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Silicon N-Chinnel Junction FET: LH03 Series of Products Interconvert

This document provides information about the LH03 series of silicon N-channel junction field effect transistors (JFETs) from Xiaosheng Electronic & Telechnology. The JFETs can be used for applications like charge sensors, meter amplifiers, rheostats, choppers, and gain controllers. Key specifications listed include maximum ratings for gate voltages and currents, power dissipation, and junction temperature, as well as typical electrical characteristics like drain-source cutoff current, gate leakage current, and transfer admittance.

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Cristian Rodriguez
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38 views2 pages

Silicon N-Chinnel Junction FET: LH03 Series of Products Interconvert

This document provides information about the LH03 series of silicon N-channel junction field effect transistors (JFETs) from Xiaosheng Electronic & Telechnology. The JFETs can be used for applications like charge sensors, meter amplifiers, rheostats, choppers, and gain controllers. Key specifications listed include maximum ratings for gate voltages and currents, power dissipation, and junction temperature, as well as typical electrical characteristics like drain-source cutoff current, gate leakage current, and transfer admittance.

Uploaded by

Cristian Rodriguez
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as RTF, PDF, TXT or read online on Scribd
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XIAOSHENG

Symbol
:

Silicon Junction FETs

Drain

LH03 Series of Products interconvert:

2SK30A
Gate
www.datasheet4u.com

Source

Silicon N-Chinnel Junction FET


Package example: Application:
For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC , electronic switch.

Absolute Maximum Ratings (Ta=25 )


Parameter Symbol Ratings Unit Gate to Drain voltage V
GSO

Package D S G -50 V V
SC-59 -50 V SOT-23 Gate current I

GDO

Gate to Source voltage 10 mA 250 mW 125 -55 to +125

TO-92S Allowable power dissipation P


D

3 1 2 * TO-92 Junction Temperature T


j

TO-18 Storage Temperature T


stg

Electrical Characteristics (Ta=25 )


P ra me te r Symbol Condi t i on s min typ max Unit Drain to Source cut-off current I V = 10V, V = 0V 0.3 6.5 mA
DSS DS GS GS

Gate to Source leakage current I Gate to Drain voltage V Gate to Source cut-off voltage V Forward transfer admittamce | Y (Common Source) C C

V = -30V, V = 0V
GSS DS

-1.0 nA V

I = -100A , V = 0V -50
GDS G DS

V = 10V, I = 0.1A -0.4 -5.0 V


GS(OFF) DS D

| V = 10V , V = 0V , f = 1KHZ 1.2


fs DS GS

mS

8.2 pF Input capacitance iss , , = 10V V = 0V f = 1MHZ 2.6 pF


DS GS rss

V Reverse transfer capacitance (Common Source)

I Rank Classification
DSS

Runk R O Y GR I (mA) 0.3 to 0.75 0.6 to 1.4 1.2 to 3.0 2.6 to 6.5 Marking Symbol 035D 035E 035F 035G
DSS

Xiaosheng Electronic & Telechnology CO. ,LTD.


Tel: 86-021-64859219 Fax: 86-021-64859219 www.on-ele.org Email: [email protected] Room 206 3rd building 195-16 Tianlin RD. Shanghai China

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