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Assignement-I (1) - Output

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11 views

Assignement-I (1) - Output

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2023kucp1012
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© © All Rights Reserved
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11 A bar of puresilicon hasa length ofl cm (10*Z

m) and cross-sectional area of1 mm2. At 300K, the


intrinsic concentration of Si is 1.5x 10'° m*°. The free-
2
electron and hole mobilities are 0.13 ni /V-s and 0.05
m2/V-s, respectively. Find (a) the conductivity, and
(b) the resistance of the bar.
2 At 30D K, Si has 5 x 102' atoms/m’ and an
intrinsic concentration of 1.5x 10'° m . The free-
electron and hole mobilities are 0.13 m2/V-s and 0.05
m2 /V-s, respectively. Determine the concentration of
acceptor impurityrequired to dope silicon such that the
resulting conductivity is 20.8 U/m. How many parts pw
10' is this doping?
33 A bar of germanium hasa length of l cnx
(l0* m) anda cross-sectional area of1 mm2.At300K,
2

theintrinsicconcentration of Ge is 2.5 x 10'° m*°. The


free-electron and hole mobilities are 0.38 m2/V-s and
0.18 m2/V-s, respectively.Given that there are 4.4 x
1028 Ge atoms/m", determine the parts per 10 ofp-type
doping that results ina bar resistance of1 kfI.
33 A piece of silicon has 5 x 102' atoms/m . If
one side is doped with one part per 10' of an acceptor
impurity, and the other side is doped with two parts
per 107 ofa donor impurity, lind the barrier potential
across theresulting pn junction at 300 K, given that the
intrinsic concentrati on of Si is 1.5x 101‘m*’
44 The p side of a silicon pn junction has a
conductivity of 50 U/m, whereas then side has a
conductivity of 100 U/m. Determine the barrier
potential across the junction at 300 K, given that the
electron and hole mobilities are 0.13rn2/V-s and 0.05
m2/ V-s, respectively, and the intrinsic concentration of
Si is 1.5x l0'6 m
55 A silicon diode is forward biased at 20 rnA and
0.8 V at 300 K. Find the saruration current of the diode
forthecase that thetempemture is (a) 300 K, (b) 310 K,
(c) 316 K, and (d) 284 K.
66 A silicon diode witha saturation current of4 nA
at 300 K hasa forward-bias current of 20 mA. Find the
voltage across the diode forthecase that the temperature
is (a) 310 K, (b) 316 K, and (c) 284 K.
77 For the diodecircuit shown inFig. , Kg =
2 V and the silicon diode hasa saturation current of
1 nA tit 300 K. Given thatv = 0.7 V, find (a) fi2 when
Al =1 kf2, and (b)Al when fi2 = 1 kf2.

8 For the diode circuit shown in Fig. ,


s 6 V dRd thesilicon diodes havea saturation current
of1 nA at 300 K. (a) FindA2 for the case that fi =
10 kf2 and v, = 0.66 V. (b) Find fi; for the case that fi2
= 100 G and r2 = 0.66 V. (c) Find A, andA2 for the case
theftv = 0.68 V andv2 = .66 V.
9 For thediode ciwuit given in Fig. , D
is silicon witha saturation current of5 nA and D2 is
germanium witha saturation current of 10 pA. Find v,
and r2 at300K.

10
10 Forthedíode circuit shown inFig. , D
and D2 aresilicon diodes with saturaóon currents of
5 nA and 10 nA, respecóvely, at 300 K. Given that both
diodes aie revene biased, find v, and •2-

Vz

11
11 Forthediode circuit shown in Fig. , D,
i2nd D2 are
Silicon diodes having saturation currenu of
5 nA and 10 nA, respectively, at 300 K. Given that both
diodes areforward biased, find the value off forwhich
thecurrent is l5 mA.
12 The input voltage to the clipper circuit shown
inFig. is v, = 12 sin mi V. Determine theoutput
voltage v„ and sketch this function.
I kG

Note:

• All questions are compulsory.


• Each question carries 0.25 marks.
• Total marks forAssignment-I
for Assignment-I isis3 3 marks.
• Deadline for is6 6 PM
for submission is PM on Monday,44tthh March 2024.
on Monday,

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