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by MJE200/D
SEMICONDUCTOR TECHNICAL DATA

   

  
 
. . . designed for low voltage, low–power, high–gain audio amplifier applications.
• Collector–Emitter Sustaining Voltage —

VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
*Motorola Preferred Device
• High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc
High DC Current Gain — hFE = 45 (Min) @ IC = 2.0 Adc
5 AMPERE
High DC Current Gain — hFE = 10 (Min) @ IC = 5.0 Adc
POWER TRANSISTORS
• Low Collector–Emitter Saturation Voltage —
COMPLEMENTARY
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
SILICON
VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
25 VOLTS
• High Current–Gain — Bandwidth Product —
15 WATTS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
fT = 65 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ICBO = 100 nAdc @ Rated VCB

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Rating Symbol Value Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage VCB 40 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage VCEO 25 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEB 8.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous IC 5.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Peak 10 CASE 77–08
TO–225AA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current IB 1.0 Adc
Total Power Dissipation @ TC = 25_C PD 15 Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Derate above 25_C 0.12 W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TA = 25_C PD 1.5 Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Derate above 25_C 0.012 W/_C
_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction TJ, Tstg – 65 to + 150
Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case θJC 8.34 _C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient θJA 83.4 _C/W

16 1.6
PD, POWER DISSIPATION (WATTS)
PD, POWER DISSIPATION (WATTS)

12 1.2
TA
TC

8.0 0.8

4.0 0.4

0 0
20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7

 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1) VCEO(sus) 25 — Vdc
(IC = 10 mAdc, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICBO

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCB = 40 Vdc, IE = 0) — 100 nAdc
(VCB = 40 Vdc, IE = 0, TJ = 125_C) µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
— 100

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current IEBO nAdc
(VBE = 8.0 Vdc, IC = 0) — 100

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (1) hFE —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 500 mAdc, VCE = 1.0 Vdc) 70 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 2.0 Adc, VCE = 1.0 Vdc) 45 180
(IC = 5.0 Adc, VCE = 2.0 Vdc) 10 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage (1) VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 500 mAdc, IB = 50 mAdc) — 0.3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 2.0 Adc, IB = 200 mAdc) — 0.75
(IC = 5.0 Adc, IB = 1.0 Adc) — 1.8

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter Saturation Voltage (1) VBE(sat) — 2.5 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 5.0 Adc, IB = 1.0 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage (1)
ÎÎÎÎÎÎÎ VBE(on) — 1.6 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 2.0 Adc, VCE = 1.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain — Bandwidth Product (2) fT 65 — MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance Cob pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJE200 — 80

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MJE210 — 120
[
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
(2) fT = hfe• ftest.

VCC
+ 30 V
1K
500 td
RC 300
25 µs 200
+11 V RB SCOPE
100
0
t, TIME (ns)

50
– 9.0 V 51 D1
30 tr
20 VCC = 30 V
tr, tf ≤ 10 ns IC/IB = 10
–4 V 10
DUTY CYCLE = 1.0% TJ = 25°C
5
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS MJE200
3
D1 MUST BE FAST RECOVERY TYPE, e.g.: 2 MJE210
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA 1
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10
IC, COLLECTOR CURRENT (AMPS)

Figure 2. Switching Time Test Circuit Figure 3. Turn–On Time

2 Motorola Bipolar Power Transistor Device Data

  
1.0

r(t), TRANSIENT THERMAL RESISTANCE

0.7 D = 0.5
0.5

0.3 0.2
(NORMALIZED)

0.2 0.1 P(pk)

θJC(t) = r(t) θJC
0.05 θJC = 8.34°C/W MAX
0.1
D CURVES APPLY FOR POWER
0.07 0.02 PULSE TRAIN SHOWN t1
0.05 0.01 READ TIME AT t1 t2
0.03 TJ(pk) – TC = P(pk) θJC(t)
0 (SINGLE PULSE) DUTY CYCLE, D = t1/t2
0.02

0.01
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
t, TIME (ms)

Figure 4. Thermal Response

10
7.0 1.0 ms 500 µs 100 µs There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
IC, COLLECTOR CURRENT (AMP)

5.0
down. Safe operating area curves indicate IC – VCE limits of
3.0 dc 5.0 ms the transistor that must be observed for reliable operation;
2.0 i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
1.0 TJ = 150°C
The data of Figure 5 is based on T J(pk) = 150_C; TC is
0.7 BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
variable depending on conditions. Second breakdown pulse
0.5
limits are valid for duty cycles to 10% provided T J(pk)
0.3
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED v 150 _ C. T J(pk) may be calculated from the data in
0.2 CURVES APPLY BELOW Figure 4. At high case temperatures, thermal limitations will
RATED VCEO reduce the power that can be handled to values less than the
0.1 limitations imposed by second breakdown.
1.0 2.0 3.0 5.0 7.0 10 20 30
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

10K 200
5K ts VCC = 30 V
TJ = 25°C
3K IC/IB = 10
2K IB1 = IB2 Cib
C, CAPACITANCE (pF)

1K TJ = 25°C 100
t, TIME (ns)

500 70
300
200
50
100 tf Cob
50
30 MJE200 30 MJE200 (NPN)
20 MJE210 MJE210 (PNP)
10 20
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40
IC, COLLECTOR CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn–Off Time Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data 3

 
NPN PNP
MJE200 MJE210

400 400
TJ = 150°C

25°C TJ = 150°C
200 200
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

25°C
– 55°C
100 100
80 80 – 55°C
60 60

40 VCE = 1.0 V 40
VCE = 2.0 V VCE = 1.0 V
VCE = 2.0 V
20 20
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain

2.0 2.0
TJ = 25°C TJ = 25°C
1.6 1.6
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

1.2 1.2

VBE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10

0.8 0.8

VBE @ VCE = 1.0 V VBE @ VCE = 1.0 V

0.4 0.4
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10
0 0
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltage

+ 2.5 + 2.5
θV, TEMPERATURE COEFFICIENTS (mV/ °C)

θV, TEMPERATURE COEFFICIENTS (mV/ °C)

+ 2.0 *APPLIES FOR IC/IB ≤ hFE/3 + 2.0 *APPLIES FOR IC/IB ≤ hFE/3
+ 1.5 + 1.5
+ 1.0 + 1.0 25°C to 150°C
+ 0.5 25°C to 150°C + 0.5
θVC for VCE(sat) *θVC for VCE(sat)
0 0 – 55°C to 25°C
– 55°C to 25°C
– 0.5 – 0.5
– 1.0 – 1.0 25°C to 150°C
25°C to 150°C
– 1.5 – 1.5 θVB for VBE – 55°C to 25°C
θVB for VBE
– 2.0 – 55°C to 25°C – 2.0
– 2.5 – 2.5
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients

4 Motorola Bipolar Power Transistor Device Data

  
PACKAGE DIMENSIONS

–B–
NOTES:
U F C 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
Q 2. CONTROLLING DIMENSION: INCH.
M
–A– INCHES MILLIMETERS
DIM MIN MAX MIN MAX
1 2 3 A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
H D 0.020 0.026 0.51 0.66
K F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
V J M 5 _ TYP 5 _ TYP
Q 0.148 0.158 3.76 4.01
G R R 0.045 0.055 1.15 1.39
S 0.025 0.035 0.64 0.88
S 0.25 (0.010) M A M B M
U 0.145 0.155 3.69 3.93
V 0.040 ––– 1.02 –––
D 2 PL
0.25 (0.010) M A M B M STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE

CASE 77–08
TO–225AA
ISSUE V

Motorola Bipolar Power Transistor Device Data 5

 

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6 Motorola Bipolar Power Transistor Device Data

*MJE200/D*
◊ MJE200/D