Using CoventorWare

CoventorWare

2010
www. covent or. com
Version 2010
ii March 19, 2010 Coventor, Inc.
Coventor, Inc.
This manual and its accompanying materials are licensed to the user for the period set forth in the applicable license agreement,
subject to termination of the license by Coventor, Inc. at any time. The manual at all times remains the property of Coventor, Inc.,
or third parties from whom Coventor, Inc. has obtained a licensing right. The information contained in this manual including but
not limited to the ideas, concepts and know-how, is proprietary, confidential and trade secret to Coventor, Inc. or such third parties
and the information contained therein shall be maintained as proprietary, confidential, and trade secret to Coventor, Inc. or to such
third parties. The information in this manual shall not be copied or reproduced in any form whatsoever, nor is any information in
this manual to be disclosed to anyone other than an authorized representative of the users employer who is contractually obligated
not to disclose same, without express prior written consent of Coventor, Inc. The user of this manual and the computer program(s)
referred to herein retains full control over and is solely responsible for the mechanical design of the users equipment, machinery,
systems, and products. COVENTOR, INC. MAKES NO WARRANTIES OF ANY KIND, INCLUDING THE WARRANTY OF
MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE WITH RESPECT TO THE EQUIPMENT, MACHIN-
ERY, SYSTEMS, AND PRODUCTS, DERIVED OR RESULTING HEREUNDER, AND THE USER ASSUMES ALL RISKS
AND LIABILITY FOR RESULTS OBTAINED BY THE MANUFACTURING, USE OR IMPLEMENTATION OF THE COM-
PUTER PROGRAMS(S) DESCRIBED HEREIN, WHETHER USED SINGLY OR IN COMBINATION WITH OTHER
DESIGNS OR PRODUCTS. Coventor shall not be liable for any incidental, indirect, special, consequential, or punitive damages.
Coventor makes no warranty that the equipment, machinery, systems, and products derived or resulting hereunder will not infringe
the claims of domestic or foreign patents and further does not warrant against infringement by reason of the user, thereof in combi-
nation with other designs, products, or materials or in the operation of any process. User shall protect, indemnify and hold harm-
less Coventor of and from any loss, cost, damage (including attorneys fees) or expense arising from any claim that is any way
associated with the computer programs(s) described in this manual. Data presented in examples do not necessarily reflect actual
test results and should not be used as design criteria.
By acceptance of this manual, the user agrees to the above conditions and further agrees that this manual will not be exported (or
re-exported from a country of installation), directly or indirectly, separately or as part of a system, without user or users employer,
at its own cost, first obtaining all licenses from the United States Department of Commerce and any other appropriate agency of
the United States Government as may be required by law.
Coventor, Inc., 2010.
All rights reserved. No part of this work may be reproduced, stored in a retrieval system, or transmitted, in any form or by any
means, electronic or mechanical, including photocopying and recording, or by any information storage or retrieval system without
prior permission in writing from Coventor, Inc. Information in this document is subject to change without notice.
CoventorWare includes software developed by the University of California, Berkeley and its contributors.
CoventorWare is enhanced with Visualization Software from Tecplot, Inc. of Bellevue, Washington, USA.
CoventorWare and the associated documentation incorporate portions of ABAQUS/CAE and its associated documentation under
license from ABAQUS, Inc. ABAQUS is a registered trademark of ABAQUS, Inc.
Coventor, CoventorWare, Bubble-DropSim, CoSolveEM, CoventorWare ANALYZER, CoventorWare ARCHITECT, Coventor-
Ware DESIGNER, FlowMM, CoventorWare INTEGRATOR, MemElectro, MemCFD, DampingMM, MemFSI, MemHenry,
MemMech, NetFlow, ReactSim, SwitchSim, and WHATS NEXT, AND NEXT, AND NEXT are registered trademarks of Coven-
tor, Inc. Cary, NC.
DXF is a trademark of Autodesk, Inc.
Excel is a registered trademark of Microsoft Corporation
FLEXnet is a registered trademark of Globetrotter Software, Inc.
I-deas is a trademark of UGS.
Permalloy is a registered trademark of B&D Industrial & Mining Services, Inc.
SABER is a registered trademark of American Airlines, Inc., licensed to Synopsys, Inc.
SaberDesigner, SaberGuide, CosmosScope, SaberSimulator, and SaberSketch are trademarks of Synopsys, Inc.
Tecplot is a registered trademark of Tecplot, Inc.
Cadence, Verilog and Verilog-XL are registered trademarks of Cadence Design Systems, Inc.
Excel, and Windows XP are registered trademarks of Microsoft Corporation.
X Window System is a trademark of Massachusetts Institute of Technology.
MUMPs is a registered trademark of MEMSCAP, Inc.
VdmTools is proprietary and copyrighted software of Visual Kinematics, Inc.
All other trademarks or registered trademarks belong to their respective holders.
Contact us at www.coventor.com
Doc Ver 2010.000 Rev A Compatible with CoventorWare version 2010.000
Table of Contents Version 2010
Coventor, Inc. March 18, 2010 iii
M



Table of Contents
Section 1: Using CoventorWare
1.1: Major Components................................................................................. U1-2
1.1.1: Function Manager .................................................................................................... U1-2
1.1.2: Material Properties Database .................................................................................. U1-2
1.1.3: Process Editor.......................................................................................................... U1-3
1.1.4: ARCHITECT ............................................................................................................ U1-3
1.1.5: DESIGNER.............................................................................................................. U1-3
1.1.6: Meshing ................................................................................................................... U1-4
1.1.7: ANALYZER 3-D Field Solvers ................................................................................. U1-4
Parametric Study ..................................................................................................... U1-5
Visualizer ................................................................................................................. U1-5
Query Manager........................................................................................................ U1-5
1.1.8: Integrator.................................................................................................................. U1-5
1.2: Document Conventions ......................................................................... U1-6
1.2.1: Font Conventions..................................................................................................... U1-6
1.2.2: Icons ........................................................................................................................ U1-6
1.2.3: Page Numbering...................................................................................................... U1-7
1.2.4: On-Line Help............................................................................................................ U1-7
1.2.5: Other Conventions................................................................................................... U1-8
Tutorials................................................................................................................... U1-8
Screen Images ........................................................................................................ U1-8
1.2.6: Other Information Resources................................................................................... U1-8
1.3: CoventorWare Conventions .................................................................. U1-8
1.3.1: Coordinate System Conventions ............................................................................. U1-8
1.3.2: Units of Physical Quantities ..................................................................................... U1-9
1.3.3: Numerical Values Displayed in User Interface....................................................... U1-10
1.3.4: Units Displayed in User Interface........................................................................... U1-10
1.4: Licensing............................................................................................... U1-10
1.5: Function Manager Overview................................................................ U1-11
1.5.1: Materials ................................................................................................................ U1-11
1.5.2: Process.................................................................................................................. U1-12
1.5.3: Architect Tab.......................................................................................................... U1-14
1.5.4: Designer................................................................................................................. U1-15
Layout Editor ......................................................................................................... U1-15
Table of Contents Version 2010
iv March 18, 2010 Coventor, Inc.
Solid Modeling ....................................................................................................... U1-17
1.5.5: Analyzer ................................................................................................................. U1-18
1.5.6: Menu Functions...................................................................................................... U1-20
File......................................................................................................................... U1-20
Tools...................................................................................................................... U1-20
Help ....................................................................................................................... U1-21
Click to View Log ................................................................................................... U1-21
1.6: Dialog Overview....................................................................................U1-22
1.6.1: Project Browser...................................................................................................... U1-23
Project Functions................................................................................................... U1-23
Settings Functions ................................................................................................. U1-23
1.6.2: Database Browser.................................................................................................. U1-24
Browser Components ............................................................................................ U1-24
1.6.3: Run Analysis Dialog............................................................................................... U1-28
How to Run a Batch Simulation............................................................................. U1-29
1.6.4: Job Queue.............................................................................................................. U1-30
Job Queue Icons.................................................................................................... U1-31
Job Queue and the Database Browser.................................................................. U1-33
1.6.5: Delete Logs Window.............................................................................................. U1-33
1.7: Common Button Functions..................................................................U1-34
1.8: File Types and Organization................................................................U1-35
1.8.1: System Resource Files .......................................................................................... U1-35
Project Settings Files............................................................................................. U1-35
Database Files....................................................................................................... U1-35
MPD Files .............................................................................................................. U1-37
Process Files ......................................................................................................... U1-37
Layout Files ........................................................................................................... U1-37
1.8.2: Input Files............................................................................................................... U1-37
Database Files....................................................................................................... U1-37
Model Import .......................................................................................................... U1-37
1.8.3: Export Files ............................................................................................................ U1-38
1.8.4: Execution Files....................................................................................................... U1-38
Temporary Files..................................................................................................... U1-38
Log Files ................................................................................................................ U1-38
1.8.5: Tutorial Files........................................................................................................... U1-39
1.8.6: File Naming Restrictions ........................................................................................ U1-39
1.8.7: File Formats ........................................................................................................... U1-39
1.8.8: Directory Structure ................................................................................................. U1-40
Table of Contents Version 2010
Coventor, Inc. March 18, 2010 v
M



1.8.9: Setting Up a Typical Project................................................................................... U1-41
1.9: Design Considerations ........................................................................ U1-42
1.9.1: Fabrication Description .......................................................................................... U1-42
1.9.2: Layout .................................................................................................................... U1-42
1.9.3: Meshing ................................................................................................................. U1-43
1.9.4: Computation Time Requirements .......................................................................... U1-43
1.9.5: Accuracy ................................................................................................................ U1-44
1.10: Enhancing Productivity ..................................................................... U1-44
1.10.1: Monitoring Execution ........................................................................................... U1-44
Testing the Setup .................................................................................................. U1-45
Reducing Total Computation Time........................................................................ U1-45
Allowing Sufficient Disk Space .............................................................................. U1-45
1.10.2: Managing Files and Directories ........................................................................... U1-46
1.10.3: Efficient Design Iterations .................................................................................... U1-46
Iterated Simulations from within the Solver Modules............................................. U1-46
1.11: Environment Variables....................................................................... U1-47
Setting Environment Variables on Windows.......................................................... U1-47
Setting Environment Variables on Linux................................................................ U1-48
1.12: Interfacing with Third-Party Software............................................... U1-48
Layout Files ........................................................................................................... U1-48
Solid Models and Meshes ..................................................................................... U1-48
ABAQUS ............................................................................................................. U1-48
Text Output ............................................................................................................ U1-48
Graphical Output ................................................................................................... U1-49
Saber ..................................................................................................................... U1-49
Section 2: Material Properties Database
2.1: Access to the MPD................................................................................. U2-2
2.1.1: Database Window Functions ................................................................................... U2-2
2.1.2: Initial Material Property Assignment ........................................................................ U2-3
2.1.3: Importing Material Properties................................................................................... U2-3
2.2: Property Types ....................................................................................... U2-4
2.2.1: Elastic Constants ..................................................................................................... U2-5
2.2.2: Density ..................................................................................................................... U2-8
2.2.3: Stress....................................................................................................................... U2-8
Table of Contents Version 2010
vi March 18, 2010 Coventor, Inc.
2.2.4: TCE.......................................................................................................................... U2-9
TCE and MemMech................................................................................................. U2-9
TCE and Fluidics ................................................................................................... U2-10
2.2.5: Thermal Conductivity ............................................................................................. U2-10
2.2.6: Specific Heat .......................................................................................................... U2-10
2.2.7: Electrical Conductivity............................................................................................ U2-11
Temperature-Dependent Electrical Conductivity ................................................... U2-11
Dopant Concentration-Dependent Electrical Conductivity..................................... U2-11
2.2.8: Dielectric ................................................................................................................ U2-13
Piezoelectric Analysis............................................................................................ U2-13
CoventorWare Coupling Coefficient Conventions ................................................. U2-15
2.2.9: Viscosity................................................................................................................. U2-18
2.2.10: Piezoresistive Coefficients ................................................................................... U2-18
2.2.11: Computing Poly-T Values .................................................................................... U2-21
2.2.12: Computing Table-T Values .................................................................................. U2-21
2.2.13: Custom Properties File......................................................................................... U2-21
*conductivity........................................................................................................... U2-22
*damping................................................................................................................ U2-22
*dielectric ............................................................................................................... U2-22
*elastic ................................................................................................................... U2-23
*electrical conductivity ........................................................................................... U2-24
*expansion............................................................................................................. U2-24
*joule heat fraction................................................................................................. U2-25
*piezoelectric ......................................................................................................... U2-25
*piezoresistive........................................................................................................ U2-26
*specific heat ......................................................................................................... U2-26
Section 3: The Process Editor
3.1: Components............................................................................................U3-1
3.1.1: Process Library ........................................................................................................ U3-1
3.1.2: Process Description ................................................................................................. U3-2
3.1.3: Step Parameters ...................................................................................................... U3-3
3.2: Substrate Step.........................................................................................U3-3
3.3: Modeling Steps .......................................................................................U3-4
3.3.1: Deposit Parameters ................................................................................................. U3-5
Planar Fill and Stack................................................................................................ U3-5
Conformal Shell ....................................................................................................... U3-6
Table of Contents Version 2010
Coventor, Inc. March 18, 2010 vii
M



3.3.2: Partition.................................................................................................................. U3-13
Example................................................................................................................. U3-13
3.3.3: Round Corners....................................................................................................... U3-15
3.3.4: Straight Cut Etch Parameters ................................................................................ U3-17
3.3.5: Statistical Properties .............................................................................................. U3-21
Normal ................................................................................................................... U3-21
Uniform.................................................................................................................. U3-22
Piecewise Linear ................................................................................................... U3-23
3.3.6: Delete Parameters................................................................................................. U3-25
3.4: User-Defined Step Definitions............................................................. U3-25
3.4.1: Etch Steps.............................................................................................................. U3-25
Anisotropic Wet Etch, Frontside, Backside............................................................ U3-26
Generic Wet Etch .................................................................................................. U3-28
Generic Dry Etch ................................................................................................... U3-28
Deep Reactive Ion Etch (DRIE) ............................................................................. U3-28
Release Dry Etch and Release Wet Etch.............................................................. U3-28
Stripping ................................................................................................................ U3-29
3.4.2: Deposition Steps.................................................................................................... U3-29
Thermal Oxidation ................................................................................................. U3-29
Generic PECVD..................................................................................................... U3-29
Sputtering .............................................................................................................. U3-29
Evaporation ........................................................................................................... U3-29
LPCVD................................................................................................................... U3-30
Spin Casting .......................................................................................................... U3-30
3.4.3: Process Sequences ............................................................................................... U3-30
Silicon-On-Insulator (SOI) ..................................................................................... U3-30
Ion Implantation Surface........................................................................................ U3-30
Electroplating......................................................................................................... U3-32
LIGA ...................................................................................................................... U3-33
Lift-Off .................................................................................................................... U3-34
Anodic Glass Wafer Bonding................................................................................. U3-34
Silicon Fusion Bonding.......................................................................................... U3-36
References ............................................................................................................ U3-37
3.5: Foundry Processes .............................................................................. U3-37
3.6: Menus .................................................................................................... U3-37
3.6.1: File ......................................................................................................................... U3-37
File Properties ....................................................................................................... U3-38
3.6.2: Edit ......................................................................................................................... U3-38
Table of Contents Version 2010
viii March 18, 2010 Coventor, Inc.
3.6.3: View ....................................................................................................................... U3-39
3.6.4: Tools ...................................................................................................................... U3-40
Edit Process Steps Library .................................................................................... U3-40
Options .................................................................................................................. U3-40
Foundry Folder ...................................................................................................... U3-41
3.6.5: Window .................................................................................................................. U3-41
3.6.6: Help........................................................................................................................ U3-41
3.6.7: Right Click Menus .................................................................................................. U3-41
3.7: Deposit and Etch Basics......................................................................U3-42
3.7.1: Side Settings.......................................................................................................... U3-43
3.7.2: Conformal Deposit after a Release Step................................................................ U3-44
3.7.3: Basic MEMS Process ............................................................................................ U3-44
3.7.4: Structure of a Process File .................................................................................... U3-46
3.7.5: Building a Process Sequence ................................................................................ U3-46
3.8: Etch Conventions .................................................................................U3-50
3.8.1: Photoresist ............................................................................................................. U3-50
3.8.2: Offset...................................................................................................................... U3-52
3.8.3: Sidewall Angles...................................................................................................... U3-57
Section 4: Foundry Design Kits
4.1: DALSA Semiconductor: MEMS Post-Processing on CMOS...............U4-2
4.1.1: Basic Process Description ....................................................................................... U4-2
4.1.2: Implementation and Process Files........................................................................... U4-3
4.1.3: Contact Information.................................................................................................. U4-5
4.2: INTEGRAMplus QinetiQ Micromachining Processes.......................U4-5
4.2.1: DRIE-based SOI Micromachining Process (DPK) ................................................... U4-5
Basic Process Description....................................................................................... U4-5
Implementation and Process Files........................................................................... U4-6
4.2.2: Metal-Nitride Surface Micromachining Process (MPK) ............................................ U4-7
Basic Process Description....................................................................................... U4-7
Implementation and Process Files........................................................................... U4-8
4.2.3: Polysilicon Surface Micromachining Process (PPK) .............................................. U4-10
Basic Process Description..................................................................................... U4-10
Implementation and Process Files......................................................................... U4-10
4.2.4: Contact Information................................................................................................ U4-11
4.3: SensoNor MultiMEMS Process............................................................U4-12
Table of Contents Version 2010
Coventor, Inc. March 18, 2010 ix
M



4.3.1: Basic Process Description ..................................................................................... U4-12
References ............................................................................................................ U4-13
4.3.2: Implementation and Process Files......................................................................... U4-13
4.3.3: Contact Information................................................................................................ U4-14
4.4: MEMSCAP MUMPs Processes.......................................................... U4-15
4.4.1: MEMSCAP PolyMUMPs ........................................................................................ U4-15
Basic Process Description..................................................................................... U4-15
Implementation and Process Files ........................................................................ U4-16
4.4.2: MEMSCAP SOIMUMPs......................................................................................... U4-17
Basic Process Description..................................................................................... U4-17
Implementation and Process Files ........................................................................ U4-18
4.4.3: MEMSCAP MetalMUMPs ...................................................................................... U4-19
Basic Process Description..................................................................................... U4-19
Implementation and Process Files ........................................................................ U4-20
4.4.4: Contact Information................................................................................................ U4-20
4.5: Tronics 60m SOI-HARM Process ...................................................... U4-21
4.5.1: Basic Process Description ..................................................................................... U4-21
4.5.2: Implementation and Process Files......................................................................... U4-22
4.5.3: Contact Information................................................................................................ U4-23
4.6: SINTEF MoveMEMS PZT...................................................................... U4-24
4.6.1: Implementation and Process Files......................................................................... U4-24
4.6.2: 3-D Modeling and Simulation................................................................................. U4-25
4.7: IMEPKU - Beijing University Polysilicon Process............................. U4-29
4.7.1: Basic Process Description ..................................................................................... U4-29
4.7.2: Implementation and Process Files......................................................................... U4-29
4.7.3: Contact Information................................................................................................ U4-30
Section 5: Glossary
Index ...................................................................................................... IX-1
Table of Contents Version 2010
x March 18, 2010 Coventor, Inc.
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-1
M



Section 1: Using CoventorWare
CoventorWare is an integrated suite of software tools for designing and simulating MicroElectroMechanical Systems
(MEMS) and microfluidics devices. CoventorWare supports two distinct design flows, as shown in Figure U1-1,
which may be used separately or in combination. The ARCHITECT module provides a unique system-level approach
to MEMS design, whereas the DESIGNER and ANALYZER modules work together to provide a more conventional
physical design flow. Both design flows require information about the fabrication process as a starting point, and this
information is provided via a Process Editor and the Material Properties Database.
Figure U1-1 Design Flow
In ARCHITECT, the user assembles a schematic of the MEMS device by selecting and connecting components from
a library of parameterized, MEMS-specific behavioral models. The schematic resembles an electrical schematic, but
the symbols in the schematic represent electromechanical components, such as rigid plates with adjacent electrodes,
flexible beams, and electrostatic comb drives. Upon completing a schematic, the user can simulate various aspects of
its physical behavior. The Scene3D sub-module makes it easy to visualize both the schematic design and animated
simulation results in 3-D. The advantages of this system-level modeling approach include full parameterization of the
design and very fast simulations compared to conventional finite-element analysis. The speed with which designs can
be assembled, varied, and simulated enables rapid investigation of design alternatives, design optimization, and stud-
ies of sensitivity to variations in the fabrication process.
The DESIGNER and ANALYZER modules support a manufacturing-aware physical design flow. The user starts in
DESIGNER by creating a 2-D layout in the Layout Editor. The Solid Modeler uses the layout, in conjunction with the
layer stack information provided in the Process Editor, to automatically build a 3-D solid model. The user then works
in a 3-D view in the Preprocessor to prepare the 3-D model for automatic mesh generation. After a mesh has been
generated, the user can select from a comprehensive suite of field solvers that simulate the physical behavior of
MEMS and microfluidics devices using either the finite-element method (FEM) or boundary-element method (BEM)
or, in the case of coupled electromechanics, a combination of the two methods. Though not illustrated in Figure U1-1,
physical design geometry can be imported from third-party tools in several industry-standard 2-D layout or 3-D solid
Section 1: Using CoventorWare Version 2010
U1-2 March 19, 2010 Coventor, Inc.
model formats. The MEMS-specific features of DESIGNER and ANALYZER provide many advantages over gen-
eral-purpose FEM tools.
The system-level design flow provided by ARCHITECT and the physical design flow provided by DESIGNER/
ANALYZER are complementary. At any point in the design process, the ARCHITECT user can automatically gener-
ate a 2-D layout or a 3-D model that can be used as a starting point for physical design or design verification in
DESIGNER/ANALYZER. Correspondingly the INTEGRATOR module provides a bridge from detailed 3-D physi-
cal simulations in ANALYZER to the ARCHITECT system-level modeling environment. INTEGRATOR can auto-
matically generate reduced-order macromodels from detailed 3-D simulations This can be useful for creating custom
models of MEMS subsystem components, such as intricate anchor or suspension geometries that cannot otherwise be
modeled in ARCHITECT. The resulting custom models can be inserted in any schematic design in ARCHITECT and
are fully compatible with the parameterized MEMS components. Finally, designs can be exported from either
ARCHITECT or DESIGNER to third-party tools in the form of 2-D layouts and/or 3-D solid models in several avail-
able industry-standard formats.
In addition to the MEMS-specific component library in ARCHITECT, CoventorWare comes with other MEMS-spe-
cific content that can jumpstart the design effort. It includes extensive tutorials for all common types of MEMS
devices. There are also Foundry Access Kits consisting of a process file, material properties database, and layout tem-
plate for more than ten independent MEMS foundries. And there are two libraries of standard MEMS packages from
Kyocera and Hymite that make it easy to investigate the effects of packaging on MEMS device performance.
CoventorWare's modules are individually licensed. Typical configurations are DESIGNER and ANALYZER, ARCHI-
TECT and DESIGNER, or All modules. Your site may have licensed only a subset of the modules described in this
manual. If you are unable to access one of the modules, check with your local system administrator to determine
whether a license is available for that module.
1.1: Major Components
A more detailed overview of each of CoventorWares major components is given below.
1.1.1: Function Manager
On starting CoventorWare, the Function Manager window is the first to appear. All CoventorWare functionality is
accessed from the Function Manager. The upper portion of the Function Manager window has icons for accessing the
Material Properties Database and the Process Editor. The lower portion of the Function Manager has navigation tabs
for accessing the ARCHITECT, DESIGNER, and ANALYZER functions. The menu at the top of the window pro-
vides options for file management, help, and several ancillary tools. For detailed information on the Function Man-
ager, see page U1-11.
1.1.2: Material Properties Database
The first step in creating a design, whether you intend to perform system-level simulations with ARCHITECT or
FEM simulations with ANALYZER, is to enter the material properties associated with your fabrication process in the
Material Properties Database (MPD). Only the materials that are in the MPD are accessible in the Process Editor and
available for simulations. For detailed information on the MPD, see the section beginning on page U2-1.
For information on the latest CoventorWare features, please see the Release Notes, which are available in the
Coventor\CoventorWare2010\docs and in the top directory of the installation CD.
CoventorWare comes with a default MPD that is provided for example purposes only. All users are strongly
advised to enter material property values for their specific fabrication process in the MPD because the accuracy of
simulation results depends directly on the accuracy of the material properties.
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-3
M



1.1.3: Process Editor
The second step in creating a design, whether you intend to perform system-level simulations with ARCHITECT or
FEM simulations with ANALYZER, is to enter a description of the sequence of steps involved in the fabrication pro-
cess in the Process Editor. You create the sequence by selecting prototype steps from a Process Library, displayed by
default on the right-hand side of the Process Editor window. Each step has parameters that must be specified. For
deposit steps, for example, you specify the material to be deposited and the deposit depth. As an alternative to speci-
fying a custom process, you may select a complete process sequence for an independent foundry from among those
listed in the Process Library. For detailed information on the Process Editor, see the section beginning on page U3-1.
1.1.4: ARCHITECT
ARCHITECT provides a system-level design and simulation environment for MEMS devices. It is comprised of a
schematic editor (Saber Sketch), a simulator (Saber Simulator), a plotting tool (Cosmos Scope), a 3-D visualizer
(Scene3D), and several libraries of parameterized behavioral models (also known as components). Before starting a
schematic, you must provide an MPD and process file created with the Process Editor. To create a schematic design in
Saber Sketch, you select components from the PEM library and place these components in the schematic view. The
design can be viewed in 3-D at any time using the companion Scene3D module. When the schematic is complete, you
can run a variety of simulations of the design, including static, transient, and harmonic analyses. Simulation results
can be viewed in the form of x-y plots using Cosmos Scope, or the motion of the device can be animated in Scene3D.
The available component libraries include a library of parameterized electromechanical models (the EM library), and
optional libraries of magnetic, optical, and fluidic models. There is also an optional set of templates for generic elec-
trical, mechanical, and control-system components. Most MEMS designs can be completed using only components
from these libraries, but you can also create custom components by using Integrator to extract reduced-order macro-
models, but note these custom models cannot be viewed in Scene3D. All types of components are compatible and can
be combined in any schematic.
For users who want to continue their device design in DESIGNER/ANALYZER or another third-party tool, a 2-D
layout or 3-D solid model can be exported from Scene3D or created using the New from Architect option available
from the Function Managers Designer tab. See page U1-15 for more details. For detailed information on ARCHI-
TECT, see the ARCHITECT Reference on page A1-1.
1.1.5: DESIGNER
DESIGNER provides a manufacturing-aware method for creating 3-D solid models of MEMS and microfluidics
devices. It is comprised of a 2-D layout editor (the Layout Editor), a solid model generator (the Solid Modeler), and a
3-D solid model viewer and editor (the Preprocessor). As a starting point, you must provide a MPD and process file
created with the Process Editor. In addition, you must supply a 2-D layout file that has layers that define all of the
masks required by the process file. There are several options for providing the layout file. One option is to use the
comprehensive editing capabilities in the Layout Editor to draw the shapes that define each mask. Another option is
to draw the layout in a third-party layout tool and import the layout in the GDSII, DXF, or CIF file format. ARCHI-
TECT users have the option to generate a layout from an ARCHITECT schematic by selecting the New from Archi-
tect option on the Designer tab.
When the MPD, process file, and layout file are complete, you click on a button in the Function Manager that causes
the Solid Modeler to build a 3-D solid model. The resulting 3-D model is automatically loaded in the Preprocessor for
viewing and, if desired, preparation for meshing and simulation in ANALYZER. The Preprocessor includes export
and import functions than enable exchange of 3-D solid model files with third-party CAD tools, such as SolidWorks
and UGS I-deas.
Currently, microfluidics schematic designs cannot be viewed in Scene3D or extracted as a 2-D layout or 3-D
model.
Section 1: Using CoventorWare Version 2010
U1-4 March 19, 2010 Coventor, Inc.
For more information on DESIGNER, see the DESIGNER Reference on page D1-1.
1.1.6: Meshing
CoventorWare's automatic mesh generations capabilities are incorporated in the Preprocessor, which serves as a
bridge between DESIGNER and ANALYZER. Once a solid model is loaded in the Preprocessor, you select which
layers are to be meshed. The Preprocessor automatically groups the layers into regions based on their adjacency. You
then select the type of mesh to be generated on each region and can set local refinement options. The types of meshes
include surface meshes with triangular or quadrilateral faces and volume meshes with tetrahedrons or hexahedrons
(bricks). Several different methods are available for hexahedrons, including extrusion, Manhattan (for near orthogo-
nal geometries) and mapping (for geometries that can be decomposed into 6-sided volumes). You can select any
layer, part, face, edge or vertex and specify local refinement options. A Quality Query in the Preprocessor allows you
to view a variety of mesh statistics to assess the quality of the mesh, and visualize "bad" elements (elements with
characteristics that exceed user-settable thresh holds). Generating a valid, high-quality mesh is a pre-requisite for
using any of the field solvers in ANALYZER.
Meshes generated in third-party software can be imported to CoventorWare in I-deas Universal file (.unv) format,
PATRAN mesh file format, ANSYS .ans, cdb, or .rst formats, or ASCII Stereolithography (.stl) file format. Meshes
from older versions of CoventorWare that are in the .mbif format can also be imported.
For more information on CoventorWares meshing capabilities, see the ANALYZER Reference beginning on page R2-
1.
1.1.7: ANALYZER 3-D Field Solvers
ANALYZER provides a comprehensive suite of 3-D solvers, including solvers for electrostatics, mechanics, coupled
electromechanics, thermomechanics, and microfluidics. With these solvers, you can perform analyses that incorpo-
rate or compute the following types of physical behavior and effects:
capacitance and electrostatic charge;
deformations from applied pressures or forces;
coupled electromechanical behavior, including pull-in and lift-off voltage;
mechanical and coupled electromechanical behavior with full contact boundary conditions;
piezoelectric effects;
residual stress (from the fabrication process);
modal analyses of the natural vibration frequencies of MEMS devices;
harmonic analyses of MEMS devices;
steady-state electrothermal (Joule heating), thermomechanical, and electrothermomechanical behavior;
transient mechanical and thermomechanical behavior;
thermal boundary conditions, such as film convection, radiation, and heat flux;
Coupling of package deformation resulting from thermomechanical effects to mechanical behavior of a
MEMS device.
piezo-resistive sensing of mechanical deformation;
inductance of electrically conductive components, such as package leads and wire bonds;
gas damping effects on MEMS device behavior;
fluidic solutions with static or transient compressible or incompressible flows;
fluidic solutions with electrokinetic flows and diffusion in microchannels;
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-5
M



fluidic solutions involving species separation using phased voltage channel switching;
fluidic solutions for multi-phase flows involving droplet ejection or bubble movement; and
fluidic solutions for chemical reactions.
Summaries of simulation results are available in tables and X-Y plots. Details of simulation results can also be
viewed in 3-D using the Visualizer, with numerous visualization options.
For more information on the MEMS ANALYZER solvers, see page R1-1. For more information on the Fluidics solv-
ers, see page F1-1.
Parametric Study
A parametric study is an option for all field solvers that enables users to vary one or more parameters over a range
and obtain a solution for each value in the range. The Parametric Study option is available during the solver setup
sequence for each solver. The parameters that can be varied during a parametric study include geometric dimensions,
material properties, and boundary conditions such as pressure, temperature, and voltage. For more information, see
page R9-1.
Visualizer
The solver output for most MEMS models includes a significant amount of data for analysis and post-processing. The
Visualizer tool supplements this capability by enabling users to map these results graphically onto the original model
and visually analyze the solution. The Visualizer enables viewing of electrostatic fields, mechanical deformations,
stresses, thermal variations, temperature gradients, pressures, current densities, and many other parameters. Selected
parameters are color-mapped onto the 3-D model, allowing a complete surface analysis of the model after the solution
is complete. An adjustable slice plane and selected probing of interior bricks allow the entire volume to be visualized.
The Visualizer can show a timed sequence of incremental changes to a model from a parametric study and can simu-
late and animate the modal vibrations from a modal analysis solution. It includes its own animation module for cap-
turing and replaying a desired sequence. A print module captures the Visualizer screen to an output file in a variety of
resolutions.
The user can adjust virtually every aspect of the 3-D view, including lighting effects, perspective, shading, line
widths, font sizes, and scale positions, to satisfy individual preferences.
For more information on the Visualizer, see the section beginning on page R10-1.
Query Manager
In addition to the predefined summary tables and X-Y plots that are produced by each solver, the user can define custom
queries that provide additional summary data on each analysis. The Query Manager is accessible from the Analysis
Results window. Queries can be performed on device surfaces, volumes, regions specified by coordinates, or between
surfaces. For fluidics solutions, queries may also be performed on a specified point, volume, or elliptical region.
For more information on the Queries function, see the section beginning on page R9-14.
1.1.8: Integrator
Integrator consists of four solvers, available from the Analyzer tab of the Function Manager, that have the capability
to extract reduced-order macromodels for use in system-level simulations in ARCHITECT. Extracted macromodels
are saved in directories that can be accessed from Saber Sketch, allowing placement of their corresponding symbols
in a manner nearly identical to that used for components from the parametric model libraries. Note that these custom
macromodels are for a specific design. The solvers that comprise Integrator include
SpringMM: extracts reduced-order models of linear double-ended and non-linear single-ended mechanical
springs, electrostatic springs, and electromechanical springs;
InertiaMM: extracts the centroids and moments of inertia of the movable parts of a device;
Section 1: Using CoventorWare Version 2010
U1-6 March 19, 2010 Coventor, Inc.
DampingMM: extracts of damping coefficients resulting from squeezed film, slide film, and Stokes flow
effects.
FlowMM: extracts the resistance and inertance of a two-port fluidic device of arbitrary geometry (e.g. a
microchannel).
For more information on the Integrator suite of tools, see the INTEGRATOR Reference on page N1-1.
1.2: Document Conventions
Conventions followed in the CoventorWare documentation are noted below.
1.2.1: Font Conventions
The table below outlines the font conventions used in CoventorWare manuals.
1.2.2: Icons
Additional information or information of special note is denoted by an icon:

Font Function
Bold Names of buttons
Italics File names, directory paths, icon names, field entries, and menu or
drop-down selections (implies that there is more than one option)
Courier Command lines (text entered at a terminal prompt)
Underline Hyperlinks to related information
The stop sign highlights critical information or instructions that you must follow in order to obtain proper results.
The green arrow highlights information or instructions needed to understand the immediate topic.
The lightbulb highlights supplemental information concerning the section topic or directs the user to other sections
with related topics.
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-7
M



1.2.3: Page Numbering
Each volume in the CoventorWare manual set has a unique letter incorporated into its page number. This letter simpli-
fies cross-references and index entries among the manuals. The table below outlines the lettering convention.
1.2.4: On-Line Help
This entire manual set, with hypertext links to cross-references, table of content entries, and index entries, is available
in Adobe Acrobat PDF format, which may be viewed in Adobe Acrobat Reader 7.0 for your LINUX or Windows
platform. The on-line manuals are distributed on the Installation CD and may be accessed from the Help menu in the
Function Manager window, or they may be requested by contacting a Coventor Sales office. The Reader software is
included on the CD or may be downloaded from the Adobe Web site at www.adobe.com.
Select software set-up dialogs have help icons in the lower right corner. Clicking on one of these icons opens the doc-
umentation to the location that has the relevant window information. For instance, if you are in the MemMech Sur-
faceBCs window and would like to access information on the various options in this window, click on the help icon in
this window to open the documentation at the location of the MemMech SurfaceBCs reference material.
The software manual set is the best information tool available for providing guidelines on using the software.
Detailed user requirements, extensive tutorial examples, a complete quick reference section, and other aids appear
throughout the volumes to help you find the information you need quickly and to easily apply it to your application.
Each of the manuals is available in PDF format and can be accessed while running the software by selecting Help >
Contents from the Function Manager menu.
The Master Help option, available from the Help menu, is designed to help you in several ways:
If you have a certain task in mind, Master Help will direct you to the software module that will aid in that
task.
It gives an overview of each software module, with links to reference or tutorial information on that module.
It allows you to search the entire pdf documentation set for specific information.
The Coventor support staff is also available for technical support. Having a working knowledge of your file organiza-
Letter
Designation
Document Title
A CoventorWare ARCHITECT Reference
MEMS and Microsystems System-Level Design
D CoventorWare DESIGNER Reference
MEMS and Microsystems Physical Design
F CoventorWare ANALYZER Microfluidics Reference
Microfluidics Analysis
M CoventorWare Microfluidics Design and Analysis Tutorials
Microfluidics Analysis
N CoventorWare INTEGRATOR Macromodeling Reference
Macromodel Extraction and System Simulation
R CoventorWare ANALYZER Reference
MEMS and Microsystems Analysis
T CoventorWare MEMS Design and Analysis Tutorials, Vol. 1 and 2
MEMS and Microsystems Analysis
U Using CoventorWare
Section 1: Using CoventorWare Version 2010
U1-8 March 19, 2010 Coventor, Inc.
tion, log file contents, error messages, and other output from the software helps them get you through your questions
and possible problems in the most efficient way.
1.2.5: Other Conventions
Tutorials
The tutorials are designed to allow both advanced and new users to pace comfortably through the procedures. The
Advanced User Procedure column in the tutorial steps includes concise, but complete steps on completing the tutorial
sequences. All users should first attempt to complete the tutorials by reading only this column (and any accompany-
ing graphics), if possible. The short explanations provide complete summaries and allow you to think more about the
problem setup and results rather than on the mechanics of clicking buttons and setting fields. For users unfamiliar
with concepts or with the software interface, the Detailed User Procedure column offers much more explanation on
exactly how to accomplish the objectives of the Advanced User Procedure column. It also offers summary notes for
many of the lettered steps (indicated with an arrow directly under the step), which explain why specific settings are
used or why certain results are displayed.
Screen Images
For consistency, images from the Windows operating system are used in all illustrations. The appearance of Coven-
torWares user interface is virtually identical for the Linux and Windows XP platforms. There are only some superficial
differences in attributes such as window borders and fonts, which are caused by the platform software.
1.2.6: Other Information Resources
You can obtain additional information on CoventorWare and MEMS devices through these sources:
Our web site at www.coventor.com, which contains up-to-date product and application information.
Data sheets for each of the main CoventorWare modules.
1.3: CoventorWare Conventions
Creating a successful design depends in part on understanding CoventorWare conventions. The coordinate and design
unit conventions are outlined in this section.
1.3.1: Coordinate System Conventions
The software uses a standard orientation for specifying X, Y, and Z coordinates for 3-D modeled objects. The surface
of the ground plane is oriented in the X and Y direction. The Z axis is perpendicular to this surfacewhich is the Z=0
reference point. Objects above this surface take on a positive Z value. These conventions are summarized in Figure
U1-2.
Figure U1-2 Three-Dimensional Axis Orientation Conventions
Z=0
X
Y
Z
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-9
M



1.3.2: Units of Physical Quantities
CoventorWare often displays the values of input and output quantities without showing the units. However consistent
units are used throughout the software. Table U1-1 lists all the numerical quantities that appear in CoventorWare, the
commonly used symbol and SI (International Standard) units for each quantity, and the units used in CoventorWare.
Table U1-1 CoventorWare Units
Quantity Symbol
ARCHITECT units
(kg/m/s/A/K)(S.I. units)
DESIGNER and ANALYZER units
(kg/m/s/pA/K)
Acceleration a m / s
2
m / s
2
m / s
2
Angular acceleration
1
rad/s
2
degrees/sec
2
Angular input
2
radians degrees
Angular velocity rad/s degrees/sec
Capacitance C F A
2


s
4
/ (kg m
2
) pF pA
2

s
4
/ (kg
m
2
)
Charge Q C A

s pC pA

s
Conductivity (Electrical)
3
S / m pS / m pA
2
s
3
/ (kg m
3
)
Conductivity (Thermal) k W / mK (kg m) / (K s
3
)
pW / m K (kg m) / (K s
3
)
Current (Electrical) A pA pA
Density kg / m
3
kg / m
3
kg / m
3
Diffusivity m
2
/s m
2
/s m
2
/s
Flow m
3
/ s m
3
/ s m
3
/ s
Force F N (kg m) / s
2
N (kg m) / s
2
Frequency f Hz 1 / s Hz 1 / s
Heat Flux q W / m
2
kg / s
3
pW / m
2
kg / s
3
Length l m m m
Mass m kg kg kg
Moment of Inertia kg m
2
kg m
2
kg m
2
Piezoresistive Coefficients
11
,
12
,
44
MPa
-1
Poissons Ratio
Power P W (kg m
2
) / s
3
pW (kg m
2
) / s
3
Pressure p Pa kg / (m s
2
) MPa kg / (m s)
2
Specific Heat C
p
J / kgK m
2
/ (K s
2
) pJ / kgK m
2
/ (K s
2
)
Stress
ij
Pa kg/(m

s
2
)
MPa kg /(m s
2
)
Thermal Coefficient of
Expansion
TCE 1 / K 1 / K 1 / K
Velocity v m / s m / s m / s
Viscosity (Dynamic) Pa s MPa s kg / (m s)
Section 1: Using CoventorWare Version 2010
U1-10 March 19, 2010 Coventor, Inc.
1
Note that degrees are decimal degrees (degrees/minutes/seconds).
2
Note that in ARCHITECT, radians are used for rotations on wires and in Saber models, but for ARCHITECT para-
metric models, angles are input as degrees.
3
Note that it is often easier to find the electrical resistivity in meters*ohms for a material, rather than the electrical
conductivity. The electrical conductivity can be computed as the reciprocal of the resistivity:
To convert to ANALYZER units (pS/m), multiply the result by 10
6
.
1.3.3: Numerical Values Displayed in User Interface
In some locales, a comma is used as the decimal separators. In the CoventorWare interface, the period must be used
as the decimal separators.
1.3.4: Units Displayed in User Interface
In all software screens where units do appear, English rather than Greek characters are used to represent units. 1-2
lists these unit labels:
Table U1-2 CoventorWare Unit Display
1.4: Licensing
The specific modules licensed from Coventor determine whether or not you have access to the modules described in
this document. If your license does not include one or more modules, those options will be grayed out.
FLEXnet is used to manage CoventorWare licenses. Once the software is installed, user interaction with FLEXnet is
minimal.
If you have problems obtaining licenses when starting or running CoventorWare or some of its components, refer to
the Troubleshooting section of the Installation Instructions.
Voltage (Electrical) V W / A (kg m
2
) / (A s
3
)
V (kg m
2
) / (pA s
3
)
Youngs Modulus E Pa kg/(m

s
2
)
MPa kg / (m

s
2
)
Unit micro pico femto mega kilogram farad volts newton pascal watt kelvin
Label u p f M kg F V N Pa W K
Quantity Symbol
ARCHITECT units
(kg/m/s/A/K)(S.I. units)
DESIGNER and ANALYZER units
(kg/m/s/pA/K)
1
ohm meter
------------------------------
S
meters
----------------- =
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-11
M



1.5: Function Manager Overview
All CoventorWare components are controlled and started from the Function Manager, shown in Figure U1-3. The
upper half of the window displays the active process and MPD files and offers access to the Process Editor and the
MPD Editor. Because the process and MPD files serve as the basis for any design, they remain visible no matter
which tab is active. Each tab on the Function Manager enables a specific software tool. The tab groups are logical
divisions of tasks performed within the software: device simulation using a top-down methodology (the Architect
tab), device creation and device modeling of a design extracted from top-down simulation or for FEM modeling (the
Designer tab), and device verification and simulation using FEM modeling (the Analyzer tab). Depending on the bun-
dled module configuration you have purchased from Coventor, you may not have access to all the modules described
in this manual.
This section gives a description of each tool and points you to more extensive documentation.
Figure U1-3 Function Manager
1.5.1: Materials
The Materials field specifies a database file that stores all the material properties used by the solvers during the com-
putation phase. This database file has a .mpd extension. A generic MPD file is included with the installation and is
placed in each users Shared\mpd directory. A Material Properties Database (MPD) may be included with a tutorial
directory, and foundry specific files may be provided by foundries as part of their design kits.
When a new model is created, material properties are automatically assigned to the parts based on the material name,
which was assigned in the Process Editor. Before creating a layout and a process file, check that the MPD has the
desired materials and that these materials have the desired properties assigned to them. If you want to change any val-
ues in the MPD file, consider copying the default MPD file and saving it under another name, then saving the changes
to the new file, rather than overwriting the values in the original MPD.
The MPD Editor icon to the right of the Materials field opens the Edit Materials window, as seen in Figure U1-4. This
window provides access for viewing existing properties and changing or adding shared default material properties to
the MPD.
Starts the Material
Starts the Process Editor
Navigation tabs
Properties Editor
Section 1: Using CoventorWare Version 2010
U1-12 March 19, 2010 Coventor, Inc.
Figure U1-4 MPD Editor
Because the Material Properties Database is shared by ARCHITECT, DESIGNER, and ANALYZER, its reference is
included in this manual. For more detailed information on the Material Properties Database and the material proper-
ties associated with it, see page U2-1.
1.5.2: Process
This Process field specifies the file that contains the deposit and etch sequence needed to build a device. The process
file is stored in a Devices subdirectory of the project_name directory. Clicking on the Process Editor icon from the
Function Manager opens the Process Editor, shown in Figure U1-5.
The Material Properties Editor can also be accessed from within the Preprocessor when a part is selected. The Edit
> Properties menu opens the Properties dialog box, which has an icon link to the MPD Editor. When the MPD is
accessed from the Function Manager, changes are written to the MPD file. If access is through the Preprocessor,
changes will only apply to the model displayed.
Material properties with more than one
value are accessed from an Edit window.
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-13
M



Figure U1-5 Process Editor Window
The Process Editor includes the Process Library, the Process Description, and the Step Parameters panes. The Process
Library includes numerous process steps from which you can select user-defined process steps, generic modeling
steps, and foundry-developed processes. The Process Description displays each step in its own row in a spreadsheet
format. Each row lists settings or parameters that are used in creating the step. When a process step is selected, the
Step Parameters window becomes active; from this window you can change step parameters.
For substrate, deposit, and delete steps, you can select a material from the MPD, which stores properties of the mate-
rials used in a fabrication process. Silicon, polysilicon, silicon nitride, and aluminum are typical examples of process
materials. The properties associated with the materials include strength, density, conductivity, and thermal character-
istics. The materials selected from the database in the process flow are used throughout the simulation process.
For etch steps, you can select or create a mask name. These masks will become active masks in the 2-D Layout Edi-
tor.
CoventorWare is designed to be process-independent. This allows the software to accurately model many different
types of MEMS processes, even if they are run on different fabrication lines. In fact, the software can accommodate a
design that is transferred to a new or different process line by recharacterizing the mask set flow.
Because the Process Editor is used by ARCHITECT, DESIGNER, and ANALYZER, its reference is included in this
manual. For a more detailed information of the Process Editor function, see page U3-1.
Section 1: Using CoventorWare Version 2010
U1-14 March 19, 2010 Coventor, Inc.
1.5.3: Architect Tab
This tab allows access to the schematic editor and simulator used for system-level simulation. From the Schematic
file field, you can select a schematic file to display in the schematic editor or can choose to create a new one. Clicking
on the icon to the far right of the Schematic field launches the schematic editor. At this moment, process and MPD
information relevant to ARCHITECT is read from the process and MPD files that appear in the Function Manager
window above the Architect tab. This information is then saved with the selected schematic so that it is accessible by
ARCHITECT.
The Function Manager will maintain this link between the process/MPD information and the schematic as long as the
schematic remains open in the schematic editor. The Function Manager will monitor for changes made to the process
or MPD files and update the stored information for the open schematic. For example, if the current process or MPD
file is edited and then saved, the information is automatically updated in the schematic. Or, if a different process or
MPD file is chosen in the Function Manager, a dialog box will appear asking if you would also like to change the file
used for the currently open schematic. This link continues to work even when multiple schematics that use the same
process and MPD files are opened through this tab. However, if schematics with different process files are open at the
same time, their process files must have identical lists of deposit layers.
Schematic
This field displays the active schematic file. To change the active file, click on the arrow beside the Schematic file
field to select another schematic in the project directory, or click on the Browse icon to the right of the field to
select a file in any directory. The file selected must have an ai_sch extension.
Start Icon
This icon starts the schematic editor. There are four options for starting the Schematic Editor, accessed from the
arrow to the right of the icon:
New from Process: Starts the schematic editor and reads the process and MPD information described above.
The schematic editor opens with the default reference frame and Coventor symbol placed on the canvas.
New for Fluidics: The schematic editor opens and creates a new file that does not have the default reference
frame.
New Blank: Forces the schematic editor to start a new file even if there is a schematic file named in the Sche-
matic field. The editor opens without the reference frame and Coventor symbol on the canvas.
Browse to select file
Start schematic editor
Synchronize
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-15
M



Open: Opens the schematic specified in the Schematic file field and checks for updates to the process and
MPD files.
Data Associations
These read-only fields display the process and MPD files that were used in the creation of the schematic shown
in the Schematic field. When the user opens a schematic created by another user or on another machine, this in-
formation may not be available. If there are no data associations, they will be automatically created when the user
first opens the schematic.
Synchronize
This icon is used to associate the process and MPD files displayed in the Function Manager with the selected sche-
matic. This function can be used to update a schematic if the process or MPD file has been changed.
For more information about the ARCHITECT suite, see the CoventorWare ARCHITECT Reference on page A1-1.
1.5.4: Designer
Clicking on this tab opens a window that allows access to the 2-D layout tool and the Preprocessor (for solid model-
ing and meshing). The functions on this tab take you through all the steps of device creation: creation of a 2-D model
in the Layout Editor, creation of a solid model, and creation of a mesh that can be used for FEM simulation.
Layout Editor
CoventorWare has its own 2-D drawing and editing tool, accessed from the Start Layout Editor icon to the right of the
Layout file field. All layouts created in the Layout Editor proceed through a conversion process and are fully compat-
ible with the rest of the software.
Layout
This field displays the file that will be opened in the Layout Editor. A previously created file may be selected for
opening, or a new file may be named. All the cat files from the active project will be listed in the drop-down menu.
The drop-down menu will also include any files in the \Design_Files\Shared\Layout_Template directory. To spec-
Access to 2-D
Layout Editor
Access to
Preprocessor
and Meshing
options
Solid model options
Section 1: Using CoventorWare Version 2010
U1-16 March 19, 2010 Coventor, Inc.
ify which file to open, click on the drop-down menu arrow to the right of the field to select a file that is in the
project_directory\Devices directory, or click on the Browse icon to open a native layout file (*.cat), a GDS file, a
CIF file, DXF file, or netlist (*.sin) file in another directory. The icon on the right starts the Layout Editor.
Top Cell
A top cell may be selected when opening a project, and this cell will appear on the canvas when the Layout Edi-
tor is started.
Start Layout Editor Icon
When selecting files to be opened in the Layout Editor, you have these options from the icons drop-down menu:
New from Process: When this option is selected, the masks specified in the process file are defined as the
layers in the 2-D layout file (.cat).
New from Architect: This option becomes available if a schematic is selected in the Architect tab. This
option allows the Layout Editor to open a 2-D layout (in GDSII format) that was created from an ARCHI-
TECT schematic. Note that to use this option, you must have opened the schematic in Scene3D or selected
Architect > Export for Designer from within the ARCHITECT/SaberSketch window.
New Blank Layout: This option allows you to create a layout without first defining a process.
New from Template: This option allows you to import layer definitions from another cat file.
Open Layout: When this option is selected, the Layout Editor opens to the file specified in the file field.
Clicking on the Layout Editor icon opens the window seen in Figure U1-6:
Figure U1-6 2-D Layout Editor
Other options for generating a 2-D layout include:
Imported layouts: Users can import designs from their own 2-D layout tools. Any editor capable of generat-
ing an output file in CIF, DXF, or GDSII format qualifies. The software handles the appropriate file compati-
bility considerations.
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-17
M



Extracted layouts: For users with ARCHITECT software, parametric library models can be extracted to a 2-
D layout using Scene3D .arch3d files. With this method, users can use the top-down design approach to
design and analyze the overall model, and then automatically create corresponding 2-D layout.
For detailed information about using the Layout Editor, see CoventorWare DESIGNER Reference on page D1-1.
Solid Modeling
Model/Mesh
This field displays the model that will be opened in the Preprocessor. A previously created model may be selected
for opening, or a new model may be named for model creation. To specify which model to open, click on the drop-
down menu arrow to the right of the field to select a model that is in the project database or click on the Browse
icon to open or import another model. The Browse icon opens the Database Browser window, which is described
on page U1-24.
Start Preprocessor
Click on this icon to start the Preprocessor or click on the arrow beside the Start Preprocessor icon to select one
of these menu options from the drop-down menu:
New: Choose this option to create a model from a specified process and 2-D layout file. A Input dialog win-
dow will open and will prompt you to name the model to be created. This option is the same as the create new
model option available from the Model/Mesh drop-down menu.
New from Architect: This option becomes available if a schematic is selected in the Architect tab. This
option allows the Preprocessor to open a 3-D model that was created from an Architect schematic. Note that
to use this option, you must have opened the schematic in Scene3D or selected Architect > Export for
Designer from within the Architect/SaberSketch window.
Open: Choose this option to open the model specified in the file field. To use this option, the model must
have been created in the Preprocessor.
Rebuild: Choose this option to rebuild, and therefore overwrite the model specified in the file field.
Options
Apply Offset Values: Applies offset values from the process file when building the model. On selecting a
regular layout file, this box is checked. On selecting a layout file that has been extracted from a schematic,
the box is automatically unchecked.
Create Inverse of Device (Negate): This function creates a 3-D model of the empty space around (and in
between) the solid materials. See the tutorial section starting on page M5-17 for an example.
Clip Device with Mask: This feature creates a 3-D cross-section of a model. The model is clipped with the
mask layer selected from the drop-down menu to the right of the Clip Device option. Use this feature to build
a portion of a design so only parts of interest appear in the 3-D model or if the design is symmetrical, build
only a portion of the design.
Split Layer: This option breaks up a layer into multiple parts. Use the first drop-down menu to select the
layer to be split, and use the second drop-down menu to select the mask layer to split the first layer.
Use this option to create a patch on a large region for load application. You can also use this option to create
different meshes on a layer; this facilitates use of links and ties during meshing when different grades of mesh
are being used on the same layer of the model.
Section 1: Using CoventorWare Version 2010
U1-18 March 19, 2010 Coventor, Inc.
1.5.5: Analyzer
Clicking on the Analyzer tab opens a window that allows access to the solvers. From this tab you can run a MEMS or
microfluidics solver, view the results from a previous run, or view the model in the Preprocessor.
.
Domain
The type of domain selected determines the type of solvers that appear in the Solver (effects) drop-down menu.
There are two domain options:
MEMS: Enables the core electrostatic, mechanical, and electromechanical solvers, as well as special domain
solvers for modeling piezoresistance, inductance and resistance, optics, and package thermomechanical inter-
action. Solvers for creating reduced-order models for MEMS mixed-mode system-level simulation are also
enabled.
Microfluidics: Enables the general design of integrated chemical and biochemical analysis or synthesis sys-
tems, and simulates chemical transport in electrophoretic, electroosmotic, and pressure driven systems. It
also enables a fluidics macromodeling solver.
Solver (effects): MEMS
If the MEMS domain option is selected, the list of options detailed below appears in the Solver drop-down menu.
The number of solvers that appear in the drop-down menu is determined by the users license agreement. The list
may include any of the following:
MemElectro (electrostatic and electroquasistatic): Solver documentation begins on page R3-1.
MemMech (mechanical, thermomechanical, and piezoelectric): Solver documentation begins on page R4-1.
CoSolveEM (coupled electromechanical): Solver documentation begins on page R5-1.
HarmonicEM (coupled electromechanical-frequency domain): Solver documentation begins on page R6-1.
MemPZR (piezoresistance): Solver documentation begins on page R8-1.
MemHenry (inductance and resistance): Solver documentation begins on page R7-1.
SpringMM (electrostatic, mechanical, or electromechanical): Solver documentation begins on page N2-1.
DampingMM (squeeze-film or free-space fluid damping): Solver documentation begins on page N4-1.
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-19
M



InertiaMM (proof-mass or plate inertia): Solver documentation begins on page N3-1.
Solver (effects): Microfluidics
If the Microfluidics domain option is selected, the list of options detailed below appears in the Solver drop-down
menu. The number of solvers that appear in the drop-down menu is determined by the users license agreement.
The list may include any of the following:
MemCFD (general flow, fluid mixing, thermal): Solver documentation begins on page F2-1.
NetFlow (electrokinetic): Solver documentation begins on page F3-1.
SwitchSim (electrokinetic with field switching): Solver documentation begins on page F4-1.
ReactSim (multi-species chemical reaction): Solver documentation begins on page F5-1.
Bubble-DropSim (multi-phase hydrodynamics): Solver documentation begins on page M7-1.
MemFSI (fluid-structure interaction): Solver documentation begins on page F7-4.
FlowMM (flow resistance and inertance): Solver documentation begins on page N5-1.
Model/Mesh
This field displays the model that will be simulated using the selected solver. To specify which model to simulate,
click on the drop-down menu arrow to the right of the field to select a model that is in the project database, or click
on the Browse icon to open or import another model. The Browse icon opens the Database Browser window, de-
scribed on page U1-24.
Start Preprocessor
This icon allows you to view a model before simulating. From within the Preprocessor you can view the mesh,
rename patches, and rename conductors.
Analysis Field
This field allows you to select the set of analysis results to be used by the View Analysis Icon option described
below. If you run a solver to create new results, the Save Analysis window opens before the simulation starts and
prompts you to save the results under a new name. The choices in the Analysis Field drop-down menu are the user-
assigned names of all previous analyses for this project and the create a new analysis option, which represents the
next analysis to be run.
View Analysis Icon
This icon allows access to a solvers setup dialogs or to analysis results from a previous run. The actions of this
icon can be accessed directly from its drop-down menu options:
Solver Setup: Choosing this option launches the setup dialogs of the selected solver. If create a new
analysis is selected in the Analysis Field, the values of the current project settings are used as default val-
ues for the setup. If the solver is being launched for the first time in a project, the default options for the
solver are loaded.
Load Setup from Previous Analysis: If a previous analysis is selected in the Analysis Field, then the set-
tings used from that analysis are loaded into the solvers Settings and boundary conditions dialogs. Thus
by choosing a previous analysis, you can view the settings from a previous run, and optionally launch a
new run after modifying those settings. Note that loading these previous settings overwrites the current
project settings.
View Results: This option allows you to view previous simulation results designated in the Analysis
Field. If this option is selected, the Analysis window will open for access to the numerical, graphical, and
3-D results stored in the analysis directory designated in the Analysis field.
The number of solvers that you can access is dependent on the specific licensed configuration of CoventorWare.
Section 1: Using CoventorWare Version 2010
U1-20 March 19, 2010 Coventor, Inc.
Clicking on the View Analysis icon will launch Solver Setup if create a new analysis is selected in the Analysis
Field, otherwise it will launch the View Results functionality.
1.5.6: Menu Functions
The menu options appear at the top of the Function Manager and are accessible from any selected tab.
File
Clicking on this menu option at the upper left portion of the window opens a drop-down menu with file maintenance
and management tasks. Users can quit the software from this button menu.
Projects
Opens a dialog that allows you to select an existing project, create a new project, import a tutorial project, or im-
port a Kyocera or Hymite package. For more information on this dialog, see page U1-23. The keyboard shortcut
for opening this dialog is Alt + P.
New
Creates a new settings file for the current project. The software first displays a confirmation window that asks,
Do you want to save current settings? Then it clears all previous project settings and creates a new settings file
with a default name ProjectSettings1.mps. The keyboard shortcut for creating a new settings file is Alt + N. To
save this new project settings file with another name, use the File > Save As function.
Open
Opens an existing settings file. The software opens a dialog window that displays all available settings associated
with the current project.The keyboard shortcut for opening this dialog is Alt + O.
Save
Saves the current settings file; includes tool settings, boundary conditions, and other window settings to the
active settings file. The keyboard shortcut for saving a file is Alt + S.
Save As
Opens a dialog for saving the current settings file name under a new name.
Exit
Exits the software. The keyboard shortcut for exiting CoventorWare is Alt + X.
Tools
Fluidics Mesh Generators
Opens the Mesh Generators module. This module allows you to select a mesh shape and parameters, then generate
a meshed model. For more information on this module, see the CoventorWare ANALYZER Microfluidics Refer-
ence, beginning on page F9-1.
View Log Window
Opens the log window, which displays software progress. Any errors that occur will be displayed in this window.
Visualizer
This option opens the 3-D Visualizer. The keyboard shortcut for opening the Visualizer is Alt + 0.
Job Queue
This option opens the Job Queue dialog, which allows the user to run simulations in the background, while con-
tinuing to work in the Function Manager. For more information on this dialog, see page U1-30.
User Settings
Accesses the user settings for work directory, shared directory, temp directory, and licenses location. Each indi-
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-21
M



vidual user configures these settings the first time he runs the software. These settings can be changed from this
menu option. The keyboard shortcut for opening the User Settings dialog is Alt + U. They can also be edited from
the .coventorware2010.rc file located in C:\Documents and Settings\user_name on Windows and in the users
home directory on LINUX. For more information selecting user settings; see page 2-16 of the installation instruc-
tions.
Help
The Help menu provides access to the online documentation (in PDF format). The Help menu has these options:
Master Help: Opens an online PDF designed to familiarize you with CoventorWare and to help you find the
relevant documentation for a desired task.
Using CoventorWare: Opens the online PDF for this document, which provides an overview of Coventor-
Ware and detailed information on functions common to the entire software suite.
Search: Accesses the Acrobat search engine; can be used to search the entire CoventorWare documentation
set and documentation for third-party software bundled with CoventorWare.
Contents: Opens an online PDF that lists all the manuals in the documentation set.
Reference: Opens an online PDF that lists the available reference material for the solvers, with active links to
their locations in the documentation.
Tutorials: Has two submenus: MEMS Tutorials and Microfluidics Tutorials. Each submenu opens an online
PDF that lists the available tutorials, with active links to their locations in the documentation.
Installation Instructions: Opens an online PDF containing CoventorWare installation instructions for Win-
dows and LINUX operating systems.
About: Opens a window that lists the current version of the software. The keyboard shortcut for opening this
window is Alt + A.
Click to View Log
Clicking on the arrow at the bottom left corner of the Function Manager opens an attached window that shows result
and diagnosis information for the Solid Modeler. This window is different from the CoventorWare log window that
opens when CoventorWare is started, which shows all of the software activity. Use the main CoventorWare log win-
dow to monitor the status of the design and/or simulation. A log file records all log window information and appears
as the file CoventorWare.log in the users Design_Files\Logs directory.
Additional documentation for Tecplot 360 Visualizer is available from its menubar Help menu from individual
dialogs. Additional information for Saber is available in Coventor\CoventorWare2010
\architect\SaberDesignerInstall\doc\pdf_docs.
Section 1: Using CoventorWare Version 2010
U1-22 March 19, 2010 Coventor, Inc.
1.6: Dialog Overview
All user interaction is through the dialog-based graphical interface. Dialogs open from other dialog buttons or menu
bar functions. Figure U1-7 illustrate the basic types of dialogs. Dialogs specific to each solver are explained in their
designated reference sections. This section explains dialogs that are not specific to a particular solver.
Figure U1-7 Sample Screen Types
The Function Manager provides
project select dialog
navigation to all parts of the software
Solver Settings dialog
Hierarchical menu
Boundary Condition dialog
Edit dialog
button selection
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-23
M



1.6.1: Project Browser
When you first open the software, a Project Browser dialog opens, as seen in Figure U1-8. This window displays
available projects and their associated settings files; it also allows you to import tutorial projects and to create new
projects. This window is also accessed from the Function Manager File menu using the Projects option. Note that on
subsequent start-ups of the software, the Delete Logs dialog may open; see page U1-33 for more information on this
window.
Figure U1-8 Dialog Window
Project Functions
The Projects field lists all the current projects in your work directory (named Design_Files by default). From the
Project Browser you can perform these project-related actions:
New Project
This icon opens a window for creating a new project. Enter the project name in the project name field and click
on OK.
Import Tutorial
This icon opens a window that allows you to import tutorial directories to your working directory. These tutorial
directories contain all the necessary files for running the software tutorials.
Import Package
This icon opens a window that allows you to import a Kyocera or Hymite package directory, which can be used
to model package/design interaction. For more information on the Kyocera and Hymite packages, see page R11-1.
Delete Project
This icon deletes a selected project.
Settings Functions
When a project is highlighted or selected, its associate settings files are displayed in the Settings field. From the Proj-
ect Browser window you can perform these settings-related actions:
Delete Setting
This icon deletes a selected setting file.
Show only names of setting files
This icon hides the Last Modified column, giving a concise view of available settings.
Create new project
Import tutorial
Delete Project

Delete settings
Show only names of
setting files
Import
package
Section 1: Using CoventorWare Version 2010
U1-24 March 19, 2010 Coventor, Inc.
You can also manage settings files from the Function Managers File > New command. This option creates a new
unnamed settings file. The File > Save As command can the be used to name the settings. This option opens a Save
Settings dialog in which you can save the file under a new name by entering the name in the Settings File field.
To select another settings file when CoventorWare is already open, select File > Open. The dialog will appear that
displays all the settings files associated with the active project.
1.6.2: Database Browser
For every project you create in CoventorWare, a project database, with a .cpdb extension, is also created. The project
database contains all the model/mesh data and all the analysis result data. The Database Browser allows you to
explore the contents of a project database; it lists database entries and visualizes database entry dependencies. The
Browser can also be used to
rename entities
copy entities
delete entities
add comments to database entities
import models created in other programs
export models in a format that can be used in other programs
import or export analysis results
export the material properties of a particular model in the form of a .mpd file
The Database Browser is available from icons on the Designer and Analyzer tabs, from within the Preprocessor (File
> Open), some of the individual solver Settings dialogs, and boundary condition dialogs that allow the input of
results. The entities that can be selected in the Database Browser are determined by the location from which the Data-
base Browser is opened. For example, if the Database Browser is opened from within the Preprocessor, only an
unmeshed or meshed model can be selected. If an invalid entity is selected, the Database Browser will generate an
error message.
Browser Components
The Database Browser has these components:
a dependency tree
a selection list
a properties display
icons
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-25
M



Figure U1-9 Database Browser
Dependency Tree
The dependency tree visualizes database entity dependencies. It can be expanded to show all the project models and
and meshes, which may also include simulation results. The tree will indicate the type of entity with an icon that is
shown before the entity name.
Figure U1-10 Database Browser Dependency Tree
Dependency
Tree
Selection
List
Properties
Display
Icons
meshed model
unmeshed
solid model
Analysis
Result
Section 1: Using CoventorWare Version 2010
U1-26 March 19, 2010 Coventor, Inc.
A mesh may have these entities associated with it:
Analysis: This entity is a high-level grouping that contains all the results generated from one solver setup and
simulation. This entity is analogous to a Solutions directory in previous versions of CoventorWare.
Result Group: This entity is a group of results that would be generated from a single Parametric Study step.
Result: This entity is a single result from a solver and represents a steady-state solution, a single mode shape,
or a single timestep. It typically contains several result fields, such as stress, velocity, displacement, etc.,
which can be viewed from the Analysis Results window.
Each solver creates one or more results when the solution is complete. Each time a simulation is launched, the results
are stored in a user-designated Analysis entry in the project database. Some solvers generate a single result that would
be stored as a subentity in the designated Analysis. Other solvers or solver functionality may generate several sets of
result data that are stored in result groups in the designated Analysis. The MemMech Modal ANALYZER solver and
the Parametric Study function create a result group for each step and/or mode created in the solution. A Parametric
Study /transient analysis creates several result groups that in turn have their own results entries. The Database
Browser dependency tree shows how Analysis results are related.
Right click on an entity in the dependency tree to export, copy, rename, delete, or add/edit a common. Note that mul-
tiple selections are not allowed from the dependency tree.
Selection List
This box displays the database entities associated with the selected database entity in the dependency tree. The loca-
tion from which the Database Browser is opened determines which entities will be displayed in the selection list. For
example, if the Database Browser is opened from within the Preprocessor or from the icon beside the Model/Mesh
field on the Designer or Analyzer tabs, only unmeshed and meshed models will be displayed in the selection list. If
the Database Browser is opened from the icon beside the Analysis field on the Analyzer tab, only Analysis entities
will be displayed in the selection list when the user clicks on a meshed model in the dependency tree. Clicking on any
other entity besides a meshed model in the dependency tree will result in an empty selection list.
The Entities of Type drop-down menu can be used to further sort the selection list. For example, if the project data-
base models are displayed, the user can select Unmeshed Models or Meshed Models from the Entities of Type drop-
down menu, and only those types of models in the project database will be displayed.
The selection list features three columns: Name, Type, and Creation Date. The entries can be sorted with respect to
any column by clicking on the column head.
To select an entity for viewing or simulation, click on it in the selection list, not in the dependency tree. Right-click on
an entity to export, copy, rename, delete, or add/edit a comment. To multi-select entities, use the Ctrl key. Note that
only the export and delete functions can be performed on multiple entities.
Properties Display
This box displays information on the database entity currently selected in the selection list. The information includes
the type of entity, the creation date, and any comments the user has added. If it is a model or mesh, the process and the
layout file used to create it will also be displayed. If no entities are selected or more than one entity is selected, the
box is empty.
Note that comments cannot be added from within this box. To add or edit a comment, right-click on the entity in the
dependency tree or in the selection list.
Note that right-click functions cannot be applied to the Result Group and Result entities.
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-27
M



Icons
Copy
If you select an entity and then click on this icon, a copy is created in the same directory.
Rename
If you select an entity, and then click on this icon, a dialog box appears. Type a new name in this box and click on
Enter.
Delete
To delete an entity, select it and click on the Delete icon.
Export
To export an entity, select it and click on the Export icon. A standard file dialog will appear. Select the filter type,
assign a file name, then click on OK. The model will be exported. CoventorWare supports these kinds of export:
ACIS solid model (.sat) in versions R14, R15, R16, R17, and R18
3D IGES (.igs) in version 5.3
3D STEP (.step or .stp) in versions STEP AP203 and AP214 (geometry only)
STL mesh (.stl)
UNV mesh (.unv) that has node and element information
ANSYS mesh with .ans extension (see page R2-37 for an explanation of this extension)
CoventorWare .mbif file: note that this file cannot be read by earlier versions of CoventorWare, but it can be
imported into a 2004 or 2005 database.
CoventorWare .mpd file: this format will extract material property information associated with a model and
save it in the .mpd format. Note that any material properties changes made to a model from within the Prepro-
cessor are stored in the project database, not in the default .mpd file in the Shared directory. This option
allows you to extract a models unique material properties information for use with other models.
CoventorWare 2010 platform-independent database file (.gbak): If a single model or mesh is selected, it will
be the only entity exported. But if an Analysis entity is exported, this file will contain all the entities created
in a project database, including solid models, meshed models, and analysis results.
Import
Click on this icon to import an entity. A standard file dialog will appear. Depending on the file extension set in
the Filter box at the bottom of the file dialog, the appropriate import will be done. CoventorWare supports these
kinds of imports:
an ACIS solid model file (with a .sat extension) up to version 18
a 3-D IGES file (with .igs or .iges extension) up to IGES version 5.3
a 3-D STEP file (with .stp or .step extension), versions STEP AP203 and AP214 (geometry only)
a 3-D Pro/Engineer file (with .prt or .asm extensions), versions Pro/E 16 to Wildfire2.
a mesh from a .mbif file: this can be an mbif created with CoventorWare2001.X
a mesh from a universal file created with I-deas (with a .unv extension), versions 10 or 11
a mesh from a PATRAN neutral file (with a .pat extension)
a mesh from an ASCII Stereolithography file (with a .stl extension)
Section 1: Using CoventorWare Version 2010
U1-28 March 19, 2010 Coventor, Inc.
ANSYS mesh file (with a .cdb, .ans, or .rst extension); see page R2-37 for an explanation of these extensions.
a platform-independent CoventorWare 2010 database file with a .gbak extension, which may contain model
and analysis result entities
CoventorWare Solutions directory: this option imports results from previous versions of CoventorWare in
which results were not stored in the database, but in files stored in the projects Solutions directory.
An imported entity retains its original name; if it has the same name as an entity already existing in the database,
an error window appears that prompts you to rename the original entity before importing the new one. The soft-
ware will also warn you if the import failed or if the imported gbak had no entities.
Import Package
Click on this icon to import a Kyocera or a Hymite package model. These models can be used to investigate the
effects of packaging on a device. See page R11-1 for more information on these models.
Up
This icon allows the user to move up a level in the dependency tree. For example, if a result is selected, clicking
on this icon will move the selection to the model that owns the result. The icon is only active when the selected
entity is a child of (dependent on) another entity.
1.6.3: Run Analysis Dialog
The Run Analysis dialog opens when you complete a solver setup and click on Run in the Solver BCs window. From
this window, you can name the analysis, add it to the Job Queue, or save it for a batch run. If an analysis was chosen
from the Analyzer tab window, its name will be displayed in the Analysis Name field, but you can choose to save the
solution results to an analysis other than the one selected from the Analysis tab.

Analysis Name
This field displays the name of the default analysis or the name of the last analysis used in a simulation. You can
enter a unique name in the field, and the software will save the results to that analysis entry in the database.
Comment (Optional)
This field allows you to add descriptive text pertaining to the simulation.
Execution Mode
Add to Job Queue and run: Default mode that runs simulations in real time.
Add to Job Queue and hold: Adds the simulation to the job queue without running it.
Save for Batch Run: The functionality allows you to run a simulation in the background (without the GUI
displayed) or at a later time. When you click on OK, the software creates an executable analysis in the work-
ing directory that can then be executed from a command line. Note that an analysis that is created in batch
mode is stored in the database, not the job queue. The batch functionality is explained in more detail below.
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-29
M



How to Run a Batch Simulation
The following is a step-by-step procedure for performing a batch simulation in CoventorWare 2010. This option can
be used to optimize license use and to run a simulation at another time or in the background.
Create the Batch Analysis
Prepare your simulation as usual by specifying the solver, input model, and result analysis. Continue with solver BC
setup; then click on Run. In the Save As window select Batch mode. CoventorWare will automatically create a new
Batch analysis in the database that is just like other analyses except it is marked "pending" by the software. A pending
batch analysis can be copied, renamed, or deleted from the Database Browser. The "Pending" state is shown in the
Properties pane of the Database Browser.
Run a Simulation in Batch Mode
Before running a batch analysis, make sure CoventorWare is not running. The batch analysis calls the software
license; if the software is already open, the batch analysis will not be able to access the license needed to start the sim-
ulation.
To start a batch simulation, execute the batch analysis from a command window. The batch command in the /Coven-
tor/CoventorWare2010/bin directory, so you must navigate to that directory in the command window, or enter the
entire path before entering the batch command. The batch command syntax is listed below:
BatchExec --help This command lists all the commands available with the BatchExec command.
BatchExec --listProjects This command lists all the projects in the current work directory.
BatchExec -p project_name or BatchExec --project project_name This command desig-
nates the name of the project from which the batch job(s) will be executed.
BatchExec -p project_name --listPending This command lists all pending batch jobs in the
project.
BatchExec -p project_name --runPending This command runs all pending batch jobs in the
project.
BatchExec -p project_name job1 job2 ...jobN This command executes several batch analyses
in the same project. If you have multiple pending analyses with the same name on different models, you may want
to specify the model label: BatchExec -p project_name Model_Name:Analysis_Name.
If your analysis name has spaces in it, wrap it in quotes: BatchExec -p project_name
"analysis_name"
Note that you cannot run analyses from different projects with a single command. You can write a bat file to execute
analyses from different projects. This technique is outlined on page U1-30.
Example
The example below uses the BeamDesign project, which corresponds to Tutorial 1 in MEMS Design and Analysis
Tutorials, Vol.1.
1. Go to Start > Programs > Accessories > Command Prompt or go to Start >Run and type cmd.exe in the Open
field. Either option will open a DOS command window.
2. In the window cd to the Coventor\CoventorWare2010/bin directory and type the BatchExec command:
Section 1: Using CoventorWare Version 2010
U1-30 March 19, 2010 Coventor, Inc.
where BatchExec is the command;
-p BeamDesign is the name of the project directory where the batch analysis resides;
MemElectro is the name of the batch analysis.
When you start a batch job, the software opens the project and the project database, retrieves the stored solver settings
from the analysis, and starts the simulation. Batch execution progress is displayed in the command window. Solver
output is directed to a BatchExec.log file in the CoventorWare Logs directory.
If you did not exit CoventorWare before starting a batch job, you will not see any progress messages in the command
window. Instead, an exception like this will be generated in the BatchExec.log:
java.lang.Exeception: BatchModeClient:pid=2804:ODBCConnection.cc:153:Failed
to open data source
I\O error for file "D:\MTI_DE~1\BATCH_~1\BATCH_~1.CPD"
Error while trying to open file
The process cannot access the file because it is being used by another pro-
cess.
When the patch job is finished, you must start CoventorWare again to view the results: open the project, go to the
Analyzer tab, choose the completed analysis in the Analysis field, and then click on the View Results icon.
Running Multiple Batch Analyses from Different Projects
To run multiple batch analyses from different projects, you can create bat file that has a sequence of BatchExec com-
mands. Use a text editor to create a bat file in any directory you wish with the desired commands. For example:
E:\Coventor\CoventorWare2010\bin\BatchExec -p BeamDesign MemElectro
E:\Coventor\CoventorWare2010\bin\BatchExec -p MirrorDesign CoSolve
E:\Coventor\CoventorWare2010\bin\BatchExec -p Gyroscope Pullin
You can improve your bat file by adding such instructions echo commands before the BatchExec commands:
@echo off (The echo command displays file execution progress in the command window)
echo Starting Bat file
set PATH=%PATH%;E:\Coventor\CoventorWare2010\bin\
E:\Coventor\CoventorWare2010\bin\BatchExec -p BeamDesign MemElectro
E:\Coventor\CoventorWare2010\bin\BatchExec -p MirrorDesign CoSolve
E:\Coventor\CoventorWare2010\bin\BatchExec -p Gyroscope Pullin
To execute the bat file, double click on it in, or execute it from a command window (type the name of the file at the
command prompt).
1.6.4: Job Queue
The Job Queue functionality allows the user to add simulations to a list of simulations without actually running them.
The user can then start the simulation(s) at another time. The Job Queue dialog also allows the user to monitor simu-
lation progress. To add a simulation to the queue, the user should select the Add to Job Queue and run or Add to Job
Queue and hold option in the Save Analysis dialog (see page U1-28).
To access the Job Queue dialog, click on the icon at the bottom of the Function Manager, or select Tools > Job
Queue. The Job Queue dialog also opens automatically when the user starts a simulation.
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-31
M



Figure U1-11 Job Queue Dialog
The Job Queue Dialog has several icons that allow the user to manage the queued jobs. It also has a pane that listed
the queued jobs with icons that indicate the jobs status. The Progress tab displays the simulation progress for the job
that is running. The Properties tab, shown below, shows which settings file and solver are being used with the current
job.
Note that when a user restarts CoventorWare or switches projects, the Job Queue is not preserved. So if the user
should make sure the Queue is empty before switching projects or closing CoventorWare.
Job Queue Icons
The Job Queue Dialog has several icons that allow the user to manage the queued jobs. It also has a pane that listed
the queued jobs with icons that indicate the jobs status.
Add Jobs to Queue
This icon opens the Database Browser so that a user can add other pending analyses to the job queue. An analysis
would have a pending status in the Database Browser if it was set up but not executed in a previous session of Coven-
torWare.
Section 1: Using CoventorWare Version 2010
U1-32 March 19, 2010 Coventor, Inc.
Delete
This option allows the user to delete the selected job if it not running.
View Results
This option allows the user to view the results of the selected job if it is finished. It opens the Analysis Results win-
dow, which gives the user access to numerical, graphical, and 3-D solver results.
Release
This option releases a job that is on hold, changing its status to Pending.
Hold
This option holds a pending job, changing its status to On Hold. This option can be applied to one or more jobs. Pend-
ing jobs that were below the held job(s) in the queue will then be executed before the held job(s).
Abort
This option stops the execution of the active job. It is enabled only if the selected job is running.
Move Up
This option moves the selected job up one spot in the queue.
Move Down
This option moves the selected job down one spot in the queue.
Release All Held Jobs
This option releases all held jobs and allows CoventorWare to run them. The held jobs do not need to be selected.
Clear
This option removes all jobs with the status of Done from the Job Queue.
Job List Icons
Each job in the Job Queue list has an icon that indicates its status. The icons are explained below:
Icon Description
Indicates the job has been held
Indicates the job is pending
Indicates that the job is running
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-33
M



Job Queue and the Database Browser
The Job Queue permits users to do work in the Function Manager while an analysis is pending or running in the back-
ground. So the user can access the Database Browser, and therefore access analyses that have been queued. Usually,
the Database Browser can be used to rename, delete, copy or export models and analyses. But if an analysis has been
queued, the user is restricted in the operations that can be performed on that analysis and its associated model. The
table below summarizes the Database Browser operations that are allowed if an analysis is included in the Job Queue:
Table U1-3 Database Browser and Job Queue Status
1.6.5: Delete Logs Window
When you have accumulated more than ten log directories, a Delete Logs window will open. This window must be
closed before the Projects window or Function Manager can be accessed. It will ask you what you would like to do
with previously generated log directories. Over time, these directories can take up considerable space. Click on OK
to delete all old logs except the last five sessions. Click on Cancel to dismiss the window without deleting any log
directions. Keep in mind that every time you start the software, a new log directory is created. If you are working on
an ongoing project, spanning several log-ins, you may want to preserve these log directories for trouble-shooting or if
you need technical support.
Indicates that the job has completed
Indicates that the job was aborted
Database Browser Operation
Operation Allowed if Analysis is
Pending, Not
Queued
Pending,
Queued
Running Finished
Delete Analysis Yes Yes No Yes
Delete Model with Analysis Yes Yes No Yes
Rename Analysis No No No Yes
Rename Model with Analysis No No No Yes
Copy/Export Analysis Yes No No Yes
Copy/Export Model with Analysis Yes No No Yes
Overwrite Model with Analysis Yes Yes No Yes
Icon Description
Section 1: Using CoventorWare Version 2010
U1-34 March 19, 2010 Coventor, Inc.
1.7: Common Button Functions
The user interface displays numerous buttons that open dialogs. Each of these dialogs is explained in detail in this ref-
erence section. The dialogs have some common functions; these functions are explained here to avoid the repetition
of documenting them individually on the reference pages.
Browse icon
Each tab window contains fields displaying file, model, or analysis names. A file name will also display the file
path. If only a name is displayed, clicking on the Browse icon, which is labeled with an image of a folder, to the
right of that field will open the Database Browser. If the Browse icon is beside a Model/Mesh field, only models
will be displayed in the selection list. If the Browser icon is beside the Analysis field, only analysis results will be
displayed in the selection list.
If a name and path is displayed in the field, clicking on the Browse icon will open the Open File dialog, which
allows you to change file paths and names. It can also be used to create a new file by editing the File field in the
Open window. Editing the File field is equivalent to performing a Save As function.
Note that the Open File dialog allows the user to navigate to and select a file outside the active project. With the
Database Browser, a model or analysis result outside the active project must be imported.
OK
The OK button saves all changes locally that were made within the window. All dialogs that display OK also
display a Cancel button to abort the change. OK returns control to the Function Manager.
Cancel
The Cancel button also returns control to the Function Manager, but without saving any changes locally.
Back
The Back button appears in boundary conditions menu windows. Clicking on this button returns control to the
Solver Settings window.
Close
This button appears in results windows that yield display-only data. These fields are not editable. Clicking on
Close returns control to the results window. In the case of the results window, clicking on Close returns control
to the Function Manager.
Next
The Next button appears in the solver Settings window. Clicking on this button saves the window settings and
opens the solvers boundary conditions menu.
Run
The Run button starts a calculation from one of the solver programs. While the calculation proceeds, a window
appears indicating that the solution is in progress. When the calculation is finished, one or more new result solu-
tion windows open automatically.
Other characteristics
Many of the software dialogs have a variable number of fields. The variation is determined by the number of vol-
umes or volume surfaces being modeled. Examples in the MEMS Design and Analysis Tutorials and Microfluidics
Design and Analysis Tutorials illustrate these differences for several dialogs.
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-35
M



1.8: File Types and Organization
CoventorWare accepts, uses, and creates a variety of files and file formats. A basic understanding of file conversion
and organization makes it easier to track software progress, organize your files to suit your environment, and trouble-
shoot any problems that may occur while developing your projects.
The software deals with five different categories of files: system resource, input/import, output/export, execution, and
tutorial. Details on each of these categories follow.
1.8.1: System Resource Files
These files are installed when you initially configure your software or are created or modified by you. They are used
as common input files for a variety of projects. These files are typically stored in directories under the design direc-
tory you created. When you create a new project, the software automatically creates a Devices directory for process
and layout files and a Schematics directory for any schematics or generated macromodels that may be created for the
project. The first time you run CoventorWare, the software creates the Shared directory and copies the default .mpd
file to this directory. This project structure is shown below:
Figure U1-12 System Resource File Map
Project Settings Files
The project settings file stores all the pointers and settings within the software dialogs. Each MEMS design has one or
more settings files associated with it. The settings file tells the software where to find all the files it needs to run a
solver, sets up solver parameters and model boundary conditions, and directs the solver to save the results to the
appropriate Analysis location in the project database. Settings files are distinguished by a .mps extension. They are
created and selected from the Function Manager window File menu.
Database Files
The database file stores the 3-D models and the meshed model information, as well as analysis results. Because the 3-
D models and meshes are stored as database entries instead of discrete files, a mesh can be refined without having to
create a new file, and patches can be assigned to a 3-D model so that it can be meshed and remeshed without having
to reassign these patch names. A database file is created for each project, and is given the same name as the project.

Project_Name Shared
MPD/
mpd1.mpd
Users_mpd.mpd
Settings2.mps
Settings1.mps
Devices
.Sat
Extra/
.cat, .proc
Schematics
.ai_sch
.sin, .ai_sym,.hlp
Project.gdb
Project_OS.gbak
Layout Templates
Layout Generators
MPD/
Process\
Foundry folder
CoventorDefaultStepLibrary.proc
Saber Models
Section 1: Using CoventorWare Version 2010
U1-36 March 19, 2010 Coventor, Inc.
The name is also appended with the type of operating system you have. For example, if the project name is BeamDe-
sign, and you have a Linux operating system, the database file for that project would be called BeamDesign_linux
with a .CPDB extension. A .GBAK file is also created; this file is a cross-platform backup version of the .CPDB file.
As noted above, the simulation results are also stored in the project database. Each solver creates one or more results
when the solution is complete. Each time a simulation is launched, the results are stored in a user-designated Analysis
entry in the project database. Some solvers generate a single result that would be stored as a subentity in the desig-
nated Analysis. Other solvers or solver functionality may generate several sets of result data that are stored in result
groups in the designated Analysis. The MemMech/Modal ANALYZER solver and the Parametric Study function cre-
ate a result group for each step and/or mode created in the solution. A Parametric Study transient analysis creates sev-
eral result groups that in turn have their own results entries.
Managing Database Files
As you add models and run analyses, the project database can grow quite large (multiple GBs). There are two types of
fragmentation that, in conjunction with a large project database, can cause CoventorWare to become sluggish. The
first type is disk fragmentation, which occurs only on systems running Windows, and can occur even if there is plenty
of free space on the disk. The second type is database fragmentation is the result of adding and deleting models and
analyses; this type can occur under both Windows and Linux. Symptoms that may indicate that one or both types of
fragmentation are slowing CoventorWare include
CoventorWare takes an unusually long time to open a project, and the Function Manager appears locked up.
The Preprocessor operates slowly when loading models from a project database that contains many models.
Analyses run more slowly than expected.
The procedure below will reduce both types of fragmentation and should result in noticeably improved responsive-
ness. If, after following this procedure, CoventorWare continues to respond slowly, please contact your Coventor sup-
port representative.
To de-fragment project database files:
1. Check that the hard drive containing your CoventorWare Design_Files directory has adequate free space. At
least 15% of the total disk size is necessary to complete the rest of this procedure on Windows systems, but
more is better. If you are running out of disk space, resolve this issue before proceeding.
2. Reboot the system, start CoventorWare, open the target project, and then exit, accepting the option to backup
the project data. This will create a backup of the project data in a .GBAK file. (You can check the time stamp
on the .GBAK file to be certain it is up to date.)
3. Copy the .GBAK file to another hard drive to ensure that a backup of the project data exists should anything
go wrong in the subsequent steps.
4. Delete only the .CPDB file in the project folder. Do NOT delete the .GBAK file. (No data will be lost by
doing this because CoventorWare can fully reconstruct the .CPDB file from the .GBAK file.) Linux users can
continue to Step 6.
5. If the system is running Windows, use the built-in defragmentation tool (Start > Programs > Accessories>
System Tools > Disk Defragmenter) to analyze the hard drive. This will give a complete list of all files and
the number of fragments. If the tool recommends defragmenting the hard drive, then defragment and re-ana-
lyze the hard drive. This will likely be the most time-consuming step in this procedure.
6. Start CoventorWare and open the target project. Because the .CPDB file is missing from the project folder,
but the .GBAK file is present, CoventorWare automatically re-creates the .CPDB file from the .GBAK file.
If the disk has sufficient contiguous free space for the .CPDB file, and the .CPDB file has been re-created from a
.GBAK, the project database should be completely defragmented.
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-37
M



MPD Files
The mpd directory stores the materials database files (.mpd). This database file stores all material properties used by
the solvers during the computation phase. Material constants, thermal properties, and other attributes for each mate-
rial used in a MEMS design are stored in this file. An initial database is provided during installation and stored in the
Shared directory. From the User Settings window that opens the first time you run the software, you point to the
Shared directory that contains the this .mpd file. You may change or add any properties at any time, but it is a good
practice to save these changes to a different MPD file so that the original file is be preserved. The MPD Editor,
accessed from the Function Manager, allows you to add or delete materials and to change the material properties of
existing materials.
Process Files
The process file stores the process steps used to fabricate the MEMS device. The software uses this process informa-
tion to model the deposit and etch steps used and to model deposit profiles, material thicknesses, etch slopes, and
other parameters accurately. The process file can be user created or can be specific for the foundry that will fabricate
the device. Process files are distinguished by a .proc extension. The software stores the process file in the Devices
directory of the current project. Process files are accessed from Process Editor icon in the Function Manager.
Layout Files
The layout files represent the source two-dimensional layout database used by the software for 3-D modeling. The
Devices directory stores a variety of layout related files. The layout files may be created using the 2-D layout editor
included with the software, extracted from an ARCHITECT schematic, or provided by you from another program.
CoventorWare 2-D layout files have a .cat extension. If you choose to use your own software, the layout files must be
in CIF, DXF, or GDSII format. CoventorWare can convert these files to 2-D Layout Editor format. Typically, the
import files are also stored in the Devices directory.
1.8.2: Input Files
These files are created during the execution of the program and are specific to a particular project. Some files can be
translated from other software. These input files are necessary to create the data required by the solvers to compute
solutions for your MEMS models.
Database Files
During software execution, a database file (.cpdb) is created that contains model information. This model information
is then used by the solvers. Simulation results are also written to the database file and are grouped with the model
used for that simulation. Other files can be created from this database for export to a third-party software, and files
can be imported into the project database file.
Model Import
A 3-D solid model or mesh can be imported from several different third-party tools. The imported solid model can be
in .sat, .step, or Pro\E (.prt, or .asm) formats, or 3-D IGES file (with .igs or .iges extension) up to IGES version 5.3, or
as a mesh in .mbif, .stl, .pat, .unv, .cdb, .ans, or .rst format. Note that the last three file extensions are used for
ANSYS files. See page D4-16 for more details.
To import a model, click on the Database Browser icon on the Designer or Analyzer tab, select the Import icon at the
When you delete analysis results and meshes from the database, the corresponding space in the .CPDB is not
actually recovered, i.e., the size of the .CPDB file never shrinks. However, deleted data is omitted when a .CPDB is
recovered from a .GBAK. Therefore, a .CPDB file that has been recovered from a .GBAK file may be significantly
smaller than the original .CPDB file.
Section 1: Using CoventorWare Version 2010
U1-38 March 19, 2010 Coventor, Inc.
top of the Mesh/Model Browser. In the dialog that opens, select the correct file extension, browse to the file you want
to import, and click on Open. The software will then translate the model format into the database file.
If you create your mesh in a third-party tool, and then import it into CoventorWare, you will need to provide material
information from within the Preprocessor. Use the Layer Properties dialog or Part Properties dialog to assign materi-
als on layer or part entities.
1.8.3: Export Files
CoventorWare can export 2-D, 3-D, and result files. The Layout Editor can export 2-D layouts in GDS, CIF, IGES,
SAT, and DXF formats. See page D2-17 for more information.
The Database Browser can export 3-D models in ACIS, SAT, IGES, and STEP formats. Meshes can be exported in
STL, UNV, and ANSYS formats. Solid models and meshed models can also be exported as .gbak files to be shared
with other CoventorWare users. See page U1-24 for more information.
Result data can be exported to a .gbak file or can be exported as text files from the Results window and from within
the Visualizer. For example of exporting results for graphing in a third-party program, see page T7-25.
1.8.4: Execution Files
These files are created by the software during the execution of the program. They contain data used by the software
while it is running, including log information that may be helpful to Coventor support staff in debugging simulation
problems. Some of these files are deleted when execution is complete, while others are retained. In general, any of
these execution files may be deleted when processing is finished.
Temporary Files
The software creates an assortment of temporary files. All are stored in a Temp directory that you designated the first
time the software was run. This location will not have to be set again. If there is a need to change the Temp file path,
go to the Tools > User Settings menu to access the User Settings window. Each time you run the software, previous
temp files from the solver you are running are overwritten. Note that if you are running multiple sessions that use the
same solver during the session, each session must have a separate Temp directory path. Depending on the type of sim-
ulation you are running, the temporary files may require a significant amount of disk allocation for the solver compu-
tations. Solutions for MemCFD and NetFlow, or for models with complex material property specifications, can
exceed 500-1000 MB of space.
Log Files
CoventorWare creates several types of log files. These files are automatically stored in the Logs directory. When you
start a new software session, a dialog window periodically prompts you to choose from several log file delete options.
The log files can usually be deleted unless a problem develops that requires the assistance of the Coventor support
staff. The log files include software commands that have been executed, detailed information about simulation prog-
ress, etc. This information can be helpful in determining the source of a problem that may occur during a software
session.
MemMech Temp Files
Unlike other solver temp files, MemMech temp files are not preserved in the Temp directory unless the Retain
intermediate analysis files? setting is set to Yes in the MemMech Advanced Settings dialog (see page R4-76 for
more details) If this setting is not set to Yes, the .dat, .inp, .fil, .msg, and .sdb files are not written to the directory to
be preserved until the solver is run again. This was done because MemMech temp files are large. Each user must
evaluate the tradeoff between not using this setting and saving space or using this setting to preserve files that may
be needed for debugging. Any solver that runs MemMech will be affected, including CoSolve and the Parametric
Study function.
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-39
M



1.8.5: Tutorial Files
CoventorWare also provides additional files to help demonstrate software capabilities and help you learn to use the
software.The tutorial files supplement the MEMS Design and Analysis Tutorials, Vol. 1 and 2, and Microfluidics
Design and Analysis Tutorials. Files have been provided to help you complete the exercises without creating all of
these files yourself. To access these tutorial files, go to the File menu in the Function Manager, and choose the Proj-
ects option. In the window that opens click on the Import Tutorial icon (second to the right), and a list of available
tutorials appears. When you choose a tutorial, the corresponding tutorial directory is automatically copied from the
installation location into the work directory, with the tutorial name as a project name. The tutorial will have the cor-
rect file structure, and you can proceed according to the tutorial instructions. Additional information can be found in
the MEMS Design and Analysis Tutorials, Vol. 1 Introduction, beginning on page T1-1.
1.8.6: File Naming Restrictions
Files created by users cannot include any files that contain the following strings in the specified order. The underscore
is intentional; the N represents any number.
_mode_00N esp_
_frequency_00N msp_
_time_00N sens_N
cs_ sm_N_
Also note the following:
A user-named file cannot start with a numeric character.
Cat files cannot have a colon ( : ) in the file name.
Projects, directories, and file names cannot use spaces.
1.8.7: File Formats
CoventorWare uses a variety of formats to optimize the interface among different software tools. The table below
describes all file types used in CoventorWare: those the software creates and those you create. The table lists the file
extension convention normally used, and the storage path for the files. Once the paths are set up, file retrieval and
storage is generally transparent to the user. See page U1-35 for more details on setting up directory paths in your
account.
Table U1-4 CoventorWare File Formats
The devices depicted in the tutorials and the files associated with them are intended for educational purposes only.
File type Extension Path
Setting files .mps ...\project_name
Material Properties Database .mpd ...\Shared\mpd
Process characterization file .proc ...\project_name\Devices
Layout file .cat ...\project_name\Devices
Database file .cpdb ...\project_name
Cross-platform database backup file .gbak ...\project_name
Section 1: Using CoventorWare Version 2010
U1-40 March 19, 2010 Coventor, Inc.
1.8.8: Directory Structure
CoventorWare automatically creates most of the needed directory structure. You need only to name the project and
settings; the software creates and stores the files in the correct directories. For files not contained in the project data-
base (if the file path is shown in the file field), you can override the default directories and designate alternate paths
by clicking on the Browse icon beside the file field. Figure U1-13 shows a typical user directory diagram:
Figure U1-13 Typical Directory Structure
The top directory is your work directory, which has a default name of Design_Files (you can rename this directory).
The common files that can be used by all projects reside in the Shared directory directly under the work directory. A
CoventorWare log files .log ...\Logs
Solver temporary work space ...\Temp
Saber netlist files .sin ...\project_name\Schematics
3-D model files .sat ...\project_name\Devices\Extra
Saber schematic files .ai_sch ...\project_name\Schematics
Scene3D model files .arch3D ...\project_name\Schematics
File type Extension Path


Design_Files
Project_Name
Shared Temp
*.dat, *inp, etc
Settings2.mps
Settings1.mps
Logs
Imported
Tutorial
Same structure
as any other project
.sat
Devices
Extra
.cat, .proc
Schematics
MPD
mpd1.mpd
Users_mpd.mpd
*.tcl
(Generator add-ons)
Layout_Generators
.ai_sch
.ai_sym,.sin,
.hlp
Layout_Templates
Saber_Models
.aimMacro
Project.gdb
Project_OS.gbak
Process
Foundry
CoventorDefaultStepLibrary.proc
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-41
M



single MPD file, layout generators, Saber models, layout templates, and process files are grouped in this directory.
The Layout_Generators directory contains generic generators, generators that are part of a purchased foundry kit, and
any generators that you create. If you have purchased the ARCHITECT or macromodeling modules, the
Saber_Models directory contains user configuration files for Saber and the .aimMacro directory for any user-created
macros. The Layout_Templates directory contains cat template files.
Input and output files specific to a project are grouped within a project directory. They are further separated by layout
and process files in the Devices directory and ARCHITECT schematic and macromodel files in the Schematics direc-
tory. Intermediate files are stored in the Devices\Extra directory. Solid models, mesh models, and analysis results are
stored in the projects database file (.cpdb).
The execution files are split into a Temp directory for temporary files and a Logs directory for log files. Each of these
directories can have subdirectories if you plan to run multiple sessions.
Tutorial directories are created as needed. When you import a tutorial directory (using the Import Tutorial icon
accessed from the Function Managers File > Open option), the corresponding tutorial directory is copied automati-
cally from the software installation location into your work directory with the tutorial name as the project name. The
tutorial directory will already have the correct file structure.
This organization makes it easy to find all the files needed to run the software. The individual project directories can
be archived or deleted when no longer needed. This simplicity of organization makes this the recommended structure
for users. Throughout this manual, all examples refer to this type of directory structure.
1.8.9: Setting Up a Typical Project
When you start CoventorWare and create a new project, the Devices and Schematics directories are created automati-
cally. The software looks for the mpd file and the Temp directory you specified the first time you ran the software.
The software will also create a settings file and a database file with default names based on the project directory
name. In the case of the settings file, you can accept this default name or save it as another name. Each design has one
or more settings files associated with it. The settings file tells the software where to find all the files it needs to run a
solver, sets solver parameters and model boundary conditions, and directs the solver to the appropriate location to
store output results.
After you create a project directory and a settings file, designate a process file. The software will default to the
project_name\Devices directory for the .proc file location. The mpd directory file path will default to the Shared\mpd
directory assigned the first time the software was run.
From the Designer tab, designate a layout file. The software will default to the project_name\Devices directory. You
can point to a pre-existing file or create a new one.
When you click on the Start Preprocessor icon, the software uses the proc and cat files to create a solid model. The
model is then meshed from within the Preprocessor. The models and meshes associated with a project are stored in a
.cpdb file. This database file gives you the flexibility to modify a mesh without actually remeshing and to regenerate
a mesh while preserving patch names.
You will only have to change file paths if the default paths are incorrect. To change any file path, click on the Browse
icon to the right of the file path field. A navigation window opens that allows you to select a file and/or directory.
When you open the window, it lists all files stored in the directory path. You may select a file from the list, or edit the
field to create a new nameeven if the file does not exist. If you are specifying a directory path, you may select any
existing directory level or create a single new directory level from an existing one. When you have finished your
selection, click on OK.
The Temp and Shared directories are created in the default locations shown in Figure U1-13, but they can be
located on a larger hard disk to allow for more space for project directories.
Section 1: Using CoventorWare Version 2010
U1-42 March 19, 2010 Coventor, Inc.
1.9: Design Considerations
The guidelines and considerations in this section will help ensure that your designs progress smoothly and with little
difficulty.
1.9.1: Fabrication Description
Process modeling in CoventorWare presents a simplified deposit and etch model that is adequate for 3-D design and
meshing, without becoming overly complex. Any mask or process steps that does not result in a modeled object or in
a surface that influences an electrostatic or mechanical solution does not need to be characterized. You can build a
process file in the Process Editor or obtain one as part of a foundry design kit that includes files compatible with
selected fabrication facilities.
If you create your own process, you will need to choose mask names and mask photoresist (also known as mask
polarity). These are important considerations because the correct mask names must be assigned to each layer during
the 3-D modeling phase of the design.
1.9.2: Layout
A layout tool is provided to help you in the definition of a two-dimensional layout for your design. You may choose
to design your entire MEMS project using CoventorWares 2-D Layout Editor, choose to use it only for viewing, or
decide to bypass it completely. Layout Editor functionality is documented in CoventorWare DESIGNER Reference.
CoventorWare imports CIF, DXF, or GDSII format files; the software can take the layout information and translate it
into the native layout format.
Mask names and tones that you select during the process modeling phase need to be defined in the layout phase. The
solid model tool combines the 2-D layout data with the process information to create a 3-D model.
You also can bypass the layout editor step and design 2-D and 3-D geometries directly in a third-party modeling and
meshing tool such as I-deas. These third-party tool designs are imported into CoventorWare using the Database
Browser, accessed from the Designer or Analyzer tab. If you create your 3-D layout in third-party program, you will
need to declare the material properties using the Preprocessors Properties window.
The MEMS design input and modeling is called front-end design. Figure U1-14 illustrates possible front-end design
flows.
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-43
M



Figure U1-14 Creating a MEMS Model
1.9.3: Meshing
The software is capable of handling a wide variety of designs. It has some finite capability limits, but the resource
limits of the platform on which it is run often dominate a decision on how complex of a mesh to create.
Design complexity increases solver computation times. Computation time is influenced by the structure of the design
and the number of compute nodes created during the meshing process. Consider the tradeoff between solution accu-
racy and computation time when deciding on the type of mesh structure and meshing components to use. The target
solver can also be configured to accommodate large designs with adjustment of tool control parameters and alternate
solution methods. Some adjustments may reduce accuracy, but will allow the software to run complex problems.
1.9.4: Computation Time Requirements
Many of the solvers can require significant computer resources, depending on the mesh and type of solution being
performed. Coupled solvers like CoSolveEM iterate through two or more solvers a number of times, and a parametric
study may also iterate several runs to produce the desired results. For all but the simplest models, expect a significant
pause in operation once a solver is started, and expect to run the software on the fastest machine you have available.
Export file in DXF
2-D layout created
Edit model or convert
Import third-party
CIF or GDSII format
in Layout Editor
meshed model
Build process file
(native .proc format)
Build 3-D model
Select solvers
2-D layout created
in third-party program
Export layers in IGES,
STEP or SAT format

Mesh 3-D model
Parametric Mesh
Generators
3-D model extracted
from Architect
to native cat format
to third-party programs
Third-party meshing

schematic
Section 1: Using CoventorWare Version 2010
U1-44 March 19, 2010 Coventor, Inc.
The most computationally intensive runs are generated by a parametric study using CoSolveEM or other coupled
solver runs, so consider reducing the number of simulation steps when investigating parameter shifts and trends.
1.9.5: Accuracy
The software can produce highly accurate results. However, accuracy can be limited by the techniques used in creat-
ing the meshes, by the configuration of the solver tool parameters (default settings are usually the most accurate), and
in simulating the actual electrical and mechanical boundary conditions that are applied in a real design.
1.10: Enhancing Productivity
The following is a list of procedures, hints, cautions, and recommendations to help you obtain better results.
1.10.1: Monitoring Execution
The software screens display quickly. Only the execution of the solvers produces a noticeable delay when setting up
or running the software. Solver run time is dependent on the platform, network and hardware configuration, and CPU
availability. All activity during solver execution is displayed in the log window that accompanies the main menu
interface. While some of the displayed messages may be cryptic to the casual user, key display information can pro-
vide information on solver progress.
The MemElectro and MemMech runs are clearly differentiated by displays of capacitance node calculations or
mechanical solver runs. The MemElectro solver produces more messages and provides calculation feedback based on
the number of nodes in the design. The mechanical solver run shows a pre-calculation phase and a main calculation
phase message; the log window may remain inactive for quite some time while the main computations take place.
CoSolveEM runs call up both the MemElectro and MemMech solvers. After each cycle is complete, the log window
displays the current CoSolveEM iteration. CoSolveEM runs typically require 2-6 iterations to complete, although the
number is design dependent. The CoSolveEM iteration limit (set at 12 by default) can be changed in the CoSolveEM
Settings window. CoSolveEM progress can also be monitored from the Job Queue dialog (see page U1-30), which
has a Progress tab that displays simulation progress.
Other solvers display a variety of parameters while executing. The number of lines that appear in the log window and
the amount of diagnostic information programmed for viewing during the execution cycle is highly dependent on the
solver. Coupled solvers display a sequence of compute phases.
The Parametric Study function may call up MemElectro, MemMech, or several other solvers. The status of a para-
metric study can be monitored in the Job Queue dialog (see page U1-30).
Other indications of compute progress can be determined by viewing the Temp directory where temporary files are
stored. While the files themselves may be in binary format or not easily interpreted, the number, size, and time stamp
indicates progress and level of compute intensity.
Before starting a run, there is no easy to way to predict the time interval required for an entire simulation or incremen-
tal solver iteration. Within a complete solver execution, the time to finish successive iterations for CoSolveEM or the
time to complete successive trajectory steps for a parametric study may vary significantly, depending on the structure
and its current electrostatic or mechanical state.
Components of the software generate log files during execution. Some of the log files contain detailed information
that can be useful in analyzing execution progress and problems. Because these file details are beyond the scope of
this documentation, consult a Coventor application engineer for additional information.
The log window used to display software progress is intended for information display. Do not attempt to enter text
in this window.
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-45
M



Testing the Setup
Depending on the structure, CoSolveEM, other coupled solvers, and parametric studies can be computationally
expensive. Because it is possible that some setup conditions may be incorrect or may produce unanticipated results,
computation time can be conserved by running smaller scale simulations first. The following are some recommenda-
tions for testing a setup:
Check Material Properties Database: When creating a new project, be sure to access the Material Proper-
ties Database from the Function Manager to verify the values set for the materials used in the design. If you
need to change material properties for a particular design without changing the default MPD file, or if you
want to change the material properties of a model that has already been built, access the Material Properties
Database from the Preprocessors Properties window. Any changes made from this window will only be
applied to the active model.
Check solver settings dialogs: Before running CoSolve, be sure to check the individual solver Settings dia-
logs for MemElectro and/or MemMech. Even though these dialogs are not accessed from the CoSolve solver,
the software relies on the solver mode and control parameter choices from these other dialogs to complete the
calculations.
Check boundary condition dialogs: Note that CoventorWare ignores any line that contains the word "none"
in the first column. Other settings on that line are not used.
Execute individual runs: Before running the CoSolveEM solver, execute individual MemElectro and Mem-
Mech runs. An approximate coupled solution can be obtained by running MemMech with the Electrostat-
icBCs (see page R4-62).
Use OneStep setting: When running CoSolveEM, set the CoSolveEM Settings window Iteration Method
field to OneStep. This forces the solver to complete a single iteration using the MemElectro and MemMech
solvers. While the results may not be as accurate, it can verify user setup and may point out unanticipated
results.
Use simpler mesh structure: Consider running an alternate design with a much simpler mesh structure to
test the setup and execution. The results may not be as accurate, but this provides a convenient way to test a
variety of setup situations in less time.
Reducing Total Computation Time
The solvers are complex and require may significant time to execute. This time can be reduced if the problem pre-
sented to the solver can be made simpler. Here are some ideas to reduce scale and complexity:
Use alternate meshing approach: Sometimes an alternate meshing approach can result in fewer computa-
tion nodes. Look carefully at the structure and the problem to be solved when deciding on the appropriate
mesh design. Reductions in the number of mesh elements or changing the element type can have a significant
impact on computation time without sacrificing accuracy.
Scale down parametric studies: Execute scaled-down parametric studies with widely spaced trajectory
points to analyze trends and to determine the total range of a solution set. A detailed analysis with many more
points then can be run as an overnight job.
Use mesh transform tool: You can save some time in running a parametric study by using the mesh trans-
form feature available from within the Preprocessor. This feature allows you to prescale or modify a design
parameter before applying a trajectory. With a mesh transform, you can sometimes avoid performing two
parametric studies to complete your analysis.
Allowing Sufficient Disk Space
The tutorial examples in the CoventorWare documentation set are scaled-down versions of real designs, and even for
these designs the CoventorWare solvers can produce numerous result and temporary files. For very complex jobs, be
sure to allow enough temp space, and to place your Temp directory on a fast local disk. Large executions can consume
Section 1: Using CoventorWare Version 2010
U1-46 March 19, 2010 Coventor, Inc.
hundreds of megabytes of storage space, and the frequent disk access can affect performance if slower storage paths
are designated. If available space is exhausted during a simulation, the system may appear to crash. Delete or archive
files from previous runs to increase available space.
1.10.2: Managing Files and Directories
CoventorWare files are stored in several different directory paths. Being aware of this file structure and where to find
files can aid in analysis and efficiency when running the software. An entire section is devoted to this important sub-
ject, starting on page U1-35.
1.10.3: Efficient Design Iterations
CoventorWare minimizes the number of iterations required to produce a solution. Designs generally proceed in a
linear flow and are adjusted to refine design parameters or solution accuracy. Once a successful solution has been
produced, further iterations can be managed through the Parametric Study function without needing to proceed
through the complete design flow. Figure U1-15 shows a simplified graphical view of MEMS design using the
DESIGNER/ANALYZER software. For more information on design iteration using ARCHITECT, see page A1-5 of
the CoventorWare ARCHITECT Reference.
Figure U1-15 Typical Design Flow
Iterated Simulations from within the Solver Modules
Some solvers have iteration capability independent of the Parametric Study function. Three special cases are high-
lighted here.
2-D design creation
3-D solid modeling
Finite element mesh
Apply boundary conditions
Compute solution
View table or graphic results
Build or modify model
for functionality or
performance
Remesh for better
accuracy
Modify BCs to change
results
Use Parametric study
function from within
each solver to create
result set
Process modeling
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-47
M



The MemMech solver allows a modal analysis or harmonic analysis solution to be performed at the same time as a
mechanical solution. Users select the number of modes to be computed or a range of harmonic excitation frequencies,
and a result group is created for each mode. The modal and harmonic results are tabulated and viewed in table and
graph format, and the completed modal solution can be viewed in the Visualizer.
The CoSolveEM solver allows trajectories to be set for voltage ramps. This capability enables pull-in or hysteresis
analysis to be performed. The pull-in results can later be combined with parametric study variations to enable such
analysis as pull-in variation as a function of material property or dimensional change.
1.11: Environment Variables
There are several environment variables that a user can set to extend the functionality of CoventorWare. The func-
tionality that these environment variables activate are not needed by the average user. The variables that affect the
overall function of CoventorWare or multiple modules are listed below. Variables that affect a specific module are
listed in that modules reference section.
Setting Environment Variables on Windows
To set an environment variable on a Windows operating system:
1. From the Start menu, select My Computer. In the window that opens, under System Tasks, select View System
Information.
2. When the System Properties window appears, click on the Advanced tab, then on Environment Variables.
3. In the Environment Variables dialog, under the User variable pane, click on New.
4. In the dialog box that opens, enter the variable name and value.
5. Click on OK. The newly defined variable appears in the User Variables window.
6. Click on OK to close the Environment Variables window.
Variable Name Possible Values What it does
MTI_DEBUG on Displays debugging information for the Function
Manager, ARCHITECT, and MEMS solvers in the log
file
MEMCAD_DEBUG_LEVEL 1,2,3 Sets the level of debugging information of the
ANALYZER solvers. A value of 3 generates the most
debugging information. Note that the functionality of
this environment variable has been replaced by the
Retain intermediate analysis files?, which is set from the
MemMech Advanced Settings dialog; see page R4-76
for more details.
MTI_SKIP_PROJECT_CHECK any If set, CoventorWare will start faster because it skips
checks that determine if a project in the users
workspace is a valid project, and thus filters what
appears in the Open Project dialog. This variable is only
useful if a user has a large number of projects.
MTI_CWRCFILE full path the user-specific
.coventorware rc file
The specified value will override the default location of
the coventorware2010rc file, which normally lives in the
profiles directory on Windows and in the home directory
on Linux. This variable is useful if you have multiple
workspaces and you want to run multiple instances of
CoventorWare.
Section 1: Using CoventorWare Version 2010
U1-48 March 19, 2010 Coventor, Inc.
Setting Environment Variables on Linux
To set an environment variable on Linux, use the following syntax:
In a sh or bash shell, use
variable_name=value
export variable_name
In csh or tcsh shell, use
setenv variable_name value
For example, to set the MTI_DEBUG variable in a bash shell, define it using the following syntax and substituting
the correct directory path:
MTI_DEBUG=on
export MTI_DEBUG
To list the environment variables that have been set, enter env at the prompt.
1.12: Interfacing with Third-Party Software
CoventorWare contains all of the necessary tools for completing a MEMS design. In addition, several third-party
software programs are compatible with native or exported CoventorWare file formats and may be used to view, mod-
ify, mesh, or evaluate the models that have been created in CoventorWare.
Layout Files
CoventorWares Layout Editor can import and export 2-D layouts in these formats: GDSII, CIF, 2-D IGES, SAT, and
DXF. ARCHITECTs Scene3D can export a 2-D layout in GDSII format.
Solid Models and Meshes
You can import and export solid models and meshes using the Database Browser, which is accessed from the
Designer and Analyzer tabs (see page U1-24). For details of which solid model and mesh formats can be imported or
exported, see page U1-27.
Scene3D can export a solid model in 3-D ACIS SAT format.
ABAQUS
CoventorWare includes ABAQUS 6.7. You can purchase a version of ABAQUS separately and use it in place of the
internal CoventorWare FEM solver. Users who have chosen to use an external version of ABAQUS will not be pro-
vided with the internal solver. For ABAQUS users, the executable must be in the users path, and the executable
name must be abaqus. The MemMech Advanced Settings window must also be set to use external ABAQUS.
Text Output
The Analysis result window has an Export Table function that allows you to table information to text files for addi-
tional processing in spreadsheets. This option is available from the View Table icon drop-down menu.
Changes to the user variables only affect the user who is logged on the machine. System variables affect all users
and can only be changed by a system administrator.
Section 1: Using CoventorWare Version 2010
Coventor, Inc. March 19, 2010 U1-49
M



Graphical Output
Tecplot 360 includes a print function to save screens in color TIFF, Postscript, or vector Postscript format at adjust-
able resolutions. Animation files created through Tecplot 360 can be saved in MPEG format.
Saber
The Saber systems modeling tool from Synopsys, Inc. is a separate package that interfaces with CoventorWare
through the ARCHITECT and macromodeling modules. Saber permits a wide range of computations and analyses
using ARCHITECT parametric library components and reduced-order models generated with Coventors macromod-
eling modules. CoventorWare supports Saber version 2009.06.1.0
Section 1: Using CoventorWare Version 2010
U1-50 March 19, 2010 Coventor, Inc.
Notes
Section 2: Material Properties Database Version 2010
Coventor, Inc. March 19, 2010 U2-1
M



Section 2: Material Properties Database
To create a solid model, the user needs an MPD file, a process file, and a layout. The MPD file, the Material Proper-
ties Database, stores characteristics of the materials used in a fabrication process. The properties associated with the
materials include strength, density, conductivity, and thermal characteristics. A material is selected for each of the
deposit steps in the process. Simulation results depend on the physical and chemical properties of the materials that
make up the model.
CoventorWare provides a database for storing all material properties likely to be used in a solver calculation. This
data is stored in the mpd1.mpd file, which is placed in a folder named MPD in the users Shared directory when Cov-
entorWare is run for the first time. The default Material Properties file contains thirty-two common materials. When
any material is selected, its physical properties are automatically displayed. These properties may be edited by simply
replacing the values shown with new values desired.
If new materials are added, the information becomes part of the database. Changes are written to the database when
the Editor is closed, or when another material is selected. For including a variation of an existing material, select that
material and then choose Copy Material. Enter a name for the variant and make the differentiating changes in the
materials properties. When Delete Material is clicked, the selected material is permanently deleted. The Import
Material button can be used to import material properties stored in an MPD file or in a database model.
In general, the foundry should dictate the material properties for the materials used for its process. Any simulations
run using different values will not be as accurate. However, there may be occasions where users will want to update
the database with new materials and material properties, or choose local parameters stored with the project that are
not permanently updated in the database.
For example:
Users may be working with more than one foundry with different material characteristics. The user may want
to change some parameters to determine the sensitivity of the model to a material change or go beyond the
range of specifications offered by a variety of foundries to explore a worst-case scenario.
Material property values can be updated as more information is known. The user may not have the latest
foundry file, but may still know that a specific material has different values.
The user may need materials to have characteristics that fall within a range for the model to work properly.
This can help determine the best foundry to use for a specific design.
The user may be part of a large company with an in-house processing facility, where material values can be
modified (with different temperature/time profiles during processing, for instance).
The in-house facility may be phasing in a new process, and the user may need to know how the change will
affect the model.
The material properties for each material in the default MPD are intended as guidelines for the user. Maximum
accuracy is obtained when the user either edits the properties of a listed material for an individual design, or creates
a new material and inputs its specific material properties.
The MPD is very tolerant; that is, it will not object to data that is unrealistic or that violates foundry specifications.
Section 2: Material Properties Database Version 2010
U2-2 March 19, 2010 Coventor, Inc.
2.1: Access to the MPD
The database can be accessed from two places within the software:
The MPD Editor icon is to the right of the Materials field of the Function Manager. This button opens the
Materials Editor window, seen in Figure D2-1. This window provides access for viewing and changing exist-
ing properties, and for adding new materials to the database.
The MPD can also be accessed from within the Preprocessor: right click on a part and select Properties, or
open the Edit menu of the Preprocessors menu bar and select Properties. Changes made here will only apply
to the model displayed; the MPD database is not changed.
Figure D2-1 Material Properties Database (MPD) Dialog
2.1.1: Database Window Functions
The MPD viewer appears the same regardless of the access location selected. Changes are made to the properties
when the Editor is closed, or if a new material is selected for viewing. New materials can also be added at any time by
selecting the New Material button, assigning a name in the dialog box that appears, and then assigning physical
properties. Material names may not have any spaces. Materials no longer needed can be removed by clicking on
Delete Material. Note that there is no Undo function.
Note that any changes entered in the Preprocessor's MPD editor are immediately saved to the currently open
model/mesh document, without waiting for the user to issue an explicit 'Save' request. So even if a user does not
save a model or saves a model under a different name after changing the material properties, the changes would
have already been saved to the models properties database. The recommended procedure is the save a model under
a new name first, then edit material properties.
When the MPD is accessed from the Function Manager, changes are written to the MPD file. If access is through
the Preprocessor, changes will only apply to the model displayed.
Section 2: Material Properties Database Version 2010
Coventor, Inc. March 19, 2010 U2-3
M



2.1.2: Initial Material Property Assignment
Whenever the user creates a new model, material properties are automatically assigned to the layers based on the
material name that was assigned to each layer in the Process Editor. The material properties are taken from the users
Material Properties Database. If a layer is assigned a material name that is not available in the MPD, the property val-
ues are set to zero.
If the model was created outside of CoventorWare, the names of the materials used may not be in the database. To
correct this, either add new materials to the database or, if the materials are present but the names are different, simply
use the Copy Material button. Select the material in the MPD with the desired properties, click on Copy Material,
and then provide the material name specified for the new layer.
2.1.3: Importing Material Properties
Material properties can be imported from an MPD file or from a database model. Clicking on the Import Material
button in the Materials Editor opens the dialog shown below:
The user has two choices for import: MPD file or Model/Mesh. If the user selects the MPD file option, the file
browser to the right of the Source field becomes active. If the user selects the Model/Mesh option, the file browser
icon is greyed out, and the drop-down menu in the Source field becomes active. The user then selects a model from
the current projects database. To import materials from a model outside the current project database, the user must
first import that model.
After selecting the source of the material properties, the user then selects which materials to import. Use the Ctrl key
to make multiple selections.
Click on Import to add the materials. If the selected materials already exist in the MPD file or database model, the
software will report that it is unable to import because the material(s) already exist. To overwrite the properties of an
existing material, check the Overwrite materials with the same name option before clicking on Import.
If the Materials Editor is accessed from the Function Manager, any imported material will be stored in the mpd file
and will affect all models. If the Materials Editor is accessed from within the Preprocessor, any imported material will
affect only the active model.
A material name can have no more than 32 characters.
Section 2: Material Properties Database Version 2010
U2-4 March 19, 2010 Coventor, Inc.
2.2: Property Types
The type of material property is selected from the first column of buttons next to each property line by choosing from
a pull-down menu. Each property type is associated with a different Edit window. The material properties and their
associated property types are shown in Table D2-1.
Table D2-1 Material Properties and Related Values
Material property Property type
Elastic Constant
Elastic-Iso, ElasticIsoTable-T, ElasticIsoPoly-T (ElasticIsoTable-T and Poly-T specify
Youngs Modulus and Poissons Ratio as a function of temperature), Elastic-Ortho, Elastic-
Ortho100 (for 100 crystallographic planes), Elastic-Ortho110-Right or Elastic-Ortho110-
Left (for 110 crystallographic planes), Elastic-Ortho111 (for 111 crystallographic planes),
Elastic-Cubic, and Elastic-AnIso
Density (kg/m
3
)
Constant-Scalar, Polynomial-T (temperature-dependent polynomials; see "Computing
Poly-T Values" on page U2-21), and Table-T (temperature-dependent table entries; see
"Computing Table-T Values on page U2-21)
Stress (MPa) Constant-Scalar, AnIso
TCE Integral Form (1/K)
Constant-Scalar, Constant-ZeroStressTemp, Polynomial-T, Poly-T-ZeroStressTemp, Table-
T, Table-T-ZeroStressTemp
Thermal Conductivity
(pW/mK)
Constant-Scalar, Polynomial-T, and Table-T
Specific Heat (pJ/kgK) Constant-Scalar, Polynomial-T, and Table-T
Electrical Conductivity
(pS/m)
Constant-Scalar, Constant-Scalar-JD, Polynomial-T, Table-T, Polynomial-(T, z) (dopant-
dependent polynomial), Table-(T,z) (dopant-dependent table entries), Table-(T,z)-JD,
Limited Diffusion
Dielectric Constant-Scalar, Piezoelectric Stress, Piezoelectric Strain, Polynomial-T, and Table-T
Viscosity (kg/m/s)
Constant-Scalar, Polynomial-T, PolyLog-T, Table-T, Bingham, Power Law, Carreau,
Casson, GenericViscosity
PiezoResistiveCoeffient
Constant-Scalar, Polynomial-T, Table-T, Constant-Scalar-100, Constant-Scalar-110-Right,
Constant-Scalar-110-Left, Constant-Scalar-111
Custom Properties File
File browser to select a text file containing material property data. The file name must end
with .inp.
Section 2: Material Properties Database Version 2010
Coventor, Inc. March 19, 2010 U2-5
M



2.2.1: Elastic Constants
The Elastic Constant material property specifies linear elastic behavior. The general constitutive relationship between
stress and strain can be written as
where [D] is the stiffness matrix.
The constitutive relationship can also be expressed as
where [D]
-1
is the compliance matrix.
Depending on the type of elasticity the user wants to specify, CoventorWare uses the compliance or the stiffness
matrices to describe the stress-strain relationship. The convention in CoventorWare is to order the stress and strain
tensors xx, yy, zz, xy, xz, yz and to use the common measure of the total shear strain engineering shear strain. Some
references order the tensors differently and/or use a different measure of the shear strain, such as the average shear
strain. The user should be careful to resolve any differences before entering reference material properties into the
database.
A material can be considered isotropic, orthotropic, or anisotropic. Isotropic materials have an infinite number of
symmetry planes passing through every point. Orthotropic materials have two orthogonal symmetry planes for the
elastic property. Anisotropic materials have no symmetry planes. When specifying the elastic constants, the user has
these options:
Elastic-Iso: The user specifies elasticity using Youngs modulus E (in MPa), and Poissons ratio . CoventorWare
uses the compliance matrix to define the stress-strain relationship:
These stability requirements must be met: E > 0, and -1 < < 0.5. Poisson ratio values close to 0.5 result in nearly
incompressible behavior; for these ratios some convergence problems may occur.
ElasticIsoTable-T: The user specifies Youngs modulus E (in MPa) and Poissons ratio as a function of temperature
(T in Kelvin). The data must be given in increasing order of temperature. CoventorWare will interpolate linearly for

xx

yy

zz

xy

xz

yz
D
1111
D
1122
D
1133
D
1112
D
1113
D
1123
D
2211
D
2222
D
2233
D
2212
D
2213
D
2223
D
3311
D
3322
D
3333
D
3312
D
3313
D
3323
D
1211
D
1222
D
1233
D
1212
D
1213
D
1223
D
1311
D
1322
D
1333
D
1312
D
1313
D
1323
D
2311
D
2322
D
2333
D
2312
D
2313
D
2323

xx

yy

zz

xy

xz

yz
=
[ ] D [ ] [ ] =
[ ] D [ ]
1
[ ] =

xx

yy

zz

xy

xz

yz
1 E E E 0 0 0
E 1 E E 0 0 0
E E 1 E 0 0 0
0 0 0 2 1 + ( ) E 0 0
0 0 0 0 2 1 + ( ) E 0
0 0 0 0 0 2 1 + ( ) E

xx

yy

zz

xy

xz

yz
=
Section 2: Material Properties Database Version 2010
U2-6 March 19, 2010 Coventor, Inc.
the values of E and between those given. E and would be assumed to constant outside the range of given T.
The simple compliance matrix as shown for ElasticIso is calculated and used to define the stress-strain relationship at
each temperature.
ElasticIsoPoly-T: The user specifies polynomials for the following equations:
Using the polynomial coefficients, CoventorWare will first create a ElasticIsoTable of E vs T and vs T for a range of
temperature from 100K to 1900K with a step value of 100K. This table of values will be computed even before the
simulation starts. In the actual simulation, E and will be calculated through a linear interpolation within those eigh-
teen sub-ranges as in ElasticIsoTable-T. The final compliance matrix calculation at each temperature would be done
as in Elastic-Iso.
Elastic-Cubic: The user specifies elasticity using Youngs modulus E (in MPa), Poissons ratio and shear modulus
G. The compliance matrix is used to define the stress-strain relationship as follows:
These stability requirements must be met:
E > 0
G > 0
-1 < < 0.5
Poisson ratio values close to 0.5 result in nearly incompressible behavior; for these ratios some convergence problems
may occur.
Elastic-Ortho: The user specifies the elasticity in an orthotropic material using E
1
,

E
2
, E
3
(in MPa),

12
,
13
,
23
,
and G
12
, G
13
, G
23
(in MPa). The compliance matrix is used to define the stress-strain relationship as follows:
The quantity i
j
has the physical interpretation of the Poisson's ratio that characterizes the transverse strain in the j-
E A
0
A
1
T A
2
T
2
A
3
T
3
A
4
T
4
A
5
T
5
+ + + + + =
A
0
A
1
T A
2
T
2
A
3
T
3
A
4
T
4
A
5
T
5
+ + + + + =

xx

yy

zz

xy

xz

yz
1 E E E 0 0 0
E 1 E E 0 0 0
E E 1 E 0 0 0
0 0 0 1 G 0 0
0 0 0 0 1 G 0
0 0 0 0 0 1 G

xx

yy

zz

xy

xz

yz
=

xx

yy

zz

xy

xz

yz
1 E
1

21
E
2

31
E
3
0 0 0

12
E
1
1 E
2

32
E
3
0 0 0

13
E
1

23
E
2
1 E
3
0 0 0
0 0 0 1 G
12
0 0
0 0 0 0 1 G
13
0
0 0 0 0 0 1 G
23

xx

yy

zz

xy

xz

yz
=
Section 2: Material Properties Database Version 2010
Coventor, Inc. March 19, 2010 U2-7
M



direction, when the material is stressed in the i-direction. In general, i
j
is not equal to ji: they are related by
i
j
/Ei =
ji
/E
j
The material stability requirements are
E
1
,

E
2
,

E
3,
G
12
, G
13
, G
23
> 0
|
12
| < (E
1
/E
2
)
1/2
|
13
| < (E
1
/E
3
)
1/2
|
23
| < (E
2
/E
3
)
1/2
1
12

21

23

32

31

13
2
21

32

13
> 0
When the left-hand side of the inequality approaches zero, the material exhibits incompressible behavior. Using the
relations
ij
/ E
i
=
ji
/ E
j
, the second, third, and fourth restrictions in the above set can also be expressed as
|
21
| < (E
2
/E
1
)
1/2
|
31
| < (E
3
/E
1
)
1/2
|
32
| < (E
3
/E
2
)
1/2
Elastic-Ortho100, 110-Right, 110-Left, 111: These options are for Silicon 100, Silicon 110, or Silicon 111 wafers.
Crystalline silicon is a cubic material, i.e. it requires three independent material constants to describe its behavior.
The values of these constants, which can be found in literature, are
D11 = D22 = D33 = 165 GPa
D12 = D13 = D23 = 64 GPa
D44 = D55 = D66 = 80 GPa (Note that CoventorWare units are MPa)
In order to assign correct material properties for using MemPZR or Architects PZR models, use the Elastic-
Ortho100, Elastic-Ortho110-Right, Elastic-Ortho110-Left, or Elastic-Ortho111 option, depending on wafer orienta-
tion; see details below. For orthotropic materials CoventorWare accepts the engineering constants, E, , and G that
are associated with the coefficients of the compliance matrix (where the units for E and G are in MPa), rather than the
values of the stiffness matrix, D11 to D66, listed above.
E1 = E2 = E3 = 1.30191e+5
12 = 13 = 23 = 2.78340e-1
G12 = G13 = G23 = 7.96240e+4
These values correspond to the cube principal axes; therefore, depending on the wafer type as defined by its flat and
top normals, the wafer should be oriented so that these normals point in the correct direction with respect to the global
coordinate system. For example, by default the global coordinate system (X,Y,Z) coincides with the cube principal
axes. As such, the X, Y and Z axes are parallel with the normals of <100> planes. However, Silicon 100 wafers, have
a flat normal along the <110> crystalline direction that is at 45 degrees from the <100> direction. Hence, the wafer
should be rotated by 45 degrees about the Z-axis so that the flat normal points in the right direction. CoventorWare
simplifies this task by rotating the material properties instead of the part itself, thus preserving invariant quantities
such as Mises stress.
To take advantage of this feature in CoventorWare, do the following:
For Silicon 100 wafers
Align the wafer top normal with the Z-axis.
Align the wafer flat normal with the negative Y-axis.
Select Elastic-Ortho100 when defining Elastic Constants.
Select Constant_Scalar100 when defining Piezoresistive Coefficients (see page U2-18 for more information
on this material property).
Section 2: Material Properties Database Version 2010
U2-8 March 19, 2010 Coventor, Inc.
For Silicon 110 wafers
Align the wafer top normal with the Z-axis.
Align the wafer primary flat normal with the negative Y-axis.
If the secondary flat is to the right of the primary flat, select Elastic-Ortho110-Right when defining Elastic
Constants.
If the secondary flat is to the left of the primary flat, select Elastic-Ortho110-Left when defining Elastic Con-
stants.
For Silicon 111 wafers
Align the wafer top normal with the Z-axis.
Align the wafer flat normal with the negative X-axis.
Select Elastic-Ortho111 when defining Elastic Constants.
Select Constant_Scalar111 when defining Piezoresistive Coefficients (see page U2-18 for more information).
Part orientation is not critical if the material is isotropic.
Elastic-AnIso: The user defines elasticity in anisotropic materials using twenty-one independent elastic stiffness
parameters. The stress-strain relations are calculated as follows:
The material stability requirements are too complicated to be expressed in simple equations. It is required that the
det[D] is positive definite, and hence, all of the eigenvalues of the elasticity matrix should be positive.
2.2.2: Density
This material property must be defined for transient dynamic analysis, transient heat transfer analysis, modal analy-
sis, and adiabatic stress analysis. Density can be specified as a function of temperature using the Poly-T or Table-T
options.
2.2.3: Stress
This property value defines stress introduced during the fabrication process. The Constant-Scalar option defines a
stress value equal in the X, Y, and Z directions. The Anisotropic option can be used to define different stress values
for the X, Y, and Z directions.
For an on-line tutorial that demonstrates how to compute Youngs modulus and Poissons ratio for any elastic
material with cubic symmetry, go to http://www.kaajakari.net/%7Eville/research/tutorials/tutorials.html, and select
the "Silicon as an anisotropic mechanical material" tutorial.
A Constant-Scalar input of stress produces warning messages in Architect because the stress in the Z-direction is
not taken into account in Architect models; instead the Constant-Scalar input will be interpreted as an in-plane
stress of constant value.

xx

yy

zz

xy

xz

yz )




`





D
1111
D
1122
D
1133
D
1112
D
1113
D
1123
0 D
2222
D
2233
D
2212
D
2213
D
2223
0 0 D
3333
D
3312
D
3313
D
3323
0 0 0 D
1212
D
1213
D
1223
0 0 0 0 D
1313
D
1323
0 0 0 0 0 D
2323

xx

yy

zz

xy

xz

yz )




`





=
symmetric
Section 2: Material Properties Database Version 2010
Coventor, Inc. March 19, 2010 U2-9
M



Use negative values for compressive prestress conditions, and use positive values for tensile prestress conditions.
Although stress cannot be specified as a function of a variable from within the MPD, it can be varied using the Mem-
Mech boundary conditions. See the MemMech boundary conditions reference section, starting on page R4-79.
2.2.4: TCE
This material property is used to compute thermal strains. In addition to the Constant-Scalar, Table-T, and Poly-T
options, there are the Constant-ZeroStressTemp, Poly-T-ZeroStressTemp, and Table-T-ZeroStressTemp options. These
options allow the user to input a zero stress temperature, which is the temperature at which there is no thermally
induced stress. The temperature used to calculate the stress is the difference between the simulation temperature and
the zero-stress temperature.
The zero-stress options can be used to calculate stresses resulting from fabrication. For example, assume that a mate-
rial is stress free when deposited under high-temperature conditions. If the material is bonded to another material,
when it cools down the two bonded materials will contract at different rates, and there will be stress and possibly
deformation in both materials. The user can specify the temperature of deposition as the zero-stress temperature, then
simulate at another temperature, such as the normal operating temperature of the device, and account for thermally
induced stresses.
For thermomechanical analyses without the zero stress temperature defined, the default zero stress temperature is
273.15 K.
TCE and MemMech
MemMech and CoSolveEM use MPD-specified density vs. temperature data as an initial condition only. All subse-
quent calculations are based on a linear thermal expansion of coefficients.
Some handbooks give the temperature expansion values in differential form:
where
th
is the thermal strain, is the temperature coefficient, and is the current temperature.
MemMech requires the temperature coefficient of expansion values to be in integral form. Use the following equation
to convert to the integral form:
where
0
is a chosen reference temperature.
To illustrate, assume ' is a series of constant values:
1
' between
0
and
1
;
2
' between
1
and
2
;
3
' between

2
and
3
and so forth. Then,
The corresponding expansion coefficients required by the solver are obtained as
d
th
' ( )d =

th
' d

}
( )
1

0

-------------- ' d

}
= =

1
th

1
'
1

0
( ) =

2
th

1
th

2
'
2

1
( ) + =

3
th

2
th

3
'
3

2
( ) + =
Section 2: Material Properties Database Version 2010
U2-10 March 19, 2010 Coventor, Inc.
The Table-T and Table-T ZeroStressTemp options require the explicit input of the
i
and
i
values in the form of a
table.
For the Poly-T and Poly-T-ZeroStressTemp options, MemMech uses the user-input Ai coefficients to automatically
generate the table of
i
and
i
values. For the Poly-T option, MemMech generates a table of nineteen
i
,
i
pairs
beginning at
1
= 100.0 and ending at
19
= 1900.0 degrees. For the Poly-T-StressZeroTemp option, MemMech gener-
ates a table of
i
,
i
pairs beginning at
1
= 5.0, incrementing
i
by 5.0 degrees until reaching a maximum value of 5.0
x
0
.
It is important to remember that if the analysis temperature in an element is greater than the last value in either the
user-input or MemMech-generated table, MemMech simply takes the last value in the table for . If the analysis tem-
perature in an element is lower than the first value in either the user-input or MemMech-generated table, MemMech
simply takes the first value in the table for . There is no extrapolation beyond the minimum or maximum tempera-
tures in the table.
TCE and Fluidics
The fluidics solvers do not use the MPD-specified density vs. temperature data; instead, TCE is considered a volu-
metric expansion coefficient regardless of whether it is a solid or a liquid or gas. When using the fluidics solvers the
volume expansion coefficient must be set for all materials. The volume expansion coefficient is roughly three times
the linear expansion coefficient (provided the coefficient is relatively small). The functional form for the TCE value
is given by the following equation:
where
0
is the density at temperature T
0
, and is the volume expansion coefficient specified by the TCE value in the
MPD. T
0
is always assumed to be 293 K.
2.2.5: Thermal Conductivity
This material property must be defined for uncoupled heat transfer, coupled thermal stress, and coupled-thermal-elec-
trical analyses. The Polynomial-T and Table-T options allow thermal conductivity to be specified as a function of
temperature.
2.2.6: Specific Heat
This material property must be defined for uncoupled heat transfer, coupled thermal-stress, and coupled thermal-elec-
trical analyses. When specifying this material property, the Density property must also be set.

1
th

0
( ) =

2
th

0
( ) =

3
th

0
( ) =

0
1 T T
0
( ) ( ) =
Section 2: Material Properties Database Version 2010
Coventor, Inc. March 19, 2010 U2-11
M



2.2.7: Electrical Conductivity
Electrical conductivity must be defined for coupled thermo-electrical analysis and for piezoresistive analysis. This
material type has several options:
Constant Scalar-JD: This option allows the user to specify junction depth. This indicates that the material will be
conductive where it is doped (from the surface to the junction depth). The conductivity is constant in this region.
PolynomialT, Table-T: These options allow the user to specify electrical conductivity as a function of temperature.
Polynomial-(T, z), Table-(T, z): These allow for conductivity that varies with both temperature and depth into the
material. Both values are defined by polynomials entered in separate columns.
Table-(T, z)-JD: Conductivity varies with both temperature and depth in the material but is restricted to the region
between the surface and junction depth.
Limited Diffusion: With this option, the concentration profile of the dopant is computed throughout the device from
user-supplied process parameters. Conductivity is defined by a power law and is computed in the device using the
values of concentration and temperature at the given location.
Temperature-Dependent Electrical Conductivity
To specify a temperature-dependent electrical conductivity, choose either the Table-T or Polynomial-T options. If the
Polynomial-T property type is selected, the range of temperatures used to calculate the property is 300 K to 700 K in
increments of 20 K. Outside this range, the property is assumed constant at its low 300 K or high 700 K value. An
error is generated for any coefficient that results in a zero or negative value.
Dopant Concentration-Dependent Electrical Conductivity
Two models are available in this case: direct-depth dependent electrical conductivity and limited-diffusion models.
Direct-Depth Dependence Model
In this model, the electrical conductivity, , is represented mathematically as
=
1
(z)
2
(T)
where
1
and
2
are user-defined functions that could be entered in a table format (option Table-(T,z)), or as second
order polynomials in their respective arguments by defining the three coefficients for each polynomial
(option Polynomial-(T,z)).
If is a function of depth only:
=
1
(z)
then
2
(T) should be defined as the unity function
2
(T) = 1 for all values of T. This model allows the user to take
advantage of experimental data of conductivity, which are often measured directly versus depth.
If the Polynomial-(T,z) property type is selected for electrical conductivity, the range of temperatures used to calcu-
late the property is 300 K to 700 K in increments of 20 K. Outside this range, the property is assumed constant at its
low 300 K or high 700 K value. The range for depth is 0 to 2 m in increments of 0.1 m. An error is generated for
any coefficient that results in a zero or negative value.
Limited-Diffusion Model
In this model the concentration profile of the dopant is computed throughout the resistor from the user-supplied pro-
cess parameters. The conductivity is defined by a power law and is computed in the resistor using the values of the
concentration and temperature at the given location.
The dopant concentration profile is computed according to the following Gaussian distribution:
where
Section 2: Material Properties Database Version 2010
U2-12 March 19, 2010 Coventor, Inc.
N: the dopant concentration (atoms /m
3
)
Q: the initial surface concentration dose (atoms /m
2
)
t: the process diffusion time (seconds)
D: the process dopant diffusion coefficient D = D
0
e [-E
A
/ k T]
where
D
0
: dopant diffusion coefficient (m
2
/sec)
E
A
: the activation energy of the dopant (eV)
k: Boltzmann's constant (8.617e-5 eV/K)
T: the diffusion process temperature (Kelvin)
See Table D2-2 below for values of D
0
and E
A
for several commonly used dopants.
Table D2-2 D
0
and E
A
Values for Several Commonly Used Dopants
Source: Richard C. Jaeger, Introduction to Microelectronic Fabrication, ed.: G.W. Neudeck and R.F. Pierret, vol
5 of Modular Series on Solid State Devices (Addison-Wesley Publishing, Reading, MA, 1988).
In addition to the concentration profile parameters, the user is also required to specify N
0
, the residual dopant concen-
tration in the wafer to determine the junction depth, after which the conductivity assumes the magnitude of the con-
ductivity of the wafer material.
The next step is to specify the functional dependence of the conductivity on the dopant concentration and tempera-
ture. This is done as follows:
= N
x
T
y
where , x, and y are user-defined values. In some applications, such as pressure transducers, the resistor may be at a
uniform temperature, rendering the conductivity to be mainly a function of concentration, and thus the user would
specify y = 0. Parameters , x and y are found experimentally. For example, the following simple power law:
= 63080.0 N
0.757
is constructed for the p-doped silicon using a graph (see Figure D2-2) that plots the room temperature resistivity in n-
and p-doped silicon as a function of impurity concentration.
Dopant
D
0
*
10
8
(m
2
/sec) E
A
(eV)
B 10.5 3.69
Al 8.0 3.47
Ga 3.6 3.51
In 16.5 3.90
P 10.5 3.69
As 0.32 3.56
Pb 5.6 3.95
N z t , ( )
Q
D t ( )
--------------------------- e
z
2
4Dt
---------
\ .
| |
=
Section 2: Material Properties Database Version 2010
Coventor, Inc. March 19, 2010 U2-13
M



Figure D2-2 Resistivity Graph
Figure D2-2 shows room temperature resistivity in n- and p-type silicon as a function of impurity concentration.
(Note that these curves are valid for either donor or acceptor impurities, but not for compensated material containing
both types of impurities.)

2.2.8: Dielectric
The value in the window for the Dielectric Constant determines whether the material is declared as a Conductor (low
values) or Dielectric (high values) in the Preprocessor (see page D4-2). The user can change the default before mesh-
ing. Note that the user has to enter dielectric values relative to the vacuum permittivity.
Piezoelectric Analysis
The Dielectric property type has two options that can be used to run piezoelectric analysis: PiezoElectric-Strain
(strain-charge constitutive relation) and PiezoElectric-Stress (stress-charge constitutive relation). The users choice
depends on the units of piezoelectric constants being used. If these constants are in C/N (m/V in CoventorWare
units), select PiezoElectric-Strain, and the coupling matrix would be d. If the constants are in C/m
2
(which translates
into C/m
2
=pC/m
2
in CoventorWare units), select PiezoElectric-Stress, and the coupling matrix would be e.
The pioezoelectric equations written in the Strain-Charge form are
In the power law, N and are in CoventorWare units of atoms/m
3
and pS/m respectively. For more information
see Volume V: Introduction to Microelectronics Fabrication, Gerold W. Neudeck, Robert F. Pierret, Editors.
Modular Series on Solid State Devices, Richard C. Jaeger, page 60.
Reprinted with permission from:
R.F. Pierret, Advanced Semiconductor Fundamentals, Volume VI in the modular Series on Solid State Devices,
Addison-Wesley Publishing, Reading, MA, 1987.
[ ] D [ ]
E [ ] 0 =
1
[ ] d [ ]
t
E [ ] + =
(1a)
Section 2: Material Properties Database Version 2010
U2-14 March 19, 2010 Coventor, Inc.
where
[] is the strain matrix m/m
[] is the stress matrix N/m
2
[E] is the electric field vector N/pC, V/m
[
Q
] is the electric charge density displacement vector, pC/m
2
[d] is the PZE-strain coupling matrix, pC/N, m/V
[D]
-1
[E]=0
is the material compliance matrix when there is no electrical field; i.e. [E] =0, m
2
/N
[]
[]=0
is the electrical permittivity (dielectric constant) matrix when there is no stress; i.e. [] =0, pC/Vm, pF/
m
The piezoelectric equations written in stress-charge form are
where
[e] is the PZE-stress coupling matrix pC/m
2
[D]
[E]=0
is the material stiffness matrix when there is no electrical field; i.e. [E] =0, N/m
2
, MPa
[]
[]=0
is the electrical permittivity (dielectric constant) matrix when there is no strain; i.e. [] =0, pC/Vm, pF/
m
The relationship between the PZE-strain coupling matrix and the PZE-stress coupling matrix is given by the follow-
ing equation:
The first part of the right side of equations (1a) and (2a) are governed by the user-specified material stress-strain con-
stitutive relationship shown on page U2-5. The second part of the right side of equations (1a) and (2a) are governed
by the piezoelectric coefficients.

Q
[ ] d [ ] [ ] [ ]
[ ] 0 =
E [ ] + =
(1b)
[ ] D [ ]
E [ ] 0 =
[ ] e [ ]
t
E [ ] =
(2a)

Q
[ ] e [ ] [ ] [ ]
[ ] 0 =
E [ ] + =
(2b)
e [ ] d [ ] D [ ]
E [ ] 0 =
=
Section 2: Material Properties Database Version 2010
Coventor, Inc. March 19, 2010 U2-15
M



CoventorWare Coupling Coefficient Conventions
Piezoelectric Strain-Charge Form
Standard handbooks on piezoelectric material give the coefficients for the strain-charge format in this form:
where S = the strain matrix, and E = the electric field vector, as shown below:
Some handbooks follow the notation of xx, yy, zz, yz, zx, and xy, respectively, while some others follow xx, yy, zz,
xy, yz, zx. The subscripts in CoventorWare in order are xx, yy, zz, xy, zx, and yz, respectively. Industry-supplied
piezoelectric data often use a double index notation. The double index notation can be easily converted to the
required triple index notation in MemMech by noting the following correspondence between the (second-order) ten-
sor and vector notations: the 11, 22, 33, 12, 13, and 23 components of the tensor correspond to the 1, 2, 3, 4, 5, and 6
components, respectively, of the corresponding vector. So the PZE Strain matrix convention followed in Coventor-
Ware is
where
S d
t
E =

xx

yy

zz

yz

zx

xy
aora

xx

yy

zz

yz

zx

xy
d
11
d
21
d
31
d
12
d
22
d
32
d
13
d
23
d
33
d
14
d
24
d
34
d
15
d
25
d
35
d
16
d
26
d
36
E
x
E
y
E
z
=

xx

yy

zz

xy

zx

yz
d
1 11 ,
d
2 11 ,
d
3 11 ,
d
1 22 ,
d
2 22 ,
d
3 22 ,
d
1 33 ,
d
2 33 ,
d
3 33 ,
d
1 12 ,
d
2 12 ,
d
3 12 ,
d
1 13 ,
d
2 13 ,
d
3 13 ,
d
1 23 ,
d
2 23 ,
d
3 23 ,
E
x
E
y
E
z
=
d [ ]
t
d
1 11 ,
d
2 11 ,
d
3 11 ,
d
1 22 ,
d
2 22 ,
d
3 22 ,
d
1 33 ,
d
2 33 ,
d
3 33 ,
d
1 12 ,
d
2 12 ,
d
3 12 ,
d
1 13 ,
d
2 13 ,
d
3 13 ,
d
1 23 ,
d
2 23 ,
d
3 23 ,
= =
Section 2: Material Properties Database Version 2010
U2-16 March 19, 2010 Coventor, Inc.

The user has to determine if the source handbook is using or for the shear strains (note
xy
=
xy
+
yx
= 2
xy
)
and the order of the subscripts of the coupling coefficients, and then suitably modify the coefficients before entering
them into the CoventorWare Material Properties Database. The standard nomenclature, as per, Mechanics and
Behavior of Materials, Frank McClintock & Ali S. Argon, Addison-Wesley Pub., 1966, is that the shear components
are in terms of .
Thus, if the handbook has the PZE strain coupling matrix as
CoventorWare users should use
The Dielectric entries shown in the Edit PiezoElectric-Strain window are relative values to vacuum permittivity
o

= 8.85 x 10
-6
pC/(Vm).
d
a b c d e f
g h i j k l
m n o p q r
aorad
t
a g m
b h n
c i o
d j p
e k q
f l r
a = =
C/N (or m/V)
d
t
a g m
b h n
c i o
2f 2l 2r
2e 2k 2q
2d 2j 2p
10
6
aaaa = if the handbook uses for shear strain m/V
d
t
a g m
b h n
c i o
f l r
e k q
d j p
10
6
aaaa =
if the handbook uses for shear strain
m/V
Section 2: Material Properties Database Version 2010
Coventor, Inc. March 19, 2010 U2-17
M



Piezoelectric Stress-Charge Format
Typical handbooks use the following:
where T = stress matrix and E = the electric field matrix, shown in the following:
The subscripts in CoventorWare are in order of xx, yy, zz, xy, zx, and yz. respectively. So the PZE stress matrix
convention followed in CoventorWare is
where
Thus, if the handbook has the PZE stress coupling matrix as
T e
t
E =

xx

yy

zz

yz

zx

xy
e
11
e
21
e
31
e
12
e
22
e
32
e
13
e
23
e
33
e
14
e
24
e
34
e
15
e
25
e
35
e
16
e
26
e
36

E
x
E
y
E
z
=

xx

yy

zz

xy

zx

yz
e
1 11 ,
e
2 11 ,
e
3 11 ,
e
1 22 ,
e
2 22 ,
e
3 22 ,
e
1 33 ,
e
2 33 ,
e
3 33 ,
e
1 12 ,
e
2 12 ,
e
3 12 ,
e
1 13 ,
e
2 13 ,
e
3 13 ,
e
1 23 ,
e
2 23 ,
e
3 23 ,

E
x
E
y
E
z
=
e [ ]
t
e
1 11 ,
e
2 11 ,
e
3 11 ,
e
1 22 ,
e
2 22 ,
e
3 22 ,
e
1 33 ,
e
2 33 ,
e
3 33 ,
e
1 12 ,
e
2 12 ,
e
3 12 ,
e
1 13 ,
e
2 13 ,
e
3 13 ,
e
1 23 ,
e
2 23 ,
e
3 23 ,
= =
Section 2: Material Properties Database Version 2010
U2-18 March 19, 2010 Coventor, Inc.
CoventorWare users should use
2.2.9: Viscosity
This material property is applicable to fluidics problems. The Bingham, Power Law, Carreau, Casson, and Generic-
Viscosity options can be used to model non-Newtonian fluids. See page F10-7 for details.
2.2.10: Piezoresistive Coefficients
CoventorWares MemPZR module and Architect PZR models use this material property in its computation of the
change in resistivity of a piezoresistive material subject to mechanical deformation. The piezoresistive phenomenon
in semiconductors is linked to a change in the resistivity in response to an applied stress. To represent this effect
mathematically, we show Ohms Law in the stress-free state:

where E
i
, i
i
are the electric field and current density respectively parallel to the x
i
crystallographic axis, and
0
is the
stress-free resistivity, which may be tensorial in general.
When a stress field is applied, the resistivity is modified and becomes anisotropic. The change in resistivity is related
to the stress tensor through the empirically determined piezoresistive coefficient. For a general material, a total of 81
coefficients (similar to the elastic constants) will be needed. However, for crystals with cubic symmetry like silicon
and germanium, the number is drastically reduced to only three independent coefficients:
11
,
12
, and
44,
which are
tabulated below for the widely used n-type and p-type silicon.


0
(ohmcm)
11
(MPa
-1
)
12
(MPa
-1
)
44
(MPa
-1
)
n-type 11.7 -102.2e-05 53.4e-05 -13.6e-05
p-type 7.8 6.6e-05 -1.1e-05 138.1e-05
e
a b c d e f
g h i j k l
m n o p q r
aorae
t
a g m
b h n
c i o
d j p
e k q
f l r
= =
C/m
2

e
t
a g m
b h n
c i o
f l r
e k q
d j p
aa = pC/m
2
E
1
E
2
E
3

0
1 0 0
0 1 0
0 0 1
i
1
i
2
i
3
=
(1)
Section 2: Material Properties Database Version 2010
Coventor, Inc. March 19, 2010 U2-19
M



It is important to note that these values are defined with respect to the principal crystallographic axes (<100>, <010>,
<001>) of the material. Therefore, to properly compute the change in resistivity in a numerical simulation, the model
must be oriented carefully so that the underlying wafer's flat and normal are correctly positioned with respect to the
global coordinate system of the solid model.
Two methods are provided for entering the piezoresistive material properties. Standard MPD dialogs are available for
many commonly encountered cases. For MemMech and MemPZR users, a file-based method, described in Custom
Properties File on page U2-21, is available for more advanced cases. The standard dialog method is described in this
section.
The material types Constant_Scalar, Polynomial_T, and Table_T assume the crystallographic axes of the piezoresis-
tive material are aligned with the axes of the global system of reference, which corresponds to (100) wafer orienta-
tion.
The remaining types, Constant_Scalar100, Constant_Scalar110_Right, Constant_Scalar110_Left, and
Constant_Scalar111, refer to a specific orientation for the piezoresistive coefficients. The 100, 110. and 111 in these
names refer to the (100), (110), and (111) wafer orientations. By specifying the piezoresistive coefficients as one of
these types, CoventorWare will transform the tensor of coefficients to align one particular direction <110> with
the global X-axis for the (100), (110), and (111) wafer type, respectively.
In other words, these material properties correspond to a frame of reference with the X axis perpendicular to the pri-
mary flat for those types of wafers.
For a cubic material, the change in resistivity matrix, D, is computed as follows:
where
ij
are the stress tensor components (
11
,
22
, and
33
are normal stresses, while
13
,
23
, and
12
are shear
stresses).
For an orthotropic material, the change in resistivity matrix, D, is computed as
d
11
d
22
d
33
d
13
d
23
d
12

11

12

12
0 0 0

12

11

12
0 0 0

12

12

11
0 0 0
0 0 0
44
0 0
0 0 0 0
44
0
0 0 0 0 0
44

11

22

33

13

23

12
=
(2)
d
11
d
22
d
33
d
13
d
23
d
12

11

12

13
0 0 0

12

22

23
0 0 0

13

23

33
0 0 0
0 0 0
44
0 0
0 0 0 0
55
0
0 0 0 0 0
66

11

22

33

13

23

12
=
(2)
Section 2: Material Properties Database Version 2010
U2-20 March 19, 2010 Coventor, Inc.
and for a general, anisotropic material, the change in resistivity matrix, D, is computed as
Ohms Law is modified with the new resistivity matrix as follows:

CoventorWare uses the Galerkin finite element method to solve Ohms Law. More specifically, the software solves
for the potential (voltage) as the unknown variable. The potential equation is derived as follows:
From (3) we write:

where S
0
= 1/
0
is the stress-free electrical conductivity, which in general may have a temperature dependence as
well as depth variation. Both effects can be modeled by CoventorWare.
Recalling that

and

where equation (6) simply states that charge is conserved.
Using (5) and (6) we arrive at the potential equation solved by CoventorWare:

The boundary conditions associated with (7) are
specified voltage
specified current
non-conducting surface (default)
combination of the above
links
d
11
d
22
d
33
d
13
d
23
d
12

11

12

13

14

15

16

21

22

23

24

25

26

31

32

33

34

35

36

41

42

43

44

45

46

51

52

53

54

55

56

61

62

63

64

65

66

11

22

33

13

23

12
=
(2)
E
1
E
2
E
3

0
1 d
11
+ d
12
d
13
d
12
1 d
22
+ d
23
d
13
d
23
1 d
33
+
i
1
i
2
i
3
=
(3)
I S
0
D
1
[ ]E =
(4)
E V
1
=
(5)
I 0 = (6)
S D
1
[ ]V ( ) 0 =
(7)
Section 2: Material Properties Database Version 2010
Coventor, Inc. March 19, 2010 U2-21
M



2.2.11: Computing Poly-T Values
Several property types have a Poly-T option.These options use polynomials to define temperature-dependent proper-
ties using the following equation:
2.2.12: Computing Table-T Values
When using the Table-T option, note the following:
Each table has ten rows. If a row is not set, i.e. the temperature is left at 0, the software will ignore that row
and any row after it.
Data must be entered with increasing temperature values.
The property value associated with each temperature value is determined by experiment or can be found in reference
handbooks.
2.2.13: Custom Properties File
The Custom Properties File is a text file that allows MemMech and MemPZR users to define more advanced forms
for some of the material properties described above. This file is selected using a standard file browser, and its name
must end with the .inp extension.
The file consists of one or more "keyword blocks." A keyword block begins with an "*" in the first column, followed
by a material property keyword. This keyword may be followed by a comma and additional comma-separated options
that provide information about the material property. Following this keyword line are one or more lines containing
the actual material property data. The data in the individual lines are separated by spaces. For example, consider a
definition for temperature-dependent, anisotropic thermal conductivity:
*conductivity, type=aniso
1.e-3, 2.e-4, 3.e-3, 3.e-4, 4.e-5, 1.3e-3, 300.0
2.e-3, 2.e-4, 5.e-3, 3.e-4, 1.e-5, 2.3e-3, 350.0
3.e-3, 2.e-4, 6.e-3, 3.e-4, 2.e-5, 3.3e-3, 400.0
Most of the material properties can be temperature dependent. In these cases, the temperature value at which the
property is valid is the last entry. As many lines as necessary to define the temperature may be entered but the temper-
atures must be in order of increasing value. Property values at intermediate temperatures values are linearly interpo-
lated. Property values for temperatures outside the input temperatures are assumed to be constant. If the properties are
independent of temperature, the user can omit the temperature value on the input line.
Additional syntax rules for keyword and data lines include
A line can include no more than 256 characters, including spaces.
Keywords and parameters are not case-sensitive.
If a keyword line has to be continued to a second line, the last character of the first line should be a comma;
then the next line is interpreted as a continuation of the previous line.
A value given in the form of a floating point number can occupy a maximum of twenty spaces, including the
sign, decimal point, and any exponential notation.
An integer value can occupy a maximum of ten digits.
Character strings can be up to 80 characters long and are not case sensitive.
If a data line is continued to another line, a single data item cannot be entered over more than one line.
The available material property keyword blocks are defined in detail below.
property A
0
A
1
T A
2
T
2
A
3
T
3
A
4
T
4
A
5
T
5
+ + + + + =
Section 2: Material Properties Database Version 2010
U2-22 March 19, 2010 Coventor, Inc.
*conductivity
This keyword block defines thermal conductivity for the material.
Options
type
Set type=iso (default), type=ortho, or type=aniso to define isotropic, orthotropic, or anisotropic thermal
conductivities, respectively.
Data lines to define isotropic thermal conductivity(type=iso):
k, temperature
Repeat this data line as often as necessary to define the thermal conductivity as a function of temperature.
Data lines to define orthotropic thermal conductivity(type=ortho):
k
11
, k
22
, k
33
, temperature
Repeat this data line as often as necessary to define the thermal conductivity as a function of temperature.
Data lines to define anistropic thermal conductivity(type=aniso):
k
11
, k
12
, k
22
, k
13
, k
23
, k
33
, temperature
Repeat this data line as often as necessary to define the thermal conductivity as a function of temperature.
*damping
This keyword block defines material damping.
Options
alpha
Defines the mass proportional damping coefficient. If left undefined, alpha=0.0.
beta
Defines the stiffness proportional damping coefficient. If left undefined, is beta=0.0.
There are no input lines associated with the *damping keyword block.
*dielectric
This keyword block defines the dielectric properties of the material. Note that from the Materials Editor dialog
accessed from within CoventorWare, the user has to enter dielectric values relative to the vacuum permittivity. But in
the custom properties file, the entries in the dielectric keyword block must be in absolute dielectric values in units of
pF/m. For example, if the material is AIR, the dielectric values when entered through the Materials Editor would be
1.0, but when entered into the custom properties file the dielectric value would be 8.854e-6.
Note that for piezoelectric analysis, both the *dielectric and *piezoelectric keywords must be defined. See page U2-
25 for information on the *piezoelectric keyword.
Options
type
Set type=iso (default), type=ortho, or type=aniso to define isotropic, orthotropic, or anisotropic dielectric
properties, respectively.
Data lines to define the absolute dielectric constant for an isotropic material (type=iso)
Section 2: Material Properties Database Version 2010
Coventor, Inc. March 19, 2010 U2-23
M



, temperature
Repeat this line as often as necessary to define the dielectric constant as a function of temperature.
Data lines to define the absolute dielectric constants for an orthotropic material (type=ortho)

11
,
22
,
33
, temperature
Repeat this line as often as necessary to define the dielectric constants as a function of temperature.
Data lines to define the absolute dielectric constants for an anisotropic material (type=aniso)

11
,
12
,
22
,
13
,
23
,
33
, temperature
Repeat this line as often as necessary to define the dielectric constants as a function of temperature.
*elastic
This keyword block defines linear elastic moduli for the material.
Options
type
type=isotropic: defines isotropic elastic behavior (Default)
type=engineering constants: defines orthotropic behavior in terms of the 3-dimensional elastic moduli,
Poissons ratios, and shear moduli.
type=orthotropic: defines orthotropic behavior in terms of the elastic stiffness coefficients.
type=anisotropic: defines fully anisotropic behavior in terms of the stiffness coefficients.
Data lines to define isotropic elasticity(type=isotropic):
First line:
E, u, temperature
Repeat this data line as often as necessary to define elasticity as a function of temperature.
Data lines to define orthotropic elasticity in terms of moduli(type=engineering constants):
First line:
E
1
, E
2
, E
3
,
12,

13
,

23
, G
12
, G
13
Second line:
G
23
, temperature
Repeat this set of data lines as often as necessary to define elasticity as a function of temperature.
Data lines to define orthotropic elasticity in terms of coefficients(type=orthotropic):
First line:
D
1111
, D
1122
, D
2222
, D
1133
, D
2233
, D
3333
, D
1212
, D
1313
Second line:
D
2323
, temperature
Repeat this set of data lines as often as necessary to define elasticity as a function of temperature.
Data lines to define anistropic elasticity(type=anisotropic):
First line:
D
1111
, D
1122
, D
2222
, D
1133
, D
2233
, D
3333
, D
1112
, D
2212

Section 2: Material Properties Database Version 2010
U2-24 March 19, 2010 Coventor, Inc.
Second line:
D
3312
, D
1212
, D
1113
, D
2213
, D
3313
, D
1213
, D
1313
, D
1123
Third line:
D
2223
, D
3323
, D
1223
, D
1323
, D
2323
, temperature
Repeat this set of data lines as often as necessary to define elasticity as a function of temperature.
*electrical conductivity
This keyword block defines the electrical conductivity coefficients.
Options
type
Set type=iso (default), type=ortho, or type=aniso to define isotropic, orthotropic, or anisotropic electrical
conductivities, respectively.
Data lines to define isotropic electrical conductivity(type=iso):
First line:
, temperature
Repeat this data line as often as necessary to define the electrical conductivity as a function of temperature.
Data lines to define orthotropic electrical conductivity(type=ortho):
First line:

11
,
22
,
33
, temperature
Repeat this data line as often as necessary to define the electrical conductivity as a function of temperature.
Data lines to define anistropic electrical conductivity(type=aniso):
First line:

11
,
12
,
13
,
22
,
23
,
33
, temperature
Repeat this data line as often as necessary to define the electrical conductivity as a function of temperature.
*expansion
This keyword block defines the thermal expansion coefficients for the material.
Options
type
Set type=iso (default), type=ortho, or type=aniso to define isotropic, orthotropic, or anisotropic thermal
expansion, respectively.
Data lines to define isotropic thermal expansion(type=iso):
First line:
, temperature
Repeat this data line as often as necessary to define the thermal expansion as a function of temperature.
Data lines to define orthotropic thermal expansion(type=ortho):
First line:
Section 2: Material Properties Database Version 2010
Coventor, Inc. March 19, 2010 U2-25
M

1
,
2
,
3
, temperature
Repeat this data line as often as necessary to define the thermal expansion as a function of temperature.
Data lines to define anistropic thermal expansion(type=aniso):
First line:

11
,
22
,
33
,
12
,
13
,
23
, temperature
Repeat this data line as often as necessary to define the thermal expansion as a function of temperature.
*joule heat fraction
This keyword block defines the fraction of electrical energy converted to heat. There are no options associated with
this keyword block.
First (and only) line:
Value of fraction of electrical energy converted into heat
The default value is 1.0.
*piezoelectric
This keyword block defines the piezoelectric coefficients for the material. If this keyword block is included in the
custom properties file for a material, the *dielectric keyword block (see page U2-22), must also be included.
Options
type
Set type=s (default), to specify stress material coefficients for the piezoelectric property. Set type=e to specify
strain material coefficients for the piezoelectric property.
Data lines to the piezoelectric stress coefficient matrix (type=s):
First line:
e
1,11
, e
1,22
, e
1,33
, e
1,12
, e
1,13
, e
1,23
, e
2,11
, e
2,22
Second line:
e
2,33
, e
2,12
, e
2,13
, e
2,23
, e
3,11
, e
3,22
, e
3,33
, e
3,12
Third line:
e
3,13
, e
3,23
, temperature
Repeat this set of data lines as often as necessary to define piezoelectric properties as a function of temperature.
Data lines to the piezoelectric strain coefficient matrix (type=e):
First line:
d
1,11
, d
1,22
, d
1,33
, d
1,12
, d
1,13
, d
1,23
, d
2,11
, d
2,22
Second line:
d
2,33
, d
2,12
, d
2,13
, d
2,23
, d
3,11
, d
3,22
, d
3,33
, d
3,12
Third line:
d
3,13
, d
3,23
, temperature
For the shear components, these coefficients relate the engineering components, not the tensor shear strain compo-
Section 2: Material Properties Database Version 2010
U2-26 March 19, 2010 Coventor, Inc.
nents, to the electric field vector.
*piezoresistive
This keyword block defines the piezoresistive coefficients for the material.
Options
type
Set type=cubic (default), type=ortho, or type=aniso to define isotropic, orthotropic, or anisotropic piezo-
resistive coefficients, respectively.
orientation
Set orientation=wafer_100, wafer_110_right, wafer_110_left, or wafer_111 to specify that the
input properties should be rotated to match the appropriate wafer orientation. The input properties are defined in the
material reference frame.
Data lines to the piezoreistive coefficient matrix (type=cubic):
First Line:

11
,
12
,
44,
temperature
Repeat this data line as often as necessary to define the specific heat as a function of temperature.
Data lines to the piezoreistive coefficient matrix (type=ortho):
First Line:

11
,
12
,
22,

13,

23,

33,

44,

55,
Second Line:

66,
temperature
Repeat these data lines as often as necessary to define the specific heat as a function of temperature.
Data lines to the piezoreistive coefficient matrix (type=aniso):
First Line:

11
,
12
,
13,

14,

15,

16,

21,

22
Second Line:

23
,
24
,
25,

26,

31,

32,

33,

34
Third Line:

35
,
36
,
41,

42,

43,

44,

45,

46
Fourth Line:

51
,
52
,
53,

54,

55,

56,

61,

62
Fifth Line:

63
,
64
,
65,

66
, temperature
Repeat these data lines as often as necessary to define the specific heat as a function of temperature.
*specific heat
This keyword block defines the specific heat for the material. There are no options associated with this keyword
block.
Section 2: Material Properties Database Version 2010
U2-27 March 19, 2010 Coventor, Inc.
Data lines to specify a materials specific heat:
First line:
Value of specific heat per unit mass, temperature
Repeat this data line as often as necessary to define the specific heat as a function of temperature.
Section 2: Material Properties Database Version 2010
U2-28 March 19, 2010 Coventor, Inc.
Notes
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-1
M



Section 3: The Process Editor
The Process Editor allows users to create a flow simulating the foundry process that will fabricate the MEMS or
microfluidics design. Materials, layer names, mask names, actions (deposit or etch), thickness or etch depth, photore-
sist and more are defined in a series of steps. The choice of materials selected in the process flow is dependent on the
MPD, which stores all the materials and their associated properties needed to fully characterize the process flow.
To access the Process Editor, click on the icon to the right of the Process field in the Function Manager. If a Process
Editor file is selected in the Process field, it is displayed. Otherwise, an initial default window opens with a default
layer, but no other process steps defined.
Figure D3-1 Process Editor Components
3.1: Components
The Process Editor has three components: the Process Library, the Process Description, and the Step Parameters.
3.1.1: Process Library
When the user opens the Process Editor by selecting the create new process option, the only active window is the Pro-
cess Library. This window is common to all process files, and uses a tree view to show the CoventorWare process
steps, foundry process steps, and any user-defined process steps.
The Process Library has these folders:
The Process Editor is very tolerant; that is, it will not object to data that is unrealistic or that violates foundry
specifications.
Process
Step
Process Library
description
parameters
Section 3: The Process Editor Version 2010
U3-2 March 19, 2010 Coventor, Inc.
Modeling Actions: This folder contains generic solid modeling actions, including Conformal Shell, Delete,
Partition, Planar Fill, Round Corners, Stack Material, and Straight Cut.
User-Defined Steps: This folder contains predefined process steps, as well as user-defined process steps. Its
contents is determined by the process file designated as the default Process Library from the Tools > Options
dialog (see page U3-40).
Foundry Processes: This folder contains several sequence steps that are recognized foundry processes,
including Polysilicon from IMEPKU, Infineon Technologies SensoNor, MetalMUMPS, PolyMUMPS,
INTEGRAMplus DRIE based SOI (DPK), INTEGRAMplus Metal Nitride (MPK,) INTEGRAMplus Polysil-
icon (PPK), SoiMUMPS, and Tronics SOI-HARM. See page U3-37 for more details.
The contents of the Process Library is determined by the file selected from the Tools > Options > Default Process
Library field (see page U3-40). The steps are sorted alphabetically.
Steps from the library can be added to the Process Description window by double clicking on the step or by right-
clicking and selecting one of these options: Insert Above Current Step, Insert Below Current Step, or Insert After Last
Step. If the user double clicks on a step, it is added after the last step.
To edit a step, the user has to load the step in the Process Description window, and then click on the step from there,
so that the Step Parameters window becomes active and editable.
3.1.2: Process Description
The Process Description window provides a spreadsheet-style view of the process steps in the current process file,
including step number, step name, layer name, action, material, layer thickness, and more. Each process step is dis-
played in its own row. The user can configure the columns displayed by selecting View > Columns.
A process step may be a sequence step, meaning that it is comprised of several substeps. Step 4 in Figure D3-2 is a
sequence step. Sequence steps can be expanded by clicking on the "+" sign to show the steps contained within.
Figure D3-2 Process with a Sequence
Step parameters cannot be edited from the Process Description window. Parameters are edited from the Step Parame-
ters window, which becomes active when the user clicks on a non-sequence step.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-3
M



3.1.3: Step Parameters
The Step Parameters pane allows the user to edit the parameters of a selected step. Parameters cannot be edited in the
Process Description pane. When the user highlights a step in the Process Description pane, the Step Parameters pane
displays that steps parameters. The parameters displayed depend on whether a substrate, deposit, etch, or delete step
has been selected. See the sections immediately following this one for details.
If a sequence is selected, only its name will appear as an editable field.
3.2: Substrate Step
A Substrate step is used to define the parameters of the wafer. By default the Substrate step is the first step in a pro-
cess, and it is inserted whenever a new process is created. In CoventorWare 2010, there can only be one substrate.
To edit the Substrate parameters, select its step in the Process Description pane, and use the fields in the Step Param-
eters pane. If a Substrate step is selected, the Step Parameters fields appear as shown below:
Step Name
This field allows the user to assign a unique name to each step.
Layer Name
The name entered in this field determines the layer name that appears in the Preprocessor solid model.
Mask
Clicking on this field opens a drop-down menu with any available mask names from an active layout file. The
user can also enter a name in this field. Mask names are case-sensitive and must be unique.
Bounding Box
This field can be used to define the dimensions of the substrate (in microns) if there is no mask to define it. The
user enters two sets of XY coordinates to define boundaries of the substrate.
Thickness
These settings allow the user to specify the deposit thickness in microns. The thickness is determined by the Dis-
tribution and Nominal Value settings explained below. For Planar deposits, the thickness value determines the
layer thickness in reference to the highest point in the Z-direction; this value may be positive, negative, or zero.
For Stacked and Conformal deposits, the thickness must be positive.
Whether defined with a mask or with a bounding box, the substrate must be rectangular.
Section 3: The Process Editor Version 2010
U3-4 March 19, 2010 Coventor, Inc.
Distribution: This setting allows the user to enter probability distribution data. The available options are
Scalar (default), Normal, Uniform, and Piecewise linear. The setup windows are shown below.
Nominal Value: This value must be a floating number. This is the value that the Preprocessor uses when con-
structing the solid model. If the Normal, Uniform, or Piecewise linear Distribution option is selected, the
Edit button becomes active. Clicking on this button opens a dialog that is specific to the selected Distribution
option. The values set in the Edit dialog will be used in conjuction with the Nominal Value to create a thick-
ness profile that is used by Architect. These dialogs are explained in the Statistical Properties section on
page U3-21.
Material
Clicking on this field opens a drop-down menu of available materials from the MPD.
Display Color
Colors are used consistently through the process. Deposit colors will appear in the Preprocessor and postproces-
sor with the associated parts. Ten default colors are listed in the drop-down menu, but there is a More Colors
option that, when selected, opens a color selection dialog.
Comments
This field allows the user to add information pertaining to the step.
3.3: Modeling Steps
The Modeling Steps are generic process actions that users can customize to fit the needs of their specific process.
There are seven Modeling Steps: Conformal Shell, Delete, Partition, Planar Fill, Round Corners, Stacked, and
Straight Cut. The Conformal Shell, Planar Fill, and Stacked are deposit actions; Partition and Round Corners are
utility steps; Straight Cut is an etch action, and Delete is a release or sacrificial action. Each of these actions are
explained in detail below.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-5
M



3.3.1: Deposit Parameters
There are three types of deposits: Conformal Shell, Planar Fill, and Stack. The user can select one of these types of
deposits from the Modeling Steps folder or can select a Process Step that uses one of these deposits. The Step Param-
eter fields will vary according to which type of deposit is selected. The Planar Fill and Stack deposits have the same
parameter fields. The Conformal Shell deposit has some unique parameters.
Planar Fill and Stack
Figure D3-3 shows the Step Parameters pane as it appears when a Planar Fill or Stack modeling action is selected.
These modeling actions have the same parameters even though they create different geometries.
Figure D3-3 Planar Fill and Stack Parameters
Step Name
This field allows the user to assign a unique name to each step.
Layer Name
The name entered in this field determines the layer name that appears in the Preprocessor solid model.
Material
Clicking on this field opens a drop-down menu of available materials from the MPD.
Front Side/Back Side
These settings determine if the deposit is performed on the front or back side of the wafer. One or both options
can be selected.
Thickness
These settings allow the user to specify the deposit thickness in microns. The thickness is determined by the Dis-
tribution and Nominal Value settings explained below. For Planar deposits, the thickness value determines the
layer thickness in reference to the highest point in the Z-direction; this value may be positive, negative, or zero.
For Stacked deposits, the thickness must be positive.
Section 3: The Process Editor Version 2010
U3-6 March 19, 2010 Coventor, Inc.
Distribution: This setting allows the user to enter probability distribution data. The available options are
Scalar (default), Normal, Uniform, and Piecewise linear. The setup windows are shown below.
Nominal Value: This value must be a floating number. This is the value that the Preprocessor uses when con-
structing the solid model. If the Normal, Uniform, or Piecewise linear Distribution option is selected, the
Edit button becomes active. Clicking on this button opens a dialog that is specific to the selected Distribution
option. The values set in the Edit dialog will be used in conjuction with the Nominal Value to create a thick-
ness profile that is used by Architect. These dialogs are explained in the Statistical Properties section on
page U3-21.
For more information on planar, stacked, and conformal deposits, see page U3-42.
Display Color
Colors are used consistently through the process. Deposit colors will appear in the Preprocessor and postproces-
sor with the associated parts. Ten default colors are listed in the drop-down menu, but there is a More Colors
option that, when selected, opens a color selection dialog.
Comments
This field allows the user to add information pertaining to the step.
Conformal Shell
The Conformal Shell modeling action has the same fields as the Planar Fill and Stack deposits, but it has additional
options to define underside coating, rounded corners, and surface conformality.
Figure D3-4 Conformal Shell Deposit Parameters
Step Name
This field allows the user to assign a unique name to each step.
Layer Name
The name entered in this field determines the layer name that appears in the Preprocessor solid model.
Material
Clicking on this field opens a drop-down menu of available materials from the MPD.
Front Side/Back Side
These settings determine if the deposit is performed on the front or back side of the wafer. One or both options
can be selected.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-7
M



Underside Coating
This option deposits material on all exposed surfaces, even those on the underside of the device. Figure D3-5 and
Figure D3-6 illustrate the effect of this setting. The device shown has a hole etched completely through the wafer.
In Figure D3-5, the Underside Coating option was activated; as a result, material is deposited on the top and bot-
tom of the wafer, as well as the sides of the hole. In Figure D3-6, this option was turned off; as a result, material
is only deposited on the top and on the sides of hole in the middle of the wafer.
Figure D3-5 Effect of Underside Coating
Figure D3-6 Underside Coating Turned Off
Round Corners
This option rounds the sharp corners of a deposit. Corner and edge definitions are illustrated in Figure D3-7. The
drop-down menu choices for Round Corners are
All: This option rounds all convex and concave corners.
Only Concave Corners: This option rounds only the concave corners.
Only Convex Corners: This option rounds only the convex corners.
Only Convex x-y Corners: This option rounds only the convex corners in the horizontal (x-y) plane.
Only x-y Corners: This option only rounds the horizontal corners (the corners in the x-y plane).
Section 3: The Process Editor Version 2010
U3-8 March 19, 2010 Coventor, Inc.
Figure D3-7 Corner and Edge Definitions
The following figures demonstrate the effect rounding corners have on a model. Figure D3-8 shows a model in which
a material was deposited conformally without rounding the corners.
Figure D3-8 Model with No Corners Rounded
The model shown in Figure D3-9 was generated with the Round Corners option set to All.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-9
M



Figure D3-9 Model with All Corners Rounded
In Figure D3-10 the model on the left was generated with the Round Corners option set to Only Concave Corners.
The model on the right was generated with the Round Corners option set to Only Convex Corners. Not the difference
around the edges of the circular and square objects.
Figure D3-10 Rounding Concave vs Convex Corners
In Figure D3-11, the model on the left was generated with the Round Corners option set to Only Convex x-y Corners.
The model on the right was generated with the Round Corners option set to Only x-y corners. Note that in both mod-
els, the vertical corners of the square object are left untouched.
Figure D3-11 Rounding Corners in X-Y Plane
For models that fail to build with all the specified corners rounded, Coventor provides an environment variable that
can be set to use other rounding algorithms. See page U3-11 for more details.
Only Convex Corners Only Concave Corners
Convex x-y plane only x-y plane only
Section 3: The Process Editor Version 2010
U3-10 March 19, 2010 Coventor, Inc.
Convex/Concave Corners Radius
This option allows the user to set the radius of the rounding corner operation. If the corner is convex, the Convex
Corner Radius setting determines how much material is removed as the corner is rounded. The larger the setting,
the more material is removed. If the corner is concave, the Concave Corner Radius setting determines how much
material is added as the corner is rounded. The larger the setting, the more material is deposited. Figure D3-12
illustrates how the radius settings work:
Figure D3-12 Effect of Radius Settings on Convex and Concave Corners
The thicker black line represents the conformal deposit layer without rounding. Rounding a corner is like rolling
a ball that is tangent with the two faces of the corner. So the radius is a perpendicular line from the tangent point
respectively. The intersection point is the center of the rolling ball and the starting point for measuring the radius.
Figure D3-13 Radius Definition
The default setting for both Radius values is the Thickness Nominal Value (see below). The Radius values must
be greater than zero.
Thickness
These settings allow the user to specify the deposit thickness in microns. The thickness is determined by the Dis-
tribution and Nominal Value settings explained below. For Planar deposits, the thickness value determines the
layer thickness in reference to the highest point in the Z-direction; this value may be positive, negative, or zero.
For Conformal deposits, the thickness must be positive.
Distribution: This setting allows the user to enter probability distribution data. The available options are
Scalar (default), Normal, Uniform, and Piecewise linear. The setup windows are shown below.
Nominal Value: This value must be a floating number. This is the value that the Preprocessor uses when con-
structing the solid model. If the Normal, Uniform, or Piecewise linear Distribution option is selected, the
Edit button becomes active. Clicking on this button opens a dialog that is specific to the selected Distribution
option. The values set in the Edit dialog will be used in conjuction with the Nominal Value to create a thick-
ness profile that is used by Architect. These dialogs are explained in the Statistical Properties section on
page U3-21.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-11
M



Display Color
Colors are used consistently through the process. Deposit colors will appear in the Preprocessor and postproces-
sor with the associated parts. Ten default colors are listed in the drop-down menu, but there is a More Colors
option that, when selected, opens a color selection dialog.
Surface Conformality Factor (SCF)
Sets the relative thickness of the sidewalls of the deposit compared to the thickness of the horizontal part of the
deposit.
Comments
This field allows the user to add information pertaining to the step.
Alternate Algorithms for Rounding Corners
The basic algorithm used in rounding corners first offsets the model with the deposit thickness, and then collects all
the eligible edges and rounds them at one time using the user-specified convex and concave radii. If the model con-
tains small features, especially very shallow steps, then the solid modeler may fail where the vertical edge is shorter
than the rounding radius. If the solid modeler fails on rounding any edge, the remaining edges are not rounded.
If the solid modeler fails to round eligible corners in a model, the user can set an environment variable that will use an
alternate algorithm. The environment variable is called AB_ROUNDED_CONFORMAL_ALG, and can have a value
of 1, 2, 3, or 4.
Algorithm 1 is the default algorithm; it is the same algorithm used when the environment variable is not set. This
method is the most flexible. The convex and concave edges can be rounded with different radii, and the user can
choose the round all edges or only the horizontal edges. This algorithm works well on models with curved edges. But
as noted above, it may fail on models with small features.
With Algorithm 2, the eligible edges are rounded one at a time. Unlike Algorithm 1, which will stop rounding edges
if one edge cannot be rounded, Algorithm 2 skips edges that cannot be rounded and continues to round the other eli-
gible edges. It handles models with shallow step geometries very well. However, it cannot round vertical edges and is
not suitable for models with curved edges. Figure D3-14 shows a model created with Algorithm 2.
Figure D3-14 Model Created with Algorithm 2
To model snowfall deposits, set the SCF to 0.
For information on how to set an environment variable, see page U1-47.
Original Rounded Model
Section 3: The Process Editor Version 2010
U3-12 March 19, 2010 Coventor, Inc.
Like Algorithm 2, Algorithm 3 rounds corner incrementally, but instead of rounding edges one at a time, it rounds all
the edges on one face at a time. This algorithm handles models with small features and curved edges, as shown in
Figure D3-15. The curved edges have to be rounded with their adjacent edges; otherwise, undesired geometry will be
created. Vertical edges are not rounded.
Figure D3-15 Model Created with Algorithm 3
Note that if the user sets the environment variable to Algorithm 2 and the model has curved edges, the solid model
will automatically invoke Algorithm 3.
Algorithm 4 rounds the model using a tiny radius before offsetting the model with the deposit thickness. After the off-
set, the convex edges are rounded naturally. Therefore, the rounding radius is always equal to the deposit thickness.
The convex radius value set in the Process Editor step is not used. Concave edges are still rounded according to the
specified concave radius. This algorithm is intended to be generic enough to be used on most models with small fea-
tures, but users should exercise caution because after the offset operation, it might create a model with self-intersec-
tions.
Figure D3-16 Model Created with Algorithm 4
The algorithms available with the AB_ROUNDED_CONFORMAL_ALG variable are summarized below:
Model Geometry Algorithm to Use
Most models, no small features 1 (default)
Models with small features, no curved edges 2
Models with small features and curved edges 3
Most models with small features, but result may contain
self-intersections. Use with caution.
4
Original
Rounded Model
Original Rounded Model
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-13
M



3.3.2: Partition
The Partition step can be used to automate model partitioning (e.g. separate tether from proof mass to allow more
efficient meshing) that was previously done manually in the Preprocessor. This step can save users a lot of time, espe-
cially when they repeatedly modify a layout, build a 3-D model and perform some analyses. Note that unlike the
Straight Cut step, the Partition step does not remove material; it uses the specified mask to split the selected layer into
two separate layers. If multiple layers are selected, each layer will be split into two layers.
Step Name
This field allows the user to assign a unique name to each step.
Layers
Allows the user to select the layers that will be partitioned. Clicking on Edit opens a dialog that lists all the lay-
ers that were used in the preceding steps. Layers added to the right pane of the dialog will be partitioned.
Mask
Allow the user to specify the mask to be used for partitioning. The drop-down menu includes masks used in the
preceding steps. The user can also enter the name of a mask.
Sidewall Angles (degrees)
This setting allows the user to partition the specified layers at an angle. The actual slope of the partition is deter-
mined by the Draft angle and the antisymmetric increments set for the X and Y faces. This settings are explained
in detail on page U3-20. Note that the Draft angle for this step is equivalent to a Scalar sidewall angle distribu-
tion.
Example
The example below shows how to use the Partition step to separate the proof mass of a gyroscope from the tethers
and the comb fingers. The proof mass of this gyro consists of a square plate perforated with many release holes, and
it has comb fingers along two sides. This combination causes difficulties because the comb finger placement relative
to the hole placement causes high aspect ratio elements for any but an extremely fine (large number of small ele-
ments) mesh. And because most of the deflection occurs in the tethers, a finer mesh is needed to accurately capture
that deflection. By partitioning the model, we can apply a finer mesh to the comb fingers and the tethers.
Note that when partitioned layers are added to the Mesh Model folder, touching layers are merged into one region.
If you want to have the partitioned layers in different regions so that you can apply different meshing algorithms,
make sure to uncheck the Automatically merge touching layers under the Mesh menu. For more information, see
page D4-45.
Section 3: The Process Editor Version 2010
U3-14 March 19, 2010 Coventor, Inc.
Figure D3-17 Partition Example
Poly layer is partitioned
into two layers:one for
proof mass and one for
comb fingers and tethers
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-15
M



3.3.3: Round Corners
The Round Corners modeling action can be used to round the convex corners of exposed surfaces in the model. A
material or layer surface is considered exposed if it does not come in contact with another material or layer.
Figure D3-18 illustrates the criteria for rounding corners. For this illustration the round corner operation will be spec-
ified for material A only. Corners 2 and 4 are convex corners not in contact with any other material, so they are eligi-
ble for rounding. When considering only material A, corners 1, 5, and 6 are convex corners, but they are in contact
with other materials (material B and the substrate) and form concave corners with those materials. Corner 3 is a con-
cave corner, so it would not be rounded.
Figure D3-18 Criteria for Rounding Corners
Round Convex Corners
The drop-down menu for this field has two options: All, which rounds all the convex corners in the model, and
Only x-y corners, which rounds only those convex corners in the x-y plane. Figure D3-19 shows the same model
created without rounding the corners, created with rounding all corners, and created with rounding only the x-y
corners.
Section 3: The Process Editor Version 2010
U3-16 March 19, 2010 Coventor, Inc.
Figure D3-19 Rounded Corners Example
Radius
The Radius option allows the user to determine how far the rounding corner operation will go into the layer or
material to create the rounded corner. The value must be greater than zero, and there is no default value. The
larger the radius, the more material is removed. See Figure D3-12 on page U3-10 for more explanation of this
setting.
Layer(s)/Material(s)
The user can also choose to round corners by selecting layers or materials. To select materials or layers, the user
selects either the Layer(s) option or the Material(s) option. To select only one layer or material, the user can use
the options drop-down menu. To select more than one layer or material, the user must click on Edit to access the
Selection dialog. Note that only the layers or materials added to the right pane of the dialog will be acted on by
the rounded corners operation. Even if a layer or material is selected, if it is not exposed, its corners will not be
rounded.
The Round Corners option can be used to create a sphere. See page D5-1 for more details.
No corners rounded
All corners rounded Only x-y corners rounded
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-17
M




3.3.4: Straight Cut Etch Parameters
Figure D3-20 shows the parameters displayed when Straight Cut modeling step is selected. The Straight Cut step has
several parameters that determine how a layer will be etched. The user has the option to etch by layer, by depth, or by
material. After specifying one of these options, the etch is then assigned a mask, a photoresist, and other specifica-
tions. The settings are detailed below.
Figure D3-20 Straight Cut Step Parameters
Step Name
This field allows the user to assign a unique name to each step.
Cut Last Layer Completely
This option etches through the last layer completely and uniformly.
By Depth
This option etches the material(s) by a particular depth. Note that if the material to be etched was a planar or
stacked deposit, it will be etched uniformly. But if the material was a conformal deposit, the etch will not remove
the material uniformly from all surfaces of the deposit. The Global and Local Topology settings, explained
below, determine how the layer is etched.
Layers or Materials added to the right pane will be acted on
Section 3: The Process Editor Version 2010
U3-18 March 19, 2010 Coventor, Inc.
Distribution: This setting allows the user to enter probability distribution data. The available options are
Scalar (default), Normal, Uniform, and Piecewise linear. The setup windows are shown below.
Nominal Value: This value must be a positive floating number. This is the value that the Preprocessor uses
when constructing the solid model. If the Normal, Uniform, or Piecewise linear Distribution option is
selected, the Edit button becomes active. Clicking on this button opens a dialog that is specific to the selected
Distribution option. The values set in the Edit dialog will be used in conjuction with the Nominal Value to
create an etch profile that is used by Architect. These dialogs are explained in the Statistical Properties sec-
tion on page U3-21.
Etch Shape Based on:
Global Topology: The etch starts from the top-most point and etches the distance specified by the user.
Surfaces that are below the distance specified will not be etched.
Local Topology: The etch removes the material in the Z direction from the exposed surfaces regardless
of the surface height.
Figure D3-21 shows how the Global and Local Topology settings affect an etch by depth step on a conformal
deposit. If set to Global, the etching algorithm starts from the top-most point of the deposit, etches down by the
depth specified, and then stops. The Global topology etch volume is a rectangle, as shown by the blue box in the
Figure D3-21A. The result of the etch is shown in Figure D3-21C. If set to Local, the etching algorithm removes
material in the Z direction from the exposed surface regardless of the surface height. As Figure D3-21B shows,
the volume to be etched is not a rectangle. It is comprised of the shape of the exposed surface. The result of the
Local topology etch is shown in Figure D3-21D.
Figure D3-21 Global vs. Local Topology
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-19
M



Filter Materials: Allows the user to include or exclude materials from the Etch by Depth operation.
The Filter Materials pane will list all materials included in the process prior to that etch step. The user
can select the Include or Exclude option, and then use the Add button to move the materials to include
or exclude to the right pane. By default, Exclude is selected and the right pane is empty, which means
that all materials will be included in the Etch By Depth operation.
By Layer(s)
This option allows the user to etch by specifying a layer or layers. After this option is selected, clicking on Edit
opens a dialog that allows the user to select the layers to be etched. The dialog will only show those layers that
have been added to the process prior to this etch step. Only those layers moved to the pane to the right of the Add
and Remove buttons will be etched.
By Material(s)
This option allows the user to specify an etch by material(s). After this option is selected, clicking on Edit opens
a dialog that allows the user to select the materials to be etched. The dialog lists only materials previously speci-
fied in the current process. The user can select the Include or Exclude option, and then use the Add button to
move the materials to include or exclude to the right pane. By default, Include is selected and the right pane is
empty, which means that all materials will be included in the Etch By Depth operation. Note that if the material
is selected to be etched and appears in more than one step, all the steps that use that material will be etched.
Front Side/Back Side
These settings determine if the etch is performed on the front or back side of the wafer. One or both options can
be selected.
When the model has a perforated substrate, deposit material will go to the opposite side of the wafer. But the
criterion for removing material with a subsequent etch is based on the Front Side/Back Side setting for the deposit.
For example, if material was deposited on the front side of the wafer, and because of perforations, ended up on the
back side of the wafer, a subsequent etch of that deposit from the front side would etch the material from the front
and back because that material is considered a a front side deposit. But if a back side etch was selected, none of the
material would be removed because that material is considered a front side deposit and only materials deposited on
the back side would be etched.
Section 3: The Process Editor Version 2010
U3-20 March 19, 2010 Coventor, Inc.
Mask
Clicking on this field opens a drop-down menu with any available mask names from an active layout file. The
user can also enter a name in this field. Mask names are case-sensitive and must be unique.
Photoresist
Determines if a shape defined by a mask is retained (+) or etched away (-).
Sidewall Angle
Distribution: This setting allows the user to enter probability distribution data. The available options are
Scalar (default), Normal, Uniform, and Piecewise linear. Each option has its own dialog, which opens when
the user clicks on Edit.
Nominal Value: This option can be a positive or negative floating number between -90 and 90. This is the
value that the Preprocessor uses when constructing the solid model. If the Normal, Uniform, or Piecewise lin-
ear Distribution option is selected, the Edit button becomes active. Clicking on this button opens a dialog
that is specific to the selected Distribution option. The values set in the Edit dialog will be used in conjuction
with the Nominal Value to create sidewall angle profile that is used by Architect. These dialogs are explained
in the Statistical Properties section on page U3-21.
Antisymmetric Increments: These settings can be used in conjunction with the Nominal Value to emulate
sidewall angles that are not uniform. For example, when the die is not in the middle of a wafer, and the light
source of the lithography is in the middle of the wafer, then the die sidewall angles would be anti-symmetric.
The tilt angle of each face would be a combination of the scalar angle and the anti-symmetric increments
specified for the X and/or Y faces.
When a Scalar sidewall angle is specified, it is the angle of the sidewall with the Z axis when the direction
vector is straight down. When no antisymmetric increments are specified, this sidewall angle is applied uni-
formly to every face.
In order to be consistent with the convention of specifying dies, we select the Cartesian coordinate system to
define the direction vector.
The direction vector can be decomposed into two angles as shown below. The increment angle of X/Y is the
sidewall angle measured on faces facing X or Y in the center of the die, without draft angle applied. So, when
the draft angle is zero, the etch is the parallel sidewall angle etch.
From the mathematical perspective, the direction vector is the vector from the light source to the die center.
The X/Y increment angle is the projection angle of this vector on XZ plane and YZ plane respectively.
The Anti-Symmetric Increment values have to be between -90 and 90. The sum of the absolute value of the
scalar sidewall angle and the absolute value of the X/Y increment angle should be less than 90.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-21
M



Offset
Used to increase or decrease the area of the mask material in the positive or negative XY plane.
Distribution: This setting allows the user to enter probability distribution data. The available options are
Scalar (default), Normal, Uniform, and Piecewise linear. Each option has its own dialog, which opens when
the user clicks on Edit. These dialogs are explained in the Statistical Properties section on page U3-21 .
Nominal Value: This value can be a positive or negative floating number. This is the value that the Prepro-
cessor uses when constructing the solid model. If the Normal, Uniform, or Piecewise linear Distribution
option is selected, the Edit button becomes active. Clicking on this button opens a dialog that is specific to
the selected Distribution option. The values set in the Edit dialog will be used in conjuction with the Nominal
Value to create an offset profile that can be used by Architect. These dialogs are explained in the Statistical
Properties section on page U3-21.
Comments
This field allows the user to add information pertaining to the step.
3.3.5: Statistical Properties
For the thickness or etch profiles in Architect, the user has the option to enter probability distribution data. This statis-
tical data allows the user to vary model parameters according to probability function options. The options are Normal,
Uniform, or Piecewise Linear. The user selects an option from the Distribution drop-down menu, and then clicks on
Edit beside the Nominal Value field.
Normal
The Normal probability function is used to describe a continuously random variable. The Normal distribution has the
bell-shaped curve, shown in Figure D3-22:
Figure D3-22 Normal Distribution
The Nominal Value, set in the Step Properties pane, is the midpoint on the X-axis of the distribution curve. When the
user clicks on Edit beside the Nominal field, the dialog below appears if the Normal option had been selected:
To apply offsets specified in the Process Editor to a solid model, make sure to check Apply Offset Values on the
Designer tab.
Note that these settings are only used by Architect. They will not affect how the solid model is built.
nominal value upper limit lower limit
Section 3: The Process Editor Version 2010
U3-22 March 19, 2010 Coventor, Inc.
.
Tolerance
This setting must be set to a value greater than -1 and less than 1, such that the limits of the distribution are
nominal value + tolerance*nominal value and nominal value - tolerance*nominal value. This value specifies the
3 limit.
Note that if the tolerance is set, the Upper and Lower Limit fields cannot be set.
Upper Limit
This function sets the +3 value of the distribution, where is the standard deviation of the normal distribution.
Note that if this option is selected, the tolerance cannot be set.
Lower Limit
This function sets the -3 value of the distribution, where is the standard deviation of the normal distribution.
This setting only becomes active when the Upper Limit setting has been selected.
Uniform
The uniform probability distribution assumes that all values between a lower and upper limit are equally likely. The
uniform probability curve has the shape shown below:
Figure D3-23 Uniform Distribution
The Nominal Value, set in the Step Properties pane, is the midpoint on the X-axis of the distribution curve. When the
user clicks on Edit beside the Nominal field, the dialog below appears if the Uniform option is selected:
nominal value upper limit lower limit
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-23
M



Tolerance
This setting must be set to a value greater than -1 and less than 1, such that the limits of the distribution are
nominal value + tolerance*nominal value and nominal value - tolerance*nominal value. Note that if the toler-
ance is set, the Upper and Lower Limit fields cannot be set.
Upper Limit
This function sets the largest value on the distribution curve. If this option is selected, the tolerance cannot be set.
Lower Limit
This function sets the smallest value of on the distribution curve. This setting only becomes active when the
Upper Limit setting has been selected.
Piecewise Linear
The Piecewise Linear curve has no set shape; the user defines a shape by entering coordinate points in the Edit dialog.
When the user clicks on Edit beside the Nominal field, the dialog below appears if the Piecewise Linear option is
selected:
Probability Density Function
This option defines a continuous function of an independent variable such that for real numbers a and b, the
probability that a random value of that variable will be between a and b is the area under the PDF curve between
a and b. For a defined curve, the X axis is the variable value, and the Y axis is the probability density. The Nom-
inal Value, set in the Step Properties pane, corresponds to the peak of the defined curve.
Cumulative Density Function
This option defines a function of x, where x ranges from -infinity to infinity. The CDF at any point x is the prob-
ability that a sample from the distribution has a value less than x. At x equals infinity, the value of the CDF func-
tion must equal 1 because the probability that a same form any distribution will be less than infinity is 1.
Correspondingly, the CDF function must equal 0 at x equals -infinity because the probability that a sample from
any distribution will be less than -infinity is 0. The Nominal Value, set in the Step Properties pane, is the midpoint
The Normal and Uniform distributions are predefined probability density functions.
Section 3: The Process Editor Version 2010
U3-24 March 19, 2010 Coventor, Inc.
on the X-axis of the distribution curve. The figure below shows a CDF distribution:
Figure D3-24 CDF Distribution
Tolerance
This setting can be undefined or should be a numerical value between -1 and 1. If it is defined, the Upper and
Lower Limit fields are left blank because they are automatically defined as nominal value + tolerance*nominal
value and nominal value - tolerance*nominal value.
Upper Limit
This setting should be set to a value greater than the nominal value. Note that if this field is set, the Tolerance
field should be left blank.
Lower Limit
This setting should be set to a value less than the nominal value. If this field is set, the Tolerance field should be
left blank.
Points
For Probability Density Function:
There must be at least two (x, y) pairs of points. The minimum, default number of points is two.
Each x value must be greater than or equal to the previous x value.
The y values must be 0.
The first x value (x1) must be < 0, and the last (xn) must be > 0.
For Cumulative Density Function:
There must be at least two (x, y) pairs of points. The minimum, default number of points is two.
Each x value must be greater than or equal to the previous x. The same restriction applies for the y values.
The y values must be 0.
The first x value (x1) must be < 0, and the last (xn) must be > 0.
The first y value must equal 0, and the last y must be > 0.
nominal value upper limit lower limit
1
(-infinity) (infinity)
0.5
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-25
M



3.3.6: Delete Parameters
This modeling step allows the user to delete material by specifying that material or by specifying a layer.
Note that multiple delete steps are allowed in CoventorWare 2010.
Step Name
This field allows the user to assign a unique name to the step.
Material
If this option is selected, the user specifies the material to be deleted. The drop-down menu for this field includes
only materials specified for the current process. Note that if the material appears in more than one step, all the
steps that use that material will be deleted.
Layer
If this option is selected, the user specifies a layer for which the material will be deleted. The drop-down menu
for this field includes only layers specified for the current process.
Comments
This field allows the user to add information pertaining to the step.
3.4: User-Defined Step Definitions
This section details the process steps that appear with the default process library installed with CoventorWare. This
default library is determined by the Tools > Options > Process Library setting (see page U3-40).
This default process library is a library of solid modeling steps. Each step or sequence of steps maps to a MEMS pro-
cess. The purpose of this library is to show the user how to map a process onto a 3-D solid model. This process library
is not designed to emulate exactly the geometries of a real MEMS process. To attain such level of detail, it is best to
use MEMulator, distributed by Coventor, Inc., which builds a virtual prototype based on 3-D voxels. A solid model
can then be exported from MEMulator in SAT or STL format.
The library steps are only suggestions that show how to emulate realistic process steps with solid modeling primi-
tives; they do not match them in detail. Using the default library as starting point, the user can build a customized
library by adding more steps and sequences.
3.4.1: Etch Steps
The order of process steps in the CoventorWare process modeling files does not necessarily represent the exact
order in the physical fabrication process.
Section 3: The Process Editor Version 2010
U3-26 March 19, 2010 Coventor, Inc.
Anisotropic Wet Etch, Frontside, Backside
Anistropic wet etch using KOH or TMAH is a bulk silicon etch whose etch rate is very dependent on the orientation
of the silicon's crystal planes. For example, {111} crystal silicon planes etch significantly slower than {100} planes.
This makes it possible to create specific geometries difficult to produce with other micromachining techniques. The
most characteristic feature of anistropically etched structures on {100} silicon wafers are cavities or V-grooves that
are bounded by {111} planes and intersect under an angle of 54.7 (90-35.3) with the {100} plane of the top sur-
face. This process modeling step does not account for all possible geometries, but emulates the etching result of rect-
angular mask aligned parallel to the <100> direction, which is a cavity bounded by inclined crystal silicon {111}
planes.
The etch can be applied to the frontside or backside of the wafer. The sidewall angle is predefined with -35.3 to rep-
resent a characteristic etch angle for crystal silicon, as illustrated below:
Despite the high anisotropy of KOH wet etching, usually the mask is still undercut by a few percentage of the total
etch depth. This mask undercut can be considered using the Offset parameter. Etch stops can be considered by adding
an additional layer to represent the etch stop layer, and using the Cut Last Layer Completely option to remove the
crystal silicon until the etch stop layer. Alternatively, the Depth option can be used to define a certain etch depth.
The default setting for the photoresist is positive ("+"). For information on photoresist settings, see page U3-50.
Figure D3-25 Sample Setup for Anisotropic Wet Etch - Backside
When using a positive polarity for a layout layer and a dark field mask, the user should draw areas where the photore-
sist will be removed; e.g. defining the etch opening for the cavity to be etched.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-27
M



Figure D3-26 Layout for Anisotropic Etch
Figure D3-27 Result of Anisotropic Wet Etch - Backside
The Anisotropic Wet Etch uses a Straight Cut modeling action. For information on this modeling action and its
parameters, see page U3-17.
Section 3: The Process Editor Version 2010
U3-28 March 19, 2010 Coventor, Inc.
Generic Wet Etch
This step represents a generic wet etch in which the rate of material removal does not depend on the orientation of the
substrate. Provided there is a sufficient supply of reactants, lateral etching occurs at about the same rate as vertical
etching, resulting in an undercut of the mask. This undercut can be modeled using the Offset parameter. Typically, the
sidewall is tapered and curved. Tapering can be adjusted with the Sidewall Angle parameter. Curved sidewalls and
isotropic etching are not supported with the current modeling step.
The default setting for the photoresist is positive ("+"). For information on photoresist settings, see page U3-50.
When etching single-crystal silicon with certain etchants, such as KOH, orientation-depending etching can occur.
Refer to the Anisotropic Wet Etch description above.
The Generic Wet Etch step uses a Straight Cut modeling action. For information on its parameters, see page U3-17.
Generic Dry Etch
This step represents a generic dry etch that removes material using dry etchants such as chemically reactive vapors or
reactive species in plasmas.
The shape of plasma-etched features is usually a strong function of the etching conditions, and the settings of the
plasma parameters are critical to achieve the desired result. The undercut can be modeled using the Offset parameter.
Typically, the sidewall is tapered and curved. Tapering can be adjusted with the Sidewall Angle parameter. Curved
sidewalls and isotropic etching are not supported with the current modeling step.
The Generic Dry Etch step uses a Straight Cut modeling action. For information on its parameters, see page U3-17.
The default setting for the photoresist is positive ("+"). For information on photoresist settings, see page U3-50.
Deep Reactive Ion Etch (DRIE)
Deep reactive ion etching (DRIE) is used to etch deep cavities in substrates with relatively high aspect ratios. Most
systems utilize the so-called "Bosch process," in which a fluoropolymer is used to passivate the etching of the side-
walls. The sidewalls are usually not significantly etched (small Offset value); thus, nearly vertical sidewall features
can be produced (sidewall angle is approximately 0). Typical aspect ratios of 10-20 can be achieved.
At higher magnification, a slight scalloping of the walls corresponding to the alternation between etching and passi-
vation can be observed. The DRIE step uses a Straight Cut modeling action, which does not consider this effect.
For information on Straight Cut and its parameters, see page U3-17.
The default setting for the photoresist is positive ("+"). For information on photoresist settings, see page U3-50.
Release Dry Etch and Release Wet Etch
These etch steps completely remove the sacrificial layer, leaving the freestanding structural material attached to the
underlying fixed layer. The etchant used to release the structure should etch the sacrificial layer quickly and the
remaining layers not at all or very slowly. Dry or wet etchants can be employed for the sacrificial layer etch. The user
can choose either the material or the layer that determines the sacrificial layer. Partial etch, removing part of the layer
material, is not supported.
These release steps use the Delete modeling action. For more information on this action and its parameters, see page
U3-25.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-29
M



Stripping
This etch step is used to completely remove a layer of material. Most often it is used for photoresist removal after pat-
tern transfer to the substrate.
These release steps use the Delete modeling action. For more information on this action and its parameters, see page
U3-25.
3.4.2: Deposition Steps
Thermal Oxidation
To grow a thermal oxide on a silicon wafer, the substrate is placed in a high-temperature furnace in which oxygen or
water vapor is introduced. At elevated temperatures the oxygen will diffuse into the substrate at a high rate, causing
an oxidation of the material. It is possible to speed up the process further by operating at elevated furnace pressures.
In dry oxidation, pure oxygen is used as an oxidant. It is typically used when the highest-quality oxide is needed, such
as for the thin gate oxide of MOS transistors, which are in the order of 10nm. Wet oxidation is employed to make
thicker oxides, ranging from several hundred nm to about 2m.
Typically, the process is performed on both sides of the substrate at atmospheric pressure and is modeled by a confor-
mal shell. The silicon consummation during oxidation and local oxidation effects such as the bird's peak are not con-
sidered in the modeling step.
The Thermal Oxidation step uses the Conformal Shell modeling action. For details on this action and its parameters,
see page U3-5.
Generic PECVD
Plasma enhanced chemical vapor deposition (PECVD) is performed in a reactor at temperatures up to ~400C. The
deposited film is a product of a chemical reaction between the source gases supplied to the reactor. A plasma is gen-
erated in the reactor to increase the energy available for the chemical reaction at a given temperature. The process is
typically performed on one side of the substrate at a time. The two major methods of PECVD are sputtering and evap-
oration.
This step uses a Conformal Shell modeling action. For details on this action and its parameters, see page U3-5.
Sputtering
The substrate is placed in a vacuum chamber with a target of the material to be deposited. A plasma is generated in a
passive source gas (i.e. argon) in the chamber, and the ion bombardment is directed towards the target, causing mate-
rial to sputter off the target and condense on the chamber walls and the substrate. To increase the deposition rate, a
strong magnetic field (magnetron) can be used to concentrate the plasma near the target.
This step uses a Conformal Shell modeling action. For details on this action and its parameters, see page U3-5.
Evaporation
The substrate is placed in a high-vacuum chamber at room temperature with a crucible containing the material to be
deposited. A heating source is used to heat the crucible, causing the material to evaporate and condense on all
exposed cool surfaces of the vacuum chamber and the substrate. The process is typically performed on one side of the
substrate at a time. Typical sources of heating are E-beam, resistive heating, and RF-inductive heating. In some sys-
tems the substrate can be heated during deposition to alter the composition/stress of the deposited material.
This step uses a Conformal Shell modeling action. For details on this action and its parameters, see page U3-5.
Section 3: The Process Editor Version 2010
U3-30 March 19, 2010 Coventor, Inc.
LPCVD
Low-pressure chemical vapor deposition (LPCVD) is performed in a reactor at temperatures up to ~900 C. The
deposited film is a product of a chemical reaction between the source gases supplied to the reactor. The process is typ-
ically performed on both sides of the substrate at the same time.
This step uses a Conformal Shell modeling action. For details on this action and its parameters, see page U3-5.
Spin Casting
The material to be deposited is dissolved in a solvent. The substrate is held by vacuum on a chuck. The solution is
applied to the substrate, which is then rotated at high speed. The rotation spreads the solution evenly over the surface
and causes some of the solvent to evaporate, leaving a thin film of material on the substrate. The substrate is usually
baked immediately after spin casting to remove the remaining solvent in the film. The process is typically performed
on one side of the substrate at a time.
This step uses a Conformal Shell modeling action. For details on this action and its parameters, see page U3-5.
3.4.3: Process Sequences
Silicon-On-Insulator (SOI)
Applying this sequence to the basic default substrate step emulates a silicon-in-insulator substrate. Different methods
exist to produce SOI-substrates. One way is to take a bottom silicon wafer with thermal oxide on it and bond a
thinned top wafer to it. The result is a crystal silicon layer on an insulating oxide.
The thickness of the insulating oxide can be determined in the first step, while the actual thickness of the SOI-layer
will be chosen in the second substep.
Typical values for the insulating oxide are around 1-2m. The SOI-layer thickness of commercial available SOI-sub-
strates is typically between 10m and 100m.
Ion Implantation Surface
Ion implantation is a process in which a beam of dopant atoms is directly shot into the wafer. This provides a certain
dose of dopants in a layer near the silicon surface. High-temperature annealing in a suitable atmosphere is used to
redistribute these dopants; this process is called diffusion. Ion implantation is typically used in MEMS to create con-
ductors and resistors, especially piezoresistors, in the silicon.
The Ion Implantation sequence is composed of two steps: Implantation Step 1 defines the depth of the ion implanta-
tion after diffusion. Implantation Step 2 is used to fill-in the doped material. Thickness needs to remain 0 in order
emulate a plane surface.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-31
M



The default setting for the photoresist is positive ("+"). When using a positive polarity for a layout layer and a dark
field mask, the user should draw areas where the photoresist will be opened to allow implantation of the ions, thus
defining the resistors or conductors. For information on photoresist settings, see page U3-50.
Figure D3-28 Layout for Ion Implant Example and 3-D Result
This process sequence is meant to define the geometric properties of the implanted regions, e.g. depth of piezoresis-
tors. It neither simulates any real process effects, such as doping profile, nor can suggest process settings such as the
exact energy of an implant in order to achieve a desired dopant profile.
Section 3: The Process Editor Version 2010
U3-32 March 19, 2010 Coventor, Inc.
Electroplating
Electroplating is an electrochemical process in which metal ions in a solution are deposited onto the substrate. The
mask layer is patterned using a thick resist to form the stencil for the electroplated metal layer. The metal, often nickel
or gold, is then electroplated into the patterned resist.
The electroplating sequence consists of four substeps:
1. Resist Deposition
2. Resist Patterning
3. Metal Plating
4. Stripping Resist Stencil
Figure D3-29 Sample Setup for Electroplating
The default setting for the photoresist of Step 2 is positive ("+"). When using a positive polarity for a layout layer and
a dark field mask, the user should draw the areas where the photoresist will be opened to allow electroplating in the
openings, thus defining the desired structures. For information on photoresist settings, see page U3-50.
Note that in this CoventorWare process sequence, the thickness of the resist determines the thickness of the electro-
plated metal layer. In Step 3 the resist mold is completely filled with metal - until the highest point of the resist struc-
ture. In reality, the thickness of the resist is usually substantially thicker compared to the one of the metal layer -
unless over-plating is the aim. An alternative method is used in the Lift-Off sequence (see page U3-34). Step 4 can be
disabled to preserve the resist in the 3-D solid model.
Figure D3-30 2-D Layout and 3-D Results for Electroplating
Features of different areas and regions at the corners of features may plate at different rates. This effect is not emu-
lated. The surface roughness, which is usually higher for plated materials compared to evaporated or sputtered ones,
is also not considered. Generally, a thin seed layer, e.g. 10nm Au, is needed as a starting layer to electroplate the main
metal layer. This seed layer is not considered in the Electroplating process sequence.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-33
M



LIGA
LIGA stands for X-ray LIthography, Electroforming (German: Galvanoformung), and molding (German: Abfor-
mung). This technology allows the user to define high aspect ratio structures in nickel. The process consists of expos-
ing a sheet of PMMA (Polymethyl methacrylate), bonded to a wafer using X-ray lithography. The PMMA is then
developed, and the exposed material is removed. Nickel is then electroplated in the open areas of the PMMA. The
nickel overplate is removed by polishing, leaving high aspect ratio nickel parts. The PMMA is removed, and the
nickel parts may remain anchored to the substrate or be released.
The process sequence is similar to electroplating. One additional polishing step is added:
1. PMMA Deposition
2. PMMA Patterning
3. Metal Plating
4. Polishing
5. Stripping PMMA Stencil
Figure D3-31 Sample Setup for LIGA
After the PMMA deposition in Step 1, the main pattern is defined in Step 2. The default setting for the PMMA resist
of Step 2 is positive (+). When using a positive polarity for a layout layer and a dark field mask, the user should draw
the areas where the PMMA will be removed to allow electroplating in the openings, thus defining the desired struc-
tures. Plating will be done in Step 3. In Step 4 the same mask as for the substrate should be employed to polish the
deposited layers. All the PMMA will be stripped in Step 5.
According to this process sequence, the actual thickness of the LIGA structure is defined by the thickness of the
PMMA deposition plus the thickness of the plating minus the depth of the polishing step. For this model, the depth of
the polishing (Step 4) should be at least the amount of the metal thickness defined in Step 3.
Except Step 4, the LIGA process sequence is similar to the electroplating sequence. Step 5 can be disabled to preserve
the PMMA stencil in the 3-D solid model.
Figure D3-32 Example Results for LIGA
Section 3: The Process Editor Version 2010
U3-34 March 19, 2010 Coventor, Inc.
Lift-Off
In lift-off processes, a sacrificial material, such as a photoresist, is first deposited and patterned on the substrate. The
material of interest, usually metal, is then deposited on top and the sacrificial material subsequently removed, leaving
behind only the material deposited directly on the substrate (provided that the metal thickness is smaller than the
resist thickness). This process is useful for patterning materials that cannot be etched without affecting underlying
materials on the substrate or with metals that are difficult to etch with plasmas.
The implementation of the lift-off process is similar to the one for electroplating. It consists of four substeps:
1. Resist deposition: The wafers are coated with positive photoresist.
2. Resist patterning: The wafer is lithographically patterned by exposing the photoresist and developing it.
3. Metal evaporation: After developing the resist, a metal is deposited over the photoresist pattern, typically by
evaporation.
4. Stripping of resist: Finally, the photoresist is removed.
Figure D3-33 Sample Lift-Off Process
When using a positive polarity for a layout layer and a dark field mask, the user should draw the areas where the pho-
toresist will be opened to allow metal deposition in the openings, thus defining the desired structures.
Note that for this CoventorWare process sequence, the final metal thickness is defined by the thickness of the resist
plus the thickness of the evaporated metal layer, and the latter must be defined as negative, with an absolute value
smaller than the photoresist thickness. In other words, the final metal thickness is the difference between the resist
thickness (Step 2) and the absolute thickness value of the evaporated metal (Step 3). An alternative modeling method
is used in the electroplating sequence. Step 4 can be disabled to preserve the resist in the 3-D solid model. The metal
deposited on top of the resist is not considered in this model. Typical lift-off processing effects, such as so-called "lift-
off flags," are also not modeled.
Anodic Glass Wafer Bonding
Anodic bonding between a silicon and a glass wafer is generally used for wafer-level encapsulation. The substrates
are bonded at elevated temperature (~400 C) by placing and clamping the substrates between two metal electrodes.
A high DC potential (up to ~1kV) is applied between the electrodes, creating an electrical field that penetrates the
substrates. One substrate is glass that contains sodium ions, which at the elevated temperature are displaced from the
bonding surface of the glass by the applied electrical field. The depletion of sodium ions near the surface of the glass
makes the surface highly reactive with the silicon surface of the other substrate, forming a solid chemical bond.
The modeling sequence Anodic Glass Wafer Bonding consists of two steps:
1. Bonding of the glass wafer
2. Etch (Optional)
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-35
M



Figure D3-34 Sample Process Using Anodic Glass Wafer Bonding Sequence
The first step is the basic bonding process emulated by simply attaching an additional glass substrate to an existing
(and usually structured) silicon wafer. The thickness of the glass wafer needs to be defined. The second step is etching
a via into the glass wafer. When using a positive polarity for a layout layer and a dark field mask, the user should
draw the areas where the photoresist will be opened to allow etching of the desired feed-through. The user should
define the etch depth, undercut (offset), and sidewall angle. The second step is optional and can be disabled if not
needed.
Figure D3-35 Layout and 3-D Model Generated with Anodic Glass Wafer Bonding
With the Stack Deposition modeling action, the top glass wafer will be attached to the highest point of the bottom
wafer.
Section 3: The Process Editor Version 2010
U3-36 March 19, 2010 Coventor, Inc.
Silicon Fusion Bonding
Two silicon substrates are first forced into intimate contact by applying a high contact force. Once in contact, the sub-
strates are held together by atomic attraction forces (Van der Waal), which are strong enough to allow the bonded sub-
strates to be handled. The substrates are then placed in a furnace and annealed at high temperature, after which a solid
bond is formed between the substrates.
Similar to the Anodic Glass Wafer Bonding sequence, the Silicon Fusion Bonding Sequence consists of two steps:
1. Bonding of the silicon wafer
2. Etch (Optional)
Figure D3-36 Sample Setup for Fusion Bonding
The first step is the basic bonding process emulated by simply attaching an additional silicon substrate to an existing
(and usually structured) silicon wafer. The thickness of the silicon wafer needs to be defined. The second step etches
a via into the silicon wafer. When using a positive polarity for a layout layer and a dark field mask, the user should
draw the areas where the photoresist will be opened to allow etching of the desired feed-through. The user should
define the etch depth, undercut (offset), and sidewall angle. The second step is optional and can be disabled if not
needed.
Figure D3-37 Example 2-D Layout and 3-D Result for Fusion Bonding
With the Stack modeling action, the top silicon wafer will be attached to the highest point of the bottom wafer.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-37
M



References
[1] MEMS and Nanotechnology Exchange: http://www.mems-exchange.org/catalog/
[2] Marc Madou, Fundamentals of Microfabrication, ISBN 0-8493-9451-1, CRC Press, 1997.
[3] Stephen Senturia, Microsystem Design, ISBN 0-7923-7246-8, Kluwer Academic Publishers, 2001.
3.5: Foundry Processes
Independent foundry data include processes, material databases, and layout template files for the following foundries:
DALSA Semiconductor, QinetiQ, Infineon Technologies, Tronics, MEMSCAP, and Beijing University. The pro-
cesses are accessible from the Process Editors Process Library pane under the Foundry Processes folder. The user
can load them into the Process Editor by simply double-clicking on the desired process. Multiple process files can be
opened at the same time. The material databases for each process are placed in the user's Shared folder during instal-
lation and are selectable from the Function Manager. The layout template files are placed into the user's
\Shared\Layout_Templates folder during installation. These layout templates will appear in the Layout file fields
drop-down menu. They can also be selected using New from Template from a drop-down menu next to the Layout
Editor icon. When a layout template is selected, the Layout Editor opens with the specified template already loaded.
The layout template includes GDSII layer numbers, as well as the mask names for the specific manufacturing pro-
cesses and are compatible to the design handbooks provided by the different foundries.
In addition, all foundry-related files are in CoventorWare2010\apps\Foundry.
For more details on the foundry design kits shipped with CoventorWare, see the section starting on page U4-1.
3.6: Menus
This section documents the options available from the Process Editor menu bar. Each menu bar function is described,
and any alternate method of performing the same function is listed.
3.6.1: File
The File menu is used for file management. It includes the following functions:
New: This option allows the user to open a new, blank process file. When it is selected, the Process Descrip-
tion window opens. The keyboard shortcut in Ctrl + N. The equivalent icon is .
Open: This option opens a file selection dialog. Recently opened process files are listed in the File name field
drop-down window. Note that more than one process file can be open at the same time. The keyboard short-
cut is Ctrl + O. The equivalent icon is .
Save: This option saves the active process file. If the file had not been previously saved, a file save dialog will
open. The keyboard shortcut is Ctrl + S. The equivalent icon is .
Save As: This option allow the user to save the active process file under a new name. It opens a file save dia-
log.
Properties: This option opens the Properties dialog, which displays the file properties such as creation date,
version number. It also allows the user to make the file editable or uneditable, and to set a password. For more
information on this window, see the File Properties heading below.
Recent Files: This option has a submenu that contains the four most recently opened files. These options
allow the user to open one of these files without having to navigate to its directory location.
Double clicking on a foundry process in the Process Library automatically creates a new process file.
Section 3: The Process Editor Version 2010
U3-38 March 19, 2010 Coventor, Inc.
Close: This option closes the active process file.
Exit: This option closes the Process Editor.
File Properties
This dialog displays file properties, including file creation date, file creator, the date last saved, and by whom the file
was saved. These properties cannot be edited.
User version number
By default, the software assigns a version number that is incremented each time the file is saved. The user can
edit this field, but once the user modifies it, it will no longer be auto-incremented.
User Comments
This field allows the user to add text. This field is useful for descriptive information pertaining to the file.
Editable
This check box can be set by any user who can open the file. Unchecking this box will prevent a user from unin-
tentionally changing a file.
Password
If a password is set, the file cannot be opened unless the user enters the correct password. When the file is
selected for opening, the Enter Password dialog appears.
3.6.2: Edit
Undo: There is no restriction on the number of undo actions.The keyboard shortcut is Ctrl + Z. The equiva-
lent icon is .
Redo: The keyboard shortcut is Ctrl + Y. The equivalent icon is .
Cut: The keyboard shortcut is Ctrl + X. The equivalent icon is .
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-39
M



Copy: The keyboard shortcut is Ctrl + C. The equivalent icon is .
Paste: This function has three options: Above, Below, and After Last. There is no keyboard shortcut or equiv-
alent icon.
Delete: The keyboard shortcut is Del. The equivalent icon is .
Sequence
Create: Creates a new sequence using the selected steps. Use the Ctrl or Shift keys to select the steps to
be included in the sequence.
Flatten: Eliminates the sequence hierarchy. Substeps of the selected sequence become steps in the
process and are no longer part of a sequence.
Expand: Expands the selected sequence so that all its substeps are visible; equivalent to clicking on the
+ sign beside the sequence step number.
Collapse: Collapses the expanded sequence so that only its substeps are hidden. Only the sequence step
name is visible. This function is equivalent to clicking on the - sign beside the sequence step number.
Enable/Disable: These settings determine if the selected step will be used to build the solid model. Their
functionality is equivalent to the Enable Steps and Disable Steps icons.
Add to Library: Adds the selected step or sequence to the Process Steps folder of the active Process Library.
3.6.3: View
Expand All: Expands all sequence steps in a process so the their substeps are visible.
Collapse All: Collapses all sequence steps in a process.
Columns: This option opens a dialog for selecting columns to be displayed in the Process Description win-
dow. By default, all columns are displayed.
Clipboard: This option opens a dialog that displays any steps that have been copied during a Process Editor
session. The steps appear as icons, but when the user moves the cursor over the icon, a tool tip will display
the name of the step. If multiple steps are copied at once, they will appear as a single icon in the Clipboard.
Section 3: The Process Editor Version 2010
U3-40 March 19, 2010 Coventor, Inc.
3.6.4: Tools
The Tools menu has two submenus: Edit Process Steps Library and Options.
Edit Process Steps Library
This option allows the user to edit the default values of a step or to delete a step in the Process Steps library. It opens
the Process Steps library as a fab process, and all its steps are displayed in the Process Description pane. The steps
can then be edited or deleted. Click on the Save icon or select File > Save to save the changes to the Process Steps
library. To close the Process Steps library process, click on the End Edit Mode button that appears above the Process
Library pane. If the process was saved, any changes that the user made while in Edit Mode now appears in the Pro-
cess Library pane.
Options
This selection opens a dialog for setting a default process library, error checking, and automatic save intervals. When
the user selects an option in the right pane of the dialog, the related settings are displayed in the left side of the dialog.
Options: Process Library
This option sets the default process library process file. The steps in that file determine the steps that appear in the
users Process Steps folder in the Process Library window. CoventorWare includes a default Process Library file that
is located in \Design_Files\Shared\Process.
Dock Window Options sets the location of the Process Library pane.
Options: Save
This dialog allows the user to enable/disable the AutoSave function. If enabled (default setting), the active process
file will be saved at time intervals specified in the Save Interval field.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-41
M



Foundry Folder
This option sets the default foundry folder. The files in that folder determine the steps that appear in the users
Foundry Folder in the Process Library window. CoventorWare includes a default Foundry folder that is located in
\CoventorWar2010\apps. When CoventorWare is first installed, the folder is copied to the users \Design_Files\
Shared\Process directory. This folder contains several sequence steps that are recognized foundry processes, includ-
ing Polysilicon from IMEPKU, MetalMUMPS, PolyMUMPS, INTEGRAMplus DRIE based SOI (DPK), INTE-
GRAMplus Metal Nitride (MPK,) INTEGRAMplus Polysilcion (PPK), SoiMUMPS, and Tronics EpiSOI.
3.6.5: Window
The Windows menu lets the user control what is displayed in the Process Description window and control how it is
displayed. The menu list the open process files, and the user can select a file from the list to make it active. If more
than one file is open, the user can also select from one of these options:
Cascade: This option makes all open files active, and displays them so that one is on top of the other, with the
title bar for each file visible.
Tile: This option displays all open files so that they are beside each other in the Process Description window.
Tile Horizontally: This options displays all open files so that they are underneath each other.
3.6.6: Help
This menu includes a Reference option, which is a link to the Process Editor reference documentation.
The About Process Editor option opens a dialog that displays the Process Editor version number.
The Whats This? option activates a question mark roll-over feature. When the user moves the question mark over a
dialog and clicks, the on-line help will display information relevant to that dialog. The same functionality is activated
with the Whats this icon.
3.6.7: Right Click Menus
Many of the Process Editor menu functions are also available by right-clicking on a field or step, and selecting an
option from the pop-up menu. The options available are determined by which field or step has been selected.
Right-clicking on a process step opens a pop-up menu with these options:
Cut
Copy
Paste: Above, Below, After Last
Delete
Add to Library
Create Sequence
Section 3: The Process Editor Version 2010
U3-42 March 19, 2010 Coventor, Inc.
Flatten Sequence
Move Up
Move Down
Enable/Disable
Right clicking on select fields in the Step Parameters window opens a pop-up with these options:
Undo
Redo
Cut
Copy
Paste
Clear
Select All
Right clicking on a step in the Process Library window opens a pop-up with these options:
Insert Above Current Step
Insert Below Current Step
Insert After Last Step
3.7: Deposit and Etch Basics
MEMS processing can range from the simple to the complex, depending on the fabrication specifications and the
level of integration with other types of structures on the substrate. All MEMS processes can be reduced for Process
Editor purposes to a series of deposit and etch sequences that will simulate the electrostatic and mechanical parame-
ters of the design.
In the Process Editor, three different types of deposit techniques can be modeled, as shown here:
Figure D3-38 Modeled Deposit Types
In Figure D3-38, each of the four examples shown starts out with an etched layer (light green). The three deposit
types are shown in dark green and represent ways in which deposited material can flow over non-uniform surfaces.
Planar Fill
Stacked
Conformal Shell
SCF = 1
SCF = 0.5
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-43
M



Planar deposits fill in any uneven areas and result in a uniform deposition over the top of the surface. The thickness
specified for the planar fill determines the layer thickness with a reference point to the highest point in the Z-direc-
tion. If the thickness is negative, the structure will be thinner than the mold layer. For example, in the electroplating
sequence on page U3-32 the mold layer is 5 m thick. Defining a planar fill with -3 m results in a structure height of
2 m (5 m - 3 m). If the thickness is positive, this means the mold will be filled to the top plus the additional thick-
ness determined by the thickness value, as shown in Figure D3-38. If a thickness of 0 is specified for the planar fill,
the mold will be filled exactly to its surface.
Stacked deposits are more rigid depositions that lay on top of any irregularities in the surface, but which do not fill in
any of these areas. The Conformal Shell deposit conforms to the profile of the surface and flows over the uneven lev-
els of the material already present. Variation in the Surface Conformality Factor changes the thickness of the vertical
part of the deposit with respect to the horizontal deposit. These different deposit types are used for different reasons in
the sequence of processing a MEMS design. Examples in this section illustrate the relationship of the deposit steps to
the rest of the processing sequence. It should be borne in mind that CoventorWare does not distinguish between what
can and cannot be fabricated in an actual foundry process.
Etching selectively removes some or all of any deposited material. Etches define MEMS mechanical components,
active transistors, and other structures. Etching is accomplished by first placing a mask over a deposited area. The
simplified mask example shown in Figure D3-39 (top view) is used to coat the wafer with material that resists etching
in the shaded area of the mask (known as a positive-polarity mask). After a sequence of chemical processing, the
etchant creates two holes by removing the small rectangular areas of the deposited material on the top surface of the
wafer (and the material outside the dark rectangle). The examples in this section illustrate the relationship of the etch-
ing steps to the rest of the processing sequence.
Figure D3-39 Simplified Version of Mask Used for MEMS Processing
3.7.1: Side Settings
The user selects which side of the wafer to apply a deposit or an etch. A Front Side setting applies the deposit or etch
to the front side of the wafer. The Back Side setting applies the deposit or etch parameters to the back side of the
wafer. Figure D3-40 shows the same device that had a conformal deposit applied to the front and backside of a wafer
Figure D3-40 Side Deposit Examples
frontside
backside
Section 3: The Process Editor Version 2010
U3-44 March 19, 2010 Coventor, Inc.
3.7.2: Conformal Deposit after a Release Step
In CoventorWare 2010, a process file can have more than one release step (specified with the Delete modeling
action). The release step can be in the middle of a process; this makes floating parts (volumes without any support)
and faces in the -Z direction possible. If a release step is followed by a conformal deposit, any faces that can be
accessed after the release will be covered by the deposit material. Figure D3-41 shows a sample device after a release
step. The green line outlines the faces that are accessible for a front side conformal deposit. Note that boundary faces
and faces belonging to the bottom faces are ignored for a front-side operation.
Figure D3-41 Accessible Faces after a Release Step
Figure D3-42 demonstrates the result of a front-side conformal deposit after a release step. Note that the deposit is on
both sides of the floating parts and the -Z faces because those faces are accessible from the front side after the release.
Figure D3-42 Front-Side Conformal Deposit after a Release Step
Figure D3-43 shows a back-side conformal deposit after a release step.The material is deposited on all the faces
accessible from the bottom, including the floating part and the +Z faces.
Figure D3-43 Back-Side Conformal Deposit after a Release Step
3.7.3: Basic MEMS Process
All processes start with a base substrate. The Process Editor then uses a combination of deposit and etch sequences to
build and selectively define the layers that make up the structures to be modeled. The largest variation is with the type
of deposit step, which is tailored to the structures to be fabricated and the particular process line used for fabrication.
An example is a simple cantilevered beam. The sequence is shown in Figure D3-44.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-45
M



Figure D3-44 Cantilever Beam Process Sequence
A series of deposit and etch sequences builds the supports and creates the electrical device that controls the cantile-
vered beam movement. By controlling deposit thickness, the correct spacing between the beam and the underlying
ground plane is achieved for proper beam deflection.
The sacrifice layer shown in the diagram starts out as material that supports the beam during processing. It serves no
electrical purpose, and is etched away when processing is complete to allow free movement of the beam.
Two types of deposit steps previously described are used. The initial stacked deposit on top of the base allows the
beam metal to lay flat on top of the underlying layers. The conformal deposits for the metal follow the contours of the
processed wafer.
The simple process sequence shown involves eight different steps. In an actual foundry process, several other steps
are required, but are removed here for clarity. Typically, the base substrate is much greater than the 10 shown, but
for the purposes of this modeling the actual thickness is not important. The process that the software needs to simu-
late is even more basic because the electrostatic and mechanical solutions require specification only for the compo-
nents that affect the beam characteristics. This example does not simulate the functional performance of the structure,
so steps that involve the creation of the control devices (such as electrodes to attract the beam) are not included.
4 m PSG Stacked
1 m titanium
2 m gold
10 m silicon
Use negative mask to
create cantilever profile
Conformal deposit
SP1 etch
Conformal deposit
SP1 etch
PSG removed
Base substrate
Deposit sacrifice layer
SP2 Etch
Deposit beam metal 1
SP1 Etch
Deposit beam metal 2
SP1 Etch
Delete sacrifice layer
deposit
(Etch not visible from
this perspective)
(Etch not visible from
this perspective)
Section 3: The Process Editor Version 2010
U3-46 March 19, 2010 Coventor, Inc.
3.7.4: Structure of a Process File
This section is an overview of process file creation. Within each line are settings for the parameters that are used in
creating the step. Any setting can be edited by clicking in the appropriate area on the line, and then entering the
desired setting in the Step Parameter fields.

3.7.5: Building a Process Sequence
What follows is a process sequence for the cantilevered beam shown in Figure D3-44. Colors and mask names are
imported by the Layer Browser when the process file is selected during layout creation.
Step 0 - Substrate
Step 1 - Deposit Sacrifice Layer
To see a list of materials appear in the Materials column of the Process Editor, set the correct path to the MPD file
you will use in the Materials field of the Function Manager. If the path is not set, select the folder icon next to the
field and navigate to the correct file.
The Substrate is the starting point for all process sequences. This first step in the Process Editor is the only step that
cannot be deleted or placed in another position. The Substrate step appears automatically (with a default thickness of
50m) whenever a new process file is created. This layer defines the boundaries of the active areas of the layout. The
material, thickness, layer name, and mask name are specified by clicking on the step, and then editing the fields in the
pane below the list of steps. Silicon is the typical material used for the substrate, analogous to the silicon substrate
upon which the wafer structures are built. The material and thickness settings are actually not relevant for this type of
device because generally the structures above the Substrate are the only parts of the component used by the solvers.
This deposit will provide temporary support for the cantilevered beam. It is called Sacrifice because it will be com-
pletely etched away at the end of the process sequence to permit free deflection of the completed beam. Each deposit
is assumed to cover the entire surface beneath it, so deposit extents are not defined. This layer is simply stacked on
top of the existing base. The phosphosilicate glass (PSG) material (selected from the Materials Database) and thick-
ness are derived from process line specifications. Their values are included in the flow because they affect the spac-
ing between the beam and the electrode. This spacing is significant because it affects capacitance, one of the beams
electromechanical characteristics.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-47
M



Step 2 - Etch PSG
This is the first etch step. The selective etch requires a mask to define the locations where PSG material is to be
removed. The StraightCut with the Cut Last Layer Completely and Front Side settings means this etch that will go
completely through the previous deposit. Because the Cut Last Layer Completely is selected, there is no need to spec-
ify an etch depth. The anchor mask, defined in the Layout Editor, will define the area to be etched. The minus (-) sign
indicates that it is a negative polarity maskthe areas under the clear portions of the mask are protected from the
etch operation. The Offset setting allows optional oversizing or undersizing of the mask during the etching step. The
SidewallAngle setting refers to the draft angle slope of the etch profile on the deposit sidewall. Because no angle is
specified, the sidewalls will be perpendicular.
Section 3: The Process Editor Version 2010
U3-48 March 19, 2010 Coventor, Inc.
Step 3 - Deposit Beam Metal 1
Step 4 - Etch Titanium
This next deposit must conform to the contours of the surface, so a Conformal Shell deposit is used. The titanium
material is specified with a 1.0m thickness. The titanium forms half of the metal sandwich that is used to create the
movable beam. The default value of 1 for the Surface Conformality Factor (SCF) means that the vertical surfaces of
the deposit are the same thickness as the horizontal surfaces.
This etch step defines the actual beam area. While no difference is seen in the cross-section, a top-down view would
show the specific area where titanium is etched away. The beam mask name appears as a layer name in the 2-D draw-
ing. This etch step also uses the Cut Last Layer Completely and Front Side settings. The plus (+) sign to its right indi-
cates that it is a positive maskthe areas under the opaque portions of the mask are protected from the etch
operation. No offset or sidewall angle is specified. Etchants are selected by the foundry and are not identified in the
process file.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-49
M



Step 5 - Deposit Beam Metal 2
Step 6 - Etch Gold
Step 7 - Delete Sacrifice Layer
A Conformal deposit is specified because this deposit must conform to the contours of the surface. Gold is specified
with a 2.0m thickness. The gold forms the other half of the 3.0m metal sandwich that is used to create the movable
beam. As before, the Surface Conformality Factor is left at 1 so that the vertical portion of the deposit is the same
thickness as the horizontal portions.
This step uses the beam mask again, this time to etch the gold deposit. The Straight Cut step is used with the Cut Last
Layer Completely and the Front Side settings. While no difference is seen in this cross-section, a top-down view
would show that the gold is etched away in exactly the same places as the titanium was in Step 4. A positive polarity
mask with no offset or sidewall angle specified.
For the final step, a Delete Modeling Step is selected, and PSG is selected as the Material. This step removes the any
PSG material in the process steps. With the layer removed, the beam may now deflect freely under application con-
trol in the final fabricated device. This completes the process characterization.
PSG removed
Section 3: The Process Editor Version 2010
U3-50 March 19, 2010 Coventor, Inc.
3.8: Etch Conventions
In addition to the etch depth, the values of the Photoresist, Offset, and SidewallAngle settings in the Process Editor
determine the shape and size of a feature or etch. The use of various combinations of positive and negative signs may
be confusing; therefore, these illustrations are included to clarify the meaning of a sign when used for a particular
field.
3.8.1: Photoresist
In the simplest terms, a mask with a positive photoresist results in a feature created from the deposit layer; a negative
mask results in a hole in the layer. The examples that follow show the same layout mask (Figure D3-45) and the
resulting solid model when a positive or negative photoresist is applied to the mask.
Figure D3-45 2-D Layout
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-51
M



Figure D3-46 Positive Photoresist and Resulting Solid Model
Section 3: The Process Editor Version 2010
U3-52 March 19, 2010 Coventor, Inc.
Figure D3-47 Negative Photoresist and Resulting Solid Model
3.8.2: Offset
The Offset parameter can be used to increase or decrease the area of the mask material in the positive or negative XY
plane.
To apply offsets specified in the Process Editor to a solid model, make sure to check the Apply Offset Values on the
Designer tab.
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-53
M



Figure D3-48 Front Side Etch by Depth, Positive Photoresist, with Offset
X
X
X
Etched material with a positive offset Etched material with a negative offset
Material to be etched
(height of the deposit layers)
Mask
+ + - -
Section 3: The Process Editor Version 2010
U3-54 March 19, 2010 Coventor, Inc.
Figure D3-49 Front Side Etch by Depth, Negative Photoresist, with Offset
Material to be etched
Etched material with a negative offset
Etched material with a positive offset
X
X X
_
+ +
_
(height of the deposit layers)
Mask
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-55
M



Figure D3-50 Back Side Etch by Layer, Positive Photoresist, with Offset
Material to be etched
Etched material with negative offset Etched material with positive offset
X
X X
(height of the deposit layers)
Mask
+ + - -
Section 3: The Process Editor Version 2010
U3-56 March 19, 2010 Coventor, Inc.
Figure D3-51 Back Side Etch by Layer, Negative Photoresist, with Offset
Material to be etched
X
X X
Etched material with a negative offset Etched material with a positive offset
(height of the deposit layers)
Mask
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-57
M



3.8.3: Sidewall Angles
Sidewall angles can be defined with either a positive or negative value. For positive angles, the walls will diverge
away from the drawn feature. For negative angles, the walls will converge toward the interior of the drawn feature:
Figure D3-52 Sidewall Convention

Figure D3-53 through Figure D3-56 show the results of using sidewall angles with different etch parameters.
In Finite Element Analysis, sidewall angles increase the complexity and simulation time, but do not necessarily
increase the accuracy of the solution.
Front, positive sidewall etch
Back, positive sidewall etch
Front, negative sidewall etch
Back, negative sidewall etch
Section 3: The Process Editor Version 2010
U3-58 March 19, 2010 Coventor, Inc.
Figure D3-53 Front Side Etch by Depth, Positive Photoresist, with Sidewall Angle
Etched material with a positive sidewall angle
Etched material with a negative sidewall angle
+
X X
Material to be etched
(height of the deposit layers) X
_
+
Mask
_
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-59
M



Figure D3-54 Front Side Etch by Depth, Negative Photoresist, with Sidewall Angle
Material to be etched
Etched material with a negative sidewall angle Etched material with a positive sidewall angle
X
X X
+
_
+
_
(height of the deposit layers)
Mask
Section 3: The Process Editor Version 2010
U3-60 March 19, 2010 Coventor, Inc.
Figure D3-55 Back Side Etch by Layer, Positive Photoresist, with Sidewall Angle
Material to be etched
Etch material with a negative sidewall angle Etch material with a positive sidewall angle
+
_ _
+
X
X X
(height of the deposit layers)
Mask
Section 3: The Process Editor Version 2010
Coventor, Inc. March 19, 2010 U3-61
M



Figure D3-56 Back Side Etch by Layer, Negative Photoresist, with Sidewall Angle
To analyze a model with multiple sidewall angled structures, each layer must be meshed as a separate model, and
then merged.
Material to be etched
Etch material with a positive sidewall angle
Etch material with a negative sidewall angle
+
_ _
+
X
X X
(height of the deposit layers)
Mask
Section 3: The Process Editor Version 2010
U3-62 March 19, 2010 Coventor, Inc.
Notes
Section 4: Foundry Design Kits Version 2010
Coventor, Inc. March 19, 2010 U4-1
M



Section 4: Foundry Design Kits
CoventorWare includes several foundry design kits, also called process access kits, which provide the material and
process information necessary to fabricate a design according to the specifications of the selected foundry. The kit
provides parameters such as layer thickness, Youngs modulus, Poissons ratio, and stress gradient, which have been
well defined within the tolerances of the specific manufacturing process. The kit automatically sets these constraints
for the designer, allowing other design parameters to be varied during the evaluation of designs and allowing only
those designs that are perfectly compatible with the manufacturing process.
Each foundry design kit includes the following:
a library of process emulation files (.proc), which define foundry-specific processes
a material properties database, (.mpd), which provides foundry-specific values associated with materials,
such as tensile strength and boundary conditions
a layout template file (.cat), which contains geometric and process descriptions for predefined MEMS ele-
ments.
Some design kits also include a runsetDRC.rs file, which can be used to verify that the 2-D layout conforms to a
foundrys design specifications.
The following foundry design kits are included in CoventorWare 2010:
DALSA (page U4-2)
IMEPKU (page U4-29)
INTEGRAMplus DPK, MPK, and PPK (page U4-5)
MEMSCAP MetalMUMPS, PolyMUMPS, and SOIMUMPS (page U4-15)
SensoNor MultiMEMS (page U4-12)
Tronics 60m SOI-HARM (page U4-21)
SINTEF MoveMEMS PZT (page U4-24)
Two additional processes for SIMIT and CETC are available as beta versions in the installation (in
CoventorWare2010\apps\misc), but are not automatically loaded in the Process Editor.
The following sections provide basic information about the foundry processes and their implementation, but do NOT
replace the design handbooks that are provided by the foundries themselves. Any further questions regarding those
processes can be directed to the foundries using the contact information listed in each section.
The foundry process library is not designed to emulate all geometric details of the real MEMS process, but to
enable the generation of usable solid models based on the specific process. To attain a higher level of geometric
details, it is best to use MEMulator, distributed by Coventor, Inc.
The authors of the foundry process files will not be responsible for any error or damage caused by the use of the
CoventorWare tools and technology files during design and/or manufacturing processes, nor for loss of data, data
being rendered inaccurate, or losses sustained by the user or third parties, or any other failure.
Section 4: Foundry Design Kits Version 2010
U4-2 March 19, 2010 Coventor, Inc.
4.1: DALSA Semiconductor: MEMS Post-Processing on
CMOS
DALSA Semiconductor offers a cost-effective prototyping service that builds on its CMOS Multi Project/ Product
Wafers (MPW) run with MEMS post-processing. This service drastically reduces the new product research and intro-
duction cost by sharing the expenses of mask set and wafer processing among multiple users. The service is accessi-
ble through CMC Microsystems (Canadian Microelectronics Corporation).
DALSA Semiconductor is the only foundry that combines micromachining processes and specialized high-voltage
CMOS technologies (conventional CMOS is also available). With MEMS post-processing fabrication services on
CMOS, industrial or academic researchers can further integrate MEMS Devices with CMOS or HV-CMOS control
for actuating or sensing.
4.1.1: Basic Process Description
With interconnect layers as structural materials, MEMS/MST devices can have very narrow lines and small spacing,
thus, low parasitic capacitances. Different combinations of layers (dielectrics, metals) are possible to create various
stacks. The different combinations of residual stress enable the development of a variety of applications:
inertial sensors: accelerometers, gyroscopes,
pressure sensors: microphones, micro speaker,
scanning mirrors,
high-quality inductors,
tunable capacitors,
infrared sensors, and
RF MEMS
DALSA Semiconductor's MEMS post-process for substrate manufactured with standard CMOS/DMOS technologies
is a structural release process using one mask and a two-step cavity etch:
The first step is an anisotropic etch. Structural materials are metals and oxides masked by metal. Nitride and
oxides, unmasked by metal, are etched. This step cuts the shapes of the metal patterns down to the substrate
bulk.
The second step is an isotropic etch. Structural materials are nitride, oxides and metals. Silicon is sacrificial.
This step is designed to etch the bulk below the metal/oxide patterns.
More details about the process, such as design rules and process descriptions, can be found in the recent version of
foundry MEMS design kit user guide, available from DALSA Semiconductor (see page U4-5 for contact informa-
tion).
Section 4: Foundry Design Kits Version 2010
Coventor, Inc. March 19, 2010 U4-3
M



Figure D4-1 Device Designed with the DALSA CMOS MEMS Process
Figure D4-2 Schematic Cross-Section of DALSA CMOS MEMS Process
4.1.2: Implementation and Process Files
The following CoventorWare-compatible files are available for design with DALSA's MEMS CMOS process:
process located in \\Design_Files\Shared\Foundry folder: DALSA_ MK08I1.proc
a material properties database (MPD) file (DALSA_MK08I1.mpd, located in \\Design_Files\Shared\MPD)
a layout template file (DALSA_MK08I1.cat, located in \\Design_Files\Shared\Layout_Templates)
There are three major restrictions when using MK08I1 process files for DESIGNER:
The top metal in the layout must enclose the metal(s) below.
The user must generate the MERGE data layer according to the following boolean operation: CAVITY not
currentTOPMETAL.
When building the solid model, the user must choose the sequence corresponding to its current layout top
metal and disable the sequence for the other two top metals.
The CAVITY and MERGE data layers are available through the layout template file. The currentTOPMETAL layer is
the highest metal layer used in your design layout, and it can be either METAL1, METAL2, or METAL3.
Section 4: Foundry Design Kits Version 2010
U4-4 March 19, 2010 Coventor, Inc.
The DALSA_CMOS_MEMS_ MK08I1 process as it appears in the Process Editor is shown below:
Figure D4-3 DALSA Process
Figure D4-4 Solid Model Generated with DALSA CMOS MEMS Process
Section 4: Foundry Design Kits Version 2010
Coventor, Inc. March 19, 2010 U4-5
M



4.1.3: Contact Information
More information, including fabrication schedule and design user guide, can be obtained by contacting CNC or
DALSA Semiconductor directly:
4.2: INTEGRAMplus QinetiQ Micromachining Processes
INTEGRAMplus is a one-stop shop set up to accelerate the development and commercialization of discrete and inte-
grated microsystems.
INTEGRAMplus offers full service from concept and design, through development, to volume production. Low cost
routes to prototype microsystems technology can be accessed either by sharing a Multi-Project Wafer or running a
Single Project Wafer, with a dedicated wafer for the user (with small or shared batches to control costs).
By pooling prototyping and manufacturing capabilities from QinetiQ with CAD software and design expertise from
Coventor, INTEGRAMplus is able to transfer ideas into devices.
INTEGRAMplus is a manufacturing cluster in Europractice - a European Community initiative. By providing access
to design, prototyping, and manufacturing facilities, it aims to stimulate wider exploitation of microtechnologies by
European industry.
The following section provides basic information about INTEGRAMplus processes and their implementation in Cov-
entorWare. The files are complementary to the design handbooks that are provided by QinetiQ. Further questions
regarding INTEGRAMplus processes can be directed to QinetiQ (see page U4-11 for contact information).
4.2.1: DRIE-based SOI Micromachining Process (DPK)
Basic Process Description
The SOI (Silicon On Insulator) Micromachining Process uses patterning and DRIE (Deep Reactive Ion Etching) of
the device layer to deliver free-standing, crystal silicon structures in a bonded SOI substrate from qualified commer-
cial sources. DRIE is a high-performance MEMS fabrication process that enables designers to generate deep, high-
mass or high aspect ratio structures with vertical sidewalls.
The standard INTEGRAMplus DPK process is different from surface micromachining processes in that the structural
layer is much thicker and can be set to 25 m or 50 m. A cross-section of the layers is shown below:
CMC Microsystems
Canadian Microelectronics Corporation
210A Carruthers Hall
Kingston, Ontario
Canada, K7L 3N6
Phone: (613) 530-4666
Web: http://www.cmc.ca
DALSA Semiconductor, Inc.
18, Boul. de l'aroport
Bromont, Quebec
Canada, J2L 1S7
Phone: (450) 534-2321
Web: http://www.dalsasemi.com
Email: [email protected]
Copyright QinetiQ Ltd, 2005
Section 4: Foundry Design Kits Version 2010
U4-6 March 19, 2010 Coventor, Inc.
Figure D4-5 Cross-Section of the INTEGRAMplus DPK Process
This standard process is offered on a Multi-Project Wafer and a Single-Project Wafer basis. There are regular runs
scheduled throughout the year.
More details about the process, such as design rules and detailed process description, can be found the in the recent
version of the DPK design handbook available from QinetiQ (see page U4-11 for contact information).
Implementation and Process Files
The following CoventorWare-compatible files are available for design with INTEGRAMplus DPK process:
two processes in the Process Librarys Foundry Processes folder (INTEGRAMplus_DPK_full and
INTEGRAMplus_DPK_simple)
a material properties database (MPD) file (INTEGRAMplus_Materials_Database.mpd, located in
\\Design_Files\Shared\MPD)
The layout template file (INTEGRAMplus_DPK.cat, located in \\Design_Files\Shared\Layout_Templates)
an INTEGRAMplus_DPK_runsetDRC.rs, which includes the INTEGRAMplus DPK design rules, located in
\\CoventorWare\apps\Foundry. This file can be executed from Tools > Layout Checks >Batch Rule Checks >
Run Checks; see page D3-96 for more details.
The INTEGRAMplus_DPK_full process as it appears in the Process Editor is shown below:
The INTEGRAMplus_DPK_simple process is a simplified version of the full (complete) process sequence. The sim-
plified version does not include metallization and ignores the oxide anchors. The simplified process variant is recom-
mended for use in ARCHITECT simulations.
Figure D4-6 shows a 3-D solid model construction of a resonator device based on the QinetiQ DPK process (left) and
a SEM image of the fabricated resonator (right).
Not to scale
Silicon
Metal1
SILICON1
OXIDE0
Note: Cross-section generated in MEMulator 2008
Section 4: Foundry Design Kits Version 2010
Coventor, Inc. March 19, 2010 U4-7
M



Figure D4-6 Device Designed with the INTEGRAMplus DPK Process
A more detailed description of an design example based on the DPK process can be found in the recent version of the
DPK design handbook available from QinetiQ (see page U4-11 for contact information).
4.2.2: Metal-Nitride Surface Micromachining Process (MPK)
Basic Process Description
The metal-nitride surface micromachining process is a high-performance MEMS fabrication process that delivers a
low-stress layer for structural elements including plates, membranes, and cantilevers.
Figure D4-7 Devices Created with the INTEGRAMplus MPK Process
The structural layer is a low-stress metal-nitride-metal stack that is 2.4 m thick. It is generated through low temper-
ature CMOS compatible (<450C) deposition on a silicon-based substrate.
Prior to this deposition, both a metal layer and a sacrificial layer are deposited and patterned to provide interconnect
metallization and dry release respectively.
A schematic cross-section of the layers is shown below:
Copyright QinetiQ Ltd, 2005
Section 4: Foundry Design Kits Version 2010
U4-8 March 19, 2010 Coventor, Inc.
Figure D4-8 Cross-Section of the INTEGRAMplus MPK Process
This standard process is offered on a Multi-Project Wafer and a Single-Project Wafer basis. There are regular runs
scheduled throughout the year.
More details about the process, such as design rules and detailed process descriptions, can be found in the recent ver-
sion of the MPK design handbook available from QinetiQ (see page U4-11 for contact information).
Implementation and Process Files
The following CoventorWare-compatible files are available for design with the INTEGRAMplus MPK process:
two processes in the Process Librarys Foundry Processes folder: INTEGRAMplus_MPK_full,
INTEGRAMplus_MPK_simple.
a material properties database (MPD) file (INTEGRAMplus_Materials_Database.mpd, located in
\\Design_Files\Shared\MPD)
a layout template file (INTEGRAMplus_MPK.cat, located in \\Design_Files\Shared\Layout_Templates)
an INTEGRAMplus_MPK_runsetDRC.rs, which includes INTEGRAMplus MPK design rules, located in
\\CoventorWare\apps\Foundry folder. This file can be executed from Tools > Layout Checks > Batch Rule
Checks > Run Checks. See page D3-96 for more details.
The INTEGRAMplus_MPK_simple.proc file is a simplified version of the full (complete) process sequence without
print-through topography. The simplified process variant is recommended for use in ARCHITECT simulations.
The INTEGRAMplus_MPK_full process as it appears in the Process Editor is shown below:
Silicon
Polyimide
Nitride1
Metal1b
Oxide0
Metal1a
Metal0
Note: Cross-section generated in MEMulator 2008
Section 4: Foundry Design Kits Version 2010
Coventor, Inc. March 19, 2010 U4-9
M



Figure D4-9 INTEGRAMplus_MPK_Full Process
Figure D4-10 shows a variable capacitor model designed with this process.
Figure D4-10 Architect Schematic and 3-D Model Designed with the INTEGRAMplus MPK Process
A more detailed description of a design example based on the MPK process can be found in the recent version of the
MPK design handbook available from QinetiQ (see page U4-11 for contact information).
Section 4: Foundry Design Kits Version 2010
U4-10 March 19, 2010 Coventor, Inc.
4.2.3: Polysilicon Surface Micromachining Process (PPK)
Basic Process Description
This polysilicon surface micromachining process produces a low-stress structural layer (2m) for fabricating devices
such as accelerometers and gyroscopes. Because of the high-temperature anneal used to remove stress, this process is
not compatible with CMOS.
Figure D4-11 Devices Designed with the INTEGRAMplus PPK Process
A deposited oxide is used as the sacrificial layer and then removed in an HF-based process, producing movable, sus-
pended structures. A schematic cross-section of the PPK layers is shown below:
Figure D4-12 Cross-Section View of the INTEGRAMplus PPK Process
This standard process is offered on a Multi-Project Wafer and a Single-Project Wafer basis. There are regular runs
scheduled throughout the year.
More details about the process, such as design rules and detailed process description, can be found the in the recent
version of the PPK design handbook available from QinetiQ (see page U4-11 for contact information).
Implementation and Process Files
The following CoventorWare-compatible files are available for design with the INTEGRAMplus PPK process:
two processes in the Process Librarys Foundry Processes folder (INTEGRAMplus_PPK_full and
INTEGRAMplus_PPK_simple)
Copyright QinetiQ Ltd, 2005
METAL1
Polysilicon1
Silicon
OXIDE2
OXIDE1
OXIDE0
Polysilicon0
Cross-section generated with MEMulator 2008 and
Z-Scale set to 2
Section 4: Foundry Design Kits Version 2010
Coventor, Inc. March 19, 2010 U4-11
M



a material properties database (MPD) file (INTEGRAMplus_Material_Database.mpd, located in
\\Design_Files\Shared\MPD)
a layout template file (INTEGRAMplus_PPK.cat, located in \\Design_Files\Shared\Layout_Templates)
an INTEGRAMplus_PPK_runset.rs, which includes the INTEGRAMplus PPK design rules, located in
\\CoventorWare\apps\Foundry. This file can be executed from Tools > Layout Checks > Batch Rule Checks >
Run Checks; see page D3-96 for more details.
The INTEGRAMplus_PPK_simple process is a simplified version of the complete process sequence; it does not
include print-through topography. The simplified process variant is recommended for use in ARCHITECT simula-
tions.
The INTEGRAMplus_PPK_full process as it appears in the Process Editor is shown below:
Figure D4-13 shows the 3-D result for pull-in analysis of variable capacitor example device based on the INTE-
GRAMplus PPK process (left) and a SEM image of the fabricated MEMS (right).
Figure D4-13 Device Created Using the INTEGRAMplus PPK Process)
A more detailed description of an design example based on the PPK process can be found in the recent version of the
PPK design handbook available from QinetiQ (see below for contact information).
4.2.4: Contact Information
More information, including design handbooks, can be obtained by contacting QinetiQ directly:
INTEGRAMplus Office, Malvern Technology Centre
St Andrews Road, Malvern, Worcestershire, WR14 3PS, UK
Tel: +44 1684 89 6262 Fax: +44 1684 89 5113
EM: [email protected]
Web site: www.qinetiq.com/mems or www.integramplus.com
Section 4: Foundry Design Kits Version 2010
U4-12 March 19, 2010 Coventor, Inc.
4.3: SensoNor MultiMEMS Process
4.3.1: Basic Process Description
The MultiMEMS MPW process is based on SensoNor's key, well-established technologies of
long-term stable buried piezoresistors;
sensitive surface piezoresistors;
precise control of diaphragm / mass thickness by the use of electrochemical etch-stop;
release etch of masses or moving structures by Reactive Ion Etching (RIE);
patented buried conductor crossing of anodically bonded areas;
epitaxial layer, about 3 m thick, for monocrystalline thin diaphragms and beams;
sealed and/or vented cavities by triple-stack glass-silicon-glass anodic bonding;
thermal excitation; and
piezoresistive detection.
The MultiMEMS MPW flexible process is useful for prototyping or for small volume production, as well as large
volume manufacturing. The wealth of possibilities offered by the MultiMEMS MPW process is illustrated in Figure
D4-14:
Figure D4-14 MultiMEMS MPW Process
Most of the MultiMEMS processes are password protected. They cannot be opened without the password. To
obtain the password, contact SensoNor directly; see the contact information on page U4-14. The
MultiMEMS_simple.proc file provided with CoventorWare is a simplified version of the thin membrane process
and is not password protected.
Section 4: Foundry Design Kits Version 2010
Coventor, Inc. March 19, 2010 U4-13
M



Figure D4-15 Example of MultiMEMS Device
References
http://www.multimems.com
4.3.2: Implementation and Process Files
The following CoventorWare compatible technology files are currently available to the user for designing in the Mul-
tiMEMS MPW process:
four process files in the Process Editor's Foundry Processes folder:
MultiMEMS_Thin_Membrane.proc: for thin membranes (3.1m)
MultiMEMS_Thick_Membrane.proc: for thick membranes (23.1m)
MultiMEMS_Release_Etch.proc: for perforated membranes and free-standing structures
MultiMEMS_simple.proc: a simplified version for thin membranes; is not password protected.
a material properties database (MPD) file (MultiMEMS.mpd, located in \\Design_Files\Shared\ MPD)
a layout template file (MultiMEMS.cat, located in \\Design_Files\Shared\Layout_Templates)
These files provide necessary information for simulation; for example, they enable the automatic generation of 3-D
solid models or pre-definition of certain technology parameters for piezoresistors. The implemented process files do
not necessarily represent in detail the exact process sequences as performed in the fab. The simplified process file is
not password protected, but the other process files are password protected. The password can be directly obtained
from SensoNor (see below for contact information).
The process files include a number of optional process steps that are often not required for simulation and can be dis-
abled in the Process Editor. The user can obtain additional information on the process file under the Files Properties
dialog (accessed from File > Properties) and in the comment lines of the single process steps (when the file is opened
in CoventorWare's Process Editor).
Figure D4-16 shows a 3-D solid model (top left and right) of a sensor that was designed in the MultiMEMS process.
The sensor includes a suspended seismic mass and piezoresistors for detection of the mechanical stress that occurs in
the suspension arms. The 3-D model was generated using the MultiMEMS_Release_Etch process file. Figure D4-16
also shows the corresponding ARCHITECT schematic, which includes a Wheatstone bridge composed of four piezo-
resistors and a small amplifier circuit.
Section 4: Foundry Design Kits Version 2010
U4-14 March 19, 2010 Coventor, Inc.
Figure D4-16 Example of Device Design with MultiMEMS Process
4.3.3: Contact Information
For more information, including design handbooks, NDA, and password, contact SensoNor directly:
SensoNor
Knudsrdveien 7, P.O. Box 196,
N-3192 HORTEN, Norway
PHONE: +47 - 3303 5181
FAX: +47 - 3303 5105
E-MAIL: daniel.lapad [email protected] (please use the word "MultiMEMS" in the subject field)
Web site: http://www.multimems.com
Section 4: Foundry Design Kits Version 2010
Coventor, Inc. March 19, 2010 U4-15
M



4.4: MEMSCAP MUMPs Processes
The Multi-User MEMS Processes or MUMPs is a commercial program that provides cost-effective, proof-of-con-
cept MEMS fabrication to industrial, governmental, and academic communities. MEMSCAP offers three standard
processes as part of the MUMPs program: PolyMUMPS, a three-layer polysilicon surface micromachining pro-
cess; MetalMUMPS, an electroplated nickel process; and SOIMUMPs, a silicon-on-insulator micromachining
process.
The following section provides basic information about the MUMPs processes and their implementation in Coventor-
Ware and is complementary to the design handbooks that are provided by MEMSCAP. For more detailed informa-
tion, please visit the MUMPs web pages at http://www.memsrus.com/nc-mumps.html. Design rules and other
reference material are available for download. Technical questions regarding MUMPs can be emailed directly to
MEMSCAP (see page U4-20 for contact information).
4.4.1: MEMSCAP PolyMUMPs
Basic Process Description
Figure D4-17 is a cross section of the three-layer polysilicon surface micromachining MUMPs process. This pro-
cess has the general features of a standard surface micromachining process: (1) polysilicon is used as the structural
material, (2) deposited oxide (PSG) is used as the sacrificial layer, and (3) silicon nitride is used as electrical isolation
between the polysilicon and the substrate. The process is different from most customized surface micromachining
processes in that it is designed to be as general as possible to support many different designs on a single silicon wafer.
Because the process was not optimized with the purpose of fabricating any one specific device, the thicknesses of the
structural and sacrificial layers were chosen to suit most users, and the layout design rules were chosen conserva-
tively to guarantee the highest yield possible.
Figure D4-17 Cross-Section of the PolyMUMPs Process
More details about the process, such as design rules and detailed process description, can be found in the recent ver-
sion of the PolyMUMPs design handbook available from MEMSCAP (see page U4-20 for contact information).
Types of devices that have been successfully fabricated with PolyMUMPs include microphones, sensors, accelerom-
eters, microfluidics, RF, microrobotics, and display technologies.
Note: Step 25 of PolyMUMPs.proc is displayed, and Z scale is set to 5. The model was generated in
MEMulator 2008
Section 4: Foundry Design Kits Version 2010
U4-16 March 19, 2010 Coventor, Inc.
Figure D4-18 Design Example of a Thermal Actuator Based on the PolyMUMPs Process
Implementation and Process Files
The following CoventorWare-compatible files are available for design with the PolyMUMPs process:
a process in the Process Editors Foundry Processes folder (PolyMUMPS)
a material properties database (MPD) file (MUMPS.mpd, located in \\Design_Files\Shared|MPD)
a layout template file (PolyMUMPS.cat, located in \\Design_Files\Shared|Layout _Templates)
In addition to the PolyMUMPs layout templates, layout generators are available within the Layout Editor for para-
metric active, passive, and test structure layout elements. The generators are available from the Layout Editors Gen-
erators > PolyMUMPs menu.
The PolyMUMPs process as it appears in the Process Editor is shown below:
Section 4: Foundry Design Kits Version 2010
Coventor, Inc. March 19, 2010 U4-17
M



4.4.2: MEMSCAP SOIMUMPs
Basic Process Description
The following is a general process description for SOIMUMPs, which is designed for general-purpose micromachin-
ing of Silicon-on-Insulator (SOI) structures.
The figure below is a cross section of the silicon-on-insulator micromachining SOIMUMPs process.
Figure D4-19 Cross Section Showing all Layers of the SOI-MUMPs Process
This process has the following general features:
1. A silicon-on-insulator (SOI) wafer is used as the starting substrate. This wafer has the following layer thick-
nesses:
silicon thickness: 10 1 m or 25 1 m
oxide thickness: 1 0.05 m
handle wafer (substrate) thickness: 400 5 m
2. The silicon layer is doped and patterned, and then etched down to the oxide layer. This layer can be used for
mechanical structures, resistor structures, and/or electrical routing.
3. The substrate can be patterned, and then etched from the bottom side to the oxide layer. This allows for
through-hole structures.
4. A shadow-masked metal process is used to provide coarse metal features such as bond pads, electrical rout-
ing, and optical mirror surfaces.
5. A second pad-metal feature allows finer metal features and precision alignment, but is limited to areas not
etched in the silicon device layer.
The process is designed to be as general as possible, so it is capable of supporting many different designs on a single
silicon wafer. Because the process was not optimized with the purpose of fabricating any one specific device, the
layer thicknesses were chosen to suit most users, and the design rules were chosen conservatively to guarantee the
highest yield possible.
Types of devices that have been successfully fabricated with SOIMUMPs include gyroscopes, optical devices, and
display technologies.
not to scale
Section 4: Foundry Design Kits Version 2010
U4-18 March 19, 2010 Coventor, Inc.
Figure D4-20 Design Example of a Comb-Drive Resonator Based on the SOIMUMPs Process
Implementation and Process Files
The following CoventorWare-compatible files are available for design with the SOIMUMPs process:
a process in the Process Librarys Foundry Processes folder (SOIMUMPS)
a material properties database (MPD) file (MUMPS.mpd, located in \\Design_Files\Shared\MPD)
a layout template file (SOIMUMPS.cat, located in \\Design_Files\Shared\Layout_Templates)
The SOIMUMPs process as it appears in the Process Editor is shown below:
Section 4: Foundry Design Kits Version 2010
Coventor, Inc. March 19, 2010 U4-19
M



4.4.3: MEMSCAP MetalMUMPs
Basic Process Description
The following is a general process description for MetalMUMPs, which is designed for general-purpose electroplated
nickel micromachining of MEMS.
Figure D4-21 is a cross-section of a microrelay fabricated with the MetalMUMPs process.
Figure D4-21 Cross-Section View of Microrelay Fabricated with MetalMUMPs Process
This process has the following general features:
1. Electroplated nickel is used as the primary structural material and electrical interconnect layer.
2. Doped polysilicon can be used for resistors, additional mechanical structures, and/or cross-over electrical
routing.
3. Silicon nitride is used as an electrical isolation layer.
4. Deposited oxide (PSG) is used for the sacrificial layers.
5. A trench layer in the silicon substrate can be incorporated for additional thermal and electrical isolation.
6. Gold overplate can be used to coat the sidewalls of nickel structures with a low-contact resistance material.
The process is designed to be as general as possible, so it is capable of supporting many different designs on a single
silicon wafer. Because the process was not optimized with the purpose of fabricating any one specific device, the
thicknesses of the structural and sacrificial layers were chosen to suit most users, and the layout design rules were
chosen conservatively to guarantee the highest yield possible.
Types of devices that have been successfully fabricated with MetalMUMPs include RF, relays, microfluidics, and
magnetic switches.
Figure D4-22 Design Example of Microrelay Based on the MetalMUMPs Process
Note: figure is not to scale
Section 4: Foundry Design Kits Version 2010
U4-20 March 19, 2010 Coventor, Inc.
Implementation and Process Files
The following CoventorWare-compatible technology files are available for design with the MetalMUMPS process:
a process in the Process Editors Foundry Processes folder (MetalMUMPS)
a material properties database (MPD) file (MUMPS.mpd, located in \\Design_Files\Shared\MPD)
a layout template file (MetalMUMPS.cat, located in \\Design_Files\Shared\Layout_Templates)
The MetalMUMPs process as it appears in the Process Editor is shown below:
4.4.4: Contact Information
For more information about the process, including design hand books, contact MEMSCAP directly:
MEMSCAP
4021 Stirrup Creek Drive
Suite 120
Durham, NC 27709
Telephone: +1 919-314-2235
Fax: +1 919-314-2204
Email: [email protected]
MUMPs web site: http://www.memsrus.com/nc-mumps.html
Section 4: Foundry Design Kits Version 2010
Coventor, Inc. March 19, 2010 U4-21
M



4.5: Tronics 60m SOI-HARM Process
4.5.1: Basic Process Description
Tronics Microsystems, the French manufacturer of custom and semi-custom MEMS components, offers one of its
Thick SOI micromachining technologies as a standard technology.
This technology is proposed on a low-cost Multi-Project Wafer service (MEMSOI) for prototyping purposes. Once
the customer's concept is proven, the process can be customized to meet the customer's most stringent requirements.
Thicker layers are available, and additional features can be added, such as vertical electrodes in the cap, metallization,
connections to the bulk, and specific packaging.
Figure D4-23 SOI-HARM with Hermetic Package
Figure D4-24 Example Picture of Fabricated Devices
This thick SOI surface micromachining technology allows the realization of
capacitive accelerometers and gyrometers
in-plane electrostatic actuators
high Q factor resonators
capacitive and electrostatic structures
The full version of the Tronics SOI-HARM process provided with CoventorWare is password protected; it cannot
be opened without the password. To obtain the password, contact Tronics directly; see the contact information page
U4-23.
The simplified version of the Tronics SOI-HARM process is not password protected and is also provided with
CoventorWare.
Copyright 2002-2005 Tronics Microsystems SA
Section 4: Foundry Design Kits Version 2010
U4-22 March 19, 2010 Coventor, Inc.
References
http://www.tronics.eu/tech/mems_soi.html
4.5.2: Implementation and Process Files
The following CoventorWare-compatible files are available for design with the Tronics EpiSOI process:
a password-protected process file in the Process Librarys Foundry Processes folder
(Tronics_MEMSOI_60_HARM.proc)
a simplified process file (Tronics_MEMSOI_60_HARM_simple, which is not password protected.
a material properties database (MPD) file (Tronics.mpd, located in \\Design_Files\Shared\MPD)
a layout template file (Tronics_MEMSOI_60_HARM.cat, located in \\Design_Files\Shared\
Layout_Templates)
a design rule runset file (Tronics_MEMSOI_60_HARM_runsetDRC.rs, located in \\Coventor-
Ware\apps\Foundry). This file includes Tronics design rules and can be executed from Tools > Layout
Checks > Batch Rule Check > Run Checks. See page D3-96 for more details.
The simplified process file neglects certain process details and primarily generates the active device layer, which is
the crystal silicon SOI device layer. The associated 3-D solid model is usually sufficient to run most simulations. This
process variant is recommended for simulations with ARCHITECT.
The complete, password-protected file is more realistic and includes all process steps, as well as the wafer encapsula-
tion sequence. The password can be directly obtained from Tronics Microsystems (see below for contact informa-
tion).
Figure D4-25 shows a ARCHITECT schematic of an accelerometer that includes a suspended seismic mass and
comb-drive electrodes (left), the extracted layout (top right) and 3-D solid model (bottom right) of the mechanical
core-structure of the device generated using the Tronics process.
Figure D4-25 Example of Device Design with Tronics Process
Section 4: Foundry Design Kits Version 2010
Coventor, Inc. March 19, 2010 U4-23
M



4.5.3: Contact Information
For more information, including the process password and design hand books, contact Tronics directly:
Tronics Microsystems S.A.
55 rue du Pr de l'Horme
38926 CROLLES Cedex
FRANCE
Telephone: +33 (0)4 76 97 29 50
Fax: +33 (0)4 76 97 29 51
E-mail: [email protected]
Web site: http://www.tronics.eu/tech/mems_soi.html
Section 4: Foundry Design Kits Version 2010
U4-24 March 19, 2010 Coventor, Inc.
4.6: SINTEF MoveMEMS PZT
In addition to the established MPW processes at SensoNor and Tronics, a third MicroBUILDER module is also avail-
able and is devoted to SINTEF's PZT add-on technology. The process is called SINTEF MoveMEMS PZT.
4.6.1: Implementation and Process Files
The following CoventorWare-compatible files are available for the user to design with the SINTEF process:
a material properties database (MPD) file (SINTEF.mpd)
a process accessed from the Process Librarys Foundry Processes folder
(SINTEF_MoveMEMS_PZT_v0.proc)
a layout template file (SINTEF_MoveMEMS_PZT.cat)
While some of the material data can be taken from literature, several parameters, such as the built-in mechanical
stress in each layer and the piezoelectric coefficients of the PZT layer, are very process specific and need to be deter-
mined experimentally. Modeling can be used to extract and validate these parameters. The layout template file can be
generated automatically from the process emulation file, which includes all necessary mask layers.
The SINTEF process as it appears in CoventorWare is shown below:
Section 4: Foundry Design Kits Version 2010
Coventor, Inc. March 19, 2010 U4-25
M



The material properties for CSD_PZT are shown below:
4.6.2: 3-D Modeling and Simulation
The three design kit files contain the necessary process-related information to build 3-D models and perform simula-
tions. These simulations can be carried out either using a bottom-up design flow or a top-down design flow. In the
bottom-up design flow, the user creates a layout and then constructs a 3-D model (see picture below), which can be
used for finite element analysis.
Section 4: Foundry Design Kits Version 2010
U4-26 March 19, 2010 Coventor, Inc.
Figure D4-26 Cross-Section of Piezoelectric Cantilever Designed with MoveMEMS PZT
With top-down design flow, the user creates the model using parametric library elements (Coventor's Architect tool).
Specific elements for piezoelectric modeling are available, and the process constraints are automatically set in the
MoveMEMS PZT design kit files. One example is the electromechanical beam with PZE component, which is a spe-
cialized beam that is used to add voltage-dependent piezoelectric stress to a single beam layer. The beam has two
mechanical interfaces describing the motion and rotation of the two beam ends and two electrical pins, Vt and Vb. The
two electrical pins define the electrical potential on the top and bottom of the piezoelectric beam layer. See page A5-
37 of the Architect Reference for more details on this component. A similar component was developed for flexible
plates; see page A5-109 for more details. For all library components, the needed material properties (piezoelectric
coefficient, electrical conductance, permittivity, etc.) are automatically extracted from the corresponding settings in
the Material Properties Database.
Figure D4-27 Architect PZE Components
Since the CoventorWare 2010 release, a 3-D model of the schematic elements can be directly generated in Architect
(see Figure D4-28), and the simulation results can also be visualized in 3-D. In addition, the 3-D model can be
directly imported to CoventorWare ANALYZER to perform FEM analysis (see pictures below).
Section 4: Foundry Design Kits Version 2010
Coventor, Inc. March 19, 2010 U4-27
M



Figure D4-28 Schematic and 3-D Model That Use SINTEF Process
Section 4: Foundry Design Kits Version 2010
U4-28 March 19, 2010 Coventor, Inc.
Figure D4-29 Flexible PZT Plate Model Simulation for Static Deflection
Figure D4-30 Solid Model Extracted and Meshed in Preprocessor
Section 4: Foundry Design Kits Version 2010
Coventor, Inc. March 19, 2010 U4-29
M



Figure D4-31 MemMech FEM Displacement Results
4.7: IMEPKU - Beijing University Polysilicon Process
4.7.1: Basic Process Description
The IMEPKU process is a two-level polysilicon process. Six layers of materials are available to fabricate MEMS
structures and five masks are required.
4.7.2: Implementation and Process Files
The following CoventorWare-compatible files are available for the user to design into IMEPKU process:
a process accessed from the Process Librarys Foundry Processes folder (IMEPKU)
a layout template file (IMEPKU.cat)
The IMEPKU process as it appears in the Process Editor is shown below:
Metal
Polysilicon
Si substrate
PSG
SiN
SiO2
Section 4: Foundry Design Kits Version 2010
U4-30 March 19, 2010 Coventor, Inc.
Figure D4-32 shows a sample device built with the IMEPKU process. The figure on the right shows a SEM of the
device. The figure on the left shows a model built in CoventorWare.
Figure D4-32 Sample Device that uses the IMEPKU Process
4.7.3: Contact Information
For more details about the process, such as design rules and detailed process description, contact the Department of
Microelectronics at Beijing University:
Dr. Zhihong Li
Email: [email protected]
Phone: +86-10-62752536
Web site: http://ime.pku.edu.cn/html/micro_nano.htm
Section 5: Glossary Version 2010
Coventor, Inc. March 18, 2010 U5-1
M



Section 5: Glossary
ABAQUS - a commercial mechanical Finite Element analysis package compatible with CoventorWare.
ambient temperature - temperature of the environment in which a strain measurement is being made.
artifacts - unwanted shapes or other information from previous steps that do not clear out after some Layout Editor
operations. Clicking on the Refresh icon will remove these artifacts and restore the display to its correct view.
beam element - an element type defined by two nodes.
BEM - boundary element method. This alternative to the finite element method is a numerical technique that reduces
computation time by confining solution dependencies to boundary values.
bimetal strip - a MEMS device that consists of a sandwich of two different metals with different temperature
coefficients of expansion.
brick - a term used to describe a volume element of a modeled part. A brick is a hexahedral element that has a
Manhattan geometry (right-angle corners and opposite faces are parallel).
boundary conditions - stimulus applied to model to set input conditions for a model solution. Boundary conditions
can include applied voltages and charges, mechanical loads and constraints, residual stresses, etc.
bounding box - an outside border which surrounds a selected object. The border is always rectangular, even if the
shape is a curve or an irregular polygon. It the same as an extent.
Calma Stream format - equivalent to GDS format; an old term used to define files created from Calma workstations.
The Calma format became an industry standard.
cantilever - a beam structure with one fixed and one free end.
CIF - Caltech Intermediate Format. This is another industry standard file exchange format.
clear field - equivalent to a positive tone or + polarity mask. It indicates locations on the 2-D drawing where objects
are to be preserved; the area not under the clear field is etched away; also known as a light field.
clip layer - a special layer used to bound a portion of a 2-D drawing. When the layer is enabled during the Build
Model step, only the part of the design within the clip layer polygon is rendered as a 3-D model.
conformal - one of a number of deposition techniques supported in CoventorWare. A conformal deposit conforms to
the semiconductor surface, forming a coating that follow contours and irregularities due to previous process steps.
contact surface - a specific surface setting in CoventorWare; another surface contacting it will not penetrate through
its plane. The setting is part of the MemMech boundary condition setup.
Section 5: Glossary Version 2010
U5-2 March 18, 2010 Coventor, Inc.
convection - the transfer of heat from one place to another by the actual motion of material. The material is usually
air or water.
convection coefficient - a constant (h) used in the calculation of heat transfer. It can be solved for indirectly by
specifying ambient flow.
Coriolis acceleration - tangential acceleration associated with a body moving radially through a rotating system
while revolving with the system.
coupled solver - a CoventorWare tool that combines the effects of electrostatic and mechanical computations. Other
coupled combinations exist within individual solver modules and in sequenced solver runs.
dark field - equivalent to a negative tone or - polarity mask; it indicates locations on the 2-D drawing where objects
are to be etched away. As an example, simple small rectangles used to build holes in oxide layers are usually created
on dark field masks, with only the area under the rectangles etched away during processing.
deformation - the distortion of a mechanical device as a result of applied or electrostatic force. The MemMech solver
computes deformation and displays it in tabular and visual form.
delete layer - a process layer used to hold a movable layer in place during manufacturing. This layer is etched away
when the process is complete to allow free movement of the constrained fabricated device.
deposit - to add material during processing. Several types of deposition techniques may be used, and materials
deposited may be used for devices, for mechanical strength, for insulation, or for other purposes.
Designer - a CoventorWare module that contains all the functionality needed to create a MEMS design. It is also a
stand-alone product. It includes the Process Editor, the MPD editor, the 2-D Layout Editor, and the solid model
builder. Meshing capabilities are an optional feature in the stand-alone product. All these functions are incorporated
in CoventorWare.
Devices directory - a subdirectory of the project directory that is the default directory for process and layout files. It
also has the Extra subdirectory that contains interim .sat files.
dimple -a protrusion created by partially etching into a sacrificial layer, then filling up with a subsequent structural
layer deposition via a micromachining process. Dimples are usually used to minimize stiction between two structural
layers.
discrete model - a model composed solely of mesh entities; it has no solid model associated with it. These models are
usually created from imported meshes or from meshes that have been merged.
displacement - movement or deflection of a material due to a mechanical or electrostatic force. The MemMech
solver computes displacement of movable materials.
DXF - Drawing Exchange Format. This is an ASCII text file format used by CAD programs as a complete
representation of a design. The 2-D Layout Editor accepts files in this format.
edge - a line or curve that connects two vertices.
Section 5: Glossary Version 2010
Coventor, Inc. March 18, 2010 U5-3
M



element - a volume that is defined by a connected set of element edges.
element edge - a line that connects two mesh nodes
element face - a planar surface that is defined by a connected set of element edges.
element order - an element property that indicates the order of the polynomial that will be used to represent the
unknown fields during an analysis. CoventorWare supports linear and parabolic element orders.
element type - an element property that describes the shape of the element.
electromechanical solution - results of computations performed by the CoSolveEM solver, which couples electrostatic
and mechanical solutions. The results can be displayed in tabular matrix format, or viewed with the Visualizer.
electrostatic solution - results of computations performed by the MemElectro solver. The results can be displayed in
tabular matrix format, or viewed with the Visualizer in 3-D color.
entity - a generic term for any component of a solid model or a mesh. For example, vertices, edges, faces, parts, and
elements are entities.
etch - to remove previously deposited material during processing. An etch step, defined by a mask, creates a surface,
device, or other entity.
Euler colums - test structures used to determine the critical buckling length for the residual strain in a structural
layer.
extent - an outside border which surrounds a selected object. The border is always rectangular, even if the shape is a
curve or an irregular polygon. It the same as a bounding box.
Extra directory - a sub-directory of the Devices directory within each project directory. It contains intermediate files
produced by the solid model and meshing tools, such as 2-D and 3-D IGES files.
extrude - to create a three-dimensional volume from a two-dimensional surface by extending in the Z direction.
face - a surface that is defined by a closed set of edges. For example, a cube has six faces. Mesh faces can be part of a
common patch when they are in the same plane; for non-rectangular planes the faces must meet software angle
requirements.
FEM - finite element method. A finite element model stores the computation nodes required by the MemMech solver
to compute a 3-D mechanical solution using numerical techniques.
film convection - a thermal analysis of air flow over a surface or volume of a part, dealing with the thermal
characteristics of the skin or film of the model.
flatten - remove all hierarchy from a design so all cells are at the same top level.
Section 5: Glossary Version 2010
U5-4 March 18, 2010 Coventor, Inc.
foundry - a semiconductor manufacturing facility that can produce prototype or production devices in silicon.
Designer can export databases in formats compatible with the foundrys mask and fabrication operations.
ground plane - a surface area used as a reference for measuring initial voltage or charge on a nearby part. Ground is
usually modeled as part of the software process, and can accumulate charge or become a contact surface when a
nearby movable part is displaced.
Guckel Ring - a stress measurement structure used to determine tensile film stress.
harmonic analysis - the ability to apply a frequency-dependent harmonic excitation to a MEMS component and
observe the structure response.
hexahedral element - an element type with eight element faces.
hysteresis - a characteristic exhibited by a MEMS device that results in two different responses to the same input. A
beam exhibits hysteresis if a voltage ramp causes a different electromechanical response when the voltage is ramped
up or down.
I-deas - third-party tool owned by UGS. I-deas can be used for meshing and finite element creation for 3-D devices.
The I-deas unv file can be imported into CoventorWares database as a discrete model.
IGES - Initial Graphics Exchange Specification.
layer - a collection of one or more parts that results from one or more identifiable steps in the fabrication process. All
of the parts in a layer are made out of the same material
light field - equivalent to a positive tone or + polarity mask; it indicates locations on the 2-D drawing where objects
are to be retained. As an example, polygons and other shapes created for structural polysilicon layers are usually
created on light field masks, with all but the area under the shapes etched away during processing. Also known as
clear field.
link - a special feature of CoventorWare that allows different modeled parts to be joined together. The separate parts
can be simulated as a whole, or transformed independently in the Simulation Manager.
Manhattan geometry - all angles between the model faces are at 90 degree angles.
mask tone - opaque material on a mask designated to isolate or etch during processing. A positive tone mask resists
etching in the dark area of the mask, while a negative or reverse tone mask allows etching in the opaque area.
meshing - a process that breaks a 3-D model into finite 3-D representations for finite element analysis. Meshes are
used for both MemElectro and MemMech, and can be applied to surfaces and volumes.
modal analysis - an analysis mode of CoventorWare that allows a parts natural frequencies of vibration to be
simulated. The modal analysis solver can compute any number of modes as input by the user.
moment - the product of the magnitude of a force and its force arm. Also known as torque.
Section 5: Glossary Version 2010
Coventor, Inc. March 18, 2010 U5-5
M



MPD - an acronym for Material Properties Database. This file stores names of common materials used in processing
and simulation, along with the mechanical, electrical, thermal, and fluidic properties of those materials.
node - a point in three-dimensional space associated with a mesh. All other mesh entities, namely element edges,
element faces, and elements can be defined by a set of nodes. The order of the nodes in the set determines the
orientation of each mesh entity.
normal vector - a unit length vector perpendicular to the surface of an object and pointing inward. CoventorWare
uses the normal vector convention to display information about object orientation. A normal vector of (0,0,-1)
describes the top face of a volume.
OGL -2-D and 3-D graphics application providing functions such as modeling, transformations, color, lighting, and
smooth shading; is integrated with CoventorWare.
orthogonal - having lines that are at right angles, being perpendicular to each other, as opposed to having lines that
meet at angles other than 90 degrees.
partition - creation of two or more volumes through a part. Each volume can then be meshed independently. In
I-deas, partitions are created by drawing surface lines, and then extending them through the model thickness.
parametric model - a model with a few degrees of freedom that is based on analytical or semi-analytical formulas
describing the behavior of the model through one or more adjustable parameters. Coventors application-specific
libraries for electromechanics, optics, and RF devices contain parametric models.
part - a volume that is defined by a closed set of faces and is made of one material.
patch - a CoventorWare defined entity that consists of two or more faces of a meshed model. Mesh faces can be part
of a common patch when they are in the same plane; for non-rectangular planes the faces must meet software angle
requirements.
PATRAN - neutral file format for a meshed model. This format is similar to the universal file format used from
I-deas output and can be accepted by CoventorWare.
perturbation - response of a device to a small change in boundary conditions. In the Parametric Study tool, a
perturbation appears when a sensitivity analysis is set.
pitch - the distance between repeating elements in a design. In the Layout Editor, the pitch can be smaller than the
bounding box extent of the repeating object.
planar - one of a number of deposition techniques supported in CoventorWare. A planar deposit fills in any uneven
areas, and adds additional material to the surface to create a uniform flat deposition over the entire surface.
Poissons ratio - The ratio of transverse strain to axial strain during axial load, or the negative ratio of lateral strain to
axial strain.
pressure sensor - a MEMS device that can sense applied force in the form of a pressure or fluid load, and which
changes its capacitive or stress characteristics in proportion to this load.
Section 5: Glossary Version 2010
U5-6 March 18, 2010 Coventor, Inc.
principal stress - the maximum and minimum normal stresses in a plane, always perpendicular to each other and
oriented in directions for which the shear stresses are zero.
PSG - phosphosilicate glass; a deposited oxide step used in a foundry process. For MEMS devices, the PSG layers
are often used as sacrificial layers and removed after fabrication to create freedom of movement for mechanical
devices.
pull-in - the point at which the growth of an electrostatic force becomes dominant over the linearly increasing
mechanical restoring force, causing a MEMS device to quickly snap, or pull in, to the ground plane. The quantity is
commonly expressed as a voltage.
queries - CoventorWare feature that extracts or computes data based on the mbif file results. A variety of parameters,
chosen for patches, regions, or volumes, can be analyzed in table or graph form.
radius -setting using in link boundary condition setup; determines the degree of coupling between joined faces of
independent part types.
relaxation algorithm - an algorithmic method choice for use with the CoSolveEM solver. The relaxation technique
allows the solution to converge simply and quickly.
reaction force - force opposite to an applied force; in CoventorWare, develops at the fixed points of a model when a
pressure load is exerted.
reduced-order model - A model with few degrees of freedom, typically 10 or less, that has been extracted from a set
of numerical equations with many degrees of freedom. A model generated with the a macromodeling module is a
reduced-order model. The term macromodel is synonymous with reduced-order model.
release - the point at which the growth of an electrostatic force exactly balances the spring force of a pulled-in
MEMS device. The quantity is commonly expressed as a voltage.
residual stress - internal stress of a material before external forces are applied. Changes in residual stress can affect
mechanical displacement of a material.
sacrificial layer - a process layer used to hold a movable layer in place during manufacturing. This layer is etched
away when the process is complete to allow free movement of the constrained fabricated device. The name delete
layer also is used within the software dialogs and in this documentation.
sensitivity analysis - a Parametric Study feature that adjusts one parameter by a positive and negative percentage
while running a full trajectory variation for another parameter. The results can be analyzed in graph form to determine
performance changes due to manufacturing or environment shifts.
settings - a mps file that stores the current file paths and set boundary conditions that are entered or displayed in the
CoventorWare GUI. These files are stored in the project directory, and there may be several settings files associated
with each project.
shell element - an element type that has one element face; can be further categorized as triangular or quadrilateral.
Shell elements are created on the surface of a part.
Section 5: Glossary Version 2010
Coventor, Inc. March 18, 2010 U5-7
M



solid modeling - modeling based on solid geometry instead of wireframes or surfaces. A solid model contains
enough information to fully describe the boundaries, surfaces, and topology of a part.
stacked - one of a number of deposition techniques supported in CoventorWare. A stacked deposit is a rigid
deposition that lays on top of any surface irregularities without filling in gaps and holes.
stiction - the phenomenon of unintended adhesion of released mechanical elements to the substrate. This occurs
when surface tension during drying of a wet release etch causes beams to make contact with the substrate.
surface mesh - a mesh that discretizes only the faces of the solid model.
system model - a network of parametric and/or reduced-order models that collectively represent the behavior of a
device. An Architect schematic is a graphical representation of the system model.
TCE - temperature coefficient of expansion. This material property must be defined for thermal analysis.
Tcl/Tk - Tool Command Language/Tool Kit; a scripting language used as the user interface language for
CoventorWares Layout Editor. Tk is the graphical interface development tool.
temp - the preferred directory designation used to store all system files generated during a software session.
tether - a projection from the body of a model, usually used to anchor the body to another surface or part.
tetrahedral element - an element that has four element faces. Linear tetrahedral elements have four nodes; parabolic
tetrahedral elements have ten nodes.
tie - a special feature available in MemMech that allows modeled parts to be joined.
trajectory - a set of input numbers used as values or factors by the Parametric Study function. By specifying a
trajectory, users can create a set of output results that can be graphed or visualized.
vertex - a point in three-dimensional space; defined by the intersection of model edges.
via - an etch technique that removes insulating material between two similar layers, providing a hole that allows the
two layers to touch. It is often used to connect two conducting metallization layers in selected locations, where the top
layer of deposited metal flows through the hole and connects to the previously deposited metal underneath.
Visualizer - a CoventorWare tool that allows viewing of 3-D models; results from any of the solvers may be viewed.
The Visualizer supports color mapping of charge and stress, allows viewing of both surface and interior stresses, and
includes an animation module that captures and plays back desired 3-D views.
volume - the interior of a three-dimensional object; the term can be used to designate the type of mesh to be
performed, or is an equivalent term for part in CoventorWare nomenclature.
Youngs modulus - also known as elastic modulus; a measure of material strength. It is the ratio of axial stress to
normal strain.
Section 5: Glossary Version 2010
U5-8 March 18, 2010 Coventor, Inc.
work directory - the root directory that contains all project directories. It is also the default directory for the shared,
temp, log, and tutorial directories.
x3d - extensible 3-D graphics application integrated with XML; integrated with CoventorWare.
Index Version 2010
Coventor, Inc. March 18, 2010 IX1
A
ABAQUS
environment variable setup U1-48
external user requirements U1-48
versions supported U1-48
Analyzer solvers
access U1-15
Analyzer tab U1-18
anodic glass wafer bonding U3-34
Architect
file location U1-41
general description U1-3
importing models into Layout Editor U1-17
tab in Function Manager U1-14
autosave
in Process Editor U3-40
B
basic MEMS process U3-44
batch
how to run U1-29
C
compute time limitations U1-43
conductivity law U2-12
conductors
designation U2-13
conformal deposit U3-43, U3-48, U3-49
conventions
design coordinates U1-8
design units U1-9
CoSolveEM
OneStep U1-45
cpdb files U1-35
creating a 2-D layout
using Architect U1-16
D
Database Browser
description U1-24
database files U1-35
compacting to save space U1-36
decimal separator U1-10
defragmenting U1-36
deposit
basics U3-42
conformal deposit after release U3-44
front or back side U3-43
setting the thickness U3-5, U3-10
snowfall U3-11
surface conformality factor U3-11
types U3-5
design complexity
and compute time U1-43
and mesh structure U1-43
design flow U1-46
design units U1-9
Designer
general description U1-3
tab in Function Manager U1-15
devices directory
file storage path U1-37
dielectric
constant U2-13
material U2-13
directory
CoventorWare structure U1-40
tutorials U1-41
disk space
managing U1-36
documentation
conventions U1-6
on-line help U1-7
page numbering convention U1-7
Saber U1-21
Tecplot U1-21
Visualizer U1-21
dopant concentration
effect on electrical conductivity U2-11
Index
Index Version 2010
IX2 March 18, 2010 Coventor, Inc.
DRIE U3-28
E
elastic constants
as a material property U2-5
electrical conductivity
as a material property U2-11
computing from resistivity U1-10
defined as temperature dependent U2-11
dopant-concentration dependent U2-11
electroplating U3-32
etch
anisotropic wet U3-26
basics U3-42
conventions U3-50
depth settings U3-17
front or back side U3-43
generic dry U3-28
generic wet U3-28
global topology U3-18
local topology U3-18
offset U3-21, U3-52
parameters in Process Editor U3-17
release dry U3-28
release wet U3-28
sidewall angle U3-20
etch sign conventions U3-50
evaporation U3-29
export
files for third-party software U1-38
material properties U1-27
F
file
batch simulation U1-29
import U1-27
mpd export U1-27
files
file buttons U1-34
file format U1-39
file locations in CoventorWare U1-39
layout U1-37
naming restrictions U1-39
organization U1-40
temporary files U1-38
tutorials U1-41
FLEXnet U1-10
format
files U1-39
Foundry Processes
IMPEKU U4-29
INTEGRAMplus DPK U4-5
INTEGRAMplus MPK U4-7
INTEGRAMplus PPK U4-10
MEMSCAP MetalMUMPS U4-19
MEMSCAP PolyMUMPS U4-15
MEMSCAP SOIMUMPS U4-17
SensoNor MultiMEMS U4-12
TRONICS U4-21
foundry steps
set default U3-41
front-end design U1-42
Function Manager
File menu commands U1-23
overview U1-11
G
gbak files U1-35
global topology U3-18
H
help
on-line U1-7
I
icons
as a document convention U1-6
in Database Browser U1-24
IMPEKU process U4-29
import
material properties U2-3
third-party files U1-27
INTEGRAMplus processes U4-5 U4-11
DPK U4-5
MPK U4-7
PPK U4-10
Index Version 2010
Coventor, Inc. March 18, 2010 IX3
ion implantation U3-30
iteration
in CoventorWare U1-46
J
Job Queue U1-20
K
keyword block U2-21
conductivity U2-22
damping U2-22
dielectric U2-22
elastic U2-23
electrical conductivity U2-24
expansion U2-24
joule heat fraction U2-25
piezoelectric U2-25
specific heat U2-26
L
layout
general considerations U1-42
Layout Editor
access U1-15
file location U1-37
layout considerations U1-42
opening files U1-16
layout extraction from Architect U1-16
licensing U1-10
lift-off U3-34
LIGA U3-33
limitations
accuracy U1-44
compute time U1-43
model complexity U1-43
limited diffusion model U2-11
local topology U3-18
logs
files U1-21
files used by CoventorWare U1-38
window U1-21
LPCVD U3-30
M
mask
dark field U3-43
light field U3-43
negative-tone U3-43
offsetting U3-21, U3-52
oversize U3-47
positive-tone U3-43
undersize U3-47
material
name restriction U2-3
material properties U2-4
access from Function Manager U1-11
adding a new material to database U2-1
computing electrical conductivity U1-10
database location U1-37
elastic constants U2-5
electrical conductivity U2-11
export U1-27
importing U2-3
piezoresistive coefficients U2-18
specific heat U2-10
storage U1-2
TCE
MemMech U2-9
TCE for fluidics U2-10
thermal conductivity U2-10
types U2-4
viscosity U2-18
Material Properties Database U3-46
piezoelectric material assignment U2-13
Poly-T values U2-21
Table-T values U2-21
material property
silicon U2-7
mbif
as a result file U1-26, U1-36
MemMech
external solver considerations U1-48
TCE material property U2-9
MemPZR
piezoresistive coefficients U2-18
MEMSCAP MUMPs processes U4-15 U4-20
MetalMUMPS U4-19
PolyMUMPS U4-15
SOIMUMPS U4-17
Index Version 2010
IX4 March 18, 2010 Coventor, Inc.
Menus
Process Editor U3-37
Edit U3-38
File U3-37
Properties U3-38
Help U3-41
Right Click Menus U3-41
Tools U3-40
Foundry Folder U3-41
Process Library U3-40
Save U3-40
View U3-39
Window U3-41
mesh generators
access U1-20
Mesh tool
materials U2-13
mesh transform tool
in a parametric study U1-45
meshing
reducing simulation time U1-45
Modeling Steps
Delete Parameters U3-25
deposits U3-5
Partition U3-13
Round Corners U3-15
statistical properties U3-21
Straight Cut U3-17
MPD
see material properties
MPD Editor
access to U2-2
N
names
restrictions for materials U2-3
netlist
in Function Manager window U1-16
numerical display in interface U1-10
O
offsetting a mask U3-21, U3-52
OneStep
in CoSolve U1-45
overview
main user menu U1-11
system flow U1-1
P
Parametric Study
mesh transform tool U1-45
PATRAN file
import U1-27
PECVD, generic U3-29
photoresist
effect on geometry U3-50
piezoelectric analysis
material assignments U2-13
piezoelectric coefficients U2-15
piezoresistive coefficients
as a material property U2-18
piezoresistors
material properties U2-7
planar deposit U3-43
Poissons ratio
how to compute U2-8
polarity U3-43, U3-50
Poly-T material property U2-21
process
access from Function Manager U1-12
conformal deposit U3-43
general considerations U1-42
offset U3-47
oversize and undersize U3-47
planar deposit U3-43
sequence U3-46
sketch of basic steps U3-44
stacked deposit U3-43
process directory
file storage path U1-37
Process Editor
AutoSave function U3-40
Foundry Folder U3-41
Foundry Processes U3-37
global topology U3-18
Help U3-41
local topology U3-18
menus U3-37
Modeling Steps U3-4 U3-25
Index Version 2010
Coventor, Inc. March 18, 2010 IX5
Process Description U3-2
Process Library U3-1, U3-40
right click menus U3-41
sacrifice layer U3-49
Step Parameters U3-3
substrate step U3-3
User-Defined Steps U3-25 U3-37
window U3-46
Process Library
set default U3-40
productivity
enhancement U1-44
project directory
file storage path U1-35, U1-41
projects
managing and selecting U1-23
properties
material U1-2
R
resistivity U2-18
using to compute electrical conductivity U1-10
S
Saber
access in Function Manager U1-14
documentation U1-21
file location U1-41
function within CoventorWare U1-3
sacrifice
see delete
SensoNor MultiMEMS process U4-12
sidewall angle U3-20
Silicon
100 wafers U2-7
110 Wafers U2-8
111 Wafers U2-8
silicon
material properties U2-7
silicon fusion bonding U3-36
simulation execution
batch U1-29
snowfall deposit
how to model U3-11
SOI U3-30
solid model
Function Manager options U1-17
solver access U1-18
solver workspace
temp files U1-38
specific heat
as a material property U2-10
spin casting U3-30
sputtering U3-29
stacked deposit U3-43
statistical properties
normal U3-21
piecewise linear U3-23
uniform U3-22
Stereolithography file
import U1-27
storing CoventorWare files
devices directory U1-37
mpd directory U1-37
process directory U1-37
project directory U1-35, U1-41
stripping U3-29
substrate step U3-3
surface conformality factor U3-11
T
Table-T material property U2-21
TCE
fluidics U2-10
zero stress temperature U2-9
temp files
used by solvers U1-38
temperature
effect on electrical conductivity U2-11
thermal conductivity
as a material property U2-10
thermal expansion coefficient
Index Version 2010
IX6 March 18, 2010 Coventor, Inc.
fluidics U2-10
MemMech U2-9
thermal oxidation U3-29
thermomechanical analysis
default zero stress temperature U2-9
TRONICS foundry process U4-21
tutorials U1-41
access to files U1-23
import tutorial projects U1-23
importing files U1-23
U
units for Coventor software parameters U1-9
universal file
import U1-27
user interface
entering numbers U1-10
User Settings dialog U1-20
User-Defined Steps U3-25
anisotropic wet etch U3-26
anodic glass wafer bonding U3-34
DRIE U3-28
electroplating U3-32
evaporation U3-29
generic dry etch U3-28
generic PECVD U3-29
generic wet etch U3-28
ion implantation surface U3-30
lift-off U3-34
LIGA U3-33
LPCVD U3-30
release etch U3-28
silicon fusion bonding U3-36
SOI U3-30
spin casting U3-30
sputtering U3-29
stripping U3-29
thermal oxidation U3-29
V
viscosity
as a material property U2-18
Visualizer
documentation U1-21
Y
Youngs modulus
how to compute U2-8
Z
zero stress temperature U2-9
Version 2010
IX-2 March 19, 2010 Coventor, Inc.