Chapter-5(BEE)
MCQ on Transistors
1. What does BJT stand for in electronics?
a) Biased Junction Transistor
b) Bipolar Junction Transistor
c) Base Junction Transistor
d) Balanced Junction Transistor
Answer: b) Bipolar Junction Transistor
2. What are the three layers of a BJT?
a) Collector, Base, Emitter
b) Anode, Cathode, Gate
c) Source, Drain, Gate
d) Emitter, Collector, Gate
Answer: a) Collector, Base, Emitter
3. What is the majority charge carrier in the emitter region of a BJT?
a) Holes
b) Electrons
c) Ions
d) Neutrons
Answer: b) Electrons
4. In a PNP transistor, what type of charge carriers are majority carriers in the base region?
a) Electrons
b) Holes
c) Neutrons
d) Ions
Answer: b) Holes
5. What is the function of the base region in a BJT?
a) To provide mechanical support
b) To control the flow of current between the collector and emitter
c) To dissipate heat
d) To provide electrical insulation
Answer: b) To control the flow of current between the collector and emitter
6. What is the function of the collector region in a BJT?
a) To emit charge carriers
b) To control the flow of current between the base and emitter
c) To collect charge carriers emitted by the emitter
d) To provide electrical insulation
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Answer: c) To collect charge carriers emitted by the emitter
7. What are the two main types of BJT?
a) NPN and ZPN
b) PNP and NNP
c) NPN and PNP
d) PNP and ZNP
Answer: c) NPN and PNP
8. In which configuration does the emitter-base junction of a BJT remain forward biased while the
collector-base junction remains reverse biased?
a) Common emitter
b) Common base
c) Common collector
d) None of the above
Answer: b) Common base
9. What is the current gain of a BJT?
a) The ratio of collector current to base current
b) The ratio of emitter current to base current
c) The ratio of collector current to emitter current
d) The ratio of base current to collector current
Answer: c) The ratio of collector current to emitter current
10. What is the primary function of the base region in a BJT?
a) To emit charge carriers
b) To control the flow of current between the collector and emitter
c) To collect charge carriers emitted by the emitter
d) To provide electrical insulation
Answer: b) To control the flow of current between the collector and emitter
11. Which BJT configuration provides high voltage gain and input impedance but low output
impedance?
a) Common emitter
b) Common base
c) Common collector
d) Emitter follower
Answer: a) Common emitter
12. Which type of BJT configuration has the emitter terminal grounded?
a) Common emitter
b) Common base
c) Common collector
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d) Emitter follower
Answer: c) Common collector
13. What happens to the collector current of a BJT when the base-emitter junction is forward
biased?
a) Collector current decreases
b) Collector current increases
c) Collector current remains constant
d) Collector current becomes zero
Answer: b) Collector current increases
14. What is the typical voltage drop across the base-emitter junction of a silicon BJT in forward bias?
a) 0.1 to 0.2 volts
b) 0.6 to 0.7 volts
c) 1.2 to 1.3 volts
d) 2.0 to 2.1 volts
Answer: b) 0.6 to 0.7 volts
15. Which type of BJT configuration has the collector terminal grounded?
a) Common emitter
b) Common base
c) Common collector
d) Emitter follower
Answer: b) Common base
16. What is the primary function of the emitter terminal in a BJT?
a) To emit charge carriers
b) To control the flow of current between the base and collector
c) To collect charge carriers emitted by the collector
d) To provide electrical insulation
Answer: a) To emit charge carriers
17. Which of the following is NOT a type of BJT?
a) NPN
b) PNP
c) JFET
d) MOSFET
Answer: d) MOSFET
18. Which BJT configuration offers the highest current gain?
a) Common emitter
b) Common base
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c) Common collector
d) Emitter follower
Answer: a) Common emitter
19. Which layer of a BJT is lightly doped and very thin?
a) Collector
b) Base
c) Emitter
d) Substrate
Answer: b) Base
20. Which terminal of a BJT is heavily doped?
a) Collector
b) Base
c) Emitter
d) Substrate
Answer: c) Emitter
21. In a PNP transistor, the majority charge carriers in the base region are:
a) Electrons
b) Holes
c) Ions
d) Neutrons
Answer: b) Holes
22. What is the primary function of the base region in a BJT?
a) To collect charge carriers emitted by the emitter
b) To emit charge carriers
c) To control the flow of current between the collector and emitter
d) To provide electrical insulation
Answer: c) To control the flow of current between the collector and emitter
23. Which terminal of a BJT is connected to the N-type material?
a) Collector
b) Base
c) Emitter
d) Substrate
Answer: c) Emitter
24. The collector-base junction of a BJT is:
a) Heavily doped
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b) Lightly doped
c) Moderately doped
d) Not doped
Answer: b) Lightly doped
25. The emitter-base junction of a BJT is:
a) Heavily doped
b) Lightly doped
c) Moderately doped
d) Not doped
Answer: a) Heavily doped
26. Which of the following describes the construction of a Bipolar Junction Transistor?
a) It consists of a single layer of semiconductor material.
b) It consists of two layers of semiconductor material.
c) It consists of three layers of semiconductor material.
d) It consists of four layers of semiconductor material.
Answer: c) It consists of three layers of semiconductor material.
27. What is alpha (α) in the context of a transistor?
a) Alpha is the ratio of collector current to base current (IC/IB).
b) Alpha is the ratio of emitter current to collector current (IE/IC).
c) Alpha is the ratio of collector current to emitter current (IC/IE).
d) Alpha is the ratio of base current to collector current (IB/IC).
Answer: c) Alpha is the ratio of collector current to emitter current (IC/IE).
28. In a common emitter configuration, what does alpha represent?
a) Voltage gain (Av)
b) Current gain (Ai)
c) Power gain (Ap)
d) Transconductance (gm)
Answer: b) Current gain (Ai)
29. What is beta (β) commonly known as in the context of a transistor?
a) Emitter Efficiency
b) Base Efficiency
c) Collector Efficiency
d) Current Gain
Answer: d) Current Gain
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30. How is beta (β) calculated in a transistor?
a) β = IC / IE
b) β = IC / IB
c) β = IE / IC
d) β = IB / IC
Answer: b) β = IC / IB
31. Which of the following expressions represents the relationship between alpha (α) and beta (β) in
a transistor?
a) β = α / (1 - α)
b) α = β / (1 + β)
c) α = β / (1 - β)
d) β = α / (1 + α)
Answer: d) β = α / (1 + α)
32. How does a transistor operate when used as a switch in digital circuits?
a) In the active region
b) In the saturation region
c) In the cutoff region
d) In the linear region
Answer: b) In the saturation region
33. In a transistor switch, when the base-emitter junction is forward biased, what state is the
transistor in?
a) ON state
b) OFF state
c) Saturation state
d) Cutoff state
Answer: a) ON state
34. What happens to the collector-emitter junction of a transistor switch when the base-emitter
junction is forward biased?
a) It becomes reverse biased.
b) It becomes forward biased.
c) It remains unbiased.
d) It becomes open-circuited.
Answer: b) It becomes forward biased.
35. In a transistor switch, when the base-emitter junction is reverse biased, what state is the
transistor in?
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a) ON state
b) OFF state
c) Saturation state
d) Cutoff state
Answer: d) Cutoff state
36. What is the primary purpose of a transistor switch in electronic circuits?
a) To amplify signals
b) To regulate voltage
c) To act as a digital switch
d) To generate oscillations
Answer: c) To act as a digital switch
37. In a common-emitter transistor switch configuration, what determines the ON or OFF state of
the transistor?
a) The collector current
b) The base-emitter voltage
c) The emitter current
d) The collector-emitter voltage
Answer: b) The base-emitter voltage
38. Which region of operation of a transistor switch corresponds to a low collector-emitter voltage
and high collector current?
a) Saturation region
b) Cutoff region
c) Active region
d) Linear region
Answer: a) Saturation region
39. In which region of operation does a transistor switch exhibit minimal collector current and high
collector-emitter voltage?
a) Saturation region
b) Cutoff region
c) Active region
d) Linear region
Answer: b) Cutoff region
40. In a Common Base (CB) configuration, which terminal is common between input and output?
a) Base
b) Collector
c) Emitter
d) None of the above
Answer: a) Base
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41. What is the primary advantage of the Common Base (CB) configuration?
a) High input impedance
b) High voltage gain
c) High power gain
d) High output impedance
Answer: a) High input impedance
42. In the CB configuration, where is the input signal applied?
a) Base
b) Collector
c) Emitter
d) Both Base and Emitter
Answer: c) Emitter
43. What is the typical range of voltage gain in a CB configuration?
a) Greater than 100
b) Around 1
c) Less than 1
d) Approximately 50
Answer: c) Less than 1
44. What is the main drawback of the CB configuration?
a) Low voltage gain
b) Low power gain
c) Low input impedance
d) Low current gain
Answer: a) Low voltage gain
45. Which of the following parameters characterizes the current gain of a transistor in CB
configuration?
a) β
b) α
c) γ
d) δ
Answer: b) α
46. In a CB configuration, what is the relationship between input and output currents?
a) Input and output currents are equal
b) Input current is greater than output current
c) Output current is greater than input current
d) There is no fixed relationship between input and output currents
Answer: c) Output current is greater than input current
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47. In a Common Emitter (CE) configuration, where is the input signal applied?
a) Base
b) Collector
c) Emitter
d) Both Base and Emitter
Answer: a) Base
48. Which of the following statements about the CE configuration is true?
a) It has a low voltage gain
b) It provides a phase reversal between input and output signals
c) It has a high input impedance
d) It exhibits a low output impedance
Answer: b) It provides a phase reversal between input and output signals
49. What is the primary advantage of the Common Emitter (CE) configuration?
a) High input impedance
b) High voltage gain
c) High power gain
d) High output impedance
Answer: b) High voltage gain
50. In the CE configuration, what is the relationship between input and output currents?
a) Input and output currents are equal
b) Input current is greater than output current
c) Output current is greater than input current
d) There is no fixed relationship between input and output currents
Answer: c) Output current is greater than input current
51. What is the typical range of voltage gain in a CE configuration?
a) Greater than 100
b) Around 1
c) Less than 1
d) Approximately 50
Answer: a) Greater than 100
52. What is the main drawback of the CE configuration?
a) Low voltage gain
b) Low power gain
c) Low input impedance
d) Low current gain
Answer: c) Low input impedance
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53. Which of the following parameters characterizes the current gain of a transistor in CE
configuration?
a) β
b) α
c) γ
d) δ
Answer: a) β
54. In a CE configuration, what is the relationship between input and output voltages?
a) Input and output voltages are equal
b) Input voltage is greater than output voltage
c) Output voltage is greater than input voltage
d) There is no fixed relationship between input and output voltages
Answer: c) Output voltage is greater than input voltage
55. What does JFET stand for?
a) Junction-Free Electron Transistor
b) Junction Field-Effect Transistor
c) Junction-Friendly Electron Transistor
d) Jointly-Fabricated Electron Transistor
Answer: b) Junction Field-Effect Transistor
56. JFETs are primarily used as:
a) Voltage regulators
b) Power amplifiers
c) Current mirrors
d) Switching devices
Answer: d) Switching devices
57. In a JFET, the control of output current is achieved by:
a) Varying the base current
b) Varying the gate-source voltage
c) Varying the collector-emitter voltage
d) Varying the drain-source voltage
Answer: b) Varying the gate-source voltage
58. What are the two main types of JFETs?
a) PNP and NPN
b) P-Channel and N-Channel
c) Bipolar and Unipolar
d) Common Emitter and Common Collector
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Answer: b) P-Channel and N-Channel
59. In a JFET, which terminal controls the flow of current between the source and drain?
a) Source
b) Drain
c) Gate
d) Body
Answer: c) Gate
60. Which region of operation of a JFET is analogous to the saturation region of a bipolar transistor?
a) Cut-off
b) Pinch-off
c) Triode
d) Inversion
Answer: b) Pinch-off
61. The pinch-off voltage in a JFET is the voltage at which:
a) The gate-source junction is reverse biased
b) The gate-source junction is forward biased
c) The drain current reaches its maximum value
d) The drain-source voltage becomes zero
Answer: a) The gate-source junction is reverse biased
62. What is the typical input impedance of a JFET?
a) Low
b) Moderate
c) High
d) It depends on the biasing conditions
Answer: c) High
63. What type of biasing is required for a JFET to operate in its active region?
a) Forward biasing
b) Reverse biasing
c) No biasing is required
d) Biasing depends on the type of JFET
Answer: b) Reverse biasing
64. In which region does a JFET act as a voltage-controlled resistor?
a) Cut-off
b) Saturation
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c) Linear or Ohmic
d) Inversion
Answer: c) Linear or Ohmic
65. What is the relationship between the gate-source voltage (VGS) and the drain-source voltage
(VDS) in the saturation region of a JFET?
a) VGS < VDS
b) VGS = VDS
c) VGS > VDS
d) There is no specific relationship between VGS and VDS
Answer: a) VGS < VDS
66. Which of the following materials are commonly used for JFET construction?
a) Silicon (Si)
b) Germanium (Ge)
c) Gallium Arsenide (GaAs)
d) All of the above
Answer: d) All of the above
67. The drain-source resistance of a JFET in its linear region is primarily determined by:
a) The gate-source voltage (VGS)
b) The drain current (ID)
c) The pinch-off voltage (VP)
d) The substrate bias voltage
Answer: a) The gate-source voltage (VGS)
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