use of the
Sanken Products. The Sanken Products are not intended for use in any applications that require extremely high reliability such as:
aerospace equipment; nuclear power control systems; and medical equipment or systems, whose failure or malfunction may result
in death or serious injury to people, i.e., medical devices in Class III or a higher class as defined by relevant laws of Japan
(collectively, the “Specific Applications”). Sanken assumes no liability or responsibility whatsoever for any and all damages and
losses that may be suffered by you, users or any third party, resulting from the use of the Sanken Products in the Specific
Applications or in manner not in compliance with the instructions set forth herein.
● In the event of using the Sanken Products by either (i) combining other products or materials or both therewith or (ii) physically,
chemically or otherwise processing or treating or both the same, you must duly consider all possible risks that may result from all
such uses in advance and proceed therewith at your own responsibility.
● Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the
occurrence of any failure or defect or both in semiconductor products at a certain rate. You must take, at your own responsibility,
preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which
the Sanken Products are used, upon due consideration of a failure occurrence rate and derating, etc., in order not to cause any
human injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products.
Please refer to the relevant specification documents and Sanken’s official website in relation to derating.
● No anti-radioactive ray design has been adopted for the Sanken Products.
● The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all
information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of
use of the Sanken Products.
● Sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third
party, or any possible infringement of any and all property rights including intellectual property rights and any other rights of you,
users or any third party, resulting from the Information.
● No information in this document can be transcribed or copied or both without Sanken’s prior written consent.
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any other rights of Sanken.
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● Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including
the falling thereof, out of Sanken’s distribution network.
● Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is
error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting
from any possible errors or omissions in connection with the Information.
● Please refer to our official website in relation to general instructions and directions for using the Sanken Products, and refer to the
relevant specification documents in relation to particular precautions when using the Sanken Products.
● All rights and title in and to any specific trademark or tradename belong to Sanken and such original right holder(s).

DSGN-CEZ-16003

SCM1200MF-DSE Rev.2.4 SANKEN ELECTRIC CO., LTD. 55

Sep. 29, 2023 https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2015