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Silicon N-Chinnel Junction FET

This document provides specifications for silicon N-channel junction field-effect transistors (JFETs) from the LH03 series. It lists the devices' maximum ratings and typical applications. Absolute maximum ratings include allowable gate-to-drain voltage, gate-to-source voltage, and power dissipation. Electrical characteristics are provided for various parameters at 25°C, including drain-to-source cut-off current, gate-to-source leakage current, and input/reverse transfer capacitances. The document also includes packaging diagrams and IDSS rank classifications based on drain-to-source cut-off current.

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Joshuas Takde
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46 views1 page

Silicon N-Chinnel Junction FET

This document provides specifications for silicon N-channel junction field-effect transistors (JFETs) from the LH03 series. It lists the devices' maximum ratings and typical applications. Absolute maximum ratings include allowable gate-to-drain voltage, gate-to-source voltage, and power dissipation. Electrical characteristics are provided for various parameters at 25°C, including drain-to-source cut-off current, gate-to-source leakage current, and input/reverse transfer capacitances. The document also includes packaging diagrams and IDSS rank classifications based on drain-to-source cut-off current.

Uploaded by

Joshuas Takde
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Silicon Junction FETs

XIAOSHENG
Symbol:
Drain

LH03 Series of Products interconvert:

www.datasheet4u.com

2SK30A

Gate
Source

Silicon N-Chinnel Junction FET


Application:
For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC electronic switch.

Package example:

Absolute Maximum Ratings (Ta=25)


Parameter Gate to Drain voltage Gate to Source voltage Gate current Allowable power dissipation Junction Temperature Storage Temperature Symbol VGDO VGSO IG PD Tj Tstg Ratings -50 -50 10 250 125 -55 to +125 Unit V V mA mW * Package
SC-59 SOT-23 TO-92S TO-92 TO-18

Electrical Characteristics (Ta=25) Prameter Symbol Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittamce
Input capacitance (Common Source) Reverse transfer capacitance (Common Source)

Conditions VDS = 10V, VGS = 0V VGS= -30V, VDS = 0V IG = -100AVDS = 0V VDS = 10V, ID = 0.1A VDS= 10V VGS= 0V f = 1KHZ VDS= 10V VGS= 0V f = 1MHZ

min 0.3 -50 -0.4 1.2

typ

max 6.5 -1.0 -5.0

Unit mA nA V V mS pF pF

IDSS IGSS VGDS VGS(OFF) | Yfs | Ciss Crss

8.2 2.6

IDSS Rank Classification


Runk IDSS(mA) Marking Symbol R 0.3 to 0.75 035D O 0.6 to 1.4 035E Y 1.2 to 3.0 035F GR 2.6 to 6.5 035G

Xiaosheng Electronic & Telechnology CO. ,LTD.


Tel: 86-021-64859219 Fax: 86-021-64859219 www.on-ele.org Email:[email protected] Room 206 3rd building 195-16 Tianlin RD. Shanghai China

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