Physics

Sample questions
14. SEMICONDUCTOR ELECTRONICS
Class : XII 2024-25

MCQ:
CLASSIFICATION OF METALS, CONDUCTORS AND SEMICONDUCTORS:
On the basis of energy bands:
1) Forbidden energy gap in a gemanium semiconductor is nearly equal to
a) 0.5 eV b) 6 eV c) 0.3 eV d) 0.7 eV
(Forbidden energy gap in a gemanium semiconductor is 0.7 eV
Forbidden energy gap in a silicon semiconductor is 1.1 eV)

INTRINSIC SEMICONDUCTOR:
1) Electrical conductivity of a semiconductor
a) decreases with the rise in its temperature.
b) increases with the rise in its temperature.
c) does not change with the rise in its temperature.
d) first increases and then decreases with the rise in its temperature.
2) In some substances, charge can flow at ordinary temperature, but not at very low
temperatures. These substances are called
a) conductors b) insulators
c) dielectrics d) semiconductors
(The resistance of a semiconductor increases with decrease in temperature and at absolute
zero semiconductors behave like insulators.)
3) In pure semiconductors, the number of conduction electrons is 6 x 10 18 per cubic metre.
How many holes are there in a sample of size 1 cm x 1 cm x 1 mm?
a) 6 x 1011 b) 5 x 1018 c) 4 x 1015 d) 3 x 1013
(In pure semiconductors, the number of conduction electrons (ne) = number of holes (nh)
number of holes per unit volume = 6 x 1018 per m3
size of the sample = 1 cm x 1 cm x 1 mm = 10-2 x 10-2 x 10-3 m3 = 10-7 m3
number of holes in the given sample of volume 10-7 m3 = 6 x 1018 x 10-7 = 6 x 1011 per m3)
4) In a p-n junction diode, the holes are due to
a) protons b) neutrons
c) extra electrons d) missing of electrons
(In a semiconductor, the electrons in an intrinsic semiconductor, which move in to the
conduction band at high temperatures are called as intrinsic carriers. In the valence band,
a vacancy is created at the place where the electron was present, before it had moved in
to the conduction band. This vacancy, with the effective positive electronic charge, is
called hole.)
5) When the conductivity of a semiconductor is only due to breaking of covalent bonds, the
semiconductor is called
a) extrinsic b) intrinsic c) n-type d) p-type
(In pure, i.e., intrinsic semiconductors, number of free electrons (ne) = number of holes
(nh). If the temperature is increased the covalent bonds will be broken and electrons will
move from valence band to conduction band leaving behind a hole in valence band. Thus,
its conductivity is only due to breaking of covalent bonds.
Whereas, in extrinsic/impure semiconductors some free charge carriers are available
for conduction (mainly) due to impurity atoms and also due to breaking of covalent
bonds.)

EXTRINSIC SEMICONDUCTOR (n-type & p-type) and p-n junction formation:

1) In an unbiased p-n junction, holes diffuse from the p-region to n-region because
a) free electrons in the n-region attract them.
b) they move across the junction by the potential difference.
c) hole concentration in p-region is more as compared to n-region.
d) All the above.
(The diffusion of charge carriers across a junction takes place from the region of higher
concentration to the region of lower concentration. In this case, the p-region has greater
concentration of holes than the n-region. Hence, in an unbiased p-n junction, holes
diffuse from the p-region to the n-region.)
2) In the depletion region of a diode
a) there are mobile charges
b) equal number of holes and electrons exist, making the region neutral
c) number of electrons are more than hole
d) immobile charged ions do not exist
(In the depletion region:
(1) There are immobile charge carriers/ions.
(2) The presence of equal number of holes and electrons makes the region neutral
(3) The recombination that has already taken place causes its very formation.
(4) Now we have the recombined immobile charges here.)
3) The region without free electrons and holes in a p n - junction diode is
a) p-region b) n-region
c) junction d) depletion region
(Depletion region is a region in a P-N Junction diode where no mobile charge carriers,
i.e. electrons and holes, are present.)

Case study – 1:
Read the following paragraph and answer the questions that follow.
If a donor impurity is diffused into one side of a crystal and an acceptor impurity into
the other, the boundary between those regions is called p-n junction. Due to diffusion,
free electrons of ‘n’ section combine with holes of ‘p’ section. This produces an electric
field and prevents the electrons and holes from crossing the junction. The small region in
the vicinity of p-n junction is called depletion layer.
i) In an intrinsic semiconductor,
a) there are no free electrons. b) there are only holes.
c) free electrons are thermally produced. d) none of these.
ii) What causes the barrier layer in a p-n junction?
a) Doping b) Recombination c) Barrier potential d) ions
iii) When a diode is forward biased, the recombination of the free electrons and holes may
produce
a) heat. b) light c) radiation d) all of these
iv) When the reverse voltage increase from 5 V to 10 V, the depletion layer
a) becomes larger b) becomes smaller c) is unaffected. d) breaks down
Or
iv) If the temperature of a piece of germanium increases its conductance
a) increases b) decreases
c) remains unchanged d) becomes zero

Case study – 2:
Read the following paragraph and answer the questions that follow.
Materials are classified on the basis of their conductivity as metals, semiconductors
and insulators. Metals are having low resistivity and high conductivity. While
semiconductors are having resistivity and conductivity in between metals and insulators.
And finally, insulators are those which are having high resistivity or very low
conductivity.
Semiconductors may exist as elemental semiconductors and also compound
semiconductors. Si and Ge are elemental semiconductor and CdS, GaAs, CdSe,
anthracene, polypyrene etc. are the compound semiconductors. Each electron in an atom
has different energy level and such different energy levels continuing forms the band of
energy called as energy bands. Those energy band which has energy levels of Valence
electrons is called as Valence band. And the energy band which is present above the
Valence band is called as conduction band.
On the basis of energy bands materials are also defined as metals, semiconductors
and insulators. In case of metals, conduction band and Valence band overlaps with each
other due to which electrons are easily available for conduction. In case of insulators,
there is some energy gap between conduction band and Valence band due to which no
free electrons are easily available for conduction. And in semiconductors, there is a small
energy gap between conduction band and Valence band and if we give some external
energy then electron from Valence band goes to conduction band due to which
conduction will be possible. These semiconductors are classified as intrinsic
semiconductors and extrinsic semiconductors also.
i) In case of p-type semiconductors___
a) nh << ne b) nh = ne c) nh >> ne d) nh = ne = 0
ii) An intrinsic semiconductor behaves like _____ at T = 0 K.
a) conductor b) metal c) non-metal d) insulator
iii) The energy band gap is maximum in which of the following?
a) Metals b) Superconductors
c) Insulators d) Semiconductors
iv) In semiconductors at room temperature, which of the following is likely to happen?
a) The valence band is partially empty and the conduction band is partially filled
b) The valence band is filled and the conduction band is partially filled
c) The valence band is filled
d) The conduction band is empty
OR
iv) If the energy band gap Eg > 3 eV then such materials are called as
a) conductors b) semiconductors
c) insulators d) superconductors

Case study – 3:
A pure semiconductor germanium or silicon, free of every impurity is called intrinsic
semiconductor. At room temperature, a pure semiconductor has very small number of
current carriers (electrons and holes). Hence its conductivity is low. When the impurity
atoms of valency five or three are doped in a pure semiconductor, we get respectively n-
type or p-type extrinsic semiconductor. In case of doped semiconductor 𝑛𝑒𝑛ℎ = ni2 Where
ne and nh are the number density of electron and hole charge carriers in a pure
semiconductor. The conductivity of extrinsic semiconductor is much higher than that of
intrinsic semiconductor.
i) Which of the following is true about p-type semiconductor?
a) concentration of electrons is less than that of holes.
b) concentration of electrons is more than that of holes.
c) concentration of electrons equal to that of holes.
d) None of these
ii) Which of the following is true about n-type semiconductor?
a) concentration of electrons is less than that of holes.
b) concentration of electrons is more than that of holes.
c) concentration of electrons equal to that of holes.
d) None of these
iii) How can a p-type semiconductor be converted into n-type semiconductor?
a) adding pentavalent impurity b) adding trivalent impurity
c) not possible d) heavy doping
OR
iii) Which of the following is the reason about diffusion current?
a) diffusion of holes from p to n b) diffusion of electrons from n to p
c) both (a) and (b) d) None of these
iv) What are the processes that occur during formation of a p-n junction?
a) drift b) diffusion c) both (a) and (b) d)None of these
SEMICONDUCTOR DIODE:
1) If the following input signal is sent through a PN-junction diode, then the output signal
across RL will be

Answer: c)
2) When a forward bias is applied to a p-n junction, it
a) raises the potential barrier.
b) reduces the majority carrier current to zero.
c) lowers the potential barrier.
d) None of the above
(When a forward bias is applied to a p-n junction, the direction of the applied voltage (V)
is opposite to the barrier potential Vo. As a result, the depletion layer width decreases and
the barrier height is reduced.)
3) In a forward biased pn junction there is a characteristic voltage upto which current
increases very slowly (almost negligibly). The value of this voltage for germanium diode
is
a) 0.6 V b) 0.2 V c) 1.12 V d) 0.72 V
(Threshold voltage for germanium 0.2 V [Note: it is, sometimes, given as 0.3 V]
Threshold voltage for silicon 0.7 V semiconductor)
4) Two bulbs B1 and B2 are connected across D1 and D2 respectively as shown in figure.
Which one of the following is correct?

a) B1 glows b) B2 glows
c) B1 and B2 glows d) Both bulbs do not glow
(Diode D1 is forward biased and behaves like a conductor (wire) and hence current will
not flow though bulb B1.
Diode D2 is reverse biased and current will not flow through it. The current will flow
though bulb B2. And it glows.)

Case study – 4:
In forward bias arrangements, the p-side of a p-n junction is connected to the positive
terminal of battery and n-side to negative terminal of battery, the current first increases
very slowly till a certain threshold voltage is reached. Beyond this value, the diode
current increases exponentially even for a very small increment in diode bias voltage. In
 reverse bias, the current suddenly increases at very high reverse bias. This is called
breakdown voltage.
i) The forward biased diode current is
a) more of drift current than the diffusion current.
b) predominantly drift current.
c) predominantly diffusion current.
d) an equal combination of drift and diffusion current.
ii) A forward biased p-n junction diode has a resistance of the order of
a) Ohm b) kilo ohm c) mega ohm d) none of these
iii) Which of the following characteristic of a reverse biased p-n junction?
a) A very narrow depletion region b) Large current flow
c) Almost no current d) Very slow resistance
iv) A reverse biased p-n junction act as
a) open switch b) closed switch
c) transformer d) full-wave rectifier
OR
iv) In a p-n junction, the potential barrier is due to the charges on either side of the junction,
these charges are,
a) majority charge carrier b) minority charge carrier
c) immobile donor and acceptor ions d) both a) and b)

APPLICATION OF JUNCTION DIODE AS A RECTIFIER:

1) If a full wave rectifier circuit is operating from 50 Hz mains, the fundamental frequency
in the ripple will be
(a) 25 Hz (b) 50 Hz (c) 70.7 Hz (d) 100 Hz
(In full wave rectifier, we get the output for the positive and negative cycle of input A.C.
Hence the frequency of the ripple of the output is twice than that of input A.C. i.e.100Hz)
2) A half -wave rectifier is used to convert 50 Hz A.C. to D.C. voltage. The number of
pulses per second in the rectified voltage is
a) 50 b) 25 c) 100 d) 75
(In a half-wave rectifier, alternating current in only one direction gets rectified. P-n
junction blocks the other part of the current to give current only in a single direction,
hence it vanishes its alternating property. Now, 50 Hz means that current or voltage will
change its direction from + to –, 50 times in 1 second. In other words, it will complete 50
cycles per second.
In a half-wave rectifier, Frequency of output signal = frequency of input signal)

For the following questions, two statements are given-one labelled Assertion (A) and the
other labelled Reason (R). Select the correct answer to these questions from the codes (a),
(b), (c) and (d) as given below.
a) Both A and R are true and R is the correct explanation of A
b) Both A and R are true and R is NOT the correct explanation of A
c) A is true but R is false
d) A is false and R is also false
1) ASSERTION (A): The electrical conductivity of a semiconductor increases on doping.
REASON (R): Doping always increases the number of electrons in the semiconductor.
c) A is true but R is false
(By doping impurities into semiconductors, depending on the valence e− of impurities,
either holes or free electrons are formed. These electrons and holes act as carriers for
electricity. So conductivity of semiconductor increases.)
2) ASSERTION (A): If the temperature of a semiconductor is increased, then its resistance
decreases.
REASON (R): The energy gap between conduction band and valence band is very
small.
b) Both A and R are true and R is NOT the correct explanation of A
3) Assertion (A): For the diode in reverse bias, the current is very small (~μA) and almost
remains constant with change in voltage. It is called reverse saturation current.
Reason (R): In reverse bias the thickness of the depletion layer is more.
(b) Both A and R are true and R is NOT the correct explanation of A.
(In reverse bias, the electric field direction of the junction is such that if electrons on p-
side or holes on n-side in their random motion come close to the junction, they will be
swept to its majority zone. This drift of carriers gives rise to current. The drift current is
of the order of a few μA. This is quite low because it is due to the motion of carriers
from their minority side to their majority side across the junction.)
4) Assertion (A): A pure semiconductor has negative temperature coefficient of resistance.
Reason (R): In a semiconductor on raising the temperature, more charge carriers are
released, conductance increases and resistance decreases.
(a) Both A and R are true and R is the correct explanation of A.
5) Assertion (A): In a pn junction in equilibrium there is no net current.
Reason (R): At equilibrium diffusion current exceeds drift current.
(c) A is true but R is false.
(During p-n junction formation, initially, diffusion current is large and drift current is
small. As the diffusion process continues, the space-charge regions on either side of the
junction extend, thus increasing the electric field strength and hence drift current. This
process continues until the diffusion current equals the drift current. Thus a p-n junction
is formed. In a p-n junction under equilibrium there is no net current.)
6) Assertion (A): Energy band structure of a semiconductor is affected by doping and
conductivity is greatly improved.
Reason (R): Additional energy states exist due to donor impurities and acceptor
impurities and with a small supply of energy conduction electrons can be shifted to, these
states.
(a) Both A and R are true and R is the correct explanation of A.
7) ASSERTION (A): Putting p-type semiconductor slab directly in physical contact with n-
type semiconductor slab cannot form the pn junction.
REASON (R): The roughness at contact will be much more than inter atomic crystal
spacing and continuous flow of charge carriers is not possible.
a) Both Assertion and Reason are true and Reason is correct explanation of
Assertion.
8) ASSERTION (A): The conductivity of intrinsic semiconductors increases with an
increase in temperature.
REASON (R): Increase in temperature decreases the average time between collisions of
electrons which results in decrease in resistivity.
a) Both Assertion and Reason are true but Reason is the correct explanation of
Assertion.

DESCRIPTIVE QUESTIONS
CLASSIFICATION OF METALS, CONDUCTORS AND SEMICONDUCTORS:
On the basis of energy bands:
Case study – 5: Read the following paragraph and answer the following questions.
From Bohr atomic model, we know that the electrons have well defined energy levels in
an isolated atom. But due to interatomic interactions in a crystal, the electrons of the
outer shells are forced to have energies different from those in isolated atoms. Each
energy level splits into a number of energy levels forming a continuous band. The gap
between top of valence band and bottom of the conduction band in which no allowed
energy levels for electrons can exist is called energy gap.

(i) What is the value of energy band gap in an insulator?

The value of energy band gap in an insulator > 3 eV ..……….….(1 m)

(ii) What is the order of separation between conduction and valence band in a
semiconductor?
The value of energy band gap in a semiconductor < 3 eV ..……….….(1 m)
e.g, energy band gap of Ge = 0.7 eV and energy band gap of Si = 1.1 eV

(iii)Carbon, silicon and germanium have four valence electrons each. At room temperature
what about the number of free electrons for conduction in all three?
In silicon and the germanium at the temperature of about 300 K, the energy band gap
is very less and hence the kinetic energy of the electrons will be more to conduct the
electric current.
But in the carbon, the energy band gap is more and hence it is not significant to
conduct the electrons.
Hence the number of free electrons for conduction is significant only in the silicon and
the germanium but not in the carbon. ..……….….(2 m)
(OR)
(iii)According to band theory, conductors, insulators and semiconductors, which among of
them has smallest forbidden gap?
In a conductor there are no band gaps between the valence and conduction bands. In
some metals the conduction and valence bands partially overlap.
An insulator has a large gap between the valence band and the conduction band. The
valence band is full as no electrons can move up to the conduction band. As a result, the
conduction band is empty.
In a semiconductor, the gap between the valence band and conduction band is
smaller. ..……….….(2 m)

INTRINSIC SEMICONDUCTOR:
1) carbon and silicon both have same lattice structure but C is an insulator while Si is a
semiconductor. Justify.
The 4 bonding electrons of C, Si or Ge lie, respectively, in the second, third and fourth
orbit. Hence, energy required to take out an electron from these atoms (i.e., ionisation
energy Eg) will be least for Ge, followed by Si and highest for C. Hence, number of free
electrons for conduction in Ge and Si are significant but negligibly small for C. …(1 m)

EXTRINSIC SEMICONDUCTOR (n-type & p-type):

1) Draw the energy band diagrams of an n-type and p-type semiconductor at temperature
T> 0 K. Mark the donor and acceptor energy levels with their energies.

2) Distinguish between an intrinsic semiconductor and a p-type semiconductor. Give reason

why a p-type semiconductor crystal is electrically neutral, although nh >> ne.
Intrinsic semiconductors P-type semiconductors
Intrinsic semiconductors are pure in form; no P-type semiconductors contain the doping of
form of impurity is added to them. trivalent impurities.
They exhibit poor electrical conductivity. Electrical conductivity is significantly high
as compared to intrinsic semiconductor.
The electrical conductivity depends only on The electrical conductivity depends on the
the temperature. temperature as well as the amount of doped
impurity.
 The number of free electrons in the The number of free electrons in the
conduction band is equal to the number of conduction band and the number of holes in
holes in the valence band. the valence band are not equal.
ne = nh nh >> ne
Any two points……………(1 m)
The crystal maintains an overall charge neutrality as the charge of additional charge
carriers is just equal and opposite to that of the ionised cores in the lattice. ………(1 m)

3) How does the width of a depletion region of p-n junction vary if doping concentration is
increased?
The thickness/width of the depletion layer decreases with increase in the rate of
doping. ………..….(1 m)

Case Study - 5:
Read the following paragraph and answer the questions.
A pure semiconductor germanium or silicon, free of every impurity is called intrinsic
semiconductor. At room temperature, a pure semiconductor has very small number of
current carriers (electrons and holes). Hence its conductivity is low. When the impurity
atoms of valance five or three are doped in a pure semiconductor, we get respectively n-
type or p-type extrinsic semiconductor. In case of doped semiconductor n e nh = ni2.
Where ne and nh are the number density of electron and hole charge carriers in a pure
semiconductor. The conductivity of extrinsic semiconductor is much higher than that of
intrinsic semiconductor.
(i) What is n-type semiconductor?
An n-type of semiconductor is obtained by adding pentavalent impurities in the
semiconductor material like silicon and germanium. ……………(1 m)
(ii) Do pure semiconductors obey Ohm’s law?
Pure semiconductors do not obey Ohm's law. (I-V characteristics of a pure
semiconductor is a curved line instead of straight line). ……………(1 m)
(iii)Can we take one slab of p-type semiconductor and physically join it to another n-type
semiconductor to get p-n junction?
No. Any slab, howsoever flat, will have roughness much larger than the inter-atomic
crystal spacing (~2 to 3 Å) and hence continuous contact at the atomic level will not be
possible. The junction will behave as a discontinuity for the flowing charge carriers.(2 m)
OR
(iii)Why does a semiconductor behave as an insulator at very low temperature?
A semiconductor acts like an ideal insulator at absolute zero temperature that is at zero
kelvin.
It is because the free electrons in the valence band of semiconductors will not carry
enough thermal energy to overcome the forbidden energy gap at absolute zero. ….(2 m)
p-n JUNCTION FORMATION:
1) Name the important processes that occur during the formation of a p - n junction. Explain
briefly, with the help of a suitable diagram, how a p - n junction is formed. Define the
term ‘barrier potential’.

……………(½ m)
Two important processes occur during the formation of a p-n junction: diffusion and
drift. Diffusion: During the formation of p-n junction, and due to the concentration
gradient across p-, and n- sides, holes diffuse from p-side to n-side (p  n) and electrons
diffuse from n-side to p-side (n  p). This motion of charge carries gives rise to
diffusion current across the junction.
When an electron diffuses from n  p, a layer of positive charge (or positive space-
charge region) on n-side of the junction is developed.
When a hole diffuses from p  n, a layer of negative charge (or negative space-charge
region) on the p-side of the junction is developed. ……………(1 m)
This space-charge region on either side of the junction together is known as depletion
region as the electrons and holes taking part in the initial movement across the junction
depleted the region of its free charges. ……………(½ m)
Due to the depletion region, an electric field directed from positive charge towards
negative charge develops. Due to this field, an electron on p-side of the junction moves
to n-side and a hole on n-side of the junction moves to p-side. The motion of charge
carriers due to the electric field is called drift. ……………(½ m)
The loss of electrons from the n-region and the gain of electron by the p-region cause
a difference of potential across the junction of the two regions. The polarity of this
potential is such as to oppose further flow of carriers so that a condition of equilibrium
exists. This potential is often called a barrier potential. ……………(½ m)

SEMICONDUCTOR DIODE:
1) (a) Name the device which utilizes unilateral action of a pn diode to convert ac into dc.
(b) Draw the circuit diagram of experimental circuit arrangement for studying V-I
characteristics of a p-n junction diode in forward bias.
(a) Rectifier ……………(1 m)
(b) Circuit diagram:

………(1 m)
2) Explain briefly with the help of necessary circuit diagrams, the forward and the reverse
biasing of p-n junction diode. Also draw their characteristic curves in the two cases.
Forward biasing: The battery is connected to the silicon diode through a potentiometer
(or rheostat), so that the applied voltage can be changed. For different values of voltages,
the value of current is noted. In forward bias the current increases at a negligibly slow
rate till the voltage across the diode reaches the threshold voltage. After this the current
increases significantly even for a very small voltage (This threshold voltage is 0.2 V for
Ge and 0.7 V for Si diode).
Reverse biasing: Now, in reverse bias, the current is very small (μA) and almost remains
constant for large change in bias voltage till the bias voltage reaches the breakdown
voltage. At this reverse bias voltage, the current suddenly increases.

3) How does junction width change when it is (i) forward biased? (ii) reverse biased?
When the p-n junction is forward biased, the width of the depletion layer decreases.
When an external voltage is applied, the barrier potential is reduced thereby, decreasing
the width of depletion layer.
When the p-n junction is reverse biased, the barrier potential increases, thereby,
increasing the thickness of the depletion layer. ………..….(1 m)

4) The V-I characteristic of a silicon diode is as shown in the figure. Calculate the
resistance of the diode at 1) I = 15 mA, 2) V = − 10 V.
1) Considering the straight line between 10mA and
20mA:
ΔI = I2 – I1 = 20 mA – 10 mA = 10 mA.
ΔV = V2 – V1 = 0.8 – 0.7 = 0.1 V.
Dynamic resistance in forward bias,
r= = = 10 Ω. ………..….(1 m)
2) In forward bias at (V = − 10 V):
R= = = = 107 Ω. ………..….(1 m)
5) The circuit shown in the figure has two oppositely connected ideal diodes connected in
parallel. Find the current flowing through each diode in the circuit.

Diode D1 is reversed biased, so it offers an infinite resistance. So no current flows in the

branch of diode D1.
Diode D2 is forward biased, and offers no resistance in the circuit.
So current in the branch is given by, I = = =2 A ……………(2 m)

6) State whether the given ideal diodes are forward biased or reverse biased.

For a given PN junction diode to be forward biased, P-region should have higher
potential than that of N-region.
i) Reverse Biased
ii) Reverse Biased.
Case Study - 6:
A semiconductor diode is basically a pn junction with metallic contacts provided at the
ends for the application of an external voltage. It is a two terminal device. When an
external voltage is applied across a semiconductor diode such that p-side is connected to
the positive terminal of the battery and n-side to the negative terminal, it is said to be
forward biased. When an external voltage is applied across the diode such that n-side is
positive and p-side is negative, it is said to be reverse biased. An ideal diode is one
whose resistance in forward biasing is zero and the resistance is infinite in reverse
biasing. When the diode is forward biased, it is found that beyond forward voltage called
knee voltage, the conductivity is very high. When the biasing voltage is more than the
knee voltage the potential barrier is overcome and the current increases rapidly with
increase in forward voltage. When the diode is reverse biased, the reverse bias voltage
produces a very small current about a few microamperes which almost remains constant
with bias. This small current is reverse saturation current.
i) In which of the following figures, the pn diode is reverse biased?

(c)
 ii) Based on the V-I characteristics of the diode, we can classify diode as
(a) bilateral device (b) ohmic device
(c) non-ohmic device (d) passive element
iii) Two identical PN junctions can be connected in series by three different methods as
shown in the figure. If the potential difference in the junctions is the same, then the
correct connections will be

(a) in the circuits (1) and (2) (b) in the circuits (2) and (3)
(c) in the circuits (1) and (3) (d) only in the circuit (1)
OR
iii) In the given figure, a diode D is connected to an external resistance R = 100 Ω and an
emf of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in
the circuit will be:

(a) 40 mA (b) 20 mA (c) 35 mA (d) 30 mA

iv)

The V-I characteristic of a diode is shown in the figure. The ratio of the resistance of the
diode at I = 15 mA to the resistance at V = - 10 V is
(a) 100 (b) 106 (c) 10 (d) 10-6

APPLICATION OF JUNCTION DIODE AS A RECTIFIER:

1) Draw the circuit diagram of a half wave rectifier and full wave rectifier using p-n
junction diode. Explain their working and show the input and output waveforms.
Circuit diagram of a half wave rectifier:
 ……………(1 m)
During positive half cycle, the voltage at A is positive, the diode is forward biased and it
conducts. ……………(½ m)
During negative half cycle A is negative, the diode is reverse-biased and it does not
conduct. ……………(½ m)

……………(½ m)
Circuit diagram of a full wave rectifier:

……………(1 m)
In the course of the ac cycle, suppose the input voltage to A with respect to the centre
tap at any instant is positive. At that instant, voltage at B being out of phase will be
negative. So, diode D1 gets forward biased and conducts (while D2 being reverse biased
is not conducting). Hence, during this positive half cycle we get an output current (and a
output voltage across the load resistor RL). ……………(½ m)
When the voltage at A becomes negative with respect to centre tap, the voltage at B
would be positive. In this part of the cycle diode D1 would not conduct but diode D2
conducts, giving an output current and output voltage (across RL) during the negative
half cycle of the input ac. ……………(½ m)
Thus, we get output voltage during both the positive as well as the negative half of
the cycle.

……………(½ m)
2) Write the property of a junction diode which makes it suitable for rectification of ac
voltage.
PN junction diode conducts during forward bias and does not conduct during reverse
bias or Alternatively Pn Junction offers low resistance during forward bias. .……(1 m)

3) In half wave rectification, what is the output frequency if the input frequency is 25Hz?
In half wave rectification, the output frequency = the input frequency = 25 Hz. .......(1 m)

4) In V-I characteristics of diode in forward bias, the change in current of 10 mA is

obtained due to change in voltage of 0.4 V, Calculate the dynamic resistance.
dynamic resistance, rd = = = = 0.4 x 102 = 0.4 x 100 = 40 Ω.

5) i) What is the output across the diode for the given sinusoidal signal applied across AB as
shown in figure.

ii) Draw energy band diagram of doped semiconductor where the ratio of number density
of electron to number density of hole is much less than 1. Name one dopant which is to
be added to intrinsic semiconductor to get the above extrinsic semiconductor.
iii) What modifications are to be made in the circuit diagram shown in figure so that it
can be used to study the characteristics of diode in reverse bias and plot V-I characteristic
graph for silicon diode?

i) The semiconductor diode (the one shown in the diagram) conducts when it is forward
biased. The first part of the signal makes the diode operate in forward biased condition,
so the same signal appears in the output.
In the second half of the signal, the diode operates in the reversed biased condition as
the signal is negative. So, the diode offers infinite resistance, and hence no signal appears
in the output.

………..….(1 m)

ii) Given: The ratio of the number density of electron to the number density of hole is
much less than 1  << 1 or ne << nh.
 if holes are majority, it is p-type semiconductor.
Band diagram of P-type semiconductor:

………..….(1 m)
The dopants to obtain p-type semiconductor are trivalent (valency 3) impurities like
Indium (In), Boron (B), Aluminium (Al), etc. ………..….(½ m)
iii) Battery polarity has to be changed such that –ve end of battery is connected to p-
side and vice versa. Milli ammeter has to be replaced with micro ammeter. …..….(½ m)

………..….(1 m)
Case Study - 7:
From the V-I characteristic of a junction diode we see that it allows current to pass
only when it is forward biased. So if an alternating voltage is applied across a diode the
current flows only in that part of the cycle when the diode is forward biased. This
property is used to rectify alternating voltages and the circuit used for this purpose is
called a rectifier. There are two types one is half wave rectifier and another one is full
wave rectifier.

i) Which one of the diode is reverse biased? Why? [1]

D)
p-side is at a lower potential than n-side.
ii) In the circuit given below, if the frequency of input ac signal is 50 Hz what is the output
frequency of the given circuit? [1]
 As both diodes conduct for half of the input signal, the output frequency = 50 Hz.
[Note: The given circuit diagram is not of the full wave rectifier. Diode 2 direction is
reversed.
iii) a) The threshold voltage of the two diodes D1 and D2 is 0.7 V.
What is the current drawn from the battery shown in the circuit?
b) Why the reverse breakdown voltage of the diode must be
sufficiently higher than the peak ac voltage at the secondary of the
transformer? [2]
a) D1 is forward biased and D2 is reverse biased.
I= = = = 1.55 A
b) To protect the diode from reverse breakdown.
OR
iii) a) Draw output wave from across the resistor RL in the below circuit for the given input
signal as shown.

b) Why is reverse saturation current independent of reverse bias low voltage?

a)

b) Reverse current is due to minority carriers and thickness of depletion layer is more.