Assignment (Lab)
FET
(Field Effect Transistor)
Name: Aleena Riaz
ARID no: 22-ARID-2299
Degree: BS Physics
(Semester 6)
Submitted To: Dr.Aftab Farrukh
Introduction
Key Role of
What is a Key Reasons FETs
Transistor in
transistor? Matter in Circuits
A transistor is a Electronics
• Acts as a switch to • High input impedance
small electronic
control the flow of minimizes current draw
device used to
current in circuits. from the source.
amplify or switch
• Functions as an • Low power
electrical
amplifier to increase consumption makes
signals.Transistors
weak electrical them ideal for energy-
are the building
signals. efficient designs.
blocks of modern
• Enables compact and • Fast switching speed
electronic devices
reliable design of suits both analog and
like computers,
modern electronic digital applications.
smartphones, and
amplifiers. devices.
Types Of Transistors
BJT (Bipolar Junction Transistor):
Current-controlled device with three layers
(Emitter, Base, Collector). Used for
amplification and switching.
FET (Field-Effect Transistor):
Voltage-controlled device with three terminals (Source,
Gate, Drain). Basic Symbols
Uses only one type of charge carrier (either electrons or
holes), offering high input impedance and low power
consumption.
Overview of FET Families
JFET (Junction FET):
Gate controls current by reverse-biasing a PN junction.
Simple and robust, used in analog circuits.
MOSFET (Metal-Oxide-Semiconductor FET):
Most common type, ideal for digital electronics. Includes:
🔌 FET Terminals: Structure
Source (S):The terminal through which Of FET
carriers (electrons or holes) enter the
channel.
Gate (G):The terminal that controls the
conductivity of the channel.
Drain (D):The terminal through which
carriers leave the channel.
Substrate (Body):
The semiconductor base on which the FET is
built.Often internally connected to the
Source in discrete devices.
Role of Gate Voltage in
FET:The gate voltage controls the
current flow between the source and
drain by creating an electric field
across the insulating layer (gate oxide). In short:Gate
• When a voltage is applied to the voltage acts like a
Gate, it modifies the conductivity switch that controls
of the channel in the semiconductor. whether the FET is ON
• Without sufficient gate voltage, the or OFF.
Principle of Operation
Electric Field Control:
FET uses the voltage applied to the Gate (G) terminal to create an
electric field, which modulates the conductivity of a semiconductor
channel between Source (S) and Drain (D).
Channel Formation:
A conductive path (channel) forms between Source and Drain. Current
flows through this channel when a voltage is applied.
Depletion Region:
Gate voltage controls the width of the depletion region, which in turn
regulates the effective width of the channel.
More gate voltage ⇒ wider depletion region ⇒ less current (or vice
Aspect
versa). N-Channel FET P-Channel FET
Type of Carriers Electrons (majority) Holes (majority)
Gate Voltage For Negative (for Positive (for
Depletion enhancement) enhancement)
Depletion Region Grows Gate becomes more Gate becomes more
When negative positive
Effect on Channel Narrows electron Narrows hole
JFET (Junction Field Effect Transistor)
⚙️How It Works
Structure • Voltage-Controlled Device: Gate-Source
voltage (V<sub>GS</sub>) controls
current.
• Gate always reverse-biased.
• As |V<sub>GS</sub>| increases,
depletion region widens → channel
narrows → current (I<sub>D</sub>)
decreases.
• Cut-off: At a specific
V<sub>GS(off)</sub>, channel fully
pinched → I<sub>D</sub> ≈ 0.
I-V Characteristics (N-
Channel)Regions:
1. Ohmic: I<sub>D</sub> increases
linearly with V<sub>DS</sub>.
2. Saturation/Active: I<sub>D</sub> ~
constant, controlled by
V<sub>GS</sub>.
3. Cutoff: I<sub>D</sub> ≈ 0 for
Output Characteristics of
JFET
What it shows: Drain current (Iₙ)
versus drain-source voltage (V_DS)
for various fixed gate-source
IV- Characteristics
voltages (V_GS) — curves for V_GS
= 0, –1 V, –2 V, etc.
Key regions:
1. Ohmic (linear) region – near
V_DS ≈ 0, where I_D increases
linearly with V_DS.
2. Knee / Pinch-off point – the
slight bend where the channel
begins to pinch off.
3. Saturation (active) region – I_D
flattens, largely independent of
V_DS; used for amplification.
4. Cut-off (for V_GS ≤ V_GS(off)) –
I_D approaches zero.
Transfer Characteristics of
JFET
What it shows: Drain current (Iₙ)
versus gate-source voltage (V_GS)
while holding V_DS constant in the
saturation region .
Key points:
1. At V_GS = 0 → I_D = I_DSS (max
drain current).
2. As V_GS becomes more negative
→ I_D decreases, following the
Shockley equation:
ID = IDSS × (1 − VGS / VGS(off))²
Type Controlled controlled
MOSFET Introduction (Metal-Oxide-
Semiconductor Field-Effect Transistor)
What is MOSFET?
A MOSFET is a type of Field-Effect Transistor that controls current using an electric field
created by a voltage applied to the insulated gate. It has three terminals: Gate (G), Drain
(D), and Source (S), and features a thin oxide layer between the gate and the channel.
Difference from JFET:
Gate Structure:
MOSFET has an insulated gate (oxide layer), while JFET's gate is directly connected to the
channel via a p-n junction.
Input Impedance:
MOSFET has a very high input impedance, higher than JFET.
Types of MOSFETs:
1. Enhancement Mode MOSFET
• Normally OFF at V<sub>GS</sub> = 0.
• Channel forms only when gate voltage is applied.
• Common in digital circuits (e.g., CMOS).
MOSFET Structure:
Terminals:
Source: Terminal where carriers (electrons or holes) enter the
MOSFET.
Drain: Terminal where carriers exit the MOSFET.
Gate: Controls the flow of current by creating an electric field across
the channel.
N-Channel vs P-Channel:
Feature N-Channel MOSFET P-channel MOSFET
Substrate Type P-Type N-Type
Channel Type Electrons(N-Type) Holes(P-Type)
Gate Voltage(VGS) Positive (turns ON) Negative (turns ON)
Mobility High Electrons Low Holes
ON Resistance Lower Higher
Role of Oxide Layer (SiO₂):
Acts as an insulator between the gate and
channel.Allows gate voltage to control the electric field
without direct current flow.
Structure & Operation:
Similar to the depletion mode (shown), but no
channel exists by default.The substrate is P-type, MOSFET
and N+ regions act as Source (S) and Drain (D).
The Gate (G) is insulated by an SiO₂ dielectric
Working:
(oxide) layer.
• Channel forms only when VGS> Vth (threshold
voltage).
Threshold Voltage Vth:
• Minimum gate-to-source voltage required to
induce a conducting n-type channel.
• For VGS<Vth, the MOSFET remains OFF (no
conduction).
Working:
1. VGS < Vth< → No channel → No current (ID = 0).
2. VGS ≥ Vth → Electrons attracted to gate →
Inversion layer (n-channel) forms → Current flows
from Drain to Source.
MOSFET Characteristics and Applications
1. Output Characteristics
Regions:
Linear (Ohmic): Low , MOSFET behaves like a
variable resistor.
Saturation (Active): High , current is almost
constant.
Key Point: Device acts like a current source in
saturation.
2. Transfer Characteristics
Graph: ID vs VGS at constant.
Threshold Voltage : Minimum needed to
turn on the MOSFET.
Above : Drain current increases rapidly.
3. Application in Switching
OFF state:VGS < VTH → No current
ON state:VGS > VTH → MOSFET conducts
Used in digital logic, power control,
FET vs BJT
Sr.No FET (Field Effect BJT (Bipolar
Transistor) Junction
Transistor)
1 Voltage-controlled device Current-controlled device
2 Uses majority carriers Uses both carrier types
3 Very high input impedance Low input impedance
4 Moderate to high output Low to moderate output
impedance impedance
5 Low power consumption Higher power consumption
6 Better thermal stability Less stable thermally
7 Easy to fabricate in ICs More complex in ICs
8 Used in CMOS, switches Used in amplifiers, oscillators
Applications of FETs
1. Amplifiers – Used in low-noise, high-gain amplifiers such as RF and audio
amplifiers.
2. Switching Circuits – Acts as electronic switches in both digital and analog
circuits.
3. Analog Signal Processing – Employed in mixers, modulators, and
voltage-controlled resistors.
4. Voltage-Controlled Devices – Gate voltage controls output current,
making FETs ideal for such uses.
5. Oscillator Circuits – Used in designing high-frequency oscillator circuits.
6. Buffer/Impedance Matching – High input impedance makes FETs
excellent for buffering signals.
7. Digital Logic Circuits – CMOS technology (based on MOSFETs) is essential
in logic gates and microprocessors.
8. Chopper Circuits – FETs are used for modulation and demodulation in
signal chopping applications.
9. Analog Switches/Multiplexers – Their low ON-resistance and fast
switching make them suitable here.
10. Motor Control Systems – Widely used in power electronic control of
motors and actuators.
Advantages of FETs (Field Effect Transistors):
1. High input impedance – Minimizes loading on preceding
stages.
2. Low power consumption – Ideal for battery-operated devices.
3. Voltage-controlled device – Easier to drive compared to BJTs.
4. Low noise – Suitable for audio and RF applications.
5. Thermal stability – Less affected by temperature variations.
6. Simple fabrication – Useful in IC manufacturing.
Limitations of FETs:
1. Lower gain – Compared to BJTs.
2. Sensitive to static – Can be damaged by
electrostatic discharge.
3. Limited frequency response –
Especially for some types.
4. Complex biasing – Especially in MOSFETs.
⚙️ Core Concepts of FET
Key Point:"FETs
are the building
1. Voltage-Controlled Device blocks of modern
Current flow is controlled by applying voltage to the gate electronics."
terminal.
2. High Input Impedance
Minimizes loading effect on the previous stage in a circuit.
3. Unipolar Operation
Uses either electrons (N-channel) or holes (P-channel), not
both.
4. Channel Formation and Control
Current flows through a semiconductor channel; gate voltage
modulates its width.
5. Types of FETs
Mainly JFET and MOSFET with enhancement and depletion
modes.
6. Low Power Consumption
Suitable for battery-powered and energy-efficient devices.
