Scribd
Upload
278 views2 pages

Bec 301 ST2 2023-24

The document is a test paper for an electronics course. It contains questions about semiconductor physics, carrier transport, special purpose diodes, bipolar junction transistors, and MOS transistors. The test has multiple choice and long answer questions across several sections.

Uploaded by

Anonymous eWMnRr70q
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
278 views2 pages

Bec 301 ST2 2023-24

The document is a test paper for an electronics course. It contains questions about semiconductor physics, carrier transport, special purpose diodes, bipolar junction transistors, and MOS transistors. The test has multiple choice and long answer questions across several sections.

Uploaded by

Anonymous eWMnRr70q
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

ROLL NO.

G.L. BAJAJ INSTITUTE OF TECHNOLOGY & MANAGEMENT


GREATER NOIDA
B. TECH (III-SEM) - (Electronics and Communication Engineering)
SESSIONAL TEST-2 (ODD SEM 2023-24)
ELECTRONIC DEVICES (BEC 301)
Faculty Name: Dr. Dharmender Nishad / Mr. Mohit
Time: 2:00 Hrs ` Max. Marks: 50
Note: (i) No student will be allowed to leave the examination Room before end of exam.
(ii) Diagram should be neat and clean.
(iii) Mention Question number/section correctly.
(iv) Be precise in your answer.
(v) Do not write anything on question paper except Roll number.

Course Outcomes:
Following are the course outcomes of the subject: Electronic Devices
CO Code Course Outcome(CO) Bloom's Level
BEC301.1 Understand the principles of semiconductor Physics. L2- Understand
BEC301.2 Understand the carrier transport in semiconductors. L2- Understand
BEC301.3 Analyze and find application of special purpose diodes. L4- Analyze
BEC301.4 Understand the working principle and design of Bipolar Junction Transistor. L3- Apply
BEC301.5 Realize the mathematical models of MOS transistors L3- Apply
Section: A
1. Attempt all questions. (2*5= 10)
Q.No. Questions Marks CO BL
a) Define Contact Potential and how does it vary with the Biasing? 2 BEC301.2 L2

b) Differentiate between elemental and compound semiconducting 2 BEC301.3 L2


materials. Also comment on the materials used for LED.
c) Plot the input and output characteristics of CE configuration. 2 BEC301.4 L2

d) Draw the circuit diagram of Fixed biasing using BJT and calculate 2 BEC301.4 L3
the operating point.
e) Find the current gain β in CE configuration of BJT, if α = 0.98. 2 BEC301.4 L3

Section: B

2. Attempt any four of the following: (5*4 = 20)


Q.No. Questions Marks CO BL
Differentiate Zener and avalanche thermal breakdown mechanisms
a) on the basis of doping, voltage, and required depletion region width 5 BEC301.3 L2
and ionization effect..
Explain the working of Solar cell. Discuss open circuit output
voltage characteristic and short circuit current characteristic. Also BEC301.3 L3
b) 5
derive the Efficiency of solar cell.
What is Photodiode? Discuss its construction, working principle,
c) merits, demerits and applications. 5 BEC301.3 L2

Construct and demonstrate the working mechanism of Common base


5
d) Configuration of BJT with its V-I Characteristics and amplification BEC301.4 L2
factor.

Sketch the circuit for BJT biasing using constant current source and
e) 5 BEC301.4 L3
show that output current Io = IRef
Define α, β and γ of a transistor and derive the relationship
f) between them. 5 BEC301.4 L3

Section: C
3. Attempt any one question (10 *1 = 10)
Q. No. Questions Marks CO BL
a) Derive the expression for diode current equation for a PN junction
diode. Also plot its V-I Characteristics 10 BEC301.2 L3

b) A Si p-n junction is having conductivity 0.7Ω–1cm–1 on the p side


and 1.5 Ω–1cm–1 on the n-side. Calculate Built in potential V0, W,
10 BEC301.2 L3
Xpo (transition region width on p side) and Xno (transition region
width on n side) at room temperature. Given μn = 3900cm2/ V-s , μp
=1900 cm2/V-S , ni =2.4X1013 cm-3.єo =8.854 X10–14F/cm , єr=11.8

4. Attempt any one question (10 *1 = 10)


Q. No. Questions Marks CO BL
a) Explain Bipolar junction Transistor using Ebers moll transistor model? 10 BEC301.4 L3

b) Design a potential divider biasing circuit with the following


specifications: Assume Si transistor with β =50, Vcc =22.5 V and Rc 10 BEC301.4 L3
= 5.6 KΩ. It is desired to establish Q point at VCE =12V, Ic =1.5mA
and S =3.

Course Outcome Wise Marks Distribution


0%
L2
26%
70
60
50 41
40
30 22
17
20
10 L3
0 74%
CO2 CO3 CO4
Blooms Level Distribution
Checked By
(Head of Department)

You might also like