ACADEMIC GURU since 2020

BUILD THE FOUNDATION

Class: XII (Physics)[ Semiconductor Electronics sheet-01]
14.1 Introduction 9. The maximum wavelength of electromagnetic
1. The vacuum tubes are operate generally at radiation, which can create a hole-electron pair in
(a) low voltage (b) high voltage germanium. (Given that forbidden energy gap in
(c) low current (d) none of these. germanium is 0.72 eV)
2. Semiconductor devices (a) 1.7 x 10-6 m (b) 1.5 x 10-5 m
(a) are small in size (c) 1.3 x 10–4 m (d) 1.9 x 10-5 m
(b) consume low power 14.3 Intrinsic Semiconductor
(c) operate at low voltage 10. The probability of electrons to be found in the
(d) all of these. conduction band of an intrinsic semiconductor at a
14.2 Classification of Metals, Conductors and finite temperature
Semiconductors (a) increases with increasing band gap
3. At absolute zero, Si acts as a (b) decreases with increasing band gap.
(a) metal (b) semiconductor (c) decreases with increasing temperature.
(c) insulator (d) none of these (d) is independent of the temperature and band
4. In good conductors of electricity the type of gap.
bonding that exist is 11. An intrinsic semiconductor has a resistivity of
(a) Van der Walls (b) covalent 0.50Ω m at room temperature. Find the intrinsic
(d) metallic. (c) ionic carrier concentration if the mobilities of electrons
5. Carbon, silicon and germanium have four and holes are 0.39 m2 V–1 s–1 and 0.11 m² V–1 s–1
valence electrons each. These are characterised by respectively
valence and conduction bands separated by energy (a) 1.2 x 1018 m–3 (b) 2.5 x 1019 m–3
band gap respectively equal to (Eg)C (Eg)si; and (c) 1.9 x 1020 m–3 (d) 3.1 x 1021 m–3
(Eg)Ge Which of the following statements is true? 12. In pure semiconductor, the number of
(a) (Eg)si < (Eg)Ge< (Eg)C conduction electrons is 6 x 1018 per cubic metre.
(b) (Eg)C< (Eg)Ge< (Eg)si How many holes are there in a sample of size 1
(c) (Eg)C> (Eg)si> (Eg)Ge cm x 1 cm x 1mm?
(d) (Eg)C = (Eg)si = (Eg)Ge (a) 3 x 1010 (b) 6 x 1011
6. If the energy of a photon of sodium light (c) 3 x 1011 (d) 6 x 1010
(𝜆=589 nm) equals the band gap of 13. Mobilities of electrons and holes in a sample
semiconductor, the minimum energy required to of intrinsic germanium at room temperature are
create electron hole pair 0.54 m2 V–1 s–1 and 0.18 m2 V–1 s–1 respectively. If
(a) 1.1 eV (b) 2.1 eV the electron and hole densities are equal to 3.6 x
(c) 3.2 eV (d) 1.5 eV 1019 m–3 the conductivity of germanium is
7. The electrical conductivity of a semiconductor (a) 4.15 S m–1 (b) 2.12 S m–1
increases when electromagnetic radiation of wave (c) 1.13 S m–1 (d) 5.6 S m–1
length shorter than 2480 nm is incident on it. The 14. A block of pure silicon at 300 K has a length
band gap (in eV) for semiconductor is of 10 cm and an area of 1.0 cm². A battery of emf
(a) 0.9 (b) 0.7 (c) 0.5 (d) 1.1 2V is connected across it. The mobility of
8. Find the wavelength of light that may excite an electrons is 0.14 m² V–1 s–1 and their number
electron in the valence band of diamond to the density is 1.5 x 1016 m–3. The electron current is
conduction band. The energy gap is 5.50 eV. (a) 6.72 × 10–4 A (b) 6.72 x 10–5 A
(a) 226 nm (b) 312 nm (c) 6.72 x 10–6 A (d) 6.72 x 10–7 A
(c) 432 nm (d) 550 nm 14.4 Extrinsic Semiconductor
15. In an n-type silicon, which of the following (b) diffusion in forward bias, drift in reverse bias
statements is true? (c) diffusion in both forward and reverse bias
(a) Electrons are majority carriers and trivalent (d) drift in both forward and reverse bias.
atoms are the dopants. 22. In an unbiased p-n junction, holes diffuse from
(b) Electrons are minority carriers and pentavalent the p-region to n-region because
atoms are the dopants. (a) free electrons in the n-region attract them
(c) Holes are minority carriers and pentavalent (b) they move across the junction by the potential
atoms are the dopants. difference
(d) Holes are majority carriers and trivalent atoms (c) hole concentration in p-region is more as
are the dopants. compared to n-region
16. If a small amount of antimony is added to (d) all of these
germanium crystal 23. Region without free electrons and holes in a p-
(a) its resistance is increased n junction is
(b) it becomes a p-type semiconductor (a) n-region (b) p-region
(c) there will be more free electrons than holes in (c) depletion region (d) none of these
the semiconductor 24. Which of the following statements is incorrect
(d) none of these for the depletion region of a diode?
17. In n-type semiconductor when all donor states (a) There the mobile charges exist.
are filled, then the net charge density in the donor (b) Equal number of holes and electrons exist,
states becomes making the region neutral.
(a) 1 (b) > 1 (c) Recombination of holes and electrons has
(c) < 1, but not zero (d) zero. taken place.
18. A pure Si crystal has 5 x 1022 atoms m–3. It is (d) None of these.
doped by 1 ppm concentration of pentavalent 25. Potential barrier developed in a junction diode
impurity. The number of holes is (ni2= nhne) (Take opposes the flow of
ni = 1.5 x 1016 m–3) (a) minority carrier in both regions only
(a) 4.5 x 109 m-3 (b) 4.5 x 106 m-3 (b) majority carriers only
(c) 2.5 x 109 m-3 (d) 2.5 x 106 m-3 (c) electrons in p region
19. A semiconductor has equal electron and hole (d) holes in p region.
concentration of 6 x 108 per m³. On doping with 26. A potential barrier of 0.3 V exists across a p-n
certain impurity, electron concentration increases junction. If the depletion region is 1 µm wide,
to 9 × 1012 per m³. The new hole concentration is what is the intensity of electric field in this
(a) 2 x 104 per m3 (c) 4 x 104 per m3 region?
(b) 2 x 102 per m3 (d) 4 x 102 per m3 (a) 2 x 105 V m–1 (b) 3 x 105 V m–1
20. The number density of electrons and holes in (c) 4 x 105 V m–1 (d) 5 x 105 V m–1
pure silicon at 27 °C are equal and its value is 2.0 14.6 Semiconductor Diode
× 1016 m–3. On doping with indium the hole 27. Which of the junction diodes shown here are
density increases to 4.5 x 1022m–3, the electron forward biased?
density in doped silicon is
(a) 10 x 109 m-3 (b) 8.89 x 109 m-3
(c) 11 x 109 m-3 (d) 16.78 x 109 m-3
14.5 p-n Junction
21. The dominant mechanism for motion of
charge carriers in forward and reverse biased
silicon p-n junction are
(a) drift in forward bias, diffusion in reverse bias
28. A forward biased diode is

(a) 2 V (b) 4.5 V

(c) 4 V (d) 2.5 V
33. Of the diodes shown in the following figures,
which one is reverse biased?

29. When the voltage drop across a p-n junction

diode is increased from 0.65 V to 0.70 V, the
change in the diode current is 5 mA. The dynamic
resistance of the diode is
(a) 52Ω (b) 10Ω
(c) 20 Ω (d) 25 Ω
30. The V-I characteristic of a silicon diode is
shown in figure. The resistance of the diode at I D
= 15 mA is

34. The equivalent resistance of the circuit shown

in figure between the points A and B if V A < VB is

(a) 5 Ω (b) 10 Ω
(c) 2Ω (d) 20 Ω
31. The breakdown in a reverse biased diode is (a) 10 Ω (b) 20Ω
more likely to occur due to p-n junction (c) 5 Ω (d) 40 Ω
(a) large velocity of the minority charge carriers if 35. In the question number 34, the equivalent
the doping concentration is small resistance between the points A and B, if V A > VB
(b) large velocity of the minority charge carriers if is
the doping concentration is large (a) 10 Ω (b) 20 Ω
(c) strong electric field in a depletion region if the (c) 30 Ω (d) 15 Ω
doping concentration is small 36. The following table provides the set of values
(d) none of these. of V and I obtained for a given diode. Let the
32. In the circuit shown if current for the diode is characteristics 𝛼 be nearly linear, over this range,
20 μA, the potential difference across the diode is the forward and reverse bias resistance of the
given diode respectively are
V I
Forward 2.0 V 60mA
biasing 2.4 V 80 mA
Reverse 0V 0𝜇A
biasing –2V –0.25 𝜇A 41. In a half wave rectifier circuit operating from
(a) 10 Ω, 8 × 106 Ω (b) 20 Ω, 4 x 105Ω 50 Hz mains frequency, the fundamental
(c) 20 Ω, 8 x 106 Ω (d) 10 Ω, 10 Ω frequency in the ripple would be
37. The circuit shown in the figure contains two (a) 25 Hz (b) 50 Hz
diodes each with a forward resistance of 30 Ω and (c) 70.7 Hz (d) 100 Hz
with infinite backward resistance. If the battery 42. A sinusoidal voltage of rms value 220 V is
3V is 3 V, the current through the 50 Ω resistance applied to a diode and a resistor R in the circuit
(in ampere) is shown in figure, so that half wave rectification
occurs. If the diode is ideal, what is the rms
voltage across R₁?

(a) zero (b) 0.01

(c) 0.02 (d) 0.03 (a) 55√2 𝑉 (b) 110 V
38. The circuit has two oppositely connected idea (c) 110√2 𝑉 (d) 220 √2𝑉
diodes in parallel. What is the current flowing i 43. Which of the following circuits provides full
the circuit? wave rectification of an ac input?

(a) 2.0A (b) 1.33A

(c) 1.71A (d) 2.31A
14.7 Application of Junction Diode as a
Rectifier
39. With an ac input from 50 Hz power line, the
ripple frequency is 14.8 Special Purpose p-n Junction Diodes
(a) 50 Hz in the dc output of half wave as well as 44. What happens during regulation action of a
full wave rectifier Zener diode?
(b) 100 Hz in the dc output of half wave as well as (a) The current through the series resistance (R s)
full wave rectifier changes.
(c) 50 Hz in the dc output of half wave and 100 (b) The resistance offered by the Zener diode
Hz in dc output of full wave rectifier changes.
(d) 100 Hz in the dc output of half wave and 50 (c) The Zener resistance is constant.
Hz in the dc output of full wave rectifier. (d) Both (a) and (b)
40. In a full wave junction diode rectifier the input 45. A Zener diode is specified as having a
ac has rms value of 20 V. The transformer used is breakdown voltage of 9.1 V, with a maximum
a step up transformer having primary and power dissipation of 364 mW. What is the
secondary turn ratio 1: 2. The dc voltage in the maximum current the diode can handle?
rectified output is (a) 40 mA (b) 60 mA
(a) 12 V (b) 24 V (c) 50 mA (d) 45 mA
(c) 36 V (d) 42 V
46. In the given circuit, the current through the 49. A p-n photodiode is made of a material with a
Zener diode is band gap of 2 eV. The minimum frequency of the
radiation that can be absorbed by the material is
nearly
(hc = 1240 eV nm)
(a) 1 x 1014 Hz (b) 20 x 1014 Hz
(c) 10 x 1014 Hz (d) 5 x 1014 Hz
50. Ap-n photodiode is fabricated from a
semiconductor with a band gap of 2.5 eV. The
(a) 10 mA (b) 60mA signal wavelength is
(c) 5mA (d) 3033mA (a) 6000 Å (b) 6000 nm
47. From the Zener diode circuit shown in figure, (c) 4000 nm (d) 5000 Å
the current through the Zener diode is 51. Three photo diodes D₁, D2 and D3 are made of
semiconductors having band gap of 2.5 eV, 2 eV
and 3 eV, respectively. Which one will be able to
detect light of wavelength 6000 Å?
(a) D1 (b) D2
(c) D3 (d) D1 and D2 both
(a) 34 mA (b) 31.5 mA
(c) 36.5 mA (d) 2.5 mA
48. A Zener diode of power rating 1 W is to be
used as a voltage regulator. If Zener has a
breakdown of 5 V and it has to regulate voltage
which fluctuated between 3 V and 7 V, what
should be the value of Rs for safe operation?

(a) 5Ω (b) 10 Ω
(c) 15 Ω (d) 20 Ω

Website: academicguru.org.in ,Contact us: 7518488104, 6307342658 academicguru_founder

2022 H.S – Class-X 94.8% Class– XII- 94.4% 2023 H.S– Class- X- 95.8% Class–XII-94.8%
Address:- Ramajeet complex, Ashok Vihar Colony Kachehari Road BBk.