Sri Vasavi Engineering College (Autonomous), Pedatadepalli
III - SEMESTER
Course : Electronic Devices And Circuits
L T P C Code : V18ECT01
31-4
Course Outcomes: After Successful completion of this course, the students will
be able to
1. Explain the basic concepts of semiconductor physics and explain the
formation of p-n Junction. 2. Discuss special semiconductor diodes. 3. Construct and
working principle of rectifiers with and without filters with
relevant expressions and necessary comparisons 4. Understand the construction,
principle of operation of transistors, BJT
and FET with their V-I characteristics in different configurations. 5. Explain the need of
transistor biasing, various biasing techniques for BJT
and FET and stabilization concepts with necessary expressions. 6. Analyze small signal
low frequency transistor amplifier circuits using BJT
and FET in different configurations.
Syllabus:
UNIT-I:Semi Conductor Physics & Junction diode characteristics: Review of
semiconductor physics, continuity equation, law of junction, p-n junction diode, current
components in PN junction Diode, derivation of diode equation, V-I Characteristics,
Diode resistance, Diode capacitance, energy band diagram of PN junction Diode.
UNIT- II: Special Semiconductor Diodes: Zener Diode, Breakdown mechanisms,
Zener diode applications, LED, LCD, LDR, Photo diode, Photo transistor, Varactor
diode, Tunnel Diode, DIAC, TRIAC, SCR, UJT, Construction, operation and
characteristics of all the diodes are required to be considered.
UNIT- III: Rectifiers and Filters: Basic Rectifier setup, half wave rectifier, full wave
rectifier, bridge rectifier, derivations of characteristics of rectifiers, rectifier circuits-
operation, input and output waveforms, Filters, Inductor filter, Capacitor filter, L-section
filter, π-section filter multiple L section and π-section filter, derivation for ripple factor in
each case.
UNIT- IV: Transistor Characteristics: BJT: Junction transistor, transistor current
components, transistor equation, transistor configurations, transistor as an amplifier,
characteristics of transistor in Common Base, Common Emitter and Common Collector
configurations, punch through/ reach through, typical transistor junction voltage values.
FET: FET types, construction, operation, characteristics, parameters, MOSFET- types,
construction, operation, characteristics, comparison between JFET and MOSFET.
UNIT- V: Transistor Biasing and Thermal Stabilization: Need for biasing, operating
point, load line analysis, BJT biasing- methods, basic stability, fixed bias, collector to
base bias, self bias, Stabilization against variations in VBE, Ic, and β, Stability factors,
(S, S', S'‟ ), Bias compensation, Thermal runaway, Thermal stability. FET Biasing.
UNIT- VI: Small Signal Low Frequency Transistor Amplifier Models: BJT: Two port
network, Transistor hybrid model, determination of h- parameters, conversion of h-
parameters, Generalized analysis of transistor amplifier model using h-parameters,
Analysis of CB, CE and CC amplifiers using exact and approximate analysis,Comparison
of transistor amplifiers.Generalized
analysis of FET amplifier small signal model, analysis of CS amplifier.
Text Books: 1. Electronic Devices and Circuits- J. Millman, C. Halkias, Tata Mc-Graw
Hill, Second Edition. 2. Integrated Electronics- Jacob Millman, C. Halkies, C.D.Parikh,
Tata Mc-Graw Hill, 2009. 3. Electronic Devices and Circuits – R.L Boylestad and Louis
Nashelsky, Pearson publications
References: 1. Electronic Devices and Circuits-K. Satya Prasad, VGS Book Links. 2.
Electronic Devices and Circuits-Salivahanan, Kumar, Vallavaraj, Tata Mc- Graw Hill,
Second Edition 3. Electronic Devices and Circuits – Bell, Oxford 4. Electronic Devices
and Circuits-A.P Godse,U.A.Bakshi , Technical publications
Sri Vasavi Engineering College (Autonomous),
Pedatadepalli
Sri Vasavi Engineering College (Autonomous),
Pedatadepalli
Sri Vasavi Engineering College (Autonomous), Pedatadepalli
