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Electronic Devices

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Shirin Razdan
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28 views

Electronic Devices

Uploaded by

Shirin Razdan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Section A - Objective Type:

1. a) N-type source, n-type drain and p-type bulk


2. b) Silicon dioxide
3. c) Metal
4. b) Gate voltage
5. c) Both a) and b)

Section B - Short Answer Type:

1. MOS Capacitor:
 Explanation: The MOS (Metal-Oxide-Semiconductor)
capacitor consists of a metal gate separated from the
semiconductor by a thin insulating oxide layer (usually
silicon dioxide).
 Applications: Used as a key component in MOSFETs
and integrated circuits. It plays a crucial role in
controlling the flow of charge carriers between the
source and drain terminals.
2. Pinch-Off Voltage:
 Explanation: Pinch-off voltage is the gate-source
voltage at which the channel of a MOSFET gets pinched
off, leading to a decrease in drain current. It is a critical
parameter in MOSFET operation, determining the point
where the channel becomes depleted.
3. V-I Characteristics of N-Channel DMOSFET:
 Explanation: The V-I characteristics of an N-Channel
DMOSFET show the relationship between the drain
current (I<sub>D</sub>) and the drain-to-source
voltage (V<sub>DS</sub>). It typically exhibits three
regions: ohmic, saturation, and cutoff.
 Diagram: N-Channel DMOSFET V-I Characteristics
4. Constructional Difference Between DMOSFET and
EMOSFET:
 Difference: DMOSFET (Double-Diffused MOSFET) is
constructed with two layers of diffused material for the
channel. EMOSFET (Enhancement MOSFET) is a broader
term that includes both NMOS (N-channel) and PMOS
(P-channel) types.
 Note: DMOSFET is a specific type of MOSFET, and
EMOSFET is a more general term.
5. Use of SiO2 Layer in MOSFET:
 Explanation: The SiO2 layer (silicon dioxide) in
MOSFET serves as the gate oxide. It insulates the metal
gate from the semiconductor material, allowing the
gate to control the flow of charge carriers in the
channel. The SiO2 layer also prevents leakage currents
between the gate and the semiconductor, ensuring
proper device operation.
Section C - Long Answer Type:
1. Gate Oxide Thickness Calculation:
 Given Data:
 Area of the MOS capacitor (A) = 1×10−4 cm21×10−4cm2
 Permittivity of silicon (0ϵ0ϵr) = 1×1012 F/cm1×1012F/cm
 Permittivity of SiO2 (0SiO2ϵ0ϵrSiO2) = 3.5×10−13
F/cm3.5×10−13F/cm
 Formula: =0C=dϵ0ϵr⋅A =0SiO2⋅d=Cϵ0ϵrSiO2⋅A
 Calculation:
=(1×1012⋅3.5×10−13⋅1×10−4)d=C(1×1012⋅3.5×10−13⋅1×10−4)
 Note: The value of C (capacitance) needs to be provided for
an accurate calculation.
2. P-Channel DMOSFET:
 Diagram:
 Explanation:
 Similar to N-Channel DMOSFET but with a P-type
substrate.
 The source and drain regions are N-type, and the
substrate is P-type.
 The arrow in the symbol indicates P-type material.
3. General Expression for Transconductance (gm):
 Derivation:
 Transconductance is given by =∂DS∂GSgm=∂VGS∂IDS.
 For MOSFET, DS=12ox (GS−th)2IDS=21μnCoxLW(VGS−Vth
)2 .
 Differentiate DSIDS with respect to GSVGS to get gm.

Equation: DS=D0⋅(exp⁡(GS−th)−1)IDS=ID0⋅(exp(nVTVGS−Vth)−1)
4. Shockley's Equation and Role in MOSFET:

 Role:
 Describes the current-voltage characteristics of a
MOSFET.
 Helps in understanding the threshold voltage ( thVth) and
the effect of gate voltage on drain current.
5. JFET Parameters Calculation:
 a) ID at VGS = -2V and -3.6V:
 Use the JFET equation D=DSS(1−GS)2ID=IDSS(1−VPVGS)2.
 Substitute GSVGS values to find DID.
 b) VGS at ID = 3mA and 5.5mA:
 Rearrange the JFET equation to solve for GSVGS.
 Substitute DID values to find GSVGS.

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